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23 条记录 (耗时 0.018 秒)

    Gas-phase growth process
    2.
    发明授权
    Gas-phase growth process 失效
    气相生长过程

    公开(公告)号：US4702936A

    公开(公告)日：1987-10-27

    申请号：US778004

    申请日：1985-09-20

    申请人： Kazuo Maeda ,  Noboru Tokumasu ,  Toshihiko Fukuyama

    发明人： Kazuo Maeda ,  Noboru Tokumasu ,  Toshihiko Fukuyama

    IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/48 ,  C30B25/02 ,  B05D3/06

    CPC分类号： C23C16/482 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C30B25/02

    摘要： A gas-phase growth process for forming a film of SiO.sub.2 Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z, which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O.sub.2, N.sub.2 O, NO.sub.2 NO, CO.sub.2 CO and NH.sub.3, with the proviso that the mixture of inorganic silane and O.sub.2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500.degree. C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation. The optional use of a suitable mask allows a film of a prescribed pattern to be formed on the substrate surface.

    摘要翻译： 一种用于形成SiO 2 + L，Si 3 N 4或SixO y N z的膜的气相生长方法，其包括将有机或无机硅烷的混合物与一种或多种包含O 2，N 2 O，NO 2 + L，NO，CO 2 + L的反应气体 ，CO和NH 3，条件是排除无机硅烷和O 2的混合物作为本发明的反应气体组合。 该方法包括将反应气体进料到保持在低于500℃的反应温度的反应室中，并将放置在反应室中的基板室的表面进行紫外线照射。 该照射激发反应气体，这允许进行低温气相生长。 光激发仅在UV照射部分选择性地发生，从而在UV照射的范围内，可以在衬底表面上选择性地发生膜生长。 可选地使用合适的掩模允许在基板表面上形成规定图案的膜。

    Plasma processing equipment and gas discharging device
    3.
    发明授权
    Plasma processing equipment and gas discharging device 失效
    等离子体处理设备和排气装置

    公开(公告)号：US5834730A

    公开(公告)日：1998-11-10

    申请号：US792138

    申请日：1997-01-31

    申请人： Setsu Suzuki ,  Noboru Tokumasu ,  Kazuo Maeda ,  Junichi Aoki

    发明人： Setsu Suzuki ,  Noboru Tokumasu ,  Kazuo Maeda ,  Junichi Aoki

    IPC分类号： H01J37/32 ,  B23K10/00

    CPC分类号： H01J37/32009 ,  H01J37/32082

    摘要： A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.

    摘要翻译： 提供一种气体放电装置，其具有用于使反应气体质量化的相对电极之一的功能，并且利用等离子体气体执行成膜和蚀刻。 该装置包括在其中心部分具有凹部的基体和用于将气体引入凹部的通孔，设置在凹部中的用于沿径向引入气体的气体分配板，以及环形气体 用于排出由气体分配板引入的气体的排出构件。

    Film forming method and semiconductor device manufacturing method
    6.
    发明授权
    Film forming method and semiconductor device manufacturing method 失效
    成膜方法和半导体器件的制造方法

    公开(公告)号：US6110814A

    公开(公告)日：2000-08-29

    申请号：US330052

    申请日：1999-06-11

    申请人： Noboru Tokumasu ,  Kazuo Maeda

    发明人： Noboru Tokumasu ,  Kazuo Maeda

    IPC分类号： H01L21/31 ,  C23C16/40 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/76819 ,  C23C16/401 ,  C23C16/56 ,  H01L21/31051

    摘要： The present invention relates to a film forming method for forming a planarized interlayer insulating film to cover wiring layers, etc. of a semiconductor integrated circuit device. The method includes the steps of forming on a substrate 206, a phosphorus-containing insulating film 45a containing P.sub.2 O.sub.3 by using a film forming gas in which an oxidizing. gas is added into a gas mixture including a phosphorus-containing compound, which has III valence phosphorus and in which oxygen is bonded to at least one bond of the III valence phosphorus, and silicon-containing compound, or by using the film forming gas from which the oxidizing gas removed, heating the phosphorus-containing insulating film 45a while applying acceleration to the insulating film 45a to fluidize the insulating film and thus planarize a surface of the insulating film 45b while the insulating film 45a has a predetermined viscosity, and heating further the insulating film 45b after the surface of the insulating film 45b has been planarized, to sublimate P.sub.2 O.sub.3 in the insulating film 45b and thus solidify the insulating film 45b.

    摘要翻译： 本发明涉及一种用于形成半导体集成电路器件的布线层等的平坦化层间绝缘膜的成膜方法。 该方法包括以下步骤：通过使用其中进行氧化的成膜气体，在基板206上形成含有P 2 O 3的含磷绝缘膜45a。 将气体加入到含有III价态的磷的含磷化合物的气体混合物中，其中氧与III价态的磷的至少一个键结合，并且含硅化合物，或者通过使用成膜气体从 除去氧化气体，同时加热含磷绝缘膜45a，同时对绝缘膜45a施加加速度，使绝缘膜流化，从而使绝缘膜45b的表面平坦化，同时绝缘膜45a具有预定的粘度，并进一步加热 绝缘膜45b的表面之后的绝缘膜45b被平坦化，以使绝缘膜45b中的P2O3升华，从而固化绝缘膜45b。

    Film forming method and semiconductor device manufacturing method
    7.
    发明授权
    Film forming method and semiconductor device manufacturing method 失效
    成膜方法和半导体器件的制造方法

    公开(公告)号：US5915200A

    公开(公告)日：1999-06-22

    申请号：US842425

    申请日：1997-04-24

    申请人： Noboru Tokumasu ,  Kazuo Maeda

    发明人： Noboru Tokumasu ,  Kazuo Maeda

    IPC分类号： H01L21/768 ,  C23C16/40 ,  H01L21/316 ,  H01L23/522 ,  H01L21/443

    CPC分类号： H01L21/02129 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31625

    摘要： A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P.sub.2 O.sub.3 is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.

    摘要翻译： 提供一种成膜方法，用于形成用于覆盖半导体集成电路器件的互连层等的平面化层间绝缘膜。 在将含有III价磷和至少一个磷键的含磷化合物的反应气体供给到氧的同时，在沉积基板上形成包含P 2 O 3的含硅绝缘膜，从而大大降低了用于平坦化的流化温度。

    Film formation method and manufacturing method of semiconductor device
    10.
    发明授权
    Film formation method and manufacturing method of semiconductor device 失效
    半导体器件的成膜方法及其制造方法

    公开(公告)号：US06221755B1

    公开(公告)日：2001-04-24

    申请号：US09358399

    申请日：1999-07-22

    申请人： Noboru Tokumasu ,  Kazuo Maeda

    发明人： Noboru Tokumasu ,  Kazuo Maeda

    IPC分类号： H01L214763

    CPC分类号： H01L21/02129 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31625

    摘要： Disclosed is a film formation method of an interlayer insulating film which is flattened to cover a wiring layer of a semiconductor integrated circuit device, in which a film-forming gas is activated by converting the film-forming gas into a plasma, the film-forming gas being composed of either a mixed gas containing a phosphorus-containing compound containing trivalent phosphorus, which takes a Si—O—P structure, and a silicon-containing compound containing at most one oxygen atom or an additional mixed gas prepared by adding an oxidative gas to said mixed gas; and a silicon-containing insulating film containing P2O5 is formed on a substrate.

    摘要翻译： 公开了一种层间绝缘膜的成膜方法，该层间绝缘膜被平坦化以覆盖半导体集成电路器件的布线层，其中成膜气体通过将成膜气体转化成等离子体来激活成膜气体，成膜 气体由含有含有三价磷的含磷化合物的混合气体构成，其具有Si-OP结构，以及含有至多一个氧原子的含硅化合物或通过将氧化性气体加成而制备的附加混合气体 说混合气 并且在基板上形成含有P 2 O 5的含硅绝缘膜。