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公开(公告)号：US20090110643A1
公开(公告)日：2009-04-30
申请号：US11920836
申请日：2005-05-23
CPC分类号： A61K49/223 , A61K9/127 , A61K41/0028 , A61K47/6911 , A61K48/0008
摘要： Gas-filled liposomes that are useful for ultrasonography and ultrasound therapy are provided. A method of producing the gas-filled liposomes, including filling the void space in a sealed container containing a liposome suspension in a volume amounting to 20 to 80% of the inner capacity thereof with a fluoride gas or a nitrogen gas, and subjecting the container to an ultrasonication.
摘要翻译： 提供了可用于超声和超声治疗的充气脂质体。 一种制造气体充填脂质体的方法，包括用含有氟化物气体或氮气的容积为20〜80％体积的含有脂质体悬浮液的密闭容器填充空隙，并对容器 超声波。
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公开(公告)号：US20090214629A1
公开(公告)日：2009-08-27
申请号：US11915474
申请日：2005-05-26
IPC分类号： A61K9/127 , C12N15/87 , A61K31/7088
CPC分类号： C12N15/88 , A61K9/0009 , A61K9/127 , A61K9/1272 , A61K41/0028 , A61K47/42 , A61K48/00 , A61K48/0008 , A61N7/00
摘要： A method for efficiently transferring a gene to a target cell is provided. A method of transferring a gene to a target cell, including adding or administering a positively charged complex (A) composed of the gene and a cationic substance and gas-filled microparticles (B) to a target cell-containing composition or a living body and then exposing the target cell-containing composition or the living body to a low-frequency ultrasound.
摘要翻译： 提供了将基因有效转移到靶细胞的方法。 将基因转移到靶细胞的方法，包括将由该基因构成的带正电荷的复合物（A）和阳离子性物质和充气微粒（B）添加或给予含靶细胞的组合物或活体， 然后将含靶细胞的组合物或活体暴露于低频超声波。
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公开(公告)号：US06611063B1
公开(公告)日：2003-08-26
申请号：US09664061
申请日：2000-09-18
IPC分类号： H01L2348
CPC分类号： H01L21/4832 , H01L21/563 , H01L21/568 , H01L23/3107 , H01L23/3128 , H01L23/4951 , H01L23/49575 , H01L23/49816 , H01L24/45 , H01L24/48 , H01L24/97 , H01L2221/68377 , H01L2224/05568 , H01L2224/05573 , H01L2224/16237 , H01L2224/32225 , H01L2224/451 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73203 , H01L2224/73265 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/15151 , H01L2924/15183 , H01L2924/15184 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2224/85 , H01L2924/00 , H01L2224/83 , H01L2224/45099 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： A method for forming a mold-encapsulated semiconductor device includes the steps of mounting a semiconductor chip on a metallic plate having a metallic interconnect pattern thereon, encapsulating the semiconductor chip on the metallic interconnect pattern, removing the bottom of the metallic plate by etching to expose the metallic interconnect pattern, and forming external terminals on the bottom of the metallic interconnect pattern. The method reduces the thickness as well as the planar dimensions of the semiconductor device.
摘要翻译： 一种用于形成模制封装的半导体器件的方法包括以下步骤：将半导体芯片安装在其上具有金属互连图案的金属板上，将半导体芯片封装在金属互连图案上，通过蚀刻去除金属板的底部以暴露 金属互连图案，并且在金属互连图案的底部上形成外部端子。 该方法减小了半导体器件的厚度以及平面尺寸。
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公开(公告)号：US06504244B2
公开(公告)日：2003-01-07
申请号：US09773341
申请日：2001-01-31
IPC分类号： H01L2334
CPC分类号： H01L23/4985 , H01L25/0652 , H01L2224/051 , H01L2224/05569 , H01L2224/05573 , H01L2224/05647 , H01L2224/16145 , H01L2924/00014
摘要： A semiconductor device of the present invention is made up of a semiconductor chip and a single wiring tape resembling a film carrier and including a wiring layer that has a preselected pattern. The wiring tape is adhered to at least the top, bottom and one side of a semiconductor chip. The semiconductor device has outer connecting portions arranged on the above surface of the chip. The semiconductor device is comparable in package size with a bare chip. A semiconductor module having a plurality of such semiconductor devices arranged bidimensionally or tridimensionally achieves desirable electric characteristics while obviating the dense arrangement of a number of wirings.
摘要翻译： 本发明的半导体器件由半导体芯片和类似于薄膜载体的单个布线带构成，并且包括具有预选图案的布线层。 布线带至少粘附到半导体芯片的顶部，底部和一侧。 半导体器件具有布置在芯片的上表面上的外部连接部分。 半导体器件的封装尺寸与裸芯片相当。 具有多个这样的半导体器件的半导体模块，其二维地或三维地布置地实现期望的电特性，同时避免了多个布线的密集布置。
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5.发明授权Semiconductor device with increased connection strength between solder balls and wiring layer 失效具有增加焊球和布线层之间的连接强度的半导体器件公开(公告)号：US06486553B1
公开(公告)日：2002-11-26
申请号：US09521680
申请日：2000-03-09
申请人： Tomoko Takizawa , Masanori Takeuchi
发明人： Tomoko Takizawa , Masanori Takeuchi
IPC分类号： H01L2348
CPC分类号： H01L24/02 , H01L24/13 , H01L2224/0401 , H01L2224/13099 , H01L2224/16 , H01L2224/73253 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/0101 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01L2924/15311 , H01L2924/16195 , H01L2924/19043 , H05K3/244 , H01L2924/00
摘要： There is provided a semiconductor device including (a) a semiconductor chip, (b) a wiring making. electrical connection with the semiconductor chip and containing copper (Cu) therein, (c) a solder ball making contact with the wiring and containing tin (Sn) therein, and (d) a layer made of copper-tin (Cu—Sn) alloy, sandwiched between the wiring and the solder ball, and having a thickness equal to or greater than about 1.87 micrometers. The copper-tin alloy layer strengthens connection between the wiring and the solder ball, and hence, ensures reduction in occurrence of breakage and/or cracking in the wiring and the solder ball. As a result, it would be possible to avoid the solder ball from being separated from the wiring due to the breakage and cracking. Accordingly, a fabrication yield of the semiconductor device can be enhanced.
摘要翻译： 提供了包括（a）半导体芯片，（b）布线制造的半导体器件。 与该半导体芯片电连接并含有铜（Cu），（c）与该布线接触并在其中含有锡（Sn）的焊球，以及（d）由铜 - 锡（Cu-Sn）合金 夹在布线和焊球之间，并具有等于或大于约1.87微米的厚度。 铜 - 锡合金层增强了布线和焊球之间的连接，从而确保了布线和焊球中的断裂和/或开裂的发生。 结果，可以避免由于断裂和开裂而使焊球与布线分离。 因此，可以提高半导体器件的制造成品率。
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