公开(公告)号：US5539461A

公开(公告)日：1996-07-23

申请号：US216535

申请日：1994-03-23

申请人： Fumihiko Andoh ,  Kazuhisa Taketoshi ,  Katsu Tanaka ,  Masao Yamawaki ,  Hidekazu Yamamoto ,  Hiroshi Kawashima ,  Naofumi Murata

发明人： Fumihiko Andoh ,  Kazuhisa Taketoshi ,  Katsu Tanaka ,  Masao Yamawaki ,  Hidekazu Yamamoto ,  Hiroshi Kawashima ,  Naofumi Murata

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/351 ,  H04N5/357 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N3/12 ,  H04N3/14 ,  H04N9/07

CPC分类号： H01L27/14665 ,  H01L27/14643 ,  H04N3/1512

摘要： An image sensor includes a photoelectric conversion element, a first MOS transistor having having a gate connected to the photoelectric conversion element, a second MOS transistor connected in series with the first transistor, and a third MOS transistor connected in series with the photoelectric conversion element, wherein the threshold voltage of the third MOS transistor is set higher than that of the second MOS transistor. In one embodiment, each of the pixels included in a second group of rows includes a photoelectric conversion element but without the first, second and third MOS transistors. A fourth MOS transistor connects a photoelectric conversion element of the second group to a photoelectric conversion element of a first group, the photoelectric conversion elements of the first group being part of pixels which contain first, second and third MOS transistors.

摘要翻译： 图像传感器包括光电转换元件，具有连接到光电转换元件的栅极的第一MOS晶体管，与第一晶体管串联连接的第二MOS晶体管和与光电转换元件串联连接的第三MOS晶体管， 其中所述第三MOS晶体管的阈值电压被设定为高于所述第二MOS晶体管的阈值电压。 在一个实施例中，包括在第二组行中的每个像素包括光电转换元件，但不包括第一，第二和第三MOS晶体管。 第四MOS晶体管将第二组的光电转换元件连接到第一组的光电转换元件，第一组的光电转换元件是包含第一，第二和第三MOS晶体管的像素的一部分。

公开(公告)号：US5399882A

公开(公告)日：1995-03-21

申请号：US77070

申请日：1993-06-16

申请人： Fumihiko Andoh ,  Kazunori Miyakawa ,  Hidekazu Yamamoto ,  Masao Yamawaki

发明人： Fumihiko Andoh ,  Kazunori Miyakawa ,  Hidekazu Yamamoto ,  Masao Yamawaki

IPC分类号： H01J9/233 ,  H01J29/45 ,  H01L27/146 ,  H01L31/08 ,  H04N5/335 ,  H04N5/369 ,  H01L29/18 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14665 ,  Y10S148/172

摘要： A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.

摘要翻译： 提供了具有良好乘法特性（量子效率）以及可见光区域（特别是红色区域中的改善的灵敏度）的相机装置及其制造方法。 相机装置包括空穴注入停止层，包括硒的第一光电转换层，具有与第一光电转换层不同的光谱灵敏度特性的第二光电转换层，包含硒的第三光电转换层和电子 注射停止层。 结果，可以同时提高乘法特性（量子效率）和提高可见光区域（特别是红色区域）的灵敏度。

公开(公告)号：US5466613A

公开(公告)日：1995-11-14

申请号：US370958

申请日：1995-01-10

申请人： Fumihiko Andoh ,  Kazunori Miyakawa ,  Hidekazu Yamamoto ,  Masao Yamawaki

发明人： Fumihiko Andoh ,  Kazunori Miyakawa ,  Hidekazu Yamamoto ,  Masao Yamawaki

IPC分类号： H01J9/233 ,  H01J29/45 ,  H01L27/146 ,  H01L31/08 ,  H04N5/335 ,  H04N5/369 ,  H01L31/18 ,  H01L31/0272

CPC分类号： H01L27/14665 ,  Y10S148/172

摘要： A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.

摘要翻译： 提供了具有良好乘法特性（量子效率）以及可见光区域（特别是红色区域中的改善的灵敏度）的相机装置及其制造方法。 相机装置包括空穴注入停止层，包括硒的第一光电转换层，具有与第一光电转换层不同的光谱灵敏度特性的第二光电转换层，包含硒的第三光电转换层和电子 注射停止层。 结果，可以同时提高乘法特性（量子效率）和提高可见光区域（特别是红色区域）的灵敏度。

公开(公告)号：US5371397A

公开(公告)日：1994-12-06

申请号：US18146

申请日：1993-02-16

申请人： Shigeto Maegawa ,  Hidekazu Yamamoto ,  Hiroshi Kawashima

发明人： Shigeto Maegawa ,  Hidekazu Yamamoto ,  Hiroshi Kawashima

IPC分类号： G02B27/00 ,  H01L27/14 ,  H01L27/148 ,  H04N5/335 ,  H04N5/359 ,  H04N5/372

CPC分类号： H01L27/14806 ,  H01L27/14627 ,  H01L27/14831

摘要： A solid-state imaging device includes a semiconductor substrate in which an element part including a plurality of light responsive elements for generating charge carriers in response to incident light and a transfer part for transferring the charge carriers generated in each light responsive element are incorporated; a lens layer is disposed on the element part so that incident light is collected in the light responsive elements; and a light beam dispersion layer is disposed between the lens layer and the element part and includes two light transmissive layers having different refractive indices for dispersing light collected by the lens layer so that collected light entering respective light responsive elements is closer to a parallel beam than the incident light. By suppressing broadening of incident light in the semiconductor substrate at the light responsive elements, fewer charge carriers enter the CCD channel region and smear is reduced.

摘要翻译： 固态成像装置包括：半导体衬底，其中包含元件部分，其包括响应于入射光而产生电荷载流子的多个光响应元件和用于转移在每个光响应元件中产生的电荷载流子的转移部分; 透镜层设置在元件部分上，使得入射光被收集在光响应元件中; 并且光束分散层设置在透镜层和元件部分之间，并且包括具有不同折射率的两个透光层，用于分散由透镜层收集的光，使得进入各个光响应元件的收集光更接近平行光束 事件光。 通过抑制在光响应元件处的半导体衬底中的入射光的增宽，较少的电荷载流子进入CCD通道区域并且减少了涂片。

公开(公告)号：US20130022879A1

公开(公告)日：2013-01-24

申请号：US13639396

申请日：2011-04-28

申请人： Hidekazu Yamamoto ,  Kouhei Tuduki ,  Taizou Sunano ,  Maruo Kamino ,  Youichi Ohashi ,  Minoru Kotato

发明人： Hidekazu Yamamoto ,  Kouhei Tuduki ,  Taizou Sunano ,  Maruo Kamino ,  Youichi Ohashi ,  Minoru Kotato

IPC分类号： H01M10/0564

CPC分类号： H01M10/0567 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M10/0525 ,  H01M10/0569 ,  H01M2300/0034 ,  Y02E60/122

摘要： Provided is a nonaqueous electrolyte secondary battery which, even in the case of using a low-viscosity solvent having a narrow potential window, can increase the electrochemical stability of the nonaqueous electrolyte solution and suppress side reactions of the nonaqueous electrolyte solution during charge and discharge to reduce the degradation of the battery characteristics and has an excellent storage characteristic in high-temperature environments and a nonaqueous electrolyte solution for the nonaqueous electrolyte secondary battery. The nonaqueous electrolyte secondary battery includes: a positive electrode containing a positive-electrode active material; a negative electrode containing a negative-electrode active material; and a nonaqueous electrolyte solution containing a solute dissolved in a nonaqueous solvent, wherein the nonaqueous electrolyte solution further contains benzotrifluoride and a diisocyanate compound and the content of benzotrifluoride is 5% by volume or more in the nonaqueous electrolyte solution except the solute.

摘要翻译： 提供一种非水电解质二次电池，即使在使用具有窄势窗的低粘度溶剂的情况下，也能够提高非水电解液的电化学稳定性，抑制非水电解液在充放电期间的副反应 降低电池特性的劣化，并且在高温环境中具有优异的储存特性和用于非水电解质二次电池的非水电解质溶液。 非水电解质二次电池包括：含有正极活性物质的正极; 含有负极活性物质的负极; 以及含有溶解在非水溶剂中的溶质的非水电解液，其中所述非水电解质溶液还含有苯并三氟化物和二异氰酸酯化合物，并且所述非水电解质溶液中除所述溶质以外，所述三氟甲苯的含量为5体积％以上。

公开(公告)号：US20110200887A1

公开(公告)日：2011-08-18

申请号：US13029774

申请日：2011-02-17

申请人： Kouhei Tuduki ,  Hidekazu Yamamoto ,  Taizou Sunano ,  Maruo Kamino

发明人： Kouhei Tuduki ,  Hidekazu Yamamoto ,  Taizou Sunano ,  Maruo Kamino

IPC分类号： H01M10/02

CPC分类号： H01M10/0567 ,  H01M4/386 ,  H01M10/052

摘要： A non-aqueous electrolyte secondary battery includes a positive electrode (1), a negative electrode (2) containing a negative electrode active material, a separator 3 interposed between the electrodes (1) and (2), and a non-aqueous electrolyte containing a non-aqueous solvent and a solute dissolved in the solvent. The non-aqueous electrolyte contains a compound represented by the following chemical formula (1): wherein n is an integer of from 2 to 6, each R represents a linear saturated hydrocarbon that may be an unsubstituted or may have a substituted group, and the Rs may be the same or different groups.

摘要翻译： 非水电解质二次电池包括正极（1），含有负极活性物质的负极（2），插入电极（1）和（2）之间的隔膜3和含有 非水溶剂和溶解在溶剂中的溶质。 非水电解质含有下述化学式（1）表示的化合物：其中，n为2〜6的整数，R表示可以为未取代的或可具有取代基的直链状饱和烃， Rs可以是相同或不同的组。

公开(公告)号：US20060222944A1

公开(公告)日：2006-10-05

申请号：US11385836

申请日：2006-03-22

申请人： Hidekazu Yamamoto ,  Keiji Saisho ,  Yoshio Kato ,  Shigeki Matsuta

发明人： Hidekazu Yamamoto ,  Keiji Saisho ,  Yoshio Kato ,  Shigeki Matsuta

IPC分类号： H01M4/58 ,  H01M2/16 ,  H01M4/62

CPC分类号： H01M10/052 ,  H01M2/16 ,  H01M2/1673 ,  H01M2/1686 ,  H01M4/0426 ,  H01M4/13 ,  H01M4/131 ,  H01M4/134 ,  H01M4/1391 ,  H01M4/1395 ,  H01M4/386 ,  H01M4/62 ,  H01M10/0567

摘要： Disclosed is a nonaqueous electrolyte secondary battery which has a negative electrode containing silicon as a negative active material, a positive electrode containing a positive active material, a nonaqueous electrolyte and a separator. Characteristically, an additive which retards oxidation of silicon during operation of the battery is contained either in an interior or surface portion of the positive electrode, or in an interior or surface portion of the negative electrode, or in an interior or surface portion of the separator.

摘要翻译： 公开了一种非水电解质二次电池，其具有含有硅作为负极活性物质的负极，含有正极活性物质的正极，非水电解质和隔膜。 特征在于，在电池操作期间阻止硅的氧化的添加剂包含在正极的内部或表面部分中，或者包含在负极的内部或表面部分中，或者包含在隔板的内部或表面部分中 。

公开(公告)号：US06461447B1

公开(公告)日：2002-10-08

申请号：US09607626

申请日：2000-06-30

申请人： Hiroshi Shinyashiki ,  Hiroshi Koya ,  Tomonori Yamaoka ,  Kazuhito Matsukawa ,  Yasuhiro Kimura ,  Hidekazu Yamamoto

发明人： Hiroshi Shinyashiki ,  Hiroshi Koya ,  Tomonori Yamaoka ,  Kazuhito Matsukawa ,  Yasuhiro Kimura ,  Hidekazu Yamamoto

IPC分类号： H01L2900

CPC分类号： C30B29/06 ,  C30B15/203

摘要： A substrate having a surface on which silicon is epitaxially grown; wherein the substrate is cut from an oxygen induced stacking fault generation area of a single crystal silicon rod grown by the Czochralski method.

摘要翻译： 具有外延生长硅的表面的衬底; 其特征在于，所述基板由通过切克劳斯基法（Czochralski）法生长的单晶硅棒的氧诱导堆垛层错产生区切割。

公开(公告)号：US5876819A

公开(公告)日：1999-03-02

申请号：US554509

申请日：1995-11-07

申请人： Yasuhiro Kimura ,  Keiji Yamauchi ,  Hidekazu Yamamoto ,  Shigehisa Yamamoto ,  Masafumi Katsumata ,  Yasukazu Mukogawa ,  Hajime Watanabe

发明人： Yasuhiro Kimura ,  Keiji Yamauchi ,  Hidekazu Yamamoto ,  Shigehisa Yamamoto ,  Masafumi Katsumata ,  Yasukazu Mukogawa ,  Hajime Watanabe

IPC分类号： C30B33/00 ,  G03F9/00 ,  H01L23/544 ,  B32B3/02

CPC分类号： C30B29/06 ,  C30B33/00 ,  G03F9/7003 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/975 ,  Y10T428/21 ,  Y10T428/216 ,  Y10T428/219

摘要： A semiconductor substrate with no reduction in the effective usage area and mechanical strength, and non-uniformity of the resist film thickness, and method of manufacturing and using the same are obtained. A detection mark for detecting the crystal orientation of a silicon wafer having an outer perimeter entirely of a circular contour is formed at a predetermined region of the silicon wafer. The crystal orientation of the semiconductor wafer can easily be detected with the outer perimeter still taking a circular contour. Therefore, various problems encountered in a conventional semiconductor substrate having an orientation flat or notch such as reduction in mechanical strength and effective usage area, and non-uniformity of the resist film can be circumvented.

摘要翻译： 获得了不降低有效使用面积和机械强度以及抗蚀剂膜厚度的不均匀性的半导体衬底及其制造和使用方法。 在硅晶片的预定区域处形成用于检测具有整个圆形轮廓的外周的硅晶片的晶体取向的检测标记。 半导体晶片的晶体取向可以容易地被检测到外周仍然采取圆形轮廓。 因此，可以避免在具有取向平面或缺口的常规半导体衬底中遇到的各种问题，例如机械强度降低和有效使用面积，以及抗蚀剂膜的不均匀性。

公开(公告)号：US5040038A

公开(公告)日：1991-08-13

申请号：US262056

申请日：1988-10-24

申请人： Naoki Yutani ,  Sotoju Asai ,  Shiro Hine ,  Satoshi Hirose ,  Hidekazu Yamamoto ,  Masashi Ueno

发明人： Naoki Yutani ,  Sotoju Asai ,  Shiro Hine ,  Satoshi Hirose ,  Hidekazu Yamamoto ,  Masashi Ueno

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/365 ,  H04N5/372

CPC分类号： H01L27/14831

摘要： A solid-state image sensor comprises photoelectric converting devices (22) formed on a p type semiconductor substrate (1), transfer gates (26) for reading signal charges therefrom, scanning lines (21) for selecting the transfer gates (26), and transfer electrodes (11) of the first layer and transfer electrodes (12) of the second layer alternately disposed for transferring in the vertical direction the read signal charges. All the electrodes of the transfer gates (26) are formed integrally with the transfer electrodes (12) of the second layer, with the result that all the electrodes of the transfer gates (26) are common to the transfer electrodes of the same layer (the second layer). Although the potential wall (340) is formed in the transfer channel (3) beneath the transfer electrode (12) connected to the transfer gate (26), the same is insulated from adjacent the transfer electrode (11) on the charge transfer direction side. As a result, when a voltage is applied to the transfer electrode adjacent thereto, the signal charges are fully transferred.

摘要翻译： 固态图像传感器包括形成在p型半导体衬底（1）上的光电转换器件（22），用于读取信号电荷的传输门（26），用于选择传输门（26）的扫描线（21） 交替地设置第一层的电极（11）和第二层的传输电极（12），用于在垂直方向上传送读取信号电荷。 传输栅极（26）的所有电极与第二层的传输电极（12）整体形成，结果是传输栅极（26）的所有电极对同一层的传输电极是共同的（ 第二层）。 尽管在连接到传输栅极（26）的传输电极（12）下方的传输沟道（3）中形成了电位壁（340），但是在电荷转移方向侧上与传输电极（11）相邻的电位壁 。 结果，当对与其相邻的转印电极施加电压时，信号电荷被完全转印。