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    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
    6.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20110198586A1

    公开(公告)日：2011-08-18

    申请号：US13125577

    申请日：2009-10-19

    申请人： Kazuyoshi Inoue ,  Koki Yano ,  Shigekazu Tomai ,  Masashi Kasami ,  Hirokazu Kawashima ,  Futoshi Utsuno

    发明人： Kazuyoshi Inoue ,  Koki Yano ,  Shigekazu Tomai ,  Masashi Kasami ,  Hirokazu Kawashima ,  Futoshi Utsuno

    IPC分类号： H01L29/786 ,  H01L21/36

    CPC分类号： H01L29/7869 ,  H01L29/66742

    摘要： A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film.

    摘要翻译： 一种薄膜晶体管，包括栅电极，栅极绝缘膜，与栅极绝缘膜接触的氧化物半导体膜，以及连接到氧化物半导体膜并与其间的沟道部分分离的源极和漏极，其中 氧化物半导体膜包括包含氢元素的结晶铟氧化物，并且氧化物半导体膜中包含的氢元素的含量相对于形成氧化物半导体膜的所有元素为0.1at％至5at％。

    Semiconductor device, thin film transistor and a method for producing the same
    10.
    发明授权
    Semiconductor device, thin film transistor and a method for producing the same 有权
    半导体器件，薄膜晶体管及其制造方法

    公开(公告)号：US08748879B2

    公开(公告)日：2014-06-10

    申请号：US12599241

    申请日：2008-05-01

    申请人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami ,  Katsunori Honda

    发明人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami ,  Katsunori Honda

    IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L29/786

    CPC分类号： H01L21/02554 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/872

    摘要： A semiconductor device, a thin film transistor, and a method for producing the same capable of decreasing the management cost, and capable of decreasing the production steps to reduce the production cost are proposed. A method for producing a thin film transistor 2 provided with a semiconductor which is composed of a prescribed material and serves as an active layer 41 and a conductor which is composed of a material having the same composition as that of the prescribed material and serves as at least one of a source electrode 51, a drain electrode 53 and a pixel electrode 55, which includes the steps of simultaneously forming into a film an object to be processed and a conductor (a source electrode 51, a source wire 52, a drain electrode 53, a drain wire 54 and a pixel electrode 55) which are composed of the amorphous prescribed material, followed by simultaneous shaping, and crystallizing the object to be processed which has been shaped to allow it to be the active layer 41.

    摘要翻译： 提出了一种半导体器件，薄膜晶体管及其制造方法，其能够降低管理成本，并且能够降低生产步骤以降低生产成本。 一种制造薄膜晶体管2的方法，该薄膜晶体管2设置有由规定材料构成并用作有源层41的半导体以及由具有与规定材料相同成分的材料构成的导体， 源极电极51，漏极电极53和像素电极55中的至少一个，其包括同时形成待处理物体的膜和导体（源电极51，源极线52，漏电极 53，漏极线54和像素电极55），其由非晶态规定材料构成，然后同时成形，并且使已被成形为使其成为有源层41的被处理物体结晶化。