公开(公告)号：US5972780A

公开(公告)日：1999-10-26

申请号：US911845

申请日：1997-08-15

申请人： Katsuyuki Machida ,  Hakaru Kyuragi ,  Hideo Akiya ,  Kazuo Imai

发明人： Katsuyuki Machida ,  Hakaru Kyuragi ,  Hideo Akiya ,  Kazuo Imai

IPC分类号： B29C43/56 ,  B32B37/18 ,  H05K3/20 ,  H01L21/30 ,  H01L21/46

CPC分类号： B29C43/56 ,  B32B37/00 ,  H05K3/20 ,  B29C2043/561 ,  B29C43/32 ,  B32B2309/68 ,  B32B37/025 ,  B32B37/18 ,  Y10T156/12 ,  Y10T156/1343 ,  Y10T156/1705

摘要： A thin film forming apparatus includes a specimen holder on which a substrate for thin film formation is placed, a transfer plate opposing the specimen holder, on which a sheet film having a thin film formed on a surface is placed, a thin film forming chamber comprising the specimen holder and the transfer plate, a pressure unit for moving at least one of the specimen holder and the transfer plate and pressing the specimen holder against the transfer plate for a predetermined time while the substrate and the thin film formed on the sheet film are in contact with each other, a heating unit for heating the substrate at a predetermined temperature, and an exhausting unit for vacuum-exhausting the thin film forming chamber.

摘要翻译： 一种薄膜形成装置，包括：试样保持体，配置有用于形成薄膜的基板;与该试样支架相对的转印板，在其上放置表面形成有薄膜的薄膜，薄膜形成室， 样品架和转印板，用于移动样本保持架和转印板中的至少一个的压力单元，并且在基板和形成在薄膜上的薄膜的同时将样本架抵靠转印板按压预定时间 彼此接触，用于在预定温度下加热基板的加热单元和用于真空排出薄膜形成室的排气单元。

公开(公告)号：US6092578A

公开(公告)日：2000-07-25

申请号：US026119

申请日：1998-02-19

申请人： Katsuyuki Machida ,  Hakaru Kyuragi ,  Hideo Akiya ,  Kazuo Imai

发明人： Katsuyuki Machida ,  Hakaru Kyuragi ,  Hideo Akiya ,  Kazuo Imai

IPC分类号： B29C43/56 ,  B32B37/18 ,  H05K3/20 ,  B32B35/00 ,  H01L21/30

CPC分类号： B29C43/56 ,  B32B37/00 ,  H05K3/20 ,  B29C2043/561 ,  B29C43/32 ,  B32B2309/68 ,  B32B37/025 ,  B32B37/18 ,  Y10T156/12 ,  Y10T156/1343 ,  Y10T156/1705

摘要： A thin film forming apparatus includes a specimen holder on which a substrate for thin film formation is placed, a transfer plate opposing the specimen holder, on which a sheet film having a thin film formed on a surface is placed, a thin film forming chamber comprising the specimen holder and the transfer plate, a pressure unit for moving at least one of the specimen holder and the transfer plate and pressing the specimen holder against the transfer plate for a predetermined time while the substrate and the thin film formed on the sheet film are in contact with each other, a heating unit for heating the substrate at a predetermined temperature, and an exhausting unit for vacuum-exhausting the thin film forming chamber.

摘要翻译： 一种薄膜形成装置，包括：试样保持体，配置有用于形成薄膜的基板;与该试样支架相对的转印板，在其上放置表面形成有薄膜的薄膜，薄膜形成室， 样品架和转印板，用于移动样本保持架和转印板中的至少一个的压力单元，并且在基板和形成在薄膜上的薄膜的同时将样本架抵靠转印板按压预定时间 彼此接触，用于在预定温度下加热基板的加热单元和用于真空排出薄膜形成室的排气单元。

公开(公告)号：US06232216B1

公开(公告)日：2001-05-15

申请号：US08835992

申请日：1997-04-11

申请人： Katsuyuki Machida ,  Hakaru Kyuragi ,  Hideo Akiya

发明人： Katsuyuki Machida ,  Hakaru Kyuragi ,  Hideo Akiya

IPC分类号： C23C16511

CPC分类号： H01L21/02126 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76834

摘要： In this thin film forming method, a first thin film is formed on a semiconductor substrate having the step height by chemical vapor deposition using a high density plasma. A base member on which a second thin film is formed is placed on the semiconductor substrate such that the first and second thin films oppose each other. The semiconductor substrate is heated to a first temperature to form the second thin film on the first thin film. The base member is peeled off from the second thin film. The second thin film formed on the first thin film is heated to a second temperature higher than the first temperature.

摘要翻译： 在该薄膜形成方法中，通过使用高密度等离子体的化学气相沉积在具有台阶高度的半导体基板上形成第一薄膜。 其上形成有第二薄膜的基底构件被放置在半导体衬底上，使得第一和第二薄膜彼此相对。 半导体衬底被加热到第一温度以在第一薄膜上形成第二薄膜。 基底构件从第二薄膜剥离。 形成在第一薄膜上的第二薄膜被加热到高于第一温度的第二温度。

公开(公告)号：US4599137A

公开(公告)日：1986-07-08

申请号：US721305

申请日：1985-04-09

申请人： Hideo Akiya

发明人： Hideo Akiya

IPC分类号： G03F7/095 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/30 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： G03F7/095 ,  H01L21/0271 ,  H01L21/0272 ,  H01L21/31138

摘要： A method of forming a resist micropattern in the manufacture of semiconductor devices. This method comprises first forming a multilayered resist films on a substrate, the uppermost film of which is selected to be a highly sensitive resist film 0.05 to 1.0 .mu.m in thickness, forming an uppermost resist pattern including a desired patterned groove, forming a mask film only in the groove, and dry etching the resist excluding that beneath the mask film in the groove thereby forming a resist micropattern.

摘要翻译： 在半导体器件的制造中形成抗蚀剂微图案的方法。 该方法包括首先在基板上形成多层抗蚀剂膜，其最上面的膜选择为厚度为0.05至1.0μm的高灵敏度抗蚀剂膜，形成包括所需图案化凹槽的最上面的抗蚀剂图案，形成掩模膜 仅在凹槽中，并且干蚀刻除了凹槽中的掩模膜下面的抗蚀剂，从而形成抗蚀剂微图案。