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17 条记录 (耗时 0.019 秒)

    Recording medium, ink-jet recording therewith, and process for production thereof
    2.
    发明授权
    Recording medium, ink-jet recording therewith, and process for production thereof 失效
    记录介质，喷墨记录及其制造方法

    公开(公告)号：US06670000B1

    公开(公告)日：2003-12-30

    申请号：US09025705

    申请日：1998-02-18

    申请人： Katsutoshi Misuda ,  Nobuyuki Hosoi ,  Kenji Shinjo ,  Ako Omata

    发明人： Katsutoshi Misuda ,  Nobuyuki Hosoi ,  Kenji Shinjo ,  Ako Omata

    IPC分类号： B41M500

    CPC分类号： B41M5/52 ,  B41M5/506 ,  B41M5/5254 ,  B41M5/5272 ,  B41M5/5281 ,  B41M7/00

    摘要： A recording medium comprises a porous outermost layer on a substrate, the porous outermost layer containing a particulate thermoplastic resin, and the particulate thermoplastic resin exhibiting a &Dgr;E value of not higher than 20 after light exposure. The difference of glass transition temperature of the particulate thermoplastic resin from minimum film-forming temperature thereof may be not less than 10° C., and the minimum film-forming temperature is not lower than 50° C. A process for producing the recording medium comprises forming a porous outermost layer by heat treatment at a temperature of not lower than the glass transition temperature of the particulate thermoplastic resin, but not higher than the minimum film-forming temperature thereof.

    摘要翻译： 记录介质包括在基底上的多孔最外层，多孔最外层含有颗粒状热塑性树脂，以及在曝光后其DeltaE值不高于20的颗粒状热塑性树脂。 颗粒状热塑性树脂的玻璃化转变温度与其成膜温度的最小值可以不低于10℃，最低成膜温度不低于50℃，用于制备记录介质的CA工艺包括成型 通过在不低于粒状热塑性树脂的玻璃化转变温度的温度下进行热处理而不高于其最低成膜温度的多孔最外层。

    Semiconductor light-emitting device
    7.
    发明授权
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号：US06707071B2

    公开(公告)日：2004-03-16

    申请号：US10096508

    申请日：2002-03-13

    申请人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

    发明人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

    IPC分类号： H01L3300

    CPC分类号： H01S5/2231 ,  H01S5/0202 ,  H01S5/0658 ,  H01S5/2272 ,  H01S5/3213

    摘要： In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

    摘要翻译： 在包括衬底的半导体发光器件中，包括形成在衬底上的有源层的第一化合物半导体层，形成在第一化合物半导体层上的脊状的第二化合物半导体层和形成在第一化合物半导体层上的保护膜 化合物半导体层在第二化合物半导体层的两侧，所公开的半导体发光器件具有形成在保护膜外部的第一化合物半导体层上方的电流阻挡层。 这种半导体发光器件由于容易地被切割和组装而具有高的产量，具有适当的挤压电流，并且当在结合型组装时具有高输出和更长的寿命。

    Semiconductor light-emitting devices
    8.
    发明授权
    Semiconductor light-emitting devices 失效
    半导体发光器件

    公开(公告)号：US5811839A

    公开(公告)日：1998-09-22

    申请号：US521980

    申请日：1995-08-31

    申请人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

    发明人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

    IPC分类号： H01L33/30 ,  H01S5/32 ,  H01S5/323 ,  H01L33/00 ,  H01S3/19

    CPC分类号： H01L33/30 ,  H01S5/32325 ,  H01S5/3211

    摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.

    摘要翻译： 本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物， 高达0.5μm的有源层，位于第二覆层旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型 AlGaInP化合物，并且具有至多0.5μm的厚度，以及位于第三覆盖层旁边并包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电类型的光提取层 型AlGaP或GaP，并且具有1μm至100μm的厚度。

    Semiconductor light-emitting device and manufacturing method for the same
    9.
    发明授权
    Semiconductor light-emitting device and manufacturing method for the same 失效
    半导体发光器件及其制造方法

    公开(公告)号：US06387721B1

    公开(公告)日：2002-05-14

    申请号：US09404376

    申请日：1999-09-24

    申请人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

    发明人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

    IPC分类号： H01L2100

    CPC分类号： H01S5/2231 ,  H01S5/0202 ,  H01S5/0658 ,  H01S5/2272 ,  H01S5/3213

    摘要： In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

    摘要翻译： 在包括衬底的半导体发光器件中，包括形成在衬底上的有源层的第一化合物半导体层，形成在第一化合物半导体层上的脊状的第二化合物半导体层和形成在第一化合物半导体层上的保护膜 化合物半导体层在第二化合物半导体层的两侧，所公开的半导体发光器件具有形成在保护膜外部的第一化合物半导体层上方的电流阻挡层。 这种半导体发光器件由于容易地被切割和组装而具有高的产量，具有适当的挤压电流，并且当在结合型组装时具有高输出和更长的寿命。

    Process for producing magnetic recording medium
    10.
    发明授权
    Process for producing magnetic recording medium 失效
    磁记录介质的制造方法

    公开(公告)号：US4999217A

    公开(公告)日：1991-03-12

    申请号：US306210

    申请日：1989-02-03

    申请人： Yukio Watanabe ,  Shigeru Hashimoto ,  Nobuyuki Hosoi

    发明人： Yukio Watanabe ,  Shigeru Hashimoto ,  Nobuyuki Hosoi

    IPC分类号： G11B5/845

    CPC分类号： G11B5/845 ,  Y10S428/90

    摘要： A process for producing a magnetic recording medium includes coating a nonmagnetic substrate with a magnetic paint and applying a rotating magnetic field for orientation to the raw fabric with magnetic paint in a yet unsolidified state on the substrate, in which a magnetic field is applied to the above raw fabric so that the magnetic lines of force may pass from the back face to the front surface or from the front surface to the back surface of the raw fabric before application of the rotating magnetic field for orientation, thereby effecting preliminary orientation.

    摘要翻译： 一种磁记录介质的制造方法，其特征在于，使用磁性涂料对非磁性基板进行涂布，并在所述基板上涂敷用于取向的磁性涂料的磁性涂料，向所述原料织物施加旋转磁场，所述磁性涂料在未固化状态下， 使得在施加用于定向的旋转磁场之前，磁力线可能从背面向前表面或从原料的前表面延伸到后表面，从而实现初步取向。