摘要:
Disclosed is a method for manufacturing a thin film transistor having high resolution and high pattern accuracy with high production efficiency. Particularly disclosed is a method for manufacturing a thin film transistor wherein there is prevented deterioration of semiconductor properties in a plating step for electrode formation. This method is characterized in that a source electrode or a drain electrode is formed by such a process wherein a protective film is formed on an organic semiconductor layer, then a plating catalyst pattern is formed thereon by supplying a liquid containing a plating catalyst, and then a plating agent is brought into contact with the pattern.
摘要:
A method for the formation of an organic semiconductor material film having improved mobility on a substrate, and a process for producing an organic thin film transistor which can develop high performance by utilizing the method. The production process of an organic thin film transistor utilizes the method for organic semiconductor material film formation, comprising coating an organic semiconductor material-containing liquid onto a surface of a substrate to form a semiconductor material thin film. The method for organic semiconductor material thin film formation is characterized in that, when the surface free energy of the surface of the substrate is γS=γSd+γSp+γSh (wherein γSd, γSp, and γSh each represent a non-polar component, a polar component, and a hydrogen bond component of the surface free energy of the solid surface based on the Young-Fowkes equation), and a surface free energy of a solvent in the aforesaid liquid is represented by γL=γLd+γLp+γLh (wherein γLd, γLp, and γLh each represent a non-polar component, a polar component, and a hydrogen bond component of the surface free energy of liquid based on the Young-Fowkes equation), γSh−γLh value is in the range of −5 to 20 (mN/m) and hydrogen bond component γSh is 0
摘要:
Disclosed are a process of manufacturing a thin-film transisitor sheet and a thin-sheet transistor sheet manufactured by the process, the process comprising providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side, an insulation layer capable of receiving a fluid electrode material, supplying the fluid electrode material to the insulation layer, the fluid electrode material being allowed to permeate the insulation layer, forming a gate electrode from the permeated fluid electrode material to be in contact with the gate busline, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on the gate insulating layer.
摘要:
An organic semiconductor thin film, comprising an organic semiconductor compound, wherein the organic semiconductor thin film is manufactured by a process of forming a film by using a solution or a dispersion at room temperature prepared by mixing the organic semiconductor compound and an organic solvent, and the half width of a diffraction peak having the maximum intensity is 0.4° or less in an X-ray diffraction spectrum of the film.
摘要:
A method of producing a crystalline organic semiconductor thin film including the steps of: (a) coating a solution of an organic semiconductor material in a solvent onto a substrate to form a liquid coating film; and (b) crystallizing the organic semiconductor material in the liquid coating film at an edge of the liquid coating film on the substrate so as to grow a crystalline of the organic semiconductor material.
摘要:
Disclosed are a process of manufacturing a thin-film transisitor sheet and a thin-sheet transistor sheet manufactured by the process, the process comprising providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side, an insulation layer capable of receiving a fluid electrode material, supplying the fluid electrode material to the insulation layer, the fluid electrode material being allowed to permeate the insulation layer, forming a gate electrode from the permeated fluid electrode material to be in contact with the gate busline, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on the gate insulating layer.