公开(公告)号：US4731255A

公开(公告)日：1988-03-15

申请号：US780205

申请日：1985-09-26

申请人： Kazuo Maeda ,  Noboru Tokumasu ,  Toshihiko Fukuyama ,  Tsugiaki Hirata

发明人： Kazuo Maeda ,  Noboru Tokumasu ,  Toshihiko Fukuyama ,  Tsugiaki Hirata

IPC分类号： B05D3/06 ,  B05D7/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C30B25/10 ,  C30B25/14

CPC分类号： C23C16/45504 ,  B05D1/60 ,  C23C16/455 ,  C23C16/482 ,  C23C16/488 ,  C30B25/105 ,  C30B25/14 ,  B05D3/061

摘要： A gas-phase growth process for growing films of uniform thickness or having a prescribed pattern form or growing films sequentially onto a substrate and an apparatus related thereto. The films are grown by allowing an inert gas to flow over a reaction gas flow in parallel to the surface of the substrate. Optionally, the substrate surface could be irradiated by a UV light source which is directed from above the inert gas toward the substrate surface.

摘要翻译： 用于生长均匀厚度的膜或具有规定图案形式的膜或顺序生长膜到基板上的气相生长工艺和与其相关的装置。 通过使惰性气体平行于衬底的表面流过反应气体流而生长膜。 任选地，可以通过从惰性气体上方向衬底表面引导的UV光源照射衬底表面。

公开(公告)号：US4702936A

公开(公告)日：1987-10-27

申请号：US778004

申请日：1985-09-20

申请人： Kazuo Maeda ,  Noboru Tokumasu ,  Toshihiko Fukuyama

发明人： Kazuo Maeda ,  Noboru Tokumasu ,  Toshihiko Fukuyama

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/48 ,  C30B25/02 ,  B05D3/06

CPC分类号： C23C16/482 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C30B25/02

摘要： A gas-phase growth process for forming a film of SiO.sub.2 Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z, which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O.sub.2, N.sub.2 O, NO.sub.2 NO, CO.sub.2 CO and NH.sub.3, with the proviso that the mixture of inorganic silane and O.sub.2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500.degree. C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation. The optional use of a suitable mask allows a film of a prescribed pattern to be formed on the substrate surface.

摘要翻译： 一种用于形成SiO 2 + L，Si 3 N 4或SixO y N z的膜的气相生长方法，其包括将有机或无机硅烷的混合物与一种或多种包含O 2，N 2 O，NO 2 + L，NO，CO 2 + L的反应气体 ，CO和NH 3，条件是排除无机硅烷和O 2的混合物作为本发明的反应气体组合。 该方法包括将反应气体进料到保持在低于500℃的反应温度的反应室中，并将放置在反应室中的基板室的表面进行紫外线照射。 该照射激发反应气体，这允许进行低温气相生长。 光激发仅在UV照射部分选择性地发生，从而在UV照射的范围内，可以在衬底表面上选择性地发生膜生长。 可选地使用合适的掩模允许在基板表面上形成规定图案的膜。

公开(公告)号：US4218291A

公开(公告)日：1980-08-19

申请号：US15896

申请日：1979-02-28

申请人： Toshihiko Fukuyama ,  Shintaro Yanagisawa

发明人： Toshihiko Fukuyama ,  Shintaro Yanagisawa

IPC分类号： C23C14/00 ,  H01L21/28 ,  H01L21/285 ,  C23C15/00

CPC分类号： H01L21/28097 ,  C23C14/0057 ,  H01L21/28518

摘要： In the past a film of a transition metal silicide or an aluminum silicon alloy has been deposited on a semiconductor substrate by vacuum evaporation and used as an electrode or wiring of a semiconductor device. According to the present invention, the film is produced by a sputtering method wherein the silicon component of the film is not supplied from the target but from a gaseous silicon compound contained in the sputtering atmosphere.

摘要翻译： 过去金属硅化物或铝硅合金膜已经通过真空蒸发沉积在半导体衬底上，并被用作半导体器件的电极或布线。 根据本发明，通过溅射法制造薄膜，其中薄膜的硅组分不是从目标物提供，而是从包含在溅射气氛中的气态硅化合物提供。