摘要:
There are provided a porous plate dielectric substance, pillar-shaped electrodes respectively formed in pores belonging to a first group and pores belonging to a second group alternately arranged on the dielectric substance, insulator layers made of an organic insulator formed on tips of pillar-shaped electrodes in the pores of the first and second groups so as to fill the pores and hide electrodes respectively provided on one principal surface and another principal surface of the dielectric substance and connected to base ends of the pillar-shaped electrodes.
摘要:
A method of manufacturing a capacitor includes: anodizing a metal substrate in two stages by applying two different voltage so as to make first and second holes having different pitches, distributed randomly in an oxide substance; filling the first and second holes with an electrode material, respectively, to form first and second electrodes; connecting the first electrodes to a conductive layer formed on one surface of the oxide substance; and connecting the second electrodes to another conductive layer formed on another surface of the oxide substance.
摘要:
A capacitor includes a pair of electrically conductive layers; a plurality of substantially or nearly tubular dielectric materials disposed between the pair of electrically conductive layers formed of anodic oxide of metal; first electrodes which are filled in hollow portions of the dielectric materials and connected to one of the electrically conductive layers; and a second electrode that is filled in voids between the respective dielectric materials and connected to the other electrically conductive layer.
摘要:
A capacitor element includes a pair of conductive layer, a plurality of first electrodes and second electrodes, and insulation caps for insulating these electrodes from the conductive layers. By anodizing a metal substrate in two stages, holes filled with the first electrodes and holes filled with the second electrodes are randomly distributed.
摘要:
A capacitor element includes a pair of conductor layers, a plurality of generally tube-shaped dielectric substances, a first electrode outside the dielectric substances and second electrodes in the insides thereof, and insulation caps for insulating the first electrode from the conductor layer, wherein an electrode material is filled in gaps of a structure of an oxide base material resulting from anodic oxidation of a metal, and then, the structure is removed and replaced by a high permittivity material.
摘要:
A capacitor element includes a pair of conductor layers, a plurality of generally tube-shaped dielectric substances, a first electrode outside the dielectric substances and second electrodes in the insides thereof, and insulation caps for insulating the first electrode from the conductor layer, wherein an electrode material is filled in gaps of a structure of an oxide base material resulting from anodic oxidation of a metal, and then, the structure is removed and replaced by a high permittivity material.
摘要:
A capacitor forming unit according to one embodiment includes a dielectric plate with a plurality of through holes; a first conductor film formed on an upper surface of the dielectric plate; a first insulator film formed on the front end portion of the upper surface of the dielectric plate; a second conductor film formed on a lower surface of the dielectric plate; a second insulator film formed on the rear end portion of the lower surface of the dielectric plate; first electrode rods disposed in some of the through holes; and second electrode rods disposed in the remaining through holes where the first electrode rods are not disposed. The first electrodes are electrically connected to the first conductor film and electrically insulated from the second conductor film. The second electrode rods are electrically connected to the second conductor film and are electrically insulated from the first conductor film.
摘要:
A capacitor forming unit includes a dielectric plate, a first conductor film formed on a plate upper surface region other than front and rear end portions, a first insulator film formed on the upper surface front end portion, a second insulator film formed on the upper surface rear end portion, a second conductor film formed on a plate lower surface region other than front and rear end portion, a third insulator film formed on the front end portion lower surface, and a fourth insulator film formed on the lower surface rear end portion. One or more first electrode rods are disposed in through holes, and electrically connected to the first conductor film and electrically insulated from the second conductor film. One or more second electrode rods are disposed in other through holes, and electrically connected to the second conductor film and electrically insulated from the first conductor film.
摘要:
The invention provides an electronic device having a structure operable by the power of a battery pack. The electronic device includes: an authenticating section that authenticates a battery pack connected so as to supply power to determine whether the battery pack is a genuine product; a user interface; and a controller for controlling the electronic device. The controller tries authentication of the battery pack connected so as to supply power with the authentication section. When the battery pack has been authenticated, the discharging of the battery pack is enabled. When the battery pack has not been authenticated, the controller requests the user to input recognition whether the battery pack is a genuine product through the user interface, and changes the control for the battery pack between when the user inputs, in response to the request, the recognition that the battery pack is a genuine product and when the user inputs the recognition that the battery pack is not a genuine product.
摘要:
A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr1-xCaxMnO3, that has been formed at a film forming temperature from 350° C. to 500° C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.
摘要翻译:通过依次层叠下电极,可变电阻器和上电极来形成非易失性存储元件。 形成结晶性和非晶态混合的可变电阻器。 因此,形成非易失性存储元件。 更优选地,可变电阻器是由通式为Pr 1-x M x MnO 3 N 3表示的镨 - 钙 - 锰氧化物, 在350℃至500℃的成膜温度下形成的可变电阻器。或者,可变电阻器以允许可变电阻器变为非晶态的成膜温度或结晶度的状态形成为膜 并且将非晶化混合,然后在可变电阻器可以保持结晶性和非晶态混合的状态的温度范围内,在高于成膜温度的温度下进行退火处理。