公开(公告)号：US20070032047A1

公开(公告)日：2007-02-08

申请号：US11496436

申请日：2006-08-01

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

IPC分类号： C23C16/00 ,  G06F19/00 ,  H01L21/20

CPC分类号： C23C16/4412 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185

摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.

摘要翻译： 通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体 由氮化，氮氧化和氧化气体组成。 该方法交替地包括第一至第四步骤。 第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。 通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。 第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

公开(公告)号：US07758920B2

公开(公告)日：2010-07-20

申请号：US11496436

申请日：2006-08-01

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： C23C16/4412 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185

摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.

摘要翻译： 通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体 由氮化，氮氧化和氧化气体组成。 该方法交替地包括第一至第四步骤。 第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。 通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。 第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

公开(公告)号：US07825039B2

公开(公告)日：2010-11-02

申请号：US12411123

申请日：2009-03-25

申请人： Toshiki Takahashi ,  Kohei Fukushima ,  Koichi Orito ,  Jun Sato

发明人： Toshiki Takahashi ,  Kohei Fukushima ,  Koichi Orito ,  Jun Sato

IPC分类号： H01L21/471

CPC分类号： C23C16/45578 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/45574

摘要： A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.

摘要翻译： 用于半导体工艺的垂直等离子体处理装置包括处理容器，其具有被配置为在垂直方向上间隔地容纳多个目标基板的处理区域和处理区域外的边缘空间。 在处理目标基板时，控制部分同时执行从处理气体供应电路向处理场供应处理气体，并将阻塞气体从封闭气体供应回路供给到边际空间，以阻止处理气体流入 边际空间。

公开(公告)号：US20070234961A1

公开(公告)日：2007-10-11

申请号：US11696501

申请日：2007-04-04

申请人： Toshiki Takahashi ,  Kohei Fukushima ,  Koichi Orito ,  Jun Sato

发明人： Toshiki Takahashi ,  Kohei Fukushima ,  Koichi Orito ,  Jun Sato

IPC分类号： C23C16/00

CPC分类号： C23C16/45578 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/45574

摘要： A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.

摘要翻译： 用于半导体工艺的垂直等离子体处理装置包括处理容器，其具有被配置为在垂直方向上间隔地容纳多个目标基板的处理区域和处理区域外的边缘空间。 在处理目标基板时，控制部分同时执行从处理气体供应电路向处理场供应处理气体，并将阻塞气体从封闭气体供应回路供给到边际空间，以阻止处理气体流入 边际空间。

公开(公告)号：US20090181548A1

公开(公告)日：2009-07-16

申请号：US12411123

申请日：2009-03-25

申请人： Toshiki Takahashi ,  Kohei Fukushima ,  Koichi Orito ,  Jun Sato

发明人： Toshiki Takahashi ,  Kohei Fukushima ,  Koichi Orito ,  Jun Sato

IPC分类号： H01L21/31

CPC分类号： C23C16/45578 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/45574

摘要： A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.

摘要翻译： 用于半导体工艺的垂直等离子体处理装置包括处理容器，其具有被配置为在垂直方向上间隔地容纳多个目标基板的处理区域和处理区域外的边缘空间。 在处理目标基板时，控制部分同时执行从处理气体供应电路向处理场供应处理气体，并将阻塞气体从封闭气体供应回路供给到边际空间，以阻止处理气体流入 边际空间。

公开(公告)号：US08608902B2

公开(公告)日：2013-12-17

申请号：US12686060

申请日：2010-01-12

申请人： Kohei Fukushima ,  Toshiki Takahashi ,  Hiroyuki Matsuura ,  Yutaka Motoyama ,  Kazuya Yamamoto

发明人： Kohei Fukushima ,  Toshiki Takahashi ,  Hiroyuki Matsuura ,  Yutaka Motoyama ,  Kazuya Yamamoto

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： C23C16/345 ,  C23C16/4401 ,  C23C16/452 ,  H01J37/321 ,  H01J37/3244

摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field and confining a plasma generation area airtightly communicating with the process field, an ICP electrode disposed outside the plasma generation box and extending in a longitudinal direction of the plasma generation box, and an RF power supply connected to the ICP electrode. The ICP electrode includes a separated portion separated from a wall surface of the plasma generation box by a predetermined distance.

摘要翻译： 一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。 激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，并限制与过程场气密地通信的等离子体产生区域; ICP电极，设置在等离子体生成箱的外部并且沿纵向延伸 等离子体生成箱的方向，以及与ICP电极连接的RF电源。 ICP电极包括与等离子体发生箱的壁面隔开预定距离的分离部分。

公开(公告)号：US20090056877A1

公开(公告)日：2009-03-05

申请号：US12230468

申请日：2008-08-29

申请人： Hiroyuki Matsuura ,  Toshiki Takahashi ,  Kohei Fukushima

发明人： Hiroyuki Matsuura ,  Toshiki Takahashi ,  Kohei Fukushima

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01J37/32532 ,  C23C16/345 ,  C23C16/452 ,  H01J37/321

摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

摘要翻译： 一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。 激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，以形成与过程场气密地连通的等离子体产生区域，提供给等离子体生成箱的ICP电极和RF功率 电源连接到电极。

公开(公告)号：US08336490B2

公开(公告)日：2012-12-25

申请号：US13339149

申请日：2011-12-28

申请人： Hiroyuki Matsuura ,  Toshiki Takahashi ,  Kohei Fukushima

发明人： Hiroyuki Matsuura ,  Toshiki Takahashi ,  Kohei Fukushima

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

CPC分类号： H01J37/32532 ,  C23C16/345 ,  C23C16/452 ,  H01J37/321

摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

摘要翻译： 一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。 激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，以形成与过程场气密地连通的等离子体产生区域，提供给等离子体生成箱的ICP电极和RF功率 电源连接到电极。

公开(公告)号：US20120103525A1

公开(公告)日：2012-05-03

申请号：US13339149

申请日：2011-12-28

申请人： Hiroyuki MATSUURA ,  Toshiki Takahashi ,  Kohei Fukushima

发明人： Hiroyuki MATSUURA ,  Toshiki Takahashi ,  Kohei Fukushima

IPC分类号： C23F1/08

CPC分类号： H01J37/32532 ,  C23C16/345 ,  C23C16/452 ,  H01J37/321

摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

摘要翻译： 一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。 激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，以形成与过程场气密地连通的等离子体产生区域，提供给等离子体生成箱的ICP电极和RF功率 电源连接到电极。

公开(公告)号：US07156923B2

公开(公告)日：2007-01-02

申请号：US10986282

申请日：2004-11-12

申请人： Hitoshi Kato ,  Kohei Fukushima ,  Atsushi Endo ,  Tatsuo Nishita ,  Takeshi Kumagai

发明人： Hitoshi Kato ,  Kohei Fukushima ,  Atsushi Endo ,  Tatsuo Nishita ,  Takeshi Kumagai

IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/52 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02271 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/0217 ,  H01L21/3185 ,  Y10S438/905

摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).

摘要翻译： 热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。 反应容器2在500-900℃范围内的温度下被加热，排气管（16）在分解和清洁排气管16之前被加热到100℃。 氨通过工艺气体供给管（13）供给到反应容器（2）中，氨从反应容器（2）排出到排气管（16）中。