公开(公告)号：US5078830A

公开(公告)日：1992-01-07

申请号：US490931

申请日：1990-03-09

申请人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa ,  Nobuyuki Uchida ,  Taizo Ohmura

发明人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa ,  Nobuyuki Uchida ,  Taizo Ohmura

IPC分类号： C30B15/12 ,  C30B15/14 ,  C30B15/20 ,  C30B15/22

CPC分类号： C30B15/20 ,  C30B15/12 ,  C30B15/14 ,  C30B15/22 ,  Y10T117/1036

摘要： In a single-crystal growth method disclosed herein, a melt is first prepared in a container having a cylindrical wall. The container is such that at least the inner peripheral surface of the cylindrical wall is formed of a material which is not wettable to the melt. A seed is then immersed in the melt and a single crystal rod formed on the seed is pulled in such a manner as to be coaxial with the cylindrical wall. The distance between the single crystal rod and the inner peripheral surface is set to a prescribed value G, so that the melt adjacent to the inner peripheral surface is formed into a prescribed meniscus shape. The temperature distribution at the melt surface is controlled to maintain the meniscus shape between the single crystal rod and the inner peripheral surface at an equilibrium state to thereby control the diameter of the single crystal rod.

公开(公告)号：US5074953A

公开(公告)日：1991-12-24

申请号：US395724

申请日：1989-08-18

申请人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa

发明人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa

IPC分类号： C30B15/00 ,  C30B15/28

CPC分类号： C30B15/28 ,  C30B29/40 ,  Y10S117/907 ,  Y10T117/1008 ,  Y10T117/1064

摘要： The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material and second material of the dissociative compound semiconductor are prepared. The first material is placed on the bottom of an inner air-tight vessel which is contained in an outer air-tight vessel. The second material is contained in a crucible supported in the inner vessel by a lower shaft extending from the inside to the outside of the inner vessel. The first material is, next, heated for evaporating so as to react with the second material. Therefore, the dissociative compound semiconductor is synthesized in the crucible. Then, temperature of a furnace installed on the inner vessel is adjusted so that the pressure of the gas of the first volatile component material in the inner vessel is controlled. A single crystal is pulled up from the melt by an upper shaft extending from inside to outside of the inner vessel, thereby the single crystal is grown. The improvement is that the pulling-up step includes the steps of: measuring the weight of the growing crystal, the weight influenced by a difference between the interior pressure of the inner vessel and a pressure outside of the inner vessel; correcting the measured weight of the crystal for the error due to the pressure difference, thereby obtaining an accurate estimate of the weight of the crystal; and controlling a diameter of the growing crystal on the basis of the weight estimate of the crystal.

公开(公告)号：US5091043A

公开(公告)日：1992-02-25

申请号：US395718

申请日：1989-08-18

申请人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa

发明人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa

IPC分类号： C30B15/00 ,  C30B15/28

CPC分类号： C30B15/28 ,  C30B29/40 ,  Y10S117/906 ,  Y10T117/1008

摘要： The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material and second material of the dissociative compound semiconductor are prepared. The first material is placed on the bottom of an inner air-tight vessel which is contained in the outer air-tight vessel. The second material is contained in a crucible in the inner vessel. The crucible is supported by a lower shaft extending from the inside to the outside of the inner vessel. The first material is, next, heated for evaporating so as to react with the second material in the crucible. Therefore, the dissociative compound semiconductor is synthesized in the crucible. Then, a single crystal is pulled up from the melt by an upper shaft. The upper shaft extends from inside to outside of the inner vessel, thereby the single crystal is grown. The improvement is that the pulling-up process includes the steps of, after the heating step: measuring the weight of the melt in the crucible, the weight of the melt being influenced by a difference between the interior pressure of the inner vessel and a pressure outside of the inner vessel; correcting the measured weight of the melt for the error due to the pressure difference, thereby obtaining an accurate data of the weight of the melt; and controlling at least one of a composition and a diameter of the growing crystal on the basis of the weight data of the melt.

公开(公告)号：US5373808A

公开(公告)日：1994-12-20

申请号：US50325

申请日：1993-05-19

申请人： Koichi Sassa ,  Takashi Atami ,  Keiji Shirata

发明人： Koichi Sassa ,  Takashi Atami ,  Keiji Shirata

IPC分类号： C30B15/00 ,  C30B15/02 ,  C30B15/22

CPC分类号： C30B15/02 ,  C30B15/00 ,  C30B29/42 ,  Y10T117/1032 ,  Y10T117/1064

摘要： An apparatus and a method are presented for preparing a single crystal ingot of a compound semiconductor material which contains a high vapor pressure component. The apparatus includes: a furnace housing 78 housing a cylindrical hermetic vessel 20 having a ceiling plate section 22A and a bottom plate section 42. External heaters 36, 38 and 40 surrounding the hermetic vessel 20, and a vapor pressure control section which communicates hermetically with the vessel 20. The vapor pressure control section includes: a vapor pressure control tube 98 having a hermetic inner space formed between an inner wall 102 and a coaxial outer wall 100; a communication conduit 96 which hermetically communicates the inner space of the vapor pressure control tube 98 with the inner space of the vessel 20; heat pipes 108, 112 extending along at least one of either the inner wall or the outer wall; control heaters 110, 114 disposed both on the inside of the inner wall and on the outside of the outer wall of the vapor pressure control section 98.

摘要翻译： PCT No.PCT / JP91 / 01547 Sec。 371日期：1993年5月19日 102（e）日期1993年5月19日PCT 1991年11月12日PCT PCT。 出版物WO93 / 22040 日期为1993年11月11日。提出了一种制备含有高蒸汽压成分的化合物半导体材料的单晶锭的装置和方法。 该装置包括：炉壳78，其容纳具有顶板部分22A和底板部分42的圆柱形密封容器20.围绕密封容器20的外部加热器36,38和40以及气密控制部分 蒸汽压力控制部分包括：蒸汽压力控制管98，其具有形成在内壁102和同轴外壁100之间的气密内部空间; 将蒸气压控制管98的内部空间与容器20的内部空间气密地连通的连通导管96; 沿着内壁或外壁中的至少一个延伸的热管108,112; 控制加热器110,114设置在蒸汽压控制部分98的内壁的内侧和外壁上。