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公开(公告)号：US08076239B2
公开(公告)日：2011-12-13
申请号：US12031826
申请日：2008-02-15
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L21/76897 , H01L21/823412 , H01L21/823418 , H01L21/823475 , H01L23/485 , H01L23/53238 , H01L29/665 , H01L29/66537 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7834 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, includes the steps of forming an insulating film on a semiconductor substrate having a silicide layer, forming a hole in the insulating film on the silicide layer, cleaning an inside of the hole and a surface of the silicide layer, forming a titanium layer on a bottom surface and an inner peripheral surface of the hole by a CVD method, forming a copper diffusion preventing barrier metal layer on the titanium layer in the hole, and burying a copper layer in the hole.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：在具有硅化物层的半导体衬底上形成绝缘膜，在硅化物层上的绝缘膜上形成孔，清洁孔的内部和硅化物层的表面 通过CVD法在孔的底面和内周面上形成钛层，在孔内的钛层上形成铜扩散防止阻挡金属层，在该孔内埋设铜层。
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公开(公告)号：US20080265417A1
公开(公告)日：2008-10-30
申请号：US12031826
申请日：2008-02-15
IPC分类号： H01L23/48 , H01L21/44 , H01L21/336
CPC分类号： H01L21/28518 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L21/76897 , H01L21/823412 , H01L21/823418 , H01L21/823475 , H01L23/485 , H01L23/53238 , H01L29/665 , H01L29/66537 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7834 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, includes the steps of forming an insulating film on a semiconductor substrate having a silicide layer, forming a hole in the insulating film on the silicide layer, cleaning an inside of the hole and a surface of the silicide layer, forming a titanium layer on a bottom surface and an inner peripheral surface of the hole by a CVD method, forming a copper diffusion preventing barrier metal layer on the titanium layer in the hole, and burying a copper layer in the hole.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：在具有硅化物层的半导体衬底上形成绝缘膜，在硅化物层上的绝缘膜上形成空穴，清洁孔的内部和硅化物层的表面 通过CVD法在孔的底面和内周面上形成钛层，在孔内的钛层上形成铜扩散防止阻挡金属层，在该孔内埋设铜层。
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公开(公告)号：US08026164B2
公开(公告)日：2011-09-27
申请号：US12603207
申请日：2009-10-21
IPC分类号： H01L21/4763
CPC分类号： H01L21/76825 , H01L21/02123 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02351 , H01L21/3105 , H01L21/31053 , H01L21/3121 , H01L21/3212 , H01L21/76819 , H01L21/76835 , H01L21/7684 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, includes steps of forming an organic insulating film over a semiconductor substrate, irradiating an electron beam to a surface of the organic insulating film, forming recesses in the organic insulating film, forming a conductive material over the organic insulating film and in the recesses, and removing the conductive material on the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film.
摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成有机绝缘膜，将电子束照射到有机绝缘膜的表面，在有机绝缘膜中形成凹部，在有机绝缘体上形成导电材料 膜和凹部中，通过研磨去除有机绝缘膜上的导电材料，露出有机绝缘膜的表面，并将导电材料留在有机绝缘膜的凹部中。
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公开(公告)号：US20100164119A1
公开(公告)日：2010-07-01
申请号：US12603207
申请日：2009-10-21
IPC分类号： H01L23/48 , H01L21/3205
CPC分类号： H01L21/76825 , H01L21/02123 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02351 , H01L21/3105 , H01L21/31053 , H01L21/3121 , H01L21/3212 , H01L21/76819 , H01L21/76835 , H01L21/7684 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, includes steps of forming an organic insulating film over a semiconductor substrate, irradiating an electron beam to a surface of the organic insulating film, forming recesses in the organic insulating film, forming a conductive material over the organic insulating film and in the recesses, and removing the conductive material on the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film.
摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成有机绝缘膜，将电子束照射到有机绝缘膜的表面，在有机绝缘膜中形成凹部，在有机绝缘体上形成导电材料 膜和凹部中，通过研磨去除有机绝缘膜上的导电材料，露出有机绝缘膜的表面，并将导电材料留在有机绝缘膜的凹部中。
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公开(公告)号：US08030207B2
公开(公告)日：2011-10-04
申请号：US12110662
申请日：2008-04-28
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译： 制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜 的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。
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公开(公告)号：US07829461B2
公开(公告)日：2010-11-09
申请号：US11898409
申请日：2007-09-12
申请人： Kazuo Kawamura , Shinichi Akiyama
发明人： Kazuo Kawamura , Shinichi Akiyama
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/26506 , H01L21/28052 , H01L21/823814 , H01L21/823864 , H01L29/665 , H01L29/6653 , H01L29/6656
摘要： A semiconductor device fabrication method by which the thermal stability of nickel silicide can be improved. Nickel (or a nickel alloy) is formed over a semiconductor substrate on which a gate region, a source region, and a drain region are formed. Dinickel silicide is formed by performing a first annealing step, followed by a selective etching step. By performing a plasma treatment step, plasma which contains hydrogen ions is generated and the hydrogen ions are implanted in the dinickel silicide or the gate region, the source region, and the drain region under the dinickel silicide. The dinickel silicide is phase-transformed into nickel silicide by performing a second annealing step.
摘要翻译： 可以提高硅化镍的热稳定性的半导体器件制造方法。 镍（或镍合金）形成在其上形成有栅极区，源极区和漏极区的半导体衬底上。 通过进行第一退火步骤，然后进行选择性蚀刻步骤来形成硅化镍。 通过进行等离子体处理步骤，产生含有氢离子的等离子体，并且将氢离子注入硅化二锡或硅化二锡内的栅极区，源极区和漏极区。 通过进行第二退火步骤，将二锡硅化物相转化成硅化镍。
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公开(公告)号：US20080124922A1
公开(公告)日：2008-05-29
申请号：US11898409
申请日：2007-09-12
申请人： Kazuo Kawamura , Shinichi Akiyama
发明人： Kazuo Kawamura , Shinichi Akiyama
IPC分类号： H01L21/441
CPC分类号： H01L21/28518 , H01L21/26506 , H01L21/28052 , H01L21/823814 , H01L21/823864 , H01L29/665 , H01L29/6653 , H01L29/6656
摘要： A semiconductor device fabrication method by which the thermal stability of nickel silicide can be improved. Nickel (or a nickel alloy) is formed over a semiconductor substrate on which a gate region, a source region, and a drain region are formed. Dinickel silicide is formed by performing a first annealing step, followed by a selective etching step. By performing a plasma treatment step, plasma which contains hydrogen ions is generated and the hydrogen ions are implanted in the dinickel silicide or the gate region, the source region, and the drain region under the dinickel silicide. The dinickel silicide is phase-transformed into nickel silicide by performing a second annealing step.
摘要翻译： 可以提高硅化镍的热稳定性的半导体器件制造方法。 镍（或镍合金）形成在其上形成有栅极区，源极区和漏极区的半导体衬底上。 通过进行第一退火步骤，然后进行选择性蚀刻步骤来形成硅化镍。 通过进行等离子体处理步骤，产生含有氢离子的等离子体，并且将氢离子注入硅化二锡或硅化二锡内的栅极区，源极区和漏极区。 通过进行第二退火步骤，将二锡硅化物相转化成硅化镍。
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公开(公告)号：US08679973B2
公开(公告)日：2014-03-25
申请号：US11870852
申请日：2007-10-11
IPC分类号： H01L21/44
CPC分类号： H01L29/66545 , H01L21/28518 , H01L21/28556 , H01L21/32134 , H01L21/76843 , H01L21/76862 , H01L21/76864 , H01L21/823807 , H01L21/823814 , H01L21/823835 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： The method of manufacturing the semiconductor device comprises forming a transistor including a gate electrode and a source/drain diffused layer over a semiconductor substrate, forming a nickel platinum film over the semiconductor substrate, covering the gate electrode and the source/drain diffused layer, making a first thermal processing to react the nickel platinum film with the source/drain diffused layer to form a nickel platinum silicide film, and removing an unreacted part of the nickel platinum film using a chemical liquid of 71° C. or more containing hydrogen peroxide.
摘要翻译： 制造半导体器件的方法包括在半导体衬底上形成包括栅电极和源极/漏极扩散层的晶体管，在半导体衬底上形成覆盖栅电极和源极/漏极扩散层的镍铂膜， 使镍铂膜与源极/漏极扩散层反应以形成镍铂硅化物膜的第一热处理，以及使用含有过氧化氢的71℃以上的化学液体除去未反应的镍铂膜的部分。
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公开(公告)号：US08536708B2
公开(公告)日：2013-09-17
申请号：US13605020
申请日：2012-09-06
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译： 制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜 的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。
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10.发明授权公开(公告)号：US08338953B2
公开(公告)日：2012-12-25
申请号：US13164180
申请日：2011-06-20
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译： 制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜 的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。
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