公开(公告)号：US5669042A

公开(公告)日：1997-09-16

申请号：US214163

申请日：1994-03-17

申请人： Kazunori Kobayashi ,  Kazumi Sekine ,  Tadayuki Tsuda ,  Isao Ikemoto ,  Kazushi Watanabe ,  Yoshikazu Sasago ,  Masanobu Saito ,  Shinya Noda

发明人： Kazunori Kobayashi ,  Kazumi Sekine ,  Tadayuki Tsuda ,  Isao Ikemoto ,  Kazushi Watanabe ,  Yoshikazu Sasago ,  Masanobu Saito ,  Shinya Noda

IPC分类号： G03G15/00 ,  G03G15/08 ,  G03G21/00 ,  G03G21/18

CPC分类号： G03G21/1821 ,  G03G15/0896 ,  G03G21/1633 ,  G03G21/1647 ,  G03G21/1666 ,  G03G21/185 ,  G03G21/1853 ,  G03G2221/163 ,  G03G2221/1654 ,  G03G2221/1657

摘要： An image forming apparatus is provided for forming an image on a recording medium. The apparatus has a main body on which a process cartridge, which includes a frame, an image bearing member, a toner carrying member, and an attachment member for attaching the toner carrying member to the frame, is removably mountable. The apparatus also has a supporting device for supporting the process cartridge at the attachment member when the process cartridge is mounted in the apparatus and a feeding device for feeding the recording medium.

摘要翻译： 提供了一种用于在记录介质上形成图像的图像形成装置。 该装置具有主体，其上包括框架，图像承载构件，调色剂承载构件和用于将调色剂承载构件附接到框架的附接构件的处理盒可移除地安装在主体上。 当处理盒安装在设备中时，该设备还具有用于将处理盒支撑在附接构件上的支撑装置和用于馈送记录介质的馈送装置。

公开(公告)号：US20080119021A1

公开(公告)日：2008-05-22

申请号：US12007751

申请日：2008-01-15

申请人： Yoshio Ozawa ,  Shigehiko Saida ,  Yuji Takeuchi ,  Masanobu Saito

发明人： Yoshio Ozawa ,  Shigehiko Saida ,  Yuji Takeuchi ,  Masanobu Saito

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/66825

摘要： A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell, a floating gate electrode provided on the tunnel insulating film, a control gate electrode provided above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.

摘要翻译： 半导体器件包括半导体衬底和设置在半导体衬底上的非易失性存储单元，所述非易失性存储单元包括隧道绝缘膜，所述隧道绝缘膜具有在非易失性的沟道宽度方向周期性且连续变化的膜厚度 存储单元，设置在隧道绝缘膜上的浮置栅电极，设置在浮置栅电极上方的控制栅电极，以及设置在控制栅电极和浮栅之间的电极间绝缘膜。

公开(公告)号：US20080048250A1

公开(公告)日：2008-02-28

申请号：US11846369

申请日：2007-08-28

申请人： Hisayo MOMOSE ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

发明人： Hisayo MOMOSE ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

IPC分类号： H01L27/06

CPC分类号： H01L29/66575 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/28211 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/78

摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

摘要翻译： 半导体器件包括：p型半导体衬底（1）; 绝缘膜（3）; 经由所述绝缘膜形成在所述基板上的栅电极（2） 以及形成在形成在基板（1）上的栅电极（2）下方的沟道形成区域（4）的两侧的n型源极/漏极区域（5）。 特别地，在氧化硅膜的转换率（氧化硅当量厚度）下，确定绝缘膜（3）的厚度（T×OX ）小于2.5nm。 栅极（2）的栅极长度（L SUB）确定为等于或小于0.3μm; 并且进一步施加到栅极（2）和漏极区（6）的电压被确定为1.5V或更小。 因此，在具有隧穿栅极氧化膜（3）的MOSFET中，可以提高热载流子应力下的晶体管的可靠性，并且可以显着降低栅极漏电流，从而可以显着提高晶体管特性。

公开(公告)号：US06929990B2

公开(公告)日：2005-08-16

申请号：US10681318

申请日：2003-10-09

申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

IPC分类号： H01L21/225 ,  H01L21/336 ,  H01L27/088 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

CPC分类号： H01L29/66575 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/28211 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/78

摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

摘要翻译： 半导体器件包括：p型半导体衬底（1）; 绝缘膜（3）; 经由所述绝缘膜形成在所述基板上的栅电极（2） 以及形成在形成在基板（1）上的栅电极（2）下方的沟道形成区域（4）的两侧的n型源极/漏极区域（5）。 特别地，在氧化硅膜的转换率（氧化硅当量厚度）下，确定绝缘膜（3）的厚度（T×OX ）小于2.5nm。 栅极（2）的栅极长度（L SUB）确定为等于或小于0.3μm; 并且进一步施加到栅极（2）和漏极区（6）的电压被确定为1.5V或更小。 因此，在具有隧穿栅极氧化膜（3）的MOSFET中，可以提高热载流子应力下的晶体管的可靠性，并且可以显着降低栅极漏电流，从而可以显着提高晶体管特性。

公开(公告)号：US06410952B1

公开(公告)日：2002-06-25

申请号：US09828205

申请日：2001-04-09

申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

IPC分类号： H01L2976

摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 &mgr;m; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

公开(公告)号：US5903027A

公开(公告)日：1999-05-11

申请号：US910222

申请日：1997-08-13

申请人： Takashi Yoshitomi ,  Masanobu Saito ,  Hisayo Momose ,  Hiroshi Iwai ,  Yukihiro Ushiku ,  Mizuki Ono ,  Yasushi Akasaka ,  Hideaki Nii ,  Satoshi Matsuda ,  Yasuhiro Katsumata ,  Tatsuya Ooguro ,  Claudio Fiegna

发明人： Takashi Yoshitomi ,  Masanobu Saito ,  Hisayo Momose ,  Hiroshi Iwai ,  Yukihiro Ushiku ,  Mizuki Ono ,  Yasushi Akasaka ,  Hideaki Nii ,  Satoshi Matsuda ,  Yasuhiro Katsumata ,  Tatsuya Ooguro ,  Claudio Fiegna

IPC分类号： H01L21/033 ,  H01L21/225 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L29/76

CPC分类号： H01L29/6659 ,  H01L21/0338 ,  H01L21/2255 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823814 ,  H01L27/0928 ,  H01L29/0847 ,  H01L29/42376 ,  H01L29/66628

摘要： A MOS type semiconductor device has a gate whose length is 170 nm (0.17 .mu.m) or less, a junction depth of source and drain diffusion layers in the vicinity of a channel is 22 nm or less, and a concentration of impurities at the surface in the source and drain diffusion layers is made to 10.sup.20 cm.sup.-3 or more. Such structure is obtained using solid phase diffusion using heat range from 950.degree. C. to 1050.degree. C. and/or narrowing gate width by ashing or etching. The other MOS type semiconductor device is characterized in that the relationship between the junction depth x.sub.j �nm! in the source and drain diffusion layer regions and the effective channel length L.sub.eff �nm! is determined by L.sub.eff >0.69 x.sub.j -6.17.

摘要翻译： MOS型半导体器件具有长度为170nm（0.17μm）以下的栅极，沟道附近的源极和漏极扩散层的结深度为22nm以下，表面上的杂质浓度 在源极和漏极扩散层中形成1020cm-3以上。 这种结构使用从950℃到1050℃的热范围的固相扩散和/或通过灰化或蚀刻使栅极宽度变窄来获得。 其他MOS型半导体器件的特征在于源极和漏极扩散层区域中的结深度xj [nm]与有效沟道长度Leff [nm]之间的关系由Leff> 0.69×j-6.17确定。

公开(公告)号：US5475472A

公开(公告)日：1995-12-12

申请号：US213836

申请日：1994-03-16

申请人： Masanobu Saito ,  Masaharu Ohkubo

发明人： Masanobu Saito ,  Masaharu Ohkubo

IPC分类号： G03G21/00 ,  G03G15/00 ,  G03G15/02 ,  G03G21/18

CPC分类号： G03G15/0216

摘要： An image forming apparatus includes an image bearing member; a charging member for charging the image bearing member; an image forming device for forming an image on the image bearing member; and an impedance circuit between the charging member and a voltage source for supplying electric power to the charging member, the impedance circuit having an impedance which is peculiar to individual image forming apparatus in accordance with an impedance of the charging member.

摘要翻译： 图像形成装置包括：图像承载部件; 用于对图像承载部件充电的充电部件; 图像形成装置，用于在图像承载部件上形成图像; 以及充电构件和用于向充电构件供电的电压源之间的阻抗电路，所述阻抗电路具有根据充电构件的阻抗的各个图像形成装置特有的阻抗。

公开(公告)号：US5126913A

公开(公告)日：1992-06-30

申请号：US753027

申请日：1991-08-29

申请人： Junji Araya ,  Masanobu Saito ,  Hiroki Kisu ,  Yohji Tomoyuki ,  Shunji Nakamura ,  Noribumi Koitabashi ,  Hiroyuki Adachi

发明人： Junji Araya ,  Masanobu Saito ,  Hiroki Kisu ,  Yohji Tomoyuki ,  Shunji Nakamura ,  Noribumi Koitabashi ,  Hiroyuki Adachi

IPC分类号： G03G15/02

CPC分类号： G03G15/0233

摘要： A charging device for charging a moving member to be charged includes charging device for being contacted to the member to be charged to charge the member; a voltage source for applying a vibratory voltage to the charging device; wherein the charging device includes a first layer contactable to the member to be charged, a second layer adjacent thereto wherein the first layer is a dielectric layer having a volume resistivity larger than that of the second layer.

摘要翻译： 用于对要充电的移动部件进行充电的充电装置包括：与要充电的部件接触的充电装置，以对该部件充电; 用于向充电装置施加振动电压的电压源; 其中所述充电装置包括可与所述被充电元件接触的第一层，与其相邻的第二层，其中所述第一层是体积电阻率大于所述第二层的体积电阻率的电介质层。

公开(公告)号：US09541487B2

公开(公告)日：2017-01-10

申请号：US13574477

申请日：2011-05-18

申请人： Masanobu Saito ,  Keisuke Kodera ,  Masatoyo Oshiro

发明人： Masanobu Saito ,  Keisuke Kodera ,  Masatoyo Oshiro

IPC分类号： A61L2/24 ,  G01F22/00 ,  G01N7/14 ,  A61L2/20

CPC分类号： G01N7/14 ,  A61L2/208 ,  A61L2202/14

摘要： It is determined that indoor condensation of hydrogen peroxide vapor is to occur, if there is a solution with which both (Equation 1): PT·y1=P01·x1·γ1 and (Equation 2): PT·y2=P02·x2·γ2 hold. With this, it is possible to accurately determine whether indoor condensation of hydrogen peroxide vapor is to occur or not in decontamination.

摘要翻译： 如果存在两者（方程1）：PT·y1 = P01·x1·γ1和（等式2）的解决方案，则确定要发生过氧化氢蒸汽的室内冷凝：PT·y2 = P02·x2· γ2持有。 由此，能够精确地确定在去污中是否发生过氧化氢蒸气的室内冷凝。

公开(公告)号：US08099011B2

公开(公告)日：2012-01-17

申请号：US11954059

申请日：2007-12-11

申请人： Atsushi Toda ,  Masanobu Saito

发明人： Atsushi Toda ,  Masanobu Saito

IPC分类号： G03G15/00

CPC分类号： G03G15/0266 ,  G03G2215/021

摘要： Embodiments of the present invention include an image bearing member arranged to bear an electrostatic latent image, a charging member contacting the image bearing member to charge a surface of the image bearing member with application of a DC voltage to the charging member, a current detection unit arranged to detect a DC current flowing in the charging member, and a control unit configured to control the voltage applied to the charging member, wherein a plurality of different DC voltages are successively applied to the charging member during a period of no image formation until a change amount of change in the DC current with respect to change in the DC voltage becomes not larger than a predetermined value, and the control unit controls a DC voltage applied to the charging member during a period of image formation based on a result detected by the current detection unit.

摘要翻译： 本发明的实施例包括布置成承载静电潜像的图像承载部件，与图像承载部件接触以对图像承载部件的表面施加直流电压给充电部件充电的充电部件，电流检测单元 被配置为检测在充电构件中流动的直流电流;以及控制单元，被配置为控制施加到充电构件的电压，其中在无图像形成期间，将多个不同的直流电压连续地施加到充电构件，直到 直流电流相对于直流电压变化的变化量变得不大于预定值，并且控制单元在图像形成期间根据检测到的结果控制施加到充电部件的直流电压 电流检测单元。