摘要:
A bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.6 dB and which can be produced in a high yield, as well as an optical isolator, which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the RIG is represented by a chemical formula of Nd3-x-yGdxBiyFe5O12, and x and y satisfy 0.89≦x≦1.43 and 0.85≦y≦1.19. In contrast to conventional RIGs, the RIG represented by the chemical formula of Nd3-x-yGdxBiyFe5O12 of the present invention has an insertion loss of less than 0.6 dB and makes it possible to reduce the amount of heat generated because of absorption of light at wavelengths of about 1 μm. Hence, the RIG has such a remarkable effect that the RIG can be used as a Faraday rotator used for an optical isolator in a high-power laser device for processing.
摘要翻译:具有小于0.6dB的插入损耗并且可以高产率生产的铋取代的稀土铁石榴石晶体膜(RIG)以及通过液相外延生长的光隔离器 由Gd 3(ScGa)5 O 12化学式表示的非磁性石榴石基材,其中RIG由化学式Nd 3-x-yGd x B y Fe 5 O 12表示,x和y满足0.89≦̸ x≦̸ 1.43和0.85≦̸ y≦̸ 1.19。 与传统的RIG相反,本发明的Nd3-x-yGdxBiyFe5O12化学式表示的RIG具有小于0.6dB的插入损耗,并且可以减少由于波长吸收光而产生的热量 约1μm。 因此,RIG具有如此显着的效果,RIG可用作用于高功率激光装置中用于光隔离器的法拉第旋转器用于处理。
摘要:
A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.
摘要翻译:包括像素信号控制器的固态成像装置的前置放大器(列区域单元)。 像素信号控制器对于每个垂直信号线,由像素信号放大器的输出侧的像素信号检测器独立地检测每个像素信号的电平,并且根据图像信号放大器独立地设置增益 信号的电平。 在固态成像装置的后续阶段,提供了模数(A / D)转换器和信号延伸单元。 A / D转换器对像素信号进行数字化,参照来自像素信号检测器的分类信号,通过设置到像素信号放大器的增益来校正数字化像素信号,使得一个屏幕的信号的动态范围 延长了
摘要:
Solid-state image pickup device and processing method, with A/D conversion on pixel signals read from a pixel array part that effectively achieves reductions in power consumption, size and price while retaining a high-quality image output. The device includes a pixel array part, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read via a signal line is subjected to noise elimination processing in the CDS circuit, and is then inputted into the A/D converter. The A/D converter includes a ΔΣ modulator and a digital filter to perform highly accurate A/D conversion. The A/D converter can also be provided at the front stage of the CDS circuit.
摘要翻译:固态图像拾取装置和处理方法,对从像素阵列部分读取的像素信号进行A / D转换,有效地实现功率消耗,尺寸和价格的降低,同时保持高质量的图像输出。 该器件包括像素阵列部分,CDS(相关双采样)电路和A / D转换器。 通过信号线读取的像素信号在CDS电路中进行噪声消除处理,然后被输入到A / D转换器。 A / D转换器包括DeltaSigma调制器和数字滤波器,以执行高精度的A / D转换。 A / D转换器也可以在CDS电路的前级提供。
摘要:
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要:
An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.
摘要:
When pixel signals are separately read from a plurality of horizontal signal lines to achieve high-speed processing, color difference in image signals and stripes are eliminated.In the operation of reading the pixel signals from the (2n)th row, the pixel signals from R pixels on odd columns are output to an output system A through a horizontal signal line (60A). On the other hand, the pixel signals from Gr pixels on even columns are output to an output system B through a horizontal signal line (60B). In the operation of reading the pixel signals from the (2n+1)th row, the pixel signals from Gb pixels on the odd columns are output to the output system B through the horizontal signal line (60B) by the switching operation in a switching circuit (50). Similarly, the pixel signals from B pixels on the even columns are output to the output system A through the horizontal signal line (60A) by the switching operation in the switching circuit (50).
摘要:
A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
摘要:
A solid-state imaging device capable of simplifying a pixel structure to reduce a pixel size and capable of suppressing a variation in characteristics between pixels when a plurality of output systems are provided. A unit cell includes two pixels having upper and lower photoelectric converters, transfer transistors connected to the upper and lower photoelectric converters, a reset transistor, and an amplifying transistor. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line along with transfer signal lines and a reset signal line to read out signals simplifies wiring in the pixel and permits reduction of the pixel size.
摘要:
A solid state imaging device having an X-Y addressable solid state imaging device with color filters and a driving unit which reads out pixel information of a same color filter in a unit pixel block as pixel information for one pixel simulatively. A predetermined color coding for the pixels has two rows and two columns. When k is a positive integer equal to or larger than 0, with (2k+3)×(2k+3) pixel blocks as unit pixel blocks, the driving unit reads out pieces of pixel information of the same color filter in each of the unit pixel blocks, the driving unit reads out pieces of pixel information of a same color filter in each of the unit pixel blocks simulatively as pixel information for one pixel in a state in which the unit pixel blocks are laid without overlapping one another, and the driving unit averages the added pieces of pixel information and outputs the averaged pieces of pixel information.
摘要:
An image pickup apparatus comprising an array of unit cells, vertical signal lines, and a control circuit. The unit cells are arranged in rows and columns. Each unit cell has a light-receiving device for receiving light and generating an electric charge corresponding to the light, a charge-accumulating section for accumulating the electric charge generated by the light-receiving device, a transfer device for transferring the electric charge from the light-receiving device to the charge-accumulating section, and a charge-limiting device for limiting the electric charge accumulated in the charge-accumulating section. The vertical signal lines extend along the columns of unit cells, respectively, each for receiving a electric data item corresponding to the electric charge accumulated in the charge-accumulating section of any unit cell of the associated column. The control circuit controls each of the unit cells, causing the charge-limiting device to limit the charge generated by the light-receiving device during a first period and transferred to the charge-accumulating section through the transfer device. The charge generated by the light-receiving device during a second period following the first period and transferred to the charge-accumulating section through the transfer device is added to the electric charge accumulated in the charge-accumulating section.