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公开(公告)号：US08608902B2
公开(公告)日：2013-12-17
申请号：US12686060
申请日：2010-01-12
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： C23C16/345 , C23C16/4401 , C23C16/452 , H01J37/321 , H01J37/3244
摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field and confining a plasma generation area airtightly communicating with the process field, an ICP electrode disposed outside the plasma generation box and extending in a longitudinal direction of the plasma generation box, and an RF power supply connected to the ICP electrode. The ICP electrode includes a separated portion separated from a wall surface of the plasma generation box by a predetermined distance.
摘要翻译： 一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。 激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，并限制与过程场气密地通信的等离子体产生区域; ICP电极，设置在等离子体生成箱的外部并且沿纵向延伸 等离子体生成箱的方向，以及与ICP电极连接的RF电源。 ICP电极包括与等离子体发生箱的壁面隔开预定距离的分离部分。
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公开(公告)号：US20100186898A1
公开(公告)日：2010-07-29
申请号：US12686060
申请日：2010-01-12
IPC分类号： C23F1/08 , C23C16/505
CPC分类号： C23C16/345 , C23C16/4401 , C23C16/452 , H01J37/321 , H01J37/3244
摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field and confining a plasma generation area airtightly communicating with the process field, an ICP electrode disposed outside the plasma generation box and extending in a longitudinal direction of the plasma generation box, and an RF power supply connected to the ICP electrode. The ICP electrode includes a separated portion separated from a wall surface of the plasma generation box by a predetermined distance.
摘要翻译： 一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。 激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，并限制与过程场气密地通信的等离子体产生区域; ICP电极，设置在等离子体生成箱的外部并且沿纵向延伸 等离子体生成箱的方向，以及与ICP电极连接的RF电源。 ICP电极包括与等离子体发生箱的壁面隔开预定距离的分离部分。
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公开(公告)号：US08336490B2
公开(公告)日：2012-12-25
申请号：US13339149
申请日：2011-12-28
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32532 , C23C16/345 , C23C16/452 , H01J37/321
摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.
摘要翻译： 一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。 激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，以形成与过程场气密地连通的等离子体产生区域，提供给等离子体生成箱的ICP电极和RF功率 电源连接到电极。
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公开(公告)号：US20090056877A1
公开(公告)日：2009-03-05
申请号：US12230468
申请日：2008-08-29
CPC分类号： H01J37/32532 , C23C16/345 , C23C16/452 , H01J37/321
摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.
摘要翻译： 一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。 激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，以形成与过程场气密地连通的等离子体产生区域，提供给等离子体生成箱的ICP电极和RF功率 电源连接到电极。
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公开(公告)号：US08267041B2
公开(公告)日：2012-09-18
申请号：US11661135
申请日：2005-08-30
IPC分类号： C23C16/50 , C23C16/503 , C23C16/505 , C23C16/507 , C23C16/509 , C23C16/52 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32183 , H01J37/32091
摘要： A plasma treating apparatus adapted to provide a predetermined plasma treatment to an object W to be treated comprises a processing chamber 12 configured to be capable of being vacuumed, an object holding means 20 adapted to hold the object to be treated, a high frequency power source 58 adapted to generate high frequency voltage, a plasma gas supplying means 38 adapted to supply a plasma generating gas to be treated to generate plasma to the processing chamber, a pair of plasma electrodes 56, 56B connected to the output side of the high frequency power source via wirings 60 to generate plasma in the processing chamber, the pair of plasma electrodes being brought into an excited electrode state. In addition, a high frequency matching means 72 is provided in the middle of the wirings. In this case, each of the plasma electrodes 56A, 56B is not grounded. Thus, the plasma density can be increased, and the efficiency of generating plasma can be enhanced.
摘要翻译： 一种等离子体处理装置，适用于对被处理物体W进行预定的等离子体处理，包括能够被抽真空的处理室12，适于保持待处理物体的物体保持装置20，高频电源 适于产生高频电压的等离子体气体供给装置38，其适于将待处理的等离子体产生气体提供给处理室产生等离子体;一对等离子体电极56,56B，其连接到高频功率的输出侧 源极通过布线60在处理室中产生等离子体，一对等离子体电极进入激发电极状态。 此外，在布线的中间设有高频匹配装置72。 在这种情况下，每个等离子体电极56A，56B都不接地。 因此，可以提高等离子体密度，并且可以提高产生等离子体的效率。
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公开(公告)号：US20090078201A1
公开(公告)日：2009-03-26
申请号：US12277344
申请日：2008-11-25
IPC分类号： C23C16/505
CPC分类号： C23C16/45578 , C23C16/452 , C23C16/45565 , C23C16/45574
摘要： A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.
摘要翻译： 用于半导体工艺的垂直等离子体处理装置包括由具有绝缘内表面并与处理容器一体化的壳体限定的气密辅助室。 辅助室包括在垂直方向上在对应于多个目标基板的长度上延伸的等离子体产生区域。 具有绝缘表面的隔板位于处理场和等离子体产生之间。 隔板包括沿垂直方向设置在与多个目标基板相对应的长度上的气体通道。 在通过等离子体产生区域时排出处理气体，然后通过气体通道供给到处理区域。
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公开(公告)号：US20080093024A1
公开(公告)日：2008-04-24
申请号：US11661135
申请日：2005-08-30
IPC分类号： C23F1/08 , C23C16/513
CPC分类号： H01J37/32183 , H01J37/32091
摘要： A plasma treating apparatus adapted to provide a predetermined plasma treatment to an object W to be treated comprises a processing chamber 12 configured to be capable of being vacuumed, an object holding means 20 adapted to hold the object to be treated, a high frequency power source 58 adapted to generate high frequency voltage, a plasma gas supplying means 38 adapted to supply a plasma generating gas to be treated to generate plasma to the processing chamber, a pair of plasma electrodes 56, 56B connected to the output side of the high frequency power source via wirings 60 to generate plasma in the processing chamber, the pair of plasma electrodes being brought into an excited electrode state. In addition, a high frequency matching means 72 is provided in the middle of the wirings. In this case, each of the plasma electrodes 56A, 56B is not grounded. Thus, the plasma density can be increased, and the efficiency of generating plasma can be enhanced.
摘要翻译： 一种等离子体处理装置，适用于对被处理物体W进行预定的等离子体处理，包括能够被抽真空的处理室12，适于保持待处理物体的物体保持装置20，高频电源 适于产生高频电压的等离子体气体供给装置38，其适于将待处理的等离子体产生气体提供给处理室产生等离子体;一对连接到高频输出侧的等离子体电极56,56B 电源通过布线60在处理室中产生等离子体，一对等离子体电极处于激发电极状态。 此外，在布线的中间设有高频匹配装置72。 在这种情况下，每个等离子体电极56A，56B都不接地。 因此，可以提高等离子体密度，并且可以提高产生等离子体的效率。
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公开(公告)号：US20070240644A1
公开(公告)日：2007-10-18
申请号：US11689686
申请日：2007-03-22
IPC分类号： C23C16/00
CPC分类号： C23C16/45578 , C23C16/452 , C23C16/45565 , C23C16/45574
摘要： A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.
摘要翻译： 用于半导体工艺的垂直等离子体处理装置包括由具有绝缘内表面并与处理容器一体化的壳体限定的气密辅助室。 辅助室包括在垂直方向上在对应于多个目标基板的长度上延伸的等离子体产生区域。 具有绝缘表面的隔板位于处理场和等离子体产生之间。 隔板包括沿垂直方向设置在与多个目标基板相对应的长度上的气体通道。 在通过等离子体产生区域时排出处理气体，然后通过气体通道供给到处理区域。
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公开(公告)号：US08394200B2
公开(公告)日：2013-03-12
申请号：US12277344
申请日：2008-11-25
IPC分类号： C23C16/505
CPC分类号： C23C16/45578 , C23C16/452 , C23C16/45565 , C23C16/45574
摘要： A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.
摘要翻译： 用于半导体工艺的垂直等离子体处理装置包括由具有绝缘内表面并与处理容器一体化的壳体限定的气密辅助室。 辅助室包括在垂直方向上在对应于多个目标基板的长度上延伸的等离子体产生区域。 具有绝缘表面的隔板位于处理场和等离子体产生之间。 隔板包括沿垂直方向设置在与多个目标基板相对应的长度上的气体通道。 在通过等离子体产生区域时排出处理气体，然后通过气体通道供给到处理区域。
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公开(公告)号：US20090184109A1
公开(公告)日：2009-07-23
申请号：US12320105
申请日：2009-01-16
CPC分类号： H01L21/67109
摘要： A processing apparatus subjects an object to be processed W to a heat process. The processing apparatus comprises: a processing vessel 22 capable of containing a object to be processed W; a coil part for induction heating 104 that is disposed outside the processing vessel 22; a radiofrequency power source 110 configured to apply a radiofrequency power to the coil part for induction heating 104; a gas supply part 90 configured to introduce a gas into the processing vessel 22; a holding part 24 configured to hold the object to be processed W in the processing vessel 22; and a induction heating element N that is inductively heated by a radiofrequency from the coil part for induction heating 104 so as to heat the object to be processed W. The induction heating element N is provided with a cut groove for controlling a flow of an eddy current generated on the induction heating element.
摘要翻译： 处理装置使待处理对象W对待加热处理。 处理装置包括：能够容纳待加工物体W的处理容器22; 设置在处理容器22外部的用于感应加热的线圈部分104; 被配置为向感应加热用线圈部件104施加射频电力的射频电源110; 配置为将气体引入处理容器22的气体供给部90; 被配置为将处理容器22中的待处理物体W保持的保持部24; 以及感应加热元件N，该感应加热元件N通过射频从感应加热线圈部分104感应加热，以加热待加工物体W.感应加热元件N设置有用于控制涡流的切割槽 在感应加热元件上产生的电流。
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