公开(公告)号：US20080265417A1

公开(公告)日：2008-10-30

申请号：US12031826

申请日：2008-02-15

申请人： Kazuo KAWAMURA ,  Shinichi Akiyama ,  Satoshi Takesako

发明人： Kazuo KAWAMURA ,  Shinichi Akiyama ,  Satoshi Takesako

IPC分类号： H01L23/48 ,  H01L21/44 ,  H01L21/336

CPC分类号： H01L21/28518 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76897 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/53238 ,  H01L29/665 ,  H01L29/66537 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, includes the steps of forming an insulating film on a semiconductor substrate having a silicide layer, forming a hole in the insulating film on the silicide layer, cleaning an inside of the hole and a surface of the silicide layer, forming a titanium layer on a bottom surface and an inner peripheral surface of the hole by a CVD method, forming a copper diffusion preventing barrier metal layer on the titanium layer in the hole, and burying a copper layer in the hole.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在具有硅化物层的半导体衬底上形成绝缘膜，在硅化物层上的绝缘膜上形成空穴，清洁孔的内部和硅化物层的表面 通过CVD法在孔的底面和内周面上形成钛层，在孔内的钛层上形成铜扩散防止阻挡金属层，在该孔内埋设铜层。

公开(公告)号：US08076239B2

公开(公告)日：2011-12-13

申请号：US12031826

申请日：2008-02-15

申请人： Kazuo Kawamura ,  Shinichi Akiyama ,  Satoshi Takesako

发明人： Kazuo Kawamura ,  Shinichi Akiyama ,  Satoshi Takesako

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76897 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/53238 ,  H01L29/665 ,  H01L29/66537 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, includes the steps of forming an insulating film on a semiconductor substrate having a silicide layer, forming a hole in the insulating film on the silicide layer, cleaning an inside of the hole and a surface of the silicide layer, forming a titanium layer on a bottom surface and an inner peripheral surface of the hole by a CVD method, forming a copper diffusion preventing barrier metal layer on the titanium layer in the hole, and burying a copper layer in the hole.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在具有硅化物层的半导体衬底上形成绝缘膜，在硅化物层上的绝缘膜上形成孔，清洁孔的内部和硅化物层的表面 通过CVD法在孔的底面和内周面上形成钛层，在孔内的钛层上形成铜扩散防止阻挡金属层，在该孔内埋设铜层。

公开(公告)号：US08026164B2

公开(公告)日：2011-09-27

申请号：US12603207

申请日：2009-10-21

申请人： Satoshi Takesako ,  Shinichi Akiyama ,  Tamotsu Owada

发明人： Satoshi Takesako ,  Shinichi Akiyama ,  Tamotsu Owada

IPC分类号： H01L21/4763

CPC分类号： H01L21/76825 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31053 ,  H01L21/3121 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/76835 ,  H01L21/7684 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, includes steps of forming an organic insulating film over a semiconductor substrate, irradiating an electron beam to a surface of the organic insulating film, forming recesses in the organic insulating film, forming a conductive material over the organic insulating film and in the recesses, and removing the conductive material on the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成有机绝缘膜，将电子束照射到有机绝缘膜的表面，在有机绝缘膜中形成凹部，在有机绝缘体上形成导电材料 膜和凹部中，通过研磨去除有机绝缘膜上的导电材料，露出有机绝缘膜的表面，并将导电材料留在有机绝缘膜的凹部中。

公开(公告)号：US20100164119A1

公开(公告)日：2010-07-01

申请号：US12603207

申请日：2009-10-21

申请人： Satoshi Takesako ,  Shinichi Akiyama ,  Tamotsu Owada

发明人： Satoshi Takesako ,  Shinichi Akiyama ,  Tamotsu Owada

IPC分类号： H01L23/48 ,  H01L21/3205

CPC分类号： H01L21/76825 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31053 ,  H01L21/3121 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/76835 ,  H01L21/7684 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, includes steps of forming an organic insulating film over a semiconductor substrate, irradiating an electron beam to a surface of the organic insulating film, forming recesses in the organic insulating film, forming a conductive material over the organic insulating film and in the recesses, and removing the conductive material on the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成有机绝缘膜，将电子束照射到有机绝缘膜的表面，在有机绝缘膜中形成凹部，在有机绝缘体上形成导电材料 膜和凹部中，通过研磨去除有机绝缘膜上的导电材料，露出有机绝缘膜的表面，并将导电材料留在有机绝缘膜的凹部中。

公开(公告)号：US08614146B2

公开(公告)日：2013-12-24

申请号：US13025776

申请日：2011-02-11

申请人： Satoshi Takesako ,  Naoki Idani

发明人： Satoshi Takesako ,  Naoki Idani

IPC分类号： H01L21/768

CPC分类号： H01L21/7684 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76808 ,  H01L21/76813 ,  H01L23/522 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device manufacture method includes: forming an insulating film above a semiconductor substrate; etching the insulating film to form a dummy groove having a first depth, a wiring groove having a second depth deeper than the first depth, and a via hole to be disposed on a bottom of the wiring groove; depositing a conductive material in the dummy groove, wiring groove and via hole and above the insulating film; and polishing and removing the conductive material above the insulating film.

摘要翻译： 半导体器件制造方法包括：在半导体衬底上形成绝缘膜; 蚀刻绝缘膜以形成具有第一深度的虚设槽，具有比第一深度更深的第二深度的布线槽和布置在布线槽的底部的通孔; 在虚设槽，布线槽和通孔中以及绝缘膜上方沉积导电材料; 并且在绝缘膜上抛光和去除导电材料。

公开(公告)号：US07449234B2

公开(公告)日：2008-11-11

申请号：US10443779

申请日：2003-05-23

申请人： Toshihiro Fukagawa ,  Akira Obara ,  Tetsuya Ogawa ,  Satoshi Yoshida ,  Yu Murai ,  Satoshi Takesako

发明人： Toshihiro Fukagawa ,  Akira Obara ,  Tetsuya Ogawa ,  Satoshi Yoshida ,  Yu Murai ,  Satoshi Takesako

IPC分类号： B32B5/22 ,  F16D13/00

CPC分类号： C04B41/009 ,  C04B35/63496 ,  C04B35/83 ,  C04B41/5057 ,  C04B41/5068 ,  C04B41/87 ,  C04B2111/00353 ,  C04B2111/00362 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/3847 ,  C04B2235/386 ,  C04B2235/3886 ,  C04B2235/404 ,  C04B2235/48 ,  C04B2235/5445 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  F16D69/023 ,  Y10T428/249981 ,  Y10T428/249986 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/30 ,  Y10T428/31504 ,  C04B41/4539 ,  C04B41/4556

摘要： A sliding material consisting of a carbon-fiber reinforced carbon composite material containing fine particles of a simple substance of any of Group IV to Group VI elements or a carbide, a nitride or an oxide thereof.

摘要翻译： 由含有IV族至Ⅵ族元素中任一种的单质的微粒或碳化物，氮化物或氧化物的碳纤维增强碳复合材料构成的滑动材料。