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    Semiconductor light-emitting devices
    1.
    发明授权
    Semiconductor light-emitting devices 失效
    半导体发光器件

    公开(公告)号：US5811839A

    公开(公告)日：1998-09-22

    申请号：US521980

    申请日：1995-08-31

    申请人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

    发明人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

    IPC分类号： H01L33/30 ,  H01S5/32 ,  H01S5/323 ,  H01L33/00 ,  H01S3/19

    CPC分类号： H01L33/30 ,  H01S5/32325 ,  H01S5/3211

    摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.

    摘要翻译： 本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物， 高达0.5μm的有源层，位于第二覆层旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型 AlGaInP化合物，并且具有至多0.5μm的厚度，以及位于第三覆盖层旁边并包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电类型的光提取层 型AlGaP或GaP，并且具有1μm至100μm的厚度。

    Semiconductor light-emitting devices
    2.
    发明授权
    Semiconductor light-emitting devices 失效
    半导体发光器件

    公开(公告)号：US06278137B1

    公开(公告)日：2001-08-21

    申请号：US09035333

    申请日：1998-03-05

    申请人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

    发明人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

    IPC分类号： H01L3300

    CPC分类号： H01L33/30 ,  H01S5/3211 ,  H01S5/32325

    摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.

    摘要翻译： 本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物， 高达0.5μm的有源层，位于第二覆盖层的旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型的AlGaInP 并且具有高达0.5μm的厚度，以及位于第三覆盖层旁边并且包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电型AlGaP的光提取层 或GaP，并且具有1μm至100μm的厚度。

    Compound semiconductor and its fabrication
    5.
    发明授权
    Compound semiconductor and its fabrication 失效
    复合半导体及其制造

    公开(公告)号：US5827365A

    公开(公告)日：1998-10-27

    申请号：US376443

    申请日：1995-01-23

    申请人： Kenji Shimoyama ,  Hideki Gotoh

    发明人： Kenji Shimoyama ,  Hideki Gotoh

    IPC分类号： H01L21/20 ,  H01L21/205 ,  C30B25/14

    CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639

    摘要： A vapor phase growth process for the fabrication of a thin film form of compound semiconductor of elements of Groups III-V, using a halogen element-free hydride and a halogen element-free organic metal as the source materials for growth, is characterized in that a halide gas and/or a halogen gas that are free from the mother elements of the compound to be grown are added to the reaction atmosphere while the compound is growing. A trace amount(s) of the halide and/or halogen gas(es) that are free from the mother elements of the compound to be grown, such as HCl, is added to the reaction atmosphere while the compound is growing, thereby making it possible to flatten the heterojunction interface or effect the growth of high-quality crystals without deposition of polycrystals on a mask over a wide range.

    摘要翻译： 用于制造III-V族元素的薄膜形式的使用无卤元素氢化物和无卤元素的有机金属作为生长源的气相生长方法的特征在于： 在化合物生长的同时，在反应气氛中加入不含待生长化合物的母体元素的卤化物气体和/或卤素气体。 在化合物生长的同时，向反应气氛中加入痕量的卤化物和/或卤素气体，所述卤化物和/或卤素气体不含待生长的化合物的母体元素，例如HCl，从而使其成为 可能使异质结界面变平或影响高质量晶体的生长，而不会在宽范围的掩模上沉积多晶体。

    Method of making semiconductor laser devices
    6.
    发明授权
    Method of making semiconductor laser devices 失效
    制造半导体激光器件的方法

    公开(公告)号：US5145807A

    公开(公告)日：1992-09-08

    申请号：US545794

    申请日：1990-06-29

    申请人： Kenji Shimoyama ,  Hideki Gotoh

    发明人： Kenji Shimoyama ,  Hideki Gotoh

    IPC分类号： H01S5/042 ,  H01S5/22 ,  H01S5/227 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/34313 ,  H01S5/0424 ,  H01S5/2275 ,  H01S5/3432 ,  Y10S148/095

    摘要： Carrier injection layers are formed on an Al.sub.x Ga.sub.1-x As clad layer of high resistance by embedding and re-growth with the use of crystal growth processes such as MO-VPE or MO-MBE where material supply sources are all provided by gas sources, whereby it is not required to mesa-etch embedding regions to a depth reaching a substrate. The formation of any separate blocking layer is dispensed with, any possible influence of the substrate is elminated, and the time constant is decreased by decreasing the inter-electrode capacity.

    摘要翻译： 通过使用诸如MO-VPE或MO-MBE的晶体生长工艺的嵌入和再生长，在气体源全部提供材料供应源的情况下，在高电阻的Al x Ga 1-x As包层上形成载流子注入层，由此 不需要将嵌入区域的台面蚀刻到到达衬底的深度。 省略任何单独的阻挡层的形成，衬底的任何可能的影响被消除，并且通过降低电极间电容来降低时间常数。

    Semiconductor device and method for manufacturing the same
    7.
    发明授权
    Semiconductor device and method for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US06744066B2

    公开(公告)日：2004-06-01

    申请号：US09785428

    申请日：2001-02-20

    申请人： Kenji Shimoyama ,  Kazumasa Kiyomi ,  Hideki Gotoh ,  Satoru Nagao

    发明人： Kenji Shimoyama ,  Kazumasa Kiyomi ,  Hideki Gotoh ,  Satoru Nagao

    IPC分类号： H01L2906

    CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/24 ,  H01S5/2275 ,  H01S2304/04

    摘要： The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.

    摘要翻译： 根据本发明的半导体器件包括在半导体衬底上或在半导体衬底上生长的外延生长层上形成具有V形横截面的V形沟槽，并且仅在所述V的底部提供有源层 -槽。 根据本发明的制造半导体器件的方法包括以下步骤：在半导体衬底或其上生长的外延生长层的<011>方向上形成条状蚀刻保护膜，使用氯化氢作为蚀刻进行气体蚀刻 在半导体衬底上或在半导体衬底上生长的外延生长层上的气体形成V形槽，并在所述V形槽的底部形成有源层。

    Laser diode and process for producing the same
    8.
    发明授权
    Laser diode and process for producing the same 失效
    激光二极管及其制造方法

    公开(公告)号：US5608751A

    公开(公告)日：1997-03-04

    申请号：US209963

    申请日：1994-03-14

    申请人： Kenji Shimoyama ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Gotoh

    发明人： Kenji Shimoyama ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Gotoh

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/0211 ,  H01S5/2207 ,  H01S5/221 ,  H01S5/222 ,  H01S5/32325

    摘要： The disclosure describes a laser diode comprising a Group III-V compound single-crystal substrate of first conduction type; a first cladding layer of first conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said single-crystal substrate; an active layer composed of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq.x.ltoreq.0.5 and 0.3.ltoreq.y.ltoreq.0.75) and formed on said first cladding layer; a second cladding layer of second conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said active layer and having a ridge; and a current blocking layer composed of Al.sub.u Ga.sub.1-u As.sub.v P.sub.1-v, (0.ltoreq.u.ltoreq.1 and 0.ltoreq.v.ltoreq.1) and so formed as to contact the lateral side of the ridge of said second cladding layer,(1) each refractive index of the first and second cladding layers being smaller than that of the active layer and (2) the refractive index of the current blocking layer being smaller than that of the second cladding layer.

    摘要翻译： 本公开描述了一种包括第一导电类型的III-V族化合物单晶衬底的激光二极管; 由（AlmGa1-m）nIn1-nP（0.3≤n≤1,0.3≤n≤0.75）组成的第一导电类型的第一包层，形成在所述单晶衬底上; 形成在所述第一包层上的由（Al x Ga 1-x）y In 1-y P（0≤x≤0.5,0.3≤y≤0.75）组成的有源层; 由（AlmGa1-m）nIn1-nP（0.3≤n≤1,0.3≤n≤0.75）构成并形成在所述有源层上并具有脊的第二导电类型的第二包层; 和由AluGa1-uAsvP1-v组成的电流阻挡层，其形成为接触所述第二包层的脊的横向侧面 层，（1）第一和第二包覆层的每个折射率小于有源层的折射率，和（2）电流阻挡层的折射率小于第二覆层的折射率。

    Fabrication of semiconductor laser elements
    9.
    发明授权
    Fabrication of semiconductor laser elements 失效
    制造半导体激光元件

    公开(公告)号：US5376581A

    公开(公告)日：1994-12-27

    申请号：US118792

    申请日：1993-09-10

    申请人： Kenji Shimoyama ,  Yuichi Inoue ,  Hideki Gotoh

    发明人： Kenji Shimoyama ,  Yuichi Inoue ,  Hideki Gotoh

    IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/40 ,  H01L21/20

    CPC分类号： H01S5/2231 ,  H01S5/2272 ,  H01S5/4031 ,  Y10S148/095

    摘要： In a process for fabricating a semiconductor laser by forming a double-heterostructure made up of a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate at the first growth step, forming protecting films for selective growth on both sides of a striped region for current injection, without etching the second cladding layer, and growing a third cladding layer and a contact layer for current injection at a second growth step, the second cladding layer formed at the first growth step is grown to the thickness required for achieving laser characteristics.

    摘要翻译： 在通过在第一生长步骤中在半导体衬底上形成由第一包覆层，有源层和第二包覆层构成的双异质结构来制造半导体激光的工艺中，在第二生长步骤的两侧形成用于选择性生长的保护膜 用于电流注入的条纹区域，而不蚀刻第二包层，并且在第二生长步骤生长用于电流注入的第三包层和接触层，在第一生长步骤形成的第二包层生长至所需的厚度 实现激光特性。