公开(公告)号：US6050880A

公开(公告)日：2000-04-18

申请号：US996190

申请日：1997-12-22

申请人： Tadahiro Kato ,  Sadayuki Okuni ,  Hideo Kudo ,  Hiroshi Tomioka

发明人： Tadahiro Kato ,  Sadayuki Okuni ,  Hideo Kudo ,  Hiroshi Tomioka

IPC分类号： B24B7/04 ,  B24B7/22 ,  B24B1/00

CPC分类号： B24B37/30 ,  B24B7/228

摘要： A surface grinding method for a thin-plate workpiece is provided including the steps of (a) roughly surface grinding a first surface of a thin-plate workpiece using a thin-plate workpiece surface grinding device to create a reference plane having no sori or waviness; (b) inverting the thin-plate workpiece, the first surface of which has been roughly surface ground and, with a surface grinding device having a hard chucking plate, chucking the first surface to the hard chucking plate to roughly surface grind a second surface of the thin-plate workpiece; (c) chucking to the hard chucking plate the first surface of the thin-plate workpiece, the second surface of which has been roughly surface ground with the surface grinding device having the hard chucking plate to further finely surface grind the second surface of the thin-plate workpiece; and (d) inverting the thin-plate workpiece, the second surface of which has been finely surface ground and, with the surface grinding device having the hard chucking plate, chucking the second surface to the hard chucking plate to further finely surface grind the first surface of the thin-plate workpiece, wherein the surface grinding device comprising a surface grinding element; and a holding element for holding the thin-plate workpiece to be surface ground, wherein the holding element is a soft holding element. An alternate surface grinding method for a thin-plate workpiece is also provided in which steps (a) and (b) are the same as above and in which steps (c) and (d) are as follows: (c) chucking to the hard chucking plate the second surface of the thin-plate workpiece, the second surface of which has been roughly surface ground with the surface grinding device having the hard chucking plate to finely surface grind the first surface of the thin-plate workpiece; and (d) inverting the thin-plate workpiece, the first surface of which has been finely surface ground and, with the surface grinding device having the hard chucking plate, chucking the second surface to the hard chucking plate to finely surface grind the second surface of the thin-plate workpiece.

公开(公告)号：US5942445A

公开(公告)日：1999-08-24

申请号：US823746

申请日：1997-03-25

申请人： Tadahiro Kato ,  Hisashi Masumura ,  Sadayuki Okuni ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hisashi Masumura ,  Sadayuki Okuni ,  Hideo Kudo

IPC分类号： B24B1/00 ,  C30B33/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02013 ,  C30B33/00 ,  H01L21/02008 ,  H01L21/02019

摘要： According to the invention, the flatness and quality can be improved while simplifying the process even when large size wafers of 200 to 300 mm or above are processed. Basic steps involved are a slicing step E for obtaining thin disc-shape wafers by slicing, a chamfering step F for chamfering the sliced wafers, a flattening step G for flattening the chamfered wafers, an alkali etching step H for removing process damage layers from the flattened wafers, and a double-side polishing step K of simultaneously polishing the two sides of the etched wafers. If necessary, a plasma etching step is used in lieu of the flattening and etching steps G and H respectively.

摘要翻译： 根据本发明，即使处理200〜300mm以上的大尺寸晶片，也能够在简化工序的同时提高平坦度和质量。 所涉及的基本步骤是通过切片获得薄盘形晶片的切片步骤E，用于倒角切片晶片的倒角步骤F，用于使倒角晶片平坦化的平坦化步骤G，用于从工艺损伤层去除工艺损伤层的碱蚀刻步骤H 平坦化的晶片，以及双面研磨工序K，同时抛光被蚀刻的晶片的两面。 如果需要，分别使用等离子体蚀刻步骤代替平坦化和蚀刻步骤G和H.

公开(公告)号：US06652358B1

公开(公告)日：2003-11-25

申请号：US09720688

申请日：2000-12-29

申请人： Shunichi Ikeda ,  Sadayuki Okuni ,  Tadahiro Kato

发明人： Shunichi Ikeda ,  Sadayuki Okuni ,  Tadahiro Kato

IPC分类号： B24B4900

CPC分类号： B24B37/08 ,  B24B7/17 ,  B24B7/228 ,  B24B37/04 ,  B24B41/062 ,  B24B49/04

摘要： In a double side simultaneous grinding machine, in which a plate-like workpiece is held and ground simultaneously on both a front surface and a back surface using a pair of grinding stones provided oppositely at both sides of the workpiece, a relative position between at least one of the center of thickness of the plate-like workpiece and the center of the holding means for holding the workpiece, and the center between stone surfaces of the pair of grinding stones is controlled during grinding. In a double side simultaneous grinding method, the generation of warpage of the plate-like workpiece is suppressed and degradation of warpage is prevented. Thereby, the plate-like workpiece can be processed to have high flatness on both sides. Further, the plate-like workpiece can be ground while a degree of warpage is controlled so that the workpiece is processed to have a warpage of a desired degree.

摘要翻译： 在双面同时研磨机中，使用在工件两侧相对设置的一对研磨石，使板状工件在前表面和后表面上同时保持并同时研磨，至少在至少 板状工件的厚度中心之一和用于保持工件的保持装置的中心，并且在研磨期间控制一对研磨石的石头表面之间的中心。 在双面同时研磨方法中，抑制板状工件的翘曲的产生，并且防止翘曲的劣化。 因此，可以将板状工件加工成在两侧具有高平整度。 此外，可以对板状工件进行研磨，同时控制翘曲程度，使得工件被加工成具有期望程度的翘曲。

公开(公告)号：US06220928B1

公开(公告)日：2001-04-24

申请号：US09301348

申请日：1999-04-29

申请人： Keiichi Okabe ,  Hisashi Oshima ,  Sadayuki Okuni ,  Tadahiro Kato

发明人： Keiichi Okabe ,  Hisashi Oshima ,  Sadayuki Okuni ,  Tadahiro Kato

IPC分类号： B24B4900

CPC分类号： B24B7/228 ,  B24B49/00 ,  B24B51/00

摘要： The present invention provides a surface grinding method and apparatus for achieving a thin plate work such as a semiconductor wafer with high flatness, high accuracy and certainty and the apparatus comprises: a surface grinder in which a grinding wheel support member 3 by which a rotary shaft 5 of a grinding wheel 6 is supported is held by a pivotal shaft portion 4 and a grinding wheel shaft inclination control motor 9 which displaces the grinding wheel support member 3 by activating the pivotal shaft portion 4 is provided; a corrective angle storage device 15 which stores a corrective angle of an inclination angle of a rotary shaft 5 of the grinding wheel 6 to a rotary shaft 13 of a wafer 12; and a shaft inclination control apparatus 14 which sends out a signal to control the grinding wheel shaft inclination control motor 9 while reading a corrective angle of the corrective angle storage device 15, wherein a relative inclination angle of the grinding wheel to the thin plate work, in a more concrete manner an inclination angle of the rotary shaft 5 of the grinding wheel 6, is changed for each of grinding steps of high rate feed, low rate feed and spark-out.

摘要翻译： 本发明提供了一种用于实现诸如半导体晶片的薄平板工作的平面磨削方法和装置，其具有高平坦度，高精度和确定性，并且该装置包括：平面磨床，其中砂轮支撑构件3通过旋转轴 砂轮6的支承体5由转轴部4保持，砂轮轴倾斜控制马达9通过使枢轴部4动作来移动砂轮支承部件3。 修正角度存储装置15，其将研磨轮6的旋转轴5的倾斜角度的修正角度存储到晶片12的旋转轴13; 以及轴倾斜控制装置14，其在读取矫正角度存储装置15的校正角度的同时发出信号以控制砂轮轴倾斜控制电动机9，其中，砂轮与薄板的相对倾斜角度作用， 更具体地说，对于高速率进给，低速率进给和火花塞的每个研磨步骤，改变了砂轮6的旋转轴5的倾斜角度。

公开(公告)号：US06491836B1

公开(公告)日：2002-12-10

申请号：US09582434

申请日：2000-06-26

申请人： Tadahiro Kato ,  Sadayuki Okuni ,  Shunichi Ikeda ,  Keiichi Okabe ,  Hisashi Oshima

发明人： Tadahiro Kato ,  Sadayuki Okuni ,  Shunichi Ikeda ,  Keiichi Okabe ,  Hisashi Oshima

IPC分类号： H01L21302

CPC分类号： H01L21/02013 ,  B24B7/228 ,  B24B37/042 ,  H01L21/02008 ,  H01L21/02024 ,  H01L21/02043 ,  H01L21/30604

摘要： A method for producing a semiconductor wafer that yields a wafer having high flatness and back surface characteristics to address problems concerning the back surface of a wafer produced by the conventional surface grinding/double side polishing method and observed during the production process. The method comprises flattening both sides of the wafer by surface grinding means, eliminating a mechanically damaged layer by an etching treatment, and then subjecting a front surface of the wafer to a single side polishing treatment, wherein a back surface of the wafer has glossiness in a range of 20-80%.

摘要翻译： 一种生产半导体晶片的方法，其产生具有高平坦度和背面特性的晶片，以解决通过常规的表面研磨/双面抛光方法制造的晶片的背面以及在制造过程中观察到的问题。 该方法包括通过表面研磨装置使晶片的两侧平坦化，通过蚀刻处理消除机械损伤层，然后对晶片的前表面进行单面抛光处理，其中晶片的背面具有光泽度 范围为20-80％。

公开(公告)号：US06284658B1

公开(公告)日：2001-09-04

申请号：US09348276

申请日：1999-07-07

申请人： Tadahiro Kato ,  Sadayuki Okuni ,  Keiichi Okabe ,  Hisashi Oshima

发明人： Tadahiro Kato ,  Sadayuki Okuni ,  Keiichi Okabe ,  Hisashi Oshima

IPC分类号： H01L21302

CPC分类号： H01L21/02008

摘要： The present invention has an object to provide a manufacturing process of a semiconductor wafer in which improvement on accuracy in a chamfering portion is realized. The manufacturing process of a semiconductor wafer comprises: a slicing step of obtaining a wafer in the shaped of a thin disk by slicing a single crystal ingot; a surface-grinding step of flattening a surface of the wafer; a chamfering step of chamfering the peripheral edge portions; and mirror-polishing step of mirror-polishing the surface of the wafer, wherein a simultaneous double-side surface-grinding step of grinding both sides of the wafer simultaneously by a double-side grinding machine is existent prior to the chamfering step in order to remove wafer waviness and a secondary grinding step is performed by grinding a single side or simultaneously both sides of the wafer after the chamfering step is carried out, so that improvement on accuracy in a chamfered portion is realized.

摘要翻译： 本发明的目的是提供一种半导体晶片的制造工艺，其中实现了倒角部分精度的提高。 半导体晶片的制造工艺包括：切片步骤，通过切片单晶锭获得薄盘状的晶片; 表面研磨步骤，使晶片的表面变平; 倒角步骤，对所述周缘部进行倒角; 以及镜面抛光晶片的表面的镜面抛光步骤，其中在倒角步骤之前存在同时双面研磨步骤，其通过双面研磨机同时研磨晶片的两侧，以便在 通过在进行倒角步骤之后研磨晶片的单面或同时进行二次研磨步骤，从而实现倒角部分精度的提高。

公开(公告)号：US06432837B1

公开(公告)日：2002-08-13

申请号：US09778679

申请日：2001-02-07

申请人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

发明人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

IPC分类号： H01L21302

摘要： A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, preferably reaction-controlled acid etching, is performed. The etching amount of the alkali etching is greater than the etching amount of the acid etching. Alternatively, in the etching step, reaction-controlled acid etching is first performed and then diffusion-controlled acid etching is performed. The etching amount of the reaction-controlled acid etching is greater than the etching amount of the diffusion-controlled acid etching. The method can remove a mechanically formed damage layer, improve surface roughness, and efficiently decrease the depth of locally formed deep pits, while the flatness of the wafer attained through lapping is maintained, in order to produce a chemically etched wafer having a smooth and flat etched surface that hardly causes generation particles and contamination.

公开(公告)号：US5474644A

公开(公告)日：1995-12-12

申请号：US278132

申请日：1994-07-21

申请人： Tadahiro Kato ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hideo Kudo

IPC分类号： H01L21/306 ,  B05C5/00

CPC分类号： H01L21/02019 ,  H01L21/30604

摘要： A method and an apparatus for high-flatness etching a semiconductor single crystal wafer wherein said wafer is so rotated in a flow of an ethchant radially spreading in a plane that the main surface of said wafer may move parallelly with the flow of said etchant.

摘要翻译： 一种用于高平坦度蚀刻半导体单晶晶片的方法和装置，其中所述晶片以在所述晶片的主表面可以与所述蚀刻剂的流动平行移动的平面中径向扩散的脉冲流旋转。

公开(公告)号：US06239039B1

公开(公告)日：2001-05-29

申请号：US09207193

申请日：1998-12-08

申请人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

发明人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

IPC分类号： H01L21302

CPC分类号： H01L21/02052 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/30608 ,  Y10S438/928 ,  Y10S438/959 ,  Y10S438/974 ,  Y10S438/977

摘要： A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, preferably reaction-controlled acid etching, is performed. The etching amount of the alkali etching is greater than the etching amount of the acid etching. Alternatively, in the etching step, reaction-controlled acid etching is first performed and then diffusion-controlled acid etching is performed. The etching amount of the reaction-controlled acid etching is greater than the etching amount of the diffusion-controlled acid etching. The method can remove a mechanically formed damage layer, improve surface roughness, and efficiently decrease the depth of locally formed deep pits, while the flatness of the wafer attained through lapping is maintained, in order to produce a chemically etched wafer having a smooth and flat etched surface that hardly causes generation particles and contamination.

摘要翻译： 处理从单晶锭切片的半导体晶片的方法至少包括倒角，研磨，蚀刻，镜面抛光和清洁的步骤。 在蚀刻步骤中，首先进行碱蚀刻，然后进行酸蚀刻，优选进行反应控制的酸蚀刻。 碱蚀刻的蚀刻量大于酸蚀刻的蚀刻量。 或者，在蚀刻步骤中，首先进行反应控制的酸蚀刻，然后进行扩散控制的酸蚀刻。 反应控制的酸蚀刻的蚀刻量大于扩散控制的酸蚀刻的蚀刻量。 该方法可以去除机械形成的损伤层，提高表面粗糙度，并有效降低局部形成的深坑的深度，同时通过研磨获得的晶片的平整度得以保持，以便产生具有光滑平坦的化学蚀刻晶片 蚀刻的表面几乎不引起发生颗粒和污染。

公开(公告)号：US5800725A

公开(公告)日：1998-09-01

申请号：US789798

申请日：1997-01-28

申请人： Tadahiro Kato ,  Hisashi Masumura ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hisashi Masumura ,  Hideo Kudo

IPC分类号： H01L21/306 ,  H01L21/302 ,  H01L21/304 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/02008

摘要： A method of manufacturing semiconductor wafers includes a double side primary polishing step, a back side etching step and a single side mirror polishing step. This method is capable of easy sensor detection of the front and back sides of the wafer, wafer processing of higher flatness level by forming etched rough surface at the back side of the double side polished wafer and setting up of wafer manufacturing process including a double side polishing step.

摘要翻译： 制造半导体晶片的方法包括双面一次抛光步骤，背面蚀刻步骤和单面镜面抛光步骤。 该方法能够容易地传感器检测晶片的正面和背面，通过在双面抛光晶片的背面形成蚀刻的粗糙表面并设置包括双面的晶片制造工艺，从而提高平坦度的晶片处理 抛光步骤