公开(公告)号：US20080199769A1

公开(公告)日：2008-08-21

申请号：US12071195

申请日：2008-02-19

申请人： Kazuma Saito ,  Kenji Hirakawa

发明人： Kazuma Saito ,  Kenji Hirakawa

IPC分类号： H01M2/14 ,  H01M6/06 ,  H01M6/00

CPC分类号： H01M2/162 ,  H01M2/1613 ,  H01M2/1633 ,  H01M10/121 ,  H01M10/4235 ,  H01M2300/0005 ,  H01M2300/0091 ,  Y10T29/49108

摘要： To improve the penetration short-circuit resistance of a valve-regulated lead-acid battery. A mixed and scooped mat of glass fibers and organic fibers is used as a separator 3 of a battery comprising an electrode plate pack 4 obtained by inserting the separator 3 between a positive electrode plate 2 and a negative electrode plate 1 and housed in a container 5 and an electrolyte retained in the electrode plate pack 4 and the separator 3, wherein the separator is a mixed and scooped mat of glass fibers and organic fibers and the electrolyte is silica sol mixed with silica and silica sol is injected as the electrolyte.

摘要翻译： 提高阀控铅酸蓄电池的穿透短路电阻。 使用玻璃纤维和有机纤维的混合和舀取的垫作为包括通过将隔板3插入正极板2和负极板1并容纳在容器5中而获得的电极板组件4的电池的隔板3 以及保持在电极板组件4和隔片3中的电解质，其中隔板是玻璃纤维和有机纤维的混合和舀起的垫，并且电解质是与二氧化硅混合的二氧化硅溶胶，并且注入硅溶胶作为电解质。

公开(公告)号：US08323811B2

公开(公告)日：2012-12-04

申请号：US12309864

申请日：2007-08-03

申请人： Kazuma Saito ,  Kenji Hirakawa ,  Motoshi Kiribayashi

发明人： Kazuma Saito ,  Kenji Hirakawa ,  Motoshi Kiribayashi

IPC分类号： H01M2/12 ,  H01M2/00

CPC分类号： H01M2/043 ,  H01M2/024 ,  H01M2/1247 ,  H01M2/1252 ,  H01M2/36 ,  H01M10/12 ,  H01M10/613 ,  H01M10/625 ,  H01M10/647 ,  H01M10/6551 ,  Y02E60/126

摘要： A lead acid storage battery according to the present invention comprises a battery container for housing a plurality of cells, a middle lid for covering the battery container, and an upper lid for covering the middle lid, wherein, on the upper surface of the middle lid, a gas discharging port for discharging the gas generated inside of the cell and an electrolyte recirculating port for recirculating the moisture to be discharged along with the gas within the cell are formed as corresponding to each cell. A plurality of exhaust chambers separated by an exhaust chamber partition are formed in a space surrounded by the middle lid and the upper lid, and a mechanism for collectively exhausting the gas discharged from the gas discharging port to the outside of the battery by interconnecting the plurality of exhaust chambers is comprised.

摘要翻译： 根据本发明的铅蓄电池包括容纳多个电池的电池容器，用于覆盖电池容器的中间盖和用于覆盖中间盖的上盖，其中在中间盖的上表面上 与每个电池相对应地形成用于排出在电池内部产生的气体的气体排出口和用于使待排出的湿气与电池内的气体再循环的电解质再循环端口。 在由中间盖和上盖包围的空间中形成有由排气室隔板分隔开的多个排气室，以及用于将从气体排出口排出的气体排出到电池外部的机构， 的排气室。

公开(公告)号：US08257856B2

公开(公告)日：2012-09-04

申请号：US12071195

申请日：2008-02-19

申请人： Kazuma Saito ,  Kenji Hirakawa

发明人： Kazuma Saito ,  Kenji Hirakawa

IPC分类号： H01M2/14

CPC分类号： H01M2/162 ,  H01M2/1613 ,  H01M2/1633 ,  H01M10/121 ,  H01M10/4235 ,  H01M2300/0005 ,  H01M2300/0091 ,  Y10T29/49108

摘要： To improve the penetration short-circuit resistance of a valve-regulated lead-acid battery. A mixed and scooped mat of glass fibers and organic fibers is used as a separator 3 of a battery comprising an electrode plate pack 4 obtained by inserting the separator 3 between a positive electrode plate 2 and a negative electrode plate 1 and housed in a container 5 and an electrolyte retained in the electrode plate pack 4 and the separator 3, wherein the separator is a mixed and scooped mat of glass fibers and organic fibers and the electrolyte is silica sol mixed with silica and silica sol is injected as the electrolyte.

摘要翻译： 提高阀控铅酸蓄电池的穿透短路电阻。 使用玻璃纤维和有机纤维的混合和舀取的垫作为包括通过将隔板3插入正极板2和负极板1并容纳在容器5中而获得的电极板组件4的电池的隔板3 以及保持在电极板组件4和隔片3中的电解质，其中隔板是玻璃纤维和有机纤维的混合和舀起的垫，并且电解质是与二氧化硅混合的二氧化硅溶胶，并且注入硅溶胶作为电解质。

公开(公告)号：US20090325040A1

公开(公告)日：2009-12-31

申请号：US12309864

申请日：2007-08-03

申请人： Kazuma Saito ,  Kenji Hirakawa ,  Motoshi Kiribayashi

发明人： Kazuma Saito ,  Kenji Hirakawa ,  Motoshi Kiribayashi

IPC分类号： H01M2/12

CPC分类号： H01M2/043 ,  H01M2/024 ,  H01M2/1247 ,  H01M2/1252 ,  H01M2/36 ,  H01M10/12 ,  H01M10/613 ,  H01M10/625 ,  H01M10/647 ,  H01M10/6551 ,  Y02E60/126

摘要： A lead acid storage battery according to the present invention comprises a battery container for housing a plurality of cells, a middle lid for covering the battery container, and an upper lid for covering the middle lid, wherein, on the upper surface of the middle lid, a gas discharging port for discharging the gas generated inside of the cell and an electrolyte recirculating port for recirculating the moisture to be discharged along with the gas within the cell are formed as corresponding to each cell. A plurality of exhaust chambers separated by an exhaust chamber partition are formed in a space surrounded by the middle lid and the upper lid, and a mechanism for collectively exhausting the gas discharged from the gas discharging port to the outside of the battery by interconnecting the plurality of exhaust chambers is comprised.

摘要翻译： 根据本发明的铅蓄电池包括容纳多个电池的电池容器，用于覆盖电池容器的中间盖和用于覆盖中间盖的上盖，其中在中间盖的上表面上 与每个电池相对应地形成用于排出在电池内部产生的气体的气体排出口和用于使待排出的湿气与电池内的气体再循环的电解质再循环端口。 在由中间盖和上盖包围的空间中形成有由排气室隔板分隔开的多个排气室，以及用于将从气体排出口排出的气体排出到电池外部的机构， 的排气室。

公开(公告)号：US5204276A

公开(公告)日：1993-04-20

申请号：US645313

申请日：1991-01-24

申请人： Hiroomi Nakajima ,  Nobuyuki Itoh ,  Hiroyuki Nihira ,  Eiryo Tsukioka ,  Kenji Hirakawa ,  Shin-ichi Taka ,  Hideki Takada ,  Yasuhiro Katsumata ,  Toshio Yamaguchi

发明人： Hiroomi Nakajima ,  Nobuyuki Itoh ,  Hiroyuki Nihira ,  Eiryo Tsukioka ,  Kenji Hirakawa ,  Shin-ichi Taka ,  Hideki Takada ,  Yasuhiro Katsumata ,  Toshio Yamaguchi

IPC分类号： H01L21/033 ,  H01L21/225 ,  H01L21/285 ,  H01L21/331

CPC分类号： H01L29/66272 ,  H01L21/033 ,  H01L21/2257 ,  H01L21/28525 ,  Y10S148/009 ,  Y10S148/124

摘要： In the method of manufacturing a semiconductor device, a buffer oxide film, an oxidation-resistant film and a first poly-Si film containing a p-type impurity are successively formed to form a laminate structure on the n-type collector region, followed by forming a protective oxide film by CVD. Then, an opening portion reaching the oxidation-resistant film is formed, followed by forming a second protective insulation film to cover the surface of the first poly-Si film exposed at the side wall of the opening portion. The oxidation-resistant film is excessively etched using the protective insulation films as an etching mask so as to expose the buffer oxide film and to form a bore below the first poly-Si film. The exposed buffer oxide film is removed, followed by filling the bore with a second poly-Si film. Then, a heat treatment is performed under an oxidative atmosphere to form a thermal oxide film covering the surface of the second poly-Si film. At the same time, the p-type impurity contained in the first poly-Si film is diffused through the second poly-Si film into the collector region to form a p-type outer base region. Further, a p-type inner base region, n-type emitter region and an emitter electrode are formed.

摘要翻译： 在制造半导体器件的方法中，依次形成缓冲氧化膜，耐氧化膜和含有p型杂质的第一多晶硅膜，以在n型集电极区域上形成叠层结构，随后 通过CVD形成保护性氧化膜。 然后，形成到达抗氧化膜的开口部分，然后形成第二保护绝缘膜以覆盖暴露在开口部分的侧壁处的第一多晶硅膜的表面。 使用保护绝缘膜作为蚀刻掩模来过度蚀刻抗氧化膜，以暴露缓冲氧化物膜并在第一多晶硅膜下方形成孔。 除去暴露的缓冲氧化物膜，然后用第二多晶硅膜填充孔。 然后，在氧化气氛下进行热处理，形成覆盖第二多晶硅膜表面的热氧化膜。 同时，包含在第一多晶硅膜中的p型杂质通过第二多晶硅膜扩散到集电区域中，形成p型外基区。 此外，形成p型内基区，n型发射极区和发射极。

公开(公告)号：US20050113951A1

公开(公告)日：2005-05-26

申请号：US10933439

申请日：2004-09-03

申请人： Tatsuo Akiyama ,  Masahiro Abe ,  Kenji Hirakawa ,  Shigeru Komatsu

发明人： Tatsuo Akiyama ,  Masahiro Abe ,  Kenji Hirakawa ,  Shigeru Komatsu

IPC分类号： H01L21/02 ,  G06F17/50 ,  G06F19/00

CPC分类号： G06F17/5068

摘要： A method for designing a manufacturing process of an electronic device includes calibrating a technology computer-aided design system by fitting simulation parameters of manufacturing process and electrical characteristic simulations, using first feature of commercial manufacturing process of first electronic device manufactured by first manufacturing facilities, and first electrical characteristic of the first electronic device; acquiring second feature of trial manufacturing process of second electronic device manufactured by second manufacturing facilities, and second electrical characteristic of the second electronic device; calculating simulation electrical characteristic of the second electronic device by substituting the second feature to the manufacturing process simulation corresponding to the trial manufacturing process; comparing the second electrical characteristic with the simulation electrical characteristic; and creating design specification of commercial manufacturing process of the second manufacturing facilities based on difference between the second electrical characteristic and the simulation electrical characteristic.

摘要翻译： 一种设计电子设备的制造方法的方法，包括使用第一制造设备制造的第一电子设备的商业制造工艺的第一特征，通过拟合制造工艺和电气特性模拟的仿真参数来校准技术计算机辅助设计系统，以及 第一电子装置的第一电特性; 获得由第二制造设备制造的第二电子装置的试制制造过程的第二特征和第二电子装置的第二电特性; 通过将第二特征代入对应于试制造过程的制造过程模拟来计算第二电子装置的模拟电特性; 将第二电特性与仿真电特性进行比较; 并基于第二电特性和仿真电特性之间的差异，创建第二制造设备的商业制造过程的设计规范。

公开(公告)号：US5086005A

公开(公告)日：1992-02-04

申请号：US533519

申请日：1990-06-05

申请人： Kenji Hirakawa

发明人： Kenji Hirakawa

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/732 ,  H01L29/735

CPC分类号： H01L29/66272 ,  H01L29/1008 ,  H01L29/735 ,  Y10S148/01

摘要： In a self-alignment type-lateral bipolar transistor and a manufacturing method thereof, the base width is determined not by the image resolution limit of the lithography technique, as in the prior art, but by the impurity diffusion from the polysilicon layer 118. Therefore, the self-alignment type lateral-structure pnp bipolar transistor and the manufacturing method permit the base width to be as small as possible, resulting in improvement of frequency characteristics, and reducing the size of the transistor element.

公开(公告)号：US5028550A

公开(公告)日：1991-07-02

申请号：US543378

申请日：1990-06-26

申请人： Kenji Hirakawa

发明人： Kenji Hirakawa

IPC分类号： H01L29/73 ,  H01L21/285 ,  H01L21/331 ,  H01L21/768 ,  H01L29/417 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L21/28525 ,  Y10S148/011 ,  Y10S148/124

摘要： In a method of manufacturing a semiconductor device, when contact holes are to be formed in an insulating film formed on a monocrystalline or polycrystalline semiconductor layer, the contact holes can be formed using a polycrystalline semiconductor layer formed on the insulating film as a mask. Therefore, the lithographic step of forming the contact holes in the insulating film formed on the monocrystalline or polycrystalline semiconductor layer can be eliminated.

公开(公告)号：US4471990A

公开(公告)日：1984-09-18

申请号：US454556

申请日：1982-12-30

申请人： Kenji Hirakawa ,  Haruo Sakamoto ,  Shigeru Suzuki ,  Shigeo Sugawara

发明人： Kenji Hirakawa ,  Haruo Sakamoto ,  Shigeru Suzuki ,  Shigeo Sugawara

IPC分类号： B60B17/00 ,  B60B3/02 ,  B60B21/04

CPC分类号： B60B17/0006

摘要： A railroad car wheel is designed to have an amount of displacement of 40 mm or larger, this amount being the amount of displacement of a rim portion relative to a boss portion of the wheel which is the distance between two lines perpendicular to the axis of the wheel, one from the midpoint of the thickness of a plate portion adjacent to ends of curves of the rim fillets and the other from the midpoint of thickness of the plate portion adjacent to ends of curves of the boss fillets.

摘要翻译： 铁路车轮被设计为具有40mm或更大的位移量，该量是轮缘部分相对于车轮的凸起部分的位移量，其是垂直于轴线的两条线之间的距离 从与凸起圆角的曲线的端部相邻的平板部分的厚度的中点附近的边缘圆角的曲线的端部的板部分的厚度的中点开始一个。

公开(公告)号：US07272460B2

公开(公告)日：2007-09-18

申请号：US10933439

申请日：2004-09-03

申请人： Tatsuo Akiyama ,  Masahiro Abe ,  Kenji Hirakawa ,  Shigeru Komatsu

发明人： Tatsuo Akiyama ,  Masahiro Abe ,  Kenji Hirakawa ,  Shigeru Komatsu

IPC分类号： G06F19/00 ,  G06F17/00

CPC分类号： G06F17/5068

摘要： A method for designing a manufacturing process of an electronic device includes calibrating a technology computer-aided design system by fitting simulation parameters of manufacturing process and electrical characteristic simulations, using first feature of commercial manufacturing process of first electronic device manufactured by first manufacturing facilities, and first electrical characteristic of the first electronic device; acquiring second feature of trial manufacturing process of second electronic device manufactured by second manufacturing facilities, and second electrical characteristic of the second electronic device; calculating simulation electrical characteristic of the second electronic device by substituting the second feature to the manufacturing process simulation corresponding to the trial manufacturing process; comparing the second electrical characteristic with the simulation electrical characteristic; and creating design specification of commercial manufacturing process of the second manufacturing facilities based on difference between the second electrical characteristic and the simulation electrical characteristic.

摘要翻译： 一种设计电子设备的制造方法的方法，包括使用第一制造设备制造的第一电子设备的商业制造工艺的第一特征，通过拟合制造工艺和电气特性模拟的仿真参数来校准技术计算机辅助设计系统，以及 第一电子装置的第一电特性; 获得由第二制造设备制造的第二电子装置的试制制造过程的第二特征和第二电子装置的第二电特性; 通过将第二特征代入对应于试制造过程的制造过程模拟来计算第二电子装置的模拟电特性; 将第二电特性与仿真电特性进行比较; 并基于第二电特性和仿真电特性之间的差异，创建第二制造设备的商业制造过程的设计规范。