公开(公告)号：US4352834A

公开(公告)日：1982-10-05

申请号：US213016

申请日：1980-12-04

Applicant: Kazuhisa Taketoshi ,  Chihaya Ogusu

Inventor： Kazuhisa Taketoshi ,  Chihaya Ogusu

IPC: H01L21/365 ,  C23C14/00 ,  H01L21/203 ,  H01L21/363 ,  H01L31/00 ,  H01L31/18

CPC classification number: C23C14/0021 ,  H01L21/02422 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/0248 ,  H01L21/02631 ,  H01L31/18

Abstract: In a vacuum container an active (or atomic state) gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1.times.10.sup.-3 Torr or less is produced. In an atmosphere of the active (or atomic state) gas, a film, which consists of a compound presenting semiconductor characteristics (CdS, CdSe, ZnSe, ZnS, ZnTe, CdTe) or a solid solution thereof and presents a desired polarity property such as p, n, p.sup.+ or n.sup.+, is vapor-deposited on a substrate at a desired position with a desired thickness, so as to fabricate an evaporation device which is preferable, for example, as a photoconductive target for a television camera tube.

Abstract translation: 在真空容器中，产生由活性氢，活性氧和活性氮中的任一种组成的分压为1×10 -3 Torr或更小的活性（或原子状态）气体。 在活性（或原子状态）气体的气氛中，由具有半导体特性的化合物（CdS，CdSe，ZnSe，ZnS，ZnTe，CdTe）或其固溶体组成的膜，并且具有期望的极性特性，例如 p，n，p +或n +在期望的位置上以期望的厚度气相沉积在基板上，以便制造优选例如作为电视摄像机管的感光体的蒸发装置。

公开(公告)号：US5233265A

公开(公告)日：1993-08-03

申请号：US561678

申请日：1990-08-01

Applicant: Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi ,  Mitsuo Kosugi ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yoshizumi Ikeda ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Hirofumi Ogawa

Inventor： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi ,  Mitsuo Kosugi ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yoshizumi Ikeda ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Hirofumi Ogawa

IPC: H01J29/45 ,  H01L31/0376 ,  H01L31/09 ,  H01L31/107 ,  H01L31/20

CPC classification number: H01J29/456 ,  H01L31/03765 ,  H01L31/095 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

Abstract translation: 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非​​晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。 在本发明的一个方面，非晶半导体层是非晶态Se。 在本发明的另一方面，非晶半导体层主要由至少包含氢或卤素元素的四面体元素组成。 当使用主要由四面体元素组成的非晶半导体层时，电荷倍增效应主要在非晶半导体的内部产生，因此可以获得具有高灵敏度的热稳定的光电导器件，同时保持良好的光响应。

公开(公告)号：US4980736A

公开(公告)日：1990-12-25

申请号：US155809

申请日：1988-02-16

Applicant: Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi

Inventor： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi

IPC: H01L31/0376 ,  H01L31/09 ,  H01L31/107 ,  H01L31/20

CPC classification number: H01L31/095 ,  H01L31/03765 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

Abstract: A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

公开(公告)号：US4239534A

公开(公告)日：1980-12-16

申请号：US072291

申请日：1979-09-04

Applicant: Kazuhisa Taketoshi

Inventor： Kazuhisa Taketoshi

IPC: C22C28/00 ,  C23C14/24 ,  C23C14/34 ,  C22C30/02 ,  C22C30/04

CPC classification number: C22C28/00 ,  C23C14/24 ,  C23C14/3407

Abstract: Ga-Cu alloy having the formula of Ga.sub.1-x Cu.sub.x, wherein x is a composition ratio parameter of Ga and Cu in a range of 0.0001.ltoreq..times..ltoreq.0.05. The alloy has a stable liquid phase at the normal temperature. The Ga-Cu alloy Ga.sub.1-x Cu.sub.x with a composition ratio parameter x (0.0001.ltoreq..times..ltoreq.0.03) is assembled into the exchangeable electrode of an evaporation system in such a way that the Ga-Cu alloy is filled in a clearance portion between a fixed electrode section fixed within the vacuum chamber of the evaporation system and an exchangeable electrode section on which an evaporation source is to be placed. With this construction, both of the fixed and exchangeable electrode sections are electrically connected with each other via the Ga-Cu alloy, and the exchangeable electrode section can be easily and rapidly removed from and placed onto the fixed electrode section.

Abstract translation: 具有式Ga1-xCux的Ga-Cu合金，其中x是Ga和Cu的组成比参数，在0.0001≤x≤0.05的范围内。 该合金在常温下具有稳定的液相。 将组成比参数x（0.0001≤x≤0.03）的Ga-Cu合金Ga1-xCux组装到蒸发系统的可更换电极中，使得Ga-Cu合金填充在间隙 固定在蒸发系统的真空室内的固定电极部分与放置有蒸发源的可更换电极部分之间的部分。 利用这种结构，两个固定和可更换的电极部分都经由Ga-Cu合金彼此电连接，并且可更换电极部分可以容易且快速地从固定电极部分移除并放置在固定电极部分上。

公开(公告)号：US4952839A

公开(公告)日：1990-08-28

申请号：US420773

申请日：1989-10-12

Applicant: Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

Inventor： Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC: H01J29/45

CPC classification number: H01J29/456

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

公开(公告)号：US4888521A

公开(公告)日：1989-12-19

申请号：US69156

申请日：1987-07-02

Applicant: Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

Inventor： Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC: H01J29/45 ,  H01J31/38

CPC classification number: H01J29/456

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Abstract translation: 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非​​晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。

公开(公告)号：US4392452A

公开(公告)日：1983-07-12

申请号：US372389

申请日：1982-04-27

Applicant: Kazuhisa Taketoshi ,  Chihaya Ogusu

Inventor： Kazuhisa Taketoshi ,  Chihaya Ogusu

IPC: H01L21/365 ,  C23C14/00 ,  H01L21/203 ,  H01L21/363 ,  H01L31/00 ,  H01L31/18 ,  C23C13/12

CPC classification number: C23C14/0021 ,  H01L21/02422 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/0248 ,  H01L21/02631 ,  H01L31/18

Abstract: In a vacuum container an active (or atomic state) gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1.times.10.sup.-3 Torr or less is produced. In an atmosphere of the active (or atomic state) gas, a film, which consists of a compound presenting semiconductor characteristics (CdS, CdSe, ZnSe, ZnS, ZnTe, CdTe) or a solid solution thereof and presents a desired polarity property such as p, n, p.sup.+ or n.sup.+, is vapor-deposited on a substrate at a desired position with a desired thickness, so as to fabricate an evaporation device which is preferable, for example, as a photoconductive target for a television camera tube.

公开(公告)号：US4289369A

公开(公告)日：1981-09-15

申请号：US121791

申请日：1980-02-15

Applicant: Kazuhisa Taketoshi

Inventor： Kazuhisa Taketoshi

IPC: C22C28/00 ,  C23C14/24 ,  C23C14/34 ,  H01R3/08

CPC classification number: C22C28/00 ,  C23C14/24 ,  C23C14/3407

Abstract: Ga-Cu alloy having the formula of Ga.sub.1-x Cu.sub.x, wherein x is a composition ratio parameter of Ga and Cu in a range of 0.000.ltoreq.x.ltoreq.0.05. The alloy has a stable liquid phase at the normal temperature. The Ga-Cu alloy Ga.sub.1-x Cu.sub.x with a composition ratio parameter x (0.0001.ltoreq.x.ltoreq.0.03) is assembled into the exchangeable electrode of an evaporation system in such a way that the Ga-Cu alloy is filled in a clearance portion between a fixed electrode section fixed within the vacuum chamber of the evaporation system and an exchangeable electrode section on which an evaporation source is to be placed. With this construction, both of the fixed and exchangeable electrode sections are electrically connected with each other via the Ga-Cu alloy, and the exchangeable electrode section can be easily and rapidly removed from and placed onto the fixed electrode section.

Abstract translation: 具有式Ga1-xCux的Ga-Cu合金，其中x是Ga和Cu的组成比参数在0.000≤x≤0.05的范围内。 该合金在常温下具有稳定的液相。 将组成比参数x（0.0001≤x≤0.03）的Ga-Cu合金Ga1-xCux组装到蒸发系统的可更换电极中，使得Ga-Cu合金填充在间隙 固定在蒸发系统的真空室内的固定电极部分与放置有蒸发源的可更换电极部分之间的部分。 利用这种结构，两个固定和可更换的电极部分都经由Ga-Cu合金彼此电连接，并且可更换电极部分可以容易且快速地从固定电极部分移除并放置在固定电极部分上。

公开(公告)号：US5539461A

公开(公告)日：1996-07-23

申请号：US216535

申请日：1994-03-23

Applicant: Fumihiko Andoh ,  Kazuhisa Taketoshi ,  Katsu Tanaka ,  Masao Yamawaki ,  Hidekazu Yamamoto ,  Hiroshi Kawashima ,  Naofumi Murata

Inventor： Fumihiko Andoh ,  Kazuhisa Taketoshi ,  Katsu Tanaka ,  Masao Yamawaki ,  Hidekazu Yamamoto ,  Hiroshi Kawashima ,  Naofumi Murata

IPC: H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/351 ,  H04N5/357 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N3/12 ,  H04N3/14 ,  H04N9/07

CPC classification number: H01L27/14665 ,  H01L27/14643 ,  H04N3/1512

Abstract: An image sensor includes a photoelectric conversion element, a first MOS transistor having having a gate connected to the photoelectric conversion element, a second MOS transistor connected in series with the first transistor, and a third MOS transistor connected in series with the photoelectric conversion element, wherein the threshold voltage of the third MOS transistor is set higher than that of the second MOS transistor. In one embodiment, each of the pixels included in a second group of rows includes a photoelectric conversion element but without the first, second and third MOS transistors. A fourth MOS transistor connects a photoelectric conversion element of the second group to a photoelectric conversion element of a first group, the photoelectric conversion elements of the first group being part of pixels which contain first, second and third MOS transistors.

Abstract translation: 图像传感器包括光电转换元件，具有连接到光电转换元件的栅极的第一MOS晶体管，与第一晶体管串联连接的第二MOS晶体管和与光电转换元件串联连接的第三MOS晶体管， 其中所述第三MOS晶体管的阈值电压被设定为高于所述第二MOS晶体管的阈值电压。 在一个实施例中，包括在第二组行中的每个像素包括光电转换元件，但不包括第一，第二和第三MOS晶体管。 第四MOS晶体管将第二组的光电转换元件连接到第一组的光电转换元件，第一组的光电转换元件是包含第一，第二和第三MOS晶体管的像素的一部分。

公开(公告)号：US5101255A

公开(公告)日：1992-03-31

申请号：US384080

申请日：1989-07-24

Applicant: Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

Inventor： Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

IPC: H01L31/0272 ,  H01L31/09

CPC classification number: H01L31/0272 ,  H01L31/095

Abstract: Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

Abstract translation: 公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层，其显示电荷倍增，并将光信号转换为电信号; 以及具有用于读取电信号的电路等的基板（例如开关元件）。 根据本发明使用的非晶半导体材料在预定的电场强度下显示充电倍增动作，从而实现具有不小于1的增益的高灵敏度光电转换装置。