公开(公告)号：US06314044B1

公开(公告)日：2001-11-06

申请号：US09594840

申请日：2000-06-15

申请人： Toshio Sasaki ,  Yuji Tanaka ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka ,  Jun Sato ,  Takashi Miyamoto ,  Mariko Ohtsuka ,  Satoru Nakanishi ,  Kazushige Ayukawa ,  Takao Watanabe

发明人： Toshio Sasaki ,  Yuji Tanaka ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka ,  Jun Sato ,  Takashi Miyamoto ,  Mariko Ohtsuka ,  Satoru Nakanishi ,  Kazushige Ayukawa ,  Takao Watanabe

IPC分类号： G11C800

CPC分类号： G11C8/12

摘要： A RAM mounted so as to mix with logic circuits has a plurality of memory mats and one control circuit provided for the plurality of memory mats. Arithmetic circuits for respectively performing +1 or −1 arithmetic operation are respectively provided so as to correspond to the respective memory mats and are electrically connected in cascade form. An input terminal of the initial-stage arithmetic circuit is supplied with address-setting fixed address signals. Input signals supplied to the next and subsequent arithmetic circuits or signals outputted therefrom are defined as own-assigned address signals (those assigned to the corresponding memory mats). A comparator provided in association with each arithmetic circuit referred to above makes comparisons for coincidence between the address signals and address signals input upon memory access. The corresponding memory mat is selected based on the resultant coincidence signal.

摘要翻译： 安装成与逻辑电路混合的RAM具有多个存储器垫和为多个存储器垫提供的一个控制电路。 分别提供用于分别执行+1或-1运算的算术电路，以对应于相应的存储器垫并且以级联形式电连接。 初始级算术电路的输入端被提供地址设定固定地址信号。 提供给下一个和后续运算电路的输入信号或从其输出的信号被定义为自己分配的地址信号（分配给相应的存储器垫的那些）。 与上述每个运算电路相关联地提供的比较器比较了存储器访问时输入的地址信号和地址信号之间的一致性。 基于所得到的一致信号来选择相应的存储器垫。

公开(公告)号：US5978305A

公开(公告)日：1999-11-02

申请号：US165194

申请日：1998-10-02

申请人： Toshio Sasaki ,  Yuji Tanaka ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka ,  Jun Sato ,  Takashi Miyamoto ,  Mariko Ohtsuka ,  Satoru Nakanishi ,  Kazushige Ayukawa ,  Takao Watanabe

发明人： Toshio Sasaki ,  Yuji Tanaka ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka ,  Jun Sato ,  Takashi Miyamoto ,  Mariko Ohtsuka ,  Satoru Nakanishi ,  Kazushige Ayukawa ,  Takao Watanabe

IPC分类号： G11C11/401 ,  G11C8/00 ,  G11C8/12 ,  G11C11/407 ,  G11C7/00

CPC分类号： G11C8/12

摘要： A RAM mounted so as to mix with logic circuits has a plurality of memory mats and one control circuit provided for the plurality of memory mats. Arithmetic circuits for respectively performing +1 or -1 arithmetic operations are respectively provided so as to correspond to the respective memory mats and are electrically connected in cascade form. An input terminal of the initial-stage arithmetic circuit is supplied with address-setting fixed address signals. Input signals supplied to the next and subsequent arithmetic circuits or signals outputted therefrom are defined as own-assigned address signals (those assigned to the corresponding memory mats). A comparator provided in association with each arithmetic circuit referred to above makes comparisons for coincidence between the address signals and address signals input upon memory access. The corresponding memory mat is selected based on the resultant coincidence signal.

公开(公告)号：US6091660A

公开(公告)日：2000-07-18

申请号：US376468

申请日：1999-08-18

申请人： Toshio Sasaki ,  Yuji Tanaka ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka ,  Jun Sato ,  Takashi Miyamoto ,  Mariko Ohtsuka ,  Satoru Nakanishi ,  Kazushige Ayukawa ,  Takao Watanabe

发明人： Toshio Sasaki ,  Yuji Tanaka ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka ,  Jun Sato ,  Takashi Miyamoto ,  Mariko Ohtsuka ,  Satoru Nakanishi ,  Kazushige Ayukawa ,  Takao Watanabe

IPC分类号： G11C11/401 ,  G11C8/00 ,  G11C8/12 ,  G11C11/407

CPC分类号： G11C8/12

摘要： A RAM mounted so as to mix with logic circuits has a plurality of memory mats and one control circuit provided for the plurality of memory mats. Arithmetic circuits for respectively performing +1 or -1 arithmetic operations are respectively provided so as to correspond to the respective memory mats and are electrically connected in cascade form. An input terminal of the initial-stage arithmetic circuit is supplied with address-setting fixed address signals. Input signals supplied to the next and subsequent arithmetic circuits or signals outputted therefrom are defined as own-assigned address signals (those assigned to the corresponding memory mats). A comparator provided in association with each arithmetic circuit referred to above makes comparisons for coincidence between the address signals and address signals input upon memory access. The corresponding memory mat is selected based on the resultant coincidence signal.

摘要翻译： 安装成与逻辑电路混合的RAM具有多个存储器垫和为多个存储器垫提供的一个控制电路。 分别提供用于分别执行+1或-1算术运算的算术电路，以便对应于相应的存储器垫并且以级联形式电连接。 初始级算术电路的输入端被提供地址设定固定地址信号。 提供给下一个和后续运算电路的输入信号或从其输出的信号被定义为自己分配的地址信号（分配给相应的存储器垫的那些）。 与上述每个运算电路相关联地提供的比较器比较了存储器访问时输入的地址信号和地址信号之间的一致性。 基于所得到的一致信号来选择相应的存储器垫。

公开(公告)号：US6097663A

公开(公告)日：2000-08-01

申请号：US413641

申请日：1999-10-06

申请人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

发明人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

IPC分类号： G06F17/50 ,  G11C7/00 ,  G11C7/02 ,  G11C7/10 ,  G11C8/12 ,  H01L27/108 ,  G11C8/00

CPC分类号： G11C7/02 ,  G11C7/10 ,  G11C7/1006 ,  G11C7/1042 ,  G11C7/1072 ,  H01L27/10897

摘要： A semiconductor IC device is designed using a memory core with a plurality of I/O lines, a transfer circuit module and a logic library which are produced beforehand and stored in a data base. The memory core and a logic circuit are arranged so that their I/O lines extend in the same direction. A transfer circuit including plural stages of switch groups is arranged between the I/O lines of the memory core and the I/O lines of the logic circuit. Switches forming each stage of switch group are formed between the I/O lines of the memory core and the I/O lines of the logic circuit. When one stage of or a small number of stages of switch groups are turned on, the I/O lines of the memory core and the I/O lines of the logic circuit are turned on, thereby forming a desired transfer pattern. The memory core is constructed by the combination of functional modules such as an amplifier module, a bank module and a power supply module. In the bank module are arranged row-system circuits which operate independently of each other and a multiplicity of I/O lines which extend in a bit line direction.

公开(公告)号：US06335898B2

公开(公告)日：2002-01-01

申请号：US09808943

申请日：2001-03-16

申请人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

发明人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

IPC分类号： G11C800

CPC分类号： G11C7/02 ,  G11C7/10 ,  G11C7/1006 ,  G11C7/1042 ,  G11C7/1072 ,  H01L27/10897

摘要： A semiconductor IC device is designed using a memory core with a plurality of I/O lines, a transfer circuit module and a logic library which are produced beforehand and stored in a data base. The memory core and a logic circuit are arranged so that their I/O lines extend in the same direction. A transfer circuit including plural stages of switch groups is arranged between the I/O lines of the memory core and the I/O lines of the logic circuit. Switches forming each stage of switch group are formed between the I/O lines of the memory core and the I/O lines of the logic circuit. When one stage of or a small number of stages of switch groups are turned on, the I/O lines of the memory core and the I/O lines of the logic circuit are turned on, thereby forming a desired transfer pattern. The memory core is constructed by the combination of functional modules such as an amplifier module, a bank module and a power supply module. In the bank module are arranged row-system circuits which operate independently of each other and a multiplicity of I/O lines which extend in a bit line direction.

公开(公告)号：US5995439A

公开(公告)日：1999-11-30

申请号：US188367

申请日：1998-11-10

申请人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

发明人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

IPC分类号： G06F17/50 ,  G11C7/00 ,  G11C7/02 ,  G11C7/10 ,  G11C8/12 ,  H01L27/108 ,  G11C8/00

CPC分类号： G11C7/02 ,  G11C7/10 ,  G11C7/1006 ,  G11C7/1042 ,  G11C7/1072 ,  H01L27/10897

摘要： A semiconductor IC device is designed using a memory core with a plurality of I/O lines, a transfer circuit module and a logic library which are produced beforehand and stored in a data base. The memory core and a logic circuit are arranged so that their I/O lines extend in the same direction. A transfer circuit including plural stages of switch groups is arranged between the I/O lines of the memory core and the I/O lines of the logic circuit. Switches forming each stage of switch group are formed between the I/O lines of the memory core and the I/O lines of the logic circuit. When one stage of or a small number of stages of switch groups are turned on, the I/O lines of the memory core and the I/O lines of the logic circuit are turned on, thereby forming a desired transfer pattern. The memory core is constructed by the combination of functional modules such as an amplifier module, a bank module and a power supply module. In the bank module are arranged row-system circuits which operate independently of each other and a multiplicity of I/O lines which extend in a bit line direction.

公开(公告)号：US06609236B2

公开(公告)日：2003-08-19

申请号：US09964615

申请日：2001-09-28

申请人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

发明人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

IPC分类号： G06F945

CPC分类号： G11C7/02 ,  G11C7/10 ,  G11C7/1006 ,  G11C7/1042 ,  G11C7/1072 ,  H01L27/10897

摘要： A semiconductor IC device is designed using a memory core with a plurality of I/O lines, a transfer circuit module and a logic library which are produced beforehand and stored in a data base. The memory core and a logic circuit are arranged so that their I/O lines extend in the same direction. A transfer circuit including plural stages of switch groups is arranged between the I/O lines of the memory core and the I/O lines of the logic circuit. Switches forming each stage of switch group are formed between the I/O lines of the memory core and the I/O lines of the logic circuit. When one stage of or a small number of stages of switch groups are turned on, the I/O lines of the memory core and the I/O lines of the logic circuit are turned on, thereby forming a desired transfer pattern. The memory core is constructed by the combination of functional modules such as an amplifier module, a bank module and a power supply module. In the bank module are arranged row-system circuits which operate independently of each other and a multiplicity of I/O lines which extend in a bit line direction.

公开(公告)号：US06246629B1

公开(公告)日：2001-06-12

申请号：US09551878

申请日：2000-04-18

申请人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

发明人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

IPC分类号： G11C800

CPC分类号： G11C7/02 ,  G11C7/10 ,  G11C7/1006 ,  G11C7/1042 ,  G11C7/1072 ,  H01L27/10897

摘要： A semiconductor IC device is designed using a memory core with a plurality of I/O lines, a transfer circuit module and a logic library which are produced beforehand and stored in a data base. The memory core and a logic circuit are arranged so that their I/O lines extend in the same direction. A transfer circuit including plural stages of switch groups is arranged between the I/O lines of the memory core and the I/O lines of the logic circuit. Switches forming each stage of switch group are formed between the I/O lines of the memory core and the I/O lines of the logic circuit. When one stage of or a small number of stages of switch groups are turned on, the I/O lines of the memory core and the I/O lines of the logic circuit are turned on, thereby forming a desired transfer pattern. The memory core is constructed by the combination of functional modules such as an amplifier module, a bank module and a power supply module. In the bank module are arranged row-system circuits which operate independently of each other and a multiplicity of I/O lines which extend in a bit line direction.

摘要翻译： 使用具有预先生成并存储在数据库中的多个I / O线，传输电路模块和逻辑库的存储器芯来设计半导体IC器件。 存储器核心和逻辑电路被布置成使得它们的I / O线沿相同的方向延伸。 在存储器芯的I / O线和逻辑电路的I / O线之间设置包括多级开关组的传输电路。 形成开关组的各级的开关形成在存储器芯的I / O线和逻辑电路的I / O线之间。 当开关组的一级或少量阶段被接通时，存储器芯的I / O线和逻辑电路的I / O线导通，从而形成期望的转移模式。 存储器芯由诸如放大器模块，存储体模块和电源模块的功能模块的组合构成。 在银行模块中布置了彼此独立操作的行系统电路和沿位线方向延伸的多个I / O线。

公开(公告)号：US6069834A

公开(公告)日：2000-05-30

申请号：US813900

申请日：1997-03-07

申请人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

发明人： Takao Watanabe ,  Kazushige Ayukawa ,  Ryo Fujita ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

IPC分类号： G06F17/50 ,  G11C7/00 ,  G11C7/02 ,  G11C7/10 ,  G11C8/12 ,  H01L27/108 ,  G11C8/00

CPC分类号： G11C7/02 ,  G11C7/10 ,  G11C7/1006 ,  G11C7/1042 ,  G11C7/1072 ,  H01L27/10897

摘要： A semiconductor IC device is designed using a memory core with a plurality of I/O lines, a transfer circuit module and a logic library which are produced beforehand and stored in a data base. The memory core and a logic circuit are arranged so that their I/O lines extend in the same direction. A transfer circuit including plural stages of switch groups is arranged between the I/O lines of the memory core and the I/O lines of the logic circuit. Switches forming each stage of switch group are formed between the I/O lines of the memory core and the I/O lines of the logic circuit. When one stage of or a small number of stages of switch groups are turned on, the I/O lines of the memory core and the I/O lines of the logic circuit are turned on, thereby forming a desired transfer pattern. The memory core is constructed by the combination of functional modules such as an amplifier module, a bank module and a power supply module. In the bank module are arranged row-system circuits which operate independently of each other and a multiplicity of I/O lines which extend in a bit line direction.

公开(公告)号：US06301184B1

公开(公告)日：2001-10-09

申请号：US09480695

申请日：2000-01-11

申请人： Toshio Sasaki ,  Yoshihiko Yasu ,  Kazumasa Yanagisawa ,  Yuji Tanaka ,  Toshiaki Takahira ,  Yasuto Igarashi ,  Mariko Ohtsuka ,  Yasunobu Aoki

发明人： Toshio Sasaki ,  Yoshihiko Yasu ,  Kazumasa Yanagisawa ,  Yuji Tanaka ,  Toshiaki Takahira ,  Yasuto Igarashi ,  Mariko Ohtsuka ,  Yasunobu Aoki

IPC分类号： G11C800

CPC分类号： G11C11/4074 ,  G11C7/1045

摘要： A DRAM module is applied to the system LSI which is provided with a standby mode for suppressing the whole operation thereof and an operation standby mode which permits at least the DRAM module to operate but suppresses the operation of other circuits. The above-mentioned modes as well as a substrate bias control technology are applied to the CMOS system LSI that operates on a low voltage. The system LSI is controlled to hold or not to hold data, enabling a memory of a large capacity to be mounted and consuming a sufficiently decreased amount of electric power.

摘要翻译： 将DRAM模块应用于具有用于抑制其整体操作的待机模式的系统LSI和至少允许DRAM模块操作但抑制其它电路的操作的操作待机模式。 将上述模式以及衬底偏置控制技术应用于在低电压下工作的CMOS系统LSI。 控制系统LSI以保持或不保存数据，使得能够安装大容量的存储器并消耗足够的电力量。