公开(公告)号：US20160165162A1

公开(公告)日：2016-06-09

申请号：US14925333

申请日：2015-10-28

Applicant: Keiji Mabuchi ,  Eiichi FUNATSU ,  Kasai Masanori

Inventor： Keiji Mabuchi ,  Eiichi FUNATSU ,  Kasai Masanori

IPC: H04N5/378 ,  H04N5/225 ,  H04N5/369 ,  H04N5/376

CPC classification number: H04N5/378 ,  H04N5/2253 ,  H04N5/3559 ,  H04N5/365 ,  H04N5/3698 ,  H04N5/37213 ,  H04N5/374 ,  H04N5/376 ,  H04N5/3765

Abstract: A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

Abstract translation: CMOS传感器具有由光接收元件和三个晶体管构成的单位像素，以防止饱和阴影现象和动态范围的减小。 在关闭所有像素中共享的漏极线上的电压时，转换时间（下降时间）的长度大于转动任何复位线和传输线的转换时间。 因此，构成DRN驱动缓冲器的晶体管的W / L比是合适的。 同时，将控制电阻或电流源插入到GND的一条线上，以使驱动期间的操作电流正确。 这样可以减少饱和度遮蔽量。 通过使抑制型复位晶体管成为抑制浮动扩散的漏电流，扩大动态范围。

公开(公告)号：US20140001338A1

公开(公告)日：2014-01-02

申请号：US13852787

申请日：2013-03-28

Applicant: Keiji MABUCHI ,  Eiichi FUNATSU ,  Masanori KASAI

Inventor： Keiji MABUCHI ,  Eiichi FUNATSU ,  Masanori KASAI

IPC: H04N5/372

CPC classification number: H04N5/378 ,  H04N5/2253 ,  H04N5/3559 ,  H04N5/365 ,  H04N5/3698 ,  H04N5/37213 ,  H04N5/374 ,  H04N5/376 ,  H04N5/3765

Abstract: A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

Abstract translation: CMOS传感器具有由光接收元件和三个晶体管构成的单位像素，以防止饱和阴影现象和动态范围的减小。 在关闭所有像素中共享的漏极线上的电压时，转换时间（下降时间）的长度大于转动任何复位线和传输线的转换时间。 因此，构成DRN驱动缓冲器的晶体管的W / L比是合适的。 同时，将控制电阻或电流源插入到GND的一条线上，以使驱动期间的操作电流正确。 这样可以减少饱和度遮蔽量。 通过使抑制型复位晶体管成为抑制浮动扩散的漏电流，扩大动态范围。

公开(公告)号：US20100308386A1

公开(公告)日：2010-12-09

申请号：US12795442

申请日：2010-06-07

Applicant: Takashi ABE ,  Nobuo NAKAMURA ,  Keiji MABUCHI ,  Tomoyuki UMEDA ,  Hiroaki FUJITA ,  Eiichi FUNATSU ,  Hiroki SATO

Inventor： Takashi ABE ,  Nobuo NAKAMURA ,  Keiji MABUCHI ,  Tomoyuki UMEDA ,  Hiroaki FUJITA ,  Eiichi FUNATSU ,  Hiroki SATO

IPC: H01L31/14

CPC classification number: H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract translation: 形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。 使用活性区域的硅化物膜也可以用于配准标记。 此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。 也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。