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公开(公告)号：US06491836B1
公开(公告)日：2002-12-10
申请号：US09582434
申请日：2000-06-26
申请人： Tadahiro Kato , Sadayuki Okuni , Shunichi Ikeda , Keiichi Okabe , Hisashi Oshima
发明人： Tadahiro Kato , Sadayuki Okuni , Shunichi Ikeda , Keiichi Okabe , Hisashi Oshima
IPC分类号： H01L21302
CPC分类号： H01L21/02013 , B24B7/228 , B24B37/042 , H01L21/02008 , H01L21/02024 , H01L21/02043 , H01L21/30604
摘要： A method for producing a semiconductor wafer that yields a wafer having high flatness and back surface characteristics to address problems concerning the back surface of a wafer produced by the conventional surface grinding/double side polishing method and observed during the production process. The method comprises flattening both sides of the wafer by surface grinding means, eliminating a mechanically damaged layer by an etching treatment, and then subjecting a front surface of the wafer to a single side polishing treatment, wherein a back surface of the wafer has glossiness in a range of 20-80%.
摘要翻译： 一种生产半导体晶片的方法，其产生具有高平坦度和背面特性的晶片，以解决通过常规的表面研磨/双面抛光方法制造的晶片的背面以及在制造过程中观察到的问题。 该方法包括通过表面研磨装置使晶片的两侧平坦化，通过蚀刻处理消除机械损伤层，然后对晶片的前表面进行单面抛光处理，其中晶片的背面具有光泽度 范围为20-80％。
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公开(公告)号：US06220928B1
公开(公告)日：2001-04-24
申请号：US09301348
申请日：1999-04-29
申请人： Keiichi Okabe , Hisashi Oshima , Sadayuki Okuni , Tadahiro Kato
发明人： Keiichi Okabe , Hisashi Oshima , Sadayuki Okuni , Tadahiro Kato
IPC分类号： B24B4900
摘要： The present invention provides a surface grinding method and apparatus for achieving a thin plate work such as a semiconductor wafer with high flatness, high accuracy and certainty and the apparatus comprises: a surface grinder in which a grinding wheel support member 3 by which a rotary shaft 5 of a grinding wheel 6 is supported is held by a pivotal shaft portion 4 and a grinding wheel shaft inclination control motor 9 which displaces the grinding wheel support member 3 by activating the pivotal shaft portion 4 is provided; a corrective angle storage device 15 which stores a corrective angle of an inclination angle of a rotary shaft 5 of the grinding wheel 6 to a rotary shaft 13 of a wafer 12; and a shaft inclination control apparatus 14 which sends out a signal to control the grinding wheel shaft inclination control motor 9 while reading a corrective angle of the corrective angle storage device 15, wherein a relative inclination angle of the grinding wheel to the thin plate work, in a more concrete manner an inclination angle of the rotary shaft 5 of the grinding wheel 6, is changed for each of grinding steps of high rate feed, low rate feed and spark-out.
摘要翻译： 本发明提供了一种用于实现诸如半导体晶片的薄平板工作的平面磨削方法和装置，其具有高平坦度，高精度和确定性，并且该装置包括：平面磨床，其中砂轮支撑构件3通过旋转轴 砂轮6的支承体5由转轴部4保持，砂轮轴倾斜控制马达9通过使枢轴部4动作来移动砂轮支承部件3。 修正角度存储装置15，其将研磨轮6的旋转轴5的倾斜角度的修正角度存储到晶片12的旋转轴13; 以及轴倾斜控制装置14，其在读取矫正角度存储装置15的校正角度的同时发出信号以控制砂轮轴倾斜控制电动机9，其中，砂轮与薄板的相对倾斜角度作用， 更具体地说，对于高速率进给，低速率进给和火花塞的每个研磨步骤，改变了砂轮6的旋转轴5的倾斜角度。
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公开(公告)号：US06284658B1
公开(公告)日：2001-09-04
申请号：US09348276
申请日：1999-07-07
申请人： Tadahiro Kato , Sadayuki Okuni , Keiichi Okabe , Hisashi Oshima
发明人： Tadahiro Kato , Sadayuki Okuni , Keiichi Okabe , Hisashi Oshima
IPC分类号： H01L21302
CPC分类号： H01L21/02008
摘要： The present invention has an object to provide a manufacturing process of a semiconductor wafer in which improvement on accuracy in a chamfering portion is realized. The manufacturing process of a semiconductor wafer comprises: a slicing step of obtaining a wafer in the shaped of a thin disk by slicing a single crystal ingot; a surface-grinding step of flattening a surface of the wafer; a chamfering step of chamfering the peripheral edge portions; and mirror-polishing step of mirror-polishing the surface of the wafer, wherein a simultaneous double-side surface-grinding step of grinding both sides of the wafer simultaneously by a double-side grinding machine is existent prior to the chamfering step in order to remove wafer waviness and a secondary grinding step is performed by grinding a single side or simultaneously both sides of the wafer after the chamfering step is carried out, so that improvement on accuracy in a chamfered portion is realized.
摘要翻译： 本发明的目的是提供一种半导体晶片的制造工艺，其中实现了倒角部分精度的提高。 半导体晶片的制造工艺包括：切片步骤，通过切片单晶锭获得薄盘状的晶片; 表面研磨步骤，使晶片的表面变平; 倒角步骤，对所述周缘部进行倒角; 以及镜面抛光晶片的表面的镜面抛光步骤，其中在倒角步骤之前存在同时双面研磨步骤，其通过双面研磨机同时研磨晶片的两侧，以便在 通过在进行倒角步骤之后研磨晶片的单面或同时进行二次研磨步骤，从而实现倒角部分精度的提高。
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4.发明授权公开(公告)号：US06652358B1
公开(公告)日：2003-11-25
申请号：US09720688
申请日：2000-12-29
申请人： Shunichi Ikeda , Sadayuki Okuni , Tadahiro Kato
发明人： Shunichi Ikeda , Sadayuki Okuni , Tadahiro Kato
IPC分类号： B24B4900
摘要： In a double side simultaneous grinding machine, in which a plate-like workpiece is held and ground simultaneously on both a front surface and a back surface using a pair of grinding stones provided oppositely at both sides of the workpiece, a relative position between at least one of the center of thickness of the plate-like workpiece and the center of the holding means for holding the workpiece, and the center between stone surfaces of the pair of grinding stones is controlled during grinding. In a double side simultaneous grinding method, the generation of warpage of the plate-like workpiece is suppressed and degradation of warpage is prevented. Thereby, the plate-like workpiece can be processed to have high flatness on both sides. Further, the plate-like workpiece can be ground while a degree of warpage is controlled so that the workpiece is processed to have a warpage of a desired degree.
摘要翻译： 在双面同时研磨机中，使用在工件两侧相对设置的一对研磨石，使板状工件在前表面和后表面上同时保持并同时研磨，至少在至少 板状工件的厚度中心之一和用于保持工件的保持装置的中心，并且在研磨期间控制一对研磨石的石头表面之间的中心。 在双面同时研磨方法中，抑制板状工件的翘曲的产生，并且防止翘曲的劣化。 因此，可以将板状工件加工成在两侧具有高平整度。 此外，可以对板状工件进行研磨，同时控制翘曲程度，使得工件被加工成具有期望程度的翘曲。
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公开(公告)号：US6050880A
公开(公告)日：2000-04-18
申请号：US996190
申请日：1997-12-22
申请人： Tadahiro Kato , Sadayuki Okuni , Hideo Kudo , Hiroshi Tomioka
发明人： Tadahiro Kato , Sadayuki Okuni , Hideo Kudo , Hiroshi Tomioka
摘要： A surface grinding method for a thin-plate workpiece is provided including the steps of (a) roughly surface grinding a first surface of a thin-plate workpiece using a thin-plate workpiece surface grinding device to create a reference plane having no sori or waviness; (b) inverting the thin-plate workpiece, the first surface of which has been roughly surface ground and, with a surface grinding device having a hard chucking plate, chucking the first surface to the hard chucking plate to roughly surface grind a second surface of the thin-plate workpiece; (c) chucking to the hard chucking plate the first surface of the thin-plate workpiece, the second surface of which has been roughly surface ground with the surface grinding device having the hard chucking plate to further finely surface grind the second surface of the thin-plate workpiece; and (d) inverting the thin-plate workpiece, the second surface of which has been finely surface ground and, with the surface grinding device having the hard chucking plate, chucking the second surface to the hard chucking plate to further finely surface grind the first surface of the thin-plate workpiece, wherein the surface grinding device comprising a surface grinding element; and a holding element for holding the thin-plate workpiece to be surface ground, wherein the holding element is a soft holding element. An alternate surface grinding method for a thin-plate workpiece is also provided in which steps (a) and (b) are the same as above and in which steps (c) and (d) are as follows: (c) chucking to the hard chucking plate the second surface of the thin-plate workpiece, the second surface of which has been roughly surface ground with the surface grinding device having the hard chucking plate to finely surface grind the first surface of the thin-plate workpiece; and (d) inverting the thin-plate workpiece, the first surface of which has been finely surface ground and, with the surface grinding device having the hard chucking plate, chucking the second surface to the hard chucking plate to finely surface grind the second surface of the thin-plate workpiece.
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公开(公告)号：US5942445A
公开(公告)日：1999-08-24
申请号：US823746
申请日：1997-03-25
申请人： Tadahiro Kato , Hisashi Masumura , Sadayuki Okuni , Hideo Kudo
发明人： Tadahiro Kato , Hisashi Masumura , Sadayuki Okuni , Hideo Kudo
IPC分类号： B24B1/00 , C30B33/00 , H01L21/302 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02013 , C30B33/00 , H01L21/02008 , H01L21/02019
摘要： According to the invention, the flatness and quality can be improved while simplifying the process even when large size wafers of 200 to 300 mm or above are processed. Basic steps involved are a slicing step E for obtaining thin disc-shape wafers by slicing, a chamfering step F for chamfering the sliced wafers, a flattening step G for flattening the chamfered wafers, an alkali etching step H for removing process damage layers from the flattened wafers, and a double-side polishing step K of simultaneously polishing the two sides of the etched wafers. If necessary, a plasma etching step is used in lieu of the flattening and etching steps G and H respectively.
摘要翻译： 根据本发明，即使处理200〜300mm以上的大尺寸晶片，也能够在简化工序的同时提高平坦度和质量。 所涉及的基本步骤是通过切片获得薄盘形晶片的切片步骤E，用于倒角切片晶片的倒角步骤F，用于使倒角晶片平坦化的平坦化步骤G，用于从工艺损伤层去除工艺损伤层的碱蚀刻步骤H 平坦化的晶片，以及双面研磨工序K，同时抛光被蚀刻的晶片的两面。 如果需要，分别使用等离子体蚀刻步骤代替平坦化和蚀刻步骤G和H.
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7.发明申请METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL AND SILICON WAFER 审中-公开硅单晶，硅单晶和硅晶体的制造方法公开(公告)号：US20070101926A1
公开(公告)日：2007-05-10
申请号：US11620024
申请日：2007-01-04
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032
摘要： The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, comprising the steps of: providing a seed crystal having a tip end with a sharp-pointed shape or a truncation thereof in which an angle of the tip end is 28° or less; keeping the tip end of the seed crystal at just above a silicon melt to heat it before bringing the tip end of the seed crystal into contact with the silicon melt; bringing the tip end of the seed crystal into contact with the silicon melt and immersing the seed crystal into the silicon melt to a desired diameter; and shifting to pull the single crystal, wherein a temperature variation at a surface of the silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of the seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of .
摘要翻译： 本发明是一种通过Czochralski法制造单晶硅的方法，而不进行Dash Necking方法，包括以下步骤：提供具有尖锐形状或截头尖端的晶种，其中， 尖端为28°以下; 将晶种的尖端保持在硅熔体正上方，以使晶种的尖端与硅熔体接触; 使晶种的尖端与硅熔体接触并将晶种浸入硅熔体中至所需的直径; 并且移动以拉动单晶，其中，至少在使晶种的尖端与所述晶体接触的时间点至少保持在所述硅熔体的表面处的温度变化为±5℃以下 硅熔化到移动点以拉动单晶。 因此，在不使用Dash Necking法的情况下，通过Czochralski法生长硅单晶的方法中，可以提高生长不含位错的单晶的成功率，同时可以增加直径大的重硅单晶，其中， 即使在生长晶体取向为<110>的硅单晶的情况下，也可以生长恒定直径部分的直径超过200mm。
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8.发明授权公开(公告)号：US07179330B2
公开(公告)日：2007-02-20
申请号：US10510695
申请日：2003-04-23
IPC分类号： C30B15/00
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032
摘要： The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of .
摘要翻译： 本发明是通过Czochralski法制造单晶硅的方法，而不进行Dash Necking方法，其中硅熔体表面的温度变化至少保持在±5℃或更低的时间点 使晶种的尖端与硅熔体接触以转移以拉动单晶。 因此，在不使用Dash Necking法的情况下，通过Czochralski法生长硅单晶的方法中，可以提高生长不含位错的单晶的成功率，同时可以增加直径大的重硅单晶，其中， 即使在生长晶体取向为<110>的硅单晶的情况下，也可以生长恒定直径部分的直径超过200mm。
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9.发明申请公开(公告)号：US20050160966A1
公开(公告)日：2005-07-28
申请号：US10510695
申请日：2003-04-23
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032
摘要： The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of
摘要翻译： 本发明是通过Czochralski法制造单晶硅的方法，而不进行Dash Necking方法，其中硅熔体表面的温度变化至少保持在±5℃以下， 使晶种的尖端与硅熔体接触以转移以拉动单晶。 因此，在不使用Dash Necking法的情况下，通过Czochralski法生长硅单晶的方法中，可以提高生长不含位错的单晶的成功率，同时可以增加直径大的重硅单晶，其中， 即使在生长晶体取向<110°的硅单晶的情况下，也可以生长恒定直径部分的直径超过200mm，
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