公开(公告)号：US09402038B2

公开(公告)日：2016-07-26

申请号：US13482631

申请日：2012-05-29

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H04N5/217 ,  H04N5/335 ,  H01L27/00 ,  H01J40/14 ,  H04N5/353 ,  H04N5/359 ,  H04N5/3745

CPC分类号： H04N5/353 ,  H04N5/359 ,  H04N5/3591 ,  H04N5/37457

摘要： A solid-state imaging device includes: a pixel array section including an array of pixels in a two-dimensional matrix, the pixels including a photoelectric conversion section configured to generate signal charges in accordance with an amount of light, a discharge section configured to receive an overflow of signal charges exceeding a saturation amount of charges during an exposure period, at least a first charge accumulation section configured to receive the signal charges generated by the photoelectric conversion section after the exposure period, and a second charge accumulation section configured to receive the signal charges exceeding the saturation amount of charges, and a plurality of pixel transistors reading the signal charges; and a scanning section configured to scan the pixels so that accumulation periods for all the pixels are simultaneous in an accumulation period of the signal charges, and to selectively scan the pixels in sequence.

摘要翻译： 固态成像装置包括：像素阵列部，包括二维矩阵中的像素阵列，所述像素包括被配置为根据光量产生信号电荷的光电转换部，被配置为接收的放电部 信号电荷的溢出在曝光期间超过电荷的饱和量，至少第一电荷蓄积部被配置为在曝光期后接收由光电转换部生成的信号电荷，第二电荷累积部被配置为接收 信号电荷超过饱和电荷量，以及读取信号电荷的多个像素晶体管; 以及扫描部，被配置为扫描像素，使得所有像素的累积周期在信号电荷的累积周期中同时进行，并且依次选择性地扫描像素。

公开(公告)号：US20160165162A1

公开(公告)日：2016-06-09

申请号：US14925333

申请日：2015-10-28

申请人： Keiji Mabuchi ,  Eiichi FUNATSU ,  Kasai Masanori

发明人： Keiji Mabuchi ,  Eiichi FUNATSU ,  Kasai Masanori

IPC分类号： H04N5/378 ,  H04N5/225 ,  H04N5/369 ,  H04N5/376

CPC分类号： H04N5/378 ,  H04N5/2253 ,  H04N5/3559 ,  H04N5/365 ,  H04N5/3698 ,  H04N5/37213 ,  H04N5/374 ,  H04N5/376 ,  H04N5/3765

摘要： A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

摘要翻译： CMOS传感器具有由光接收元件和三个晶体管构成的单位像素，以防止饱和阴影现象和动态范围的减小。 在关闭所有像素中共享的漏极线上的电压时，转换时间（下降时间）的长度大于转动任何复位线和传输线的转换时间。 因此，构成DRN驱动缓冲器的晶体管的W / L比是合适的。 同时，将控制电阻或电流源插入到GND的一条线上，以使驱动期间的操作电流正确。 这样可以减少饱和度遮蔽量。 通过使抑制型复位晶体管成为抑制浮动扩散的漏电流，扩大动态范围。

公开(公告)号：US09179073B2

公开(公告)日：2015-11-03

申请号：US13426719

申请日：2012-03-22

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H04N5/235 ,  H04N5/355 ,  H04N5/378

CPC分类号： H04N5/378 ,  H04N5/2351 ,  H04N5/35545

摘要： A solid-state imaging device is provided that includes a pixel array section having pixels which detect a physical quantities that are arranged in two dimensions of a matrix; an Analog-Digital (AD) converting section that performs AD conversion for a plurality of channels of analog pixel signals which are read-out from the pixel array section; and a control section that sets quantized units AD-converted by the AD conversion section according to a gain setting of the unit pixel signal, where the control section determines a grayscale number of digital outputs AD-converted for at least one channel of the unit pixel signals according to the gain setting of the pixel signal.

摘要翻译： 提供一种固态成像装置，其包括像素阵列部分，该像素阵列部分具有检测布置在矩阵的二维中的物理量的像素; 模拟数字（AD）转换部分，对从像素阵列部分读出的多个模拟像素信号进行AD转换; 以及控制部分，其根据单位像素信号的增益设置来设置由AD转换部分AD转换的量化单元，其中控制部分确定对于单位像素的至少一个通道AD转换的数字输出的灰度级数 信号根据像素信号的增益设置。

公开(公告)号：US09041827B2

公开(公告)日：2015-05-26

申请号：US11655201

申请日：2007-01-19

申请人： Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

发明人： Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

IPC分类号： H04N5/228 ,  H04N5/335 ,  H04N3/14

CPC分类号： H04N5/335

摘要： The invention makes it possible to perform effective A/D conversion on pixel signals read from a pixel array part, to achieve a reduction in power consumption and reductions in the size and the price of an image pickup device as well as simplification of the construction of the device, and to realize a high-quality image output. The device includes an pixel array part having a plurality of unit pixels, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read from a pixel array part via a signal line is subjected to CDS processing (noise elimination processing) in the CDS circuit, and then this pixel signal is inputted into the A/D converter which performs A/D conversion on the pixel signal. The A/D converter includes a ΔΣ modulator and a digital filter to perform highly accurate A/D conversion. The invention can also be applied to a construction in which an A/D converter is provided at the front stage of the CDS circuit.

摘要翻译： 本发明使得可以对从像素阵列部分读取的像素信号进行有效的A / D转换，以实现图像拾取装置的功耗的降低和尺寸和价格的降低以及简化的 该设备，并实现高质量的图像输出。 该装置包括具有多个单位像素的像素阵列部分，CDS（相关双采样）电路和A / D转换器。 经由信号线从像素阵列部分读取的像素信号在CDS电路中进行CDS处理（噪声消除处理），然后将该像素信号输入到对像素进行A / D转换的A / D转换器 信号。 A / D转换器包括＆Dgr＆amp; 调制器和数字滤波器，以执行高精度的A / D转换。 本发明也可以应用于在CDS电路的前级设置A / D转换器的结构。

公开(公告)号：US08934038B2

公开(公告)日：2015-01-13

申请号：US13450236

申请日：2012-04-18

申请人： Keiji Mabuchi ,  Koichi Shiono

发明人： Keiji Mabuchi ,  Koichi Shiono

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/345 ,  H04N5/343 ,  H04N5/347 ,  H04N5/376 ,  H04N9/04 ,  H04N5/374

CPC分类号： H04N5/343 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14812 ,  H04N5/3456 ,  H04N5/3458 ,  H04N5/347 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045 ,  H04N9/04511 ,  H04N2209/045

摘要： There is used an XY address type solid-state image pickup element (for example, a MOS type image sensor) in which two rows and two columns are made a unit, and color filters having a color coding of repetition of the unit (repetition of two verticals (two horizontals) are arranged, and when a thinning-out read mode is specified, a clock frequency of a system is changed to 1/9, and on the basis of the changed clock frequency, a pixel is selected every three pixels in both a row direction and a column direction to successively read out a pixel signal.

摘要翻译： 使用其中两行和两列成为一个单元的XY地址类型的固态图像拾取元件（例如，MOS型图像传感器），以及具有单元重复的颜色编码的滤色器（重复 布置两个垂直线（两个水平线），当指定了稀疏读出模式时，系统的时钟频率变为1/9，并且基于改变的时钟频率，每3个像素选择一个像素 在行方向和列方向上，以连续地读出像素信号。

公开(公告)号：US08917341B2

公开(公告)日：2014-12-23

申请号：US13027351

申请日：2011-02-15

申请人： Yorito Sakano ,  Keiji Mabuchi

发明人： Yorito Sakano ,  Keiji Mabuchi

IPC分类号： H04N5/335 ,  H01L27/146 ,  H04N5/355 ,  H04N5/3745

CPC分类号： H04N5/3559 ,  H04N5/37452

摘要： A solid-state imaging device with a photodiode, a first charge accumulation region electronically connected to the photodiode, a second charge accumulation region electronically connected to the photodiode, where a charge generated in the photodiode is distributed into the first charge accumulation region and the second charge accumulation region based on an amount of charge.

摘要翻译： 一种具有光电二极管的固态成像装置，与光电二极管电连接的第一电荷累积区，电连接到光电二极管的第二电荷累积区，其中在光电二极管中产生的电荷分布到第一电荷累积区， 电荷累积区域基于电荷量。

公开(公告)号：US08704924B2

公开(公告)日：2014-04-22

申请号：US13029338

申请日：2011-02-17

申请人： Taiichiro Watanabe ,  Keiji Mabuchi ,  Tetsuji Yamaguchi ,  Isao Hirota ,  Kouichi Harada

发明人： Taiichiro Watanabe ,  Keiji Mabuchi ,  Tetsuji Yamaguchi ,  Isao Hirota ,  Kouichi Harada

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/14 ,  H01L31/0232

CPC分类号： H04N5/3575 ,  H01L27/307 ,  H04N5/2353 ,  H04N5/353

摘要： A solid-state imaging device includes a substrate, a photoelectric conversion element provided on the light incidence side of the substrate and including a photoelectric conversion film sandwiched between a first electrode provided separately for each of pixels, and a second electrode provided opposite the first electrode, the photoelectric conversion film being made of an organic material or an inorganic material and generating a signal charge according to the quantity of incident light, an amplifier transistor having an amplifier gate electrode connected to the first electrode, and a voltage control circuit that is connected to the second electrode, and supplies a desired voltage to the second electrode.

摘要翻译： 一种固态成像装置，包括基板，设置在基板的光入射侧的光电转换元件，并且包括被夹持在为每个像素分开设置的第一电极之间的光电转换膜和与第一电极相对设置的第二电极 所述光电转换膜由有机材料或无机材料制成，并且根据入射光量产生信号电荷;放大晶体管，具有连接到所述第一电极的放大器栅电极;以及电压控制电路， 并且向第二电极提供期望的电压。

公开(公告)号：US08576299B2

公开(公告)日：2013-11-05

申请号：US12731402

申请日：2010-03-25

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H04N5/235 ,  H04N3/14 ,  H04N5/335

CPC分类号： H04N5/35563 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/23229 ,  H04N5/3575 ,  H04N5/363 ,  H04N5/365 ,  H04N5/37213 ,  H04N5/3742 ,  H04N5/3765 ,  H04N5/378

摘要： A solid-state imaging device includes a pixel array section and a signal processing section. The pixel array section is configured to include a plurality of arranged rectangular pixels, each of which has different sizes in the vertical and horizontal directions, and a plurality of adjacent ones of which are combined to form a square pixel having the same size in the vertical and horizontal directions. The signal processing section is configured to perform a process of outputting, as a single signal, a plurality of signals read out from the combined plurality of rectangular pixels.

摘要翻译： 固态成像装置包括像素阵列部分和信号处理部分。 像素阵列部分被配置为包括多个排列的矩形像素，每个矩形像素在垂直和水平方向上具有不同的尺寸，并且其中多个相邻的矩形像素被组合以形成在垂直方向上具有相同尺寸的正方形像素 和水平方向。 信号处理部被配置为执行作为单个信号输出从组合的多个矩形像素读出的多个信号的处理。

公开(公告)号：US08552483B2

公开(公告)日：2013-10-08

申请号：US13541428

申请日：2012-07-03

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/102 ,  H01L31/101 ,  H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

公开(公告)号：US08547463B2

公开(公告)日：2013-10-01

申请号：US11623979

申请日：2007-01-17

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H04N5/335

CPC分类号： H01L27/14636 ,  H01L27/14623 ,  H04N5/3532 ,  H04N5/359 ,  H04N5/374

摘要： In realizing an entire-screen simultaneous shutter function using a solid-state imaging device having a device structure as a CMOS solid-state imaging device, the restriction undergone by exposure time is relieved to secure a sufficient exposure time with swift operation. Separately from a transfer Tr for transferring a signal charge of a buried-type PD to an FD, a drain Tr is provided to exclude a signal charge of the buried PD. Both a channel potential on the drain transistor when turned on and a channel potential on the transfer transistor when turned on are set higher than a depleting potential for the PD. This makes it possible to completely transfer the signal charge of the PD by both the transfer Tr and the drain Tr. In the operation to sequentially read out a signal charge from the FD on a pixel-row basis, PD exposure operation is started in a course of reading out the same.

摘要翻译： 在使用具有作为CMOS固态成像装置的器件结构的固态成像装置实现全屏同时快门功能的同时，通过曝光时间进行的限制得到缓解以通过快速操作确保足够的曝光时间。 与用于将掩埋型PD的信号电荷转移到FD的转移Tr分开设置排出Tr以排除掩埋PD的信号电荷。 导通时漏极晶体管上的沟道电位和导通时传输晶体管上的沟道电位均设置为高于PD的耗尽电位。 这使得可以通过转印Tr和排出Tr完全转印PD的信号电荷。 在从像素行依次读取FD中的信号电荷的操作中，在读出它的过程中开始PD曝光操作。