公开(公告)号：US06404694B2

公开(公告)日：2002-06-11

申请号：US09826004

申请日：2001-04-05

申请人： Kazushige Ayukawa ,  Takao Watanabe ,  Susumu Narita

发明人： Kazushige Ayukawa ,  Takao Watanabe ,  Susumu Narita

IPC分类号： G11C800

CPC分类号： G11C8/12 ,  G11C8/00

摘要： A memory macro is a combination of functional modules such as a main amplifier module, memory bank modules of which each memory bank operates independently, a power source circuit, etc. The storage capacity of the memory macro can be easily changed from a large capacity to a small one by changing the number of the memory bank modules. A control circuit in the memory bank modules of the memory macro has an additional address comparing function. Therefore, the same page can be accessed at high speed without providing any control circuit outside the memory macro. In addition, a module having a function such as a memory access sequence control is provided and, when memory access is made, identification information is issued at the time of inputting/outputting address or data. Therefore, high-speed memory access can be realized by checking the coincidence between the data and address with the ID and controlling the memory access sequence so that the address inputting order and data outputting order can be changed.

摘要翻译： 存储器宏是诸如主放大器模块，每个存储器组独立的存储体模块，电源电路等功能模块的组合。存储器宏的存储容量可以容易地从大容量改变为 通过改变存储体模块的数量来实现。 存储器宏的存储体模块中的控制电路具有附加地址比较功能。 因此，可以高速访问同一页面，而无需在存储器宏之外提供任何控制电路。 此外，提供具有诸如存储器访问顺序控制的功能的模块，并且当进行存储器访问时，在输入/输出地址或数据时发出识别信息。 因此，可以通过使用ID检查数据和地址之间的一致性并控制存储器访问顺序来实现高速存储器访问，从而可以改变地址输入顺序和数据输出顺序。

公开(公告)号：US06229752B1

公开(公告)日：2001-05-08

申请号：US09367544

申请日：1999-08-16

申请人： Kazushige Ayukawa ,  Takao Watanabe ,  Susumu Narita

发明人： Kazushige Ayukawa ,  Takao Watanabe ,  Susumu Narita

IPC分类号： G11C800

CPC分类号： G06F12/0215 ,  G06F13/1631 ,  G11C7/1072 ,  G11C8/12 ,  G11C11/005

摘要： A memory macro is a combination of functional modules such as a main amplifier module, memory bank modules of which each memory bank operates independently, a power source circuit, etc. The storage capacity of the memory macro can be easily changed from a large capacity to a small one by changing the number of the memory bank modules. A control circuit in the memory bank modules of the memory macro has an additional address comparing function. Therefore, the same page can be accessed at high speed without providing any control circuit outside the memory macro. In addition, a module having a function such as a memory access sequence control is provided and, when memory access is made, identification information is issued at the time of inputting/outputting address or data. Therefore, high-speed memory access can be realized by checking the coincidence between the data and address with the ID and controlling the memory access sequence so that the address inputting order and data outputting order can be changed.

公开(公告)号：US06584033B2

公开(公告)日：2003-06-24

申请号：US10128254

申请日：2002-04-24

申请人： Kazushige Ayukawa ,  Takao Watanabe ,  Susumu Narita

发明人： Kazushige Ayukawa ,  Takao Watanabe ,  Susumu Narita

IPC分类号： G11C800

CPC分类号： G11C8/12 ,  G11C8/00

摘要： A memory macro is a combination of functional modules such as a main amplifier module, memory bank modules of which each memory bank operates independently, a power source circuit, etc. The storage capacity of the memory macro can be easily changed from a large capacity to a small one by changing the number of the memory bank modules. A control circuit in the memory bank modules of the memory macro has an additional address comparing function. Therefore, the same page can be accessed at high speed without providing any control circuit outside the memory macro. In addition, a module having a function such as a memory access sequence control is provided and, when memory access is made, identification information is issued at the time of inputting/outputting address or data. Therefore, high-speed memory access can be realized by checking the coincidence between the data and address with the ID and controlling the memory access sequence so that the address inputting order and data outputting order can be changed.

摘要翻译： 存储器宏是诸如主放大器模块，每个存储器组独立的存储体模块，电源电路等功能模块的组合。存储器宏的存储容量可以容易地从大容量改变为 通过改变存储体模块的数量来实现。 存储器宏的存储体模块中的控制电路具有附加地址比较功能。 因此，可以高速访问同一页面，而无需在存储器宏之外提供任何控制电路。 此外，提供具有诸如存储器访问顺序控制的功能的模块，并且当进行存储器访问时，在输入/输出地址或数据时发出识别信息。 因此，可以通过使用ID检查数据和地址之间的一致性并控制存储器访问顺序来实现高速存储器访问，从而可以改变地址输入顺序和数据输出顺序。

公开(公告)号：US06195294B1

公开(公告)日：2001-02-27

申请号：US09614759

申请日：2000-07-11

申请人： Kazushige Ayukawa ,  Takao Watanabe ,  Yoshinobu Nakagome

发明人： Kazushige Ayukawa ,  Takao Watanabe ,  Yoshinobu Nakagome

IPC分类号： G11C700

CPC分类号： G11C7/1006 ,  G11C7/10 ,  G11C8/16

摘要： A semiconductor device integrated on a chip includes a memory cell array, multiple processing elements and multiple data transfer circuits which transfer data between memory cells and the processing elements over read paths and write paths provided separately. The divide is capable of transferring data from memory cells to the processing elements and from the processing elements to memory cells concurrently over the read paths and write paths, respectively, so that faster image data processing is accomplished, and also capable of processing data on once-activated word lines successively thereby to reduce the number of times of driving of each word line so that the power consumption is reduced.

公开(公告)号：US6097663A

公开(公告)日：2000-08-01

申请号：US413641

申请日：1999-10-06

申请人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

发明人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

IPC分类号： G06F17/50 ,  G11C7/00 ,  G11C7/02 ,  G11C7/10 ,  G11C8/12 ,  H01L27/108 ,  G11C8/00

CPC分类号： G11C7/02 ,  G11C7/10 ,  G11C7/1006 ,  G11C7/1042 ,  G11C7/1072 ,  H01L27/10897

摘要： A semiconductor IC device is designed using a memory core with a plurality of I/O lines, a transfer circuit module and a logic library which are produced beforehand and stored in a data base. The memory core and a logic circuit are arranged so that their I/O lines extend in the same direction. A transfer circuit including plural stages of switch groups is arranged between the I/O lines of the memory core and the I/O lines of the logic circuit. Switches forming each stage of switch group are formed between the I/O lines of the memory core and the I/O lines of the logic circuit. When one stage of or a small number of stages of switch groups are turned on, the I/O lines of the memory core and the I/O lines of the logic circuit are turned on, thereby forming a desired transfer pattern. The memory core is constructed by the combination of functional modules such as an amplifier module, a bank module and a power supply module. In the bank module are arranged row-system circuits which operate independently of each other and a multiplicity of I/O lines which extend in a bit line direction.

公开(公告)号：US07254680B2

公开(公告)日：2007-08-07

申请号：US11641808

申请日：2006-12-20

申请人： Kazushige Ayukawa ,  Seiji Miura ,  Jun Satoh ,  Takao Watanabe ,  Kazumasa Yanagisawa ,  Yusuke Kanno ,  Hiroyuki Mizuno

发明人： Kazushige Ayukawa ,  Seiji Miura ,  Jun Satoh ,  Takao Watanabe ,  Kazumasa Yanagisawa ,  Yusuke Kanno ,  Hiroyuki Mizuno

IPC分类号： G06F12/00 ,  G11C7/00

CPC分类号： G11C7/1006 ,  G06F12/0215 ,  G06F12/0893 ,  G06F13/161 ,  G06F2212/3042 ,  G11C7/065 ,  G11C11/4091 ,  G11C11/4093 ,  G11C2207/104 ,  G11C2207/2245

摘要： To enhance the speed of first access (read access different in word line from the previous access) to a multi-bank memory, multi-bank memory macro structures are used. Data are held in a sense amplifier for every memory bank. When access is hit to the held data, data latched by the sense amplifier are output to thereby enhance the speed of first access to the memory macro structures. Namely, each memory bank is made to function as a sense amplifier cache. To enhance the hit ratio of such a sense amplifier cache more greatly, an access controller self-prefetches the next address (an address to which a predetermined offset has been added) after access to a memory macro structure so that data in the self-prefetched address are preread by a sense amplifier in another memory bank.

摘要翻译： 为了提高第一次访问的速度（从先前访问的字线读取访问）到多存储体存储器，使用多存储体存储器宏结构。 数据保存在每个存储体的读出放大器中。 当对保持的数据进行访问时，输出由读出放大器锁存的数据，从而提高对存储器宏结构的首次访问的速度。 即，使每个存储体用作读出放大器高速缓存。 为了更好地提高这种感测放大器高速缓存的命中率，访问控制器在访问存储器宏结构之后自我预取下一个地址（已经添加了预定偏移量的地址），以便自我预取中的数据 地址由另一个存储体中的读出放大器预读。

公开(公告)号：US06381671B1

公开(公告)日：2002-04-30

申请号：US09342240

申请日：1999-06-29

申请人： Kazushige Ayukawa ,  Seiji Miura ,  Jun Satoh ,  Takao Watanabe ,  Kazumasa Yanagisawa ,  Yusuke Kanno ,  Hiroyuki Mizuno

发明人： Kazushige Ayukawa ,  Seiji Miura ,  Jun Satoh ,  Takao Watanabe ,  Kazumasa Yanagisawa ,  Yusuke Kanno ,  Hiroyuki Mizuno

IPC分类号： G06F1200

CPC分类号： G11C7/1006 ,  G06F12/0215 ,  G06F12/0893 ,  G06F13/161 ,  G06F2212/3042 ,  G11C7/065 ,  G11C11/4091 ,  G11C11/4093 ,  G11C2207/104 ,  G11C2207/2245

摘要： To enhance the speed of first access (read access different in word line from the previous access) to a multi-bank memory, multi-bank memory macro structures are used. Data are held in a sense amplifier for every memory bank. When access is hit to the held data, data latched by the sense amplifier are output to thereby enhance the speed of first access to the memory macro structures. Namely, each memory bank is made to function as a sense amplifier cache. To enhance the hit ratio of such a sense amplifier cache more greatly, an access controller self-prefetches the next address (an address to which a predetermined offset has been added) after access to a memory macro structure so that data in the self-prefetched address are preread by a sense amplifier in another memory bank.

摘要翻译： 为了提高第一次访问的速度（从先前访问的字线读取访问）到多存储体存储器，使用多存储体存储器宏结构。 数据保存在每个存储体的读出放大器中。 当对保持的数据进行访问时，输出由读出放大器锁存的数据，从而提高对存储器宏结构的首次访问的速度。 即，使每个存储体用作读出放大器高速缓存。 为了更好地提高这种感测放大器高速缓存的命中率，访问控制器在访问存储器宏结构之后自我预取下一个地址（已经添加了预定偏移量的地址），以便自我预取中的数据 地址由另一个存储体中的读出放大器预读。

公开(公告)号：US06335898B2

公开(公告)日：2002-01-01

申请号：US09808943

申请日：2001-03-16

申请人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

发明人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

IPC分类号： G11C800

CPC分类号： G11C7/02 ,  G11C7/10 ,  G11C7/1006 ,  G11C7/1042 ,  G11C7/1072 ,  H01L27/10897

摘要： A semiconductor IC device is designed using a memory core with a plurality of I/O lines, a transfer circuit module and a logic library which are produced beforehand and stored in a data base. The memory core and a logic circuit are arranged so that their I/O lines extend in the same direction. A transfer circuit including plural stages of switch groups is arranged between the I/O lines of the memory core and the I/O lines of the logic circuit. Switches forming each stage of switch group are formed between the I/O lines of the memory core and the I/O lines of the logic circuit. When one stage of or a small number of stages of switch groups are turned on, the I/O lines of the memory core and the I/O lines of the logic circuit are turned on, thereby forming a desired transfer pattern. The memory core is constructed by the combination of functional modules such as an amplifier module, a bank module and a power supply module. In the bank module are arranged row-system circuits which operate independently of each other and a multiplicity of I/O lines which extend in a bit line direction.

公开(公告)号：US06314044B1

公开(公告)日：2001-11-06

申请号：US09594840

申请日：2000-06-15

申请人： Toshio Sasaki ,  Yuji Tanaka ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka ,  Jun Sato ,  Takashi Miyamoto ,  Mariko Ohtsuka ,  Satoru Nakanishi ,  Kazushige Ayukawa ,  Takao Watanabe

发明人： Toshio Sasaki ,  Yuji Tanaka ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka ,  Jun Sato ,  Takashi Miyamoto ,  Mariko Ohtsuka ,  Satoru Nakanishi ,  Kazushige Ayukawa ,  Takao Watanabe

IPC分类号： G11C800

CPC分类号： G11C8/12

摘要： A RAM mounted so as to mix with logic circuits has a plurality of memory mats and one control circuit provided for the plurality of memory mats. Arithmetic circuits for respectively performing +1 or −1 arithmetic operation are respectively provided so as to correspond to the respective memory mats and are electrically connected in cascade form. An input terminal of the initial-stage arithmetic circuit is supplied with address-setting fixed address signals. Input signals supplied to the next and subsequent arithmetic circuits or signals outputted therefrom are defined as own-assigned address signals (those assigned to the corresponding memory mats). A comparator provided in association with each arithmetic circuit referred to above makes comparisons for coincidence between the address signals and address signals input upon memory access. The corresponding memory mat is selected based on the resultant coincidence signal.

摘要翻译： 安装成与逻辑电路混合的RAM具有多个存储器垫和为多个存储器垫提供的一个控制电路。 分别提供用于分别执行+1或-1运算的算术电路，以对应于相应的存储器垫并且以级联形式电连接。 初始级算术电路的输入端被提供地址设定固定地址信号。 提供给下一个和后续运算电路的输入信号或从其输出的信号被定义为自己分配的地址信号（分配给相应的存储器垫的那些）。 与上述每个运算电路相关联地提供的比较器比较了存储器访问时输入的地址信号和地址信号之间的一致性。 基于所得到的一致信号来选择相应的存储器垫。

公开(公告)号：US20070101088A1

公开(公告)日：2007-05-03

申请号：US11641808

申请日：2006-12-20

申请人： Kazushige Ayukawa ,  Seiji Miura ,  Jun Satoh ,  Takao Watanabe ,  Kazumasa Yanagisawa ,  Yusuke Kanno ,  Hiroyuki Mizuno

发明人： Kazushige Ayukawa ,  Seiji Miura ,  Jun Satoh ,  Takao Watanabe ,  Kazumasa Yanagisawa ,  Yusuke Kanno ,  Hiroyuki Mizuno

IPC分类号： G06F13/00

CPC分类号： G11C7/1006 ,  G06F12/0215 ,  G06F12/0893 ,  G06F13/161 ,  G06F2212/3042 ,  G11C7/065 ,  G11C11/4091 ,  G11C11/4093 ,  G11C2207/104 ,  G11C2207/2245

摘要： To enhance the speed of first access (read access different in word line from the previous access) to a multi-bank memory, multi-bank memory macro structures are used. Data are held in a sense amplifier for every memory bank. When access is hit to the held data, data latched by the sense amplifier are output to thereby enhance the speed of first access to the memory macro structures. Namely, each memory bank is made to function as a sense amplifier cache. To enhance the hit ratio of such a sense amplifier cache more greatly, an access controller self-prefetches the next address (an address to which a predetermined offset has been added) after access to a memory macro structure so that data in the self-prefetched address are preread by a sense amplifier in another memory bank.

摘要翻译： 为了提高第一次访问的速度（从先前访问的字线读取访问）到多存储体存储器，使用多存储体存储器宏结构。 数据保存在每个存储体的读出放大器中。 当对保持的数据进行访问时，输出由读出放大器锁存的数据，从而提高对存储器宏结构的首次访问的速度。 即，使每个存储体用作读出放大器高速缓存。 为了更好地提高这种感测放大器高速缓存的命中率，访问控制器在访问存储器宏结构之后自我预取下一个地址（已经添加了预定偏移量的地址），以便自我预取中的数据 地址由另一个存储体中的读出放大器预读。