公开(公告)号：US5074953A

公开(公告)日：1991-12-24

申请号：US395724

申请日：1989-08-18

申请人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa

发明人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa

IPC分类号： C30B15/00 ,  C30B15/28

CPC分类号： C30B15/28 ,  C30B29/40 ,  Y10S117/907 ,  Y10T117/1008 ,  Y10T117/1064

摘要： The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material and second material of the dissociative compound semiconductor are prepared. The first material is placed on the bottom of an inner air-tight vessel which is contained in an outer air-tight vessel. The second material is contained in a crucible supported in the inner vessel by a lower shaft extending from the inside to the outside of the inner vessel. The first material is, next, heated for evaporating so as to react with the second material. Therefore, the dissociative compound semiconductor is synthesized in the crucible. Then, temperature of a furnace installed on the inner vessel is adjusted so that the pressure of the gas of the first volatile component material in the inner vessel is controlled. A single crystal is pulled up from the melt by an upper shaft extending from inside to outside of the inner vessel, thereby the single crystal is grown. The improvement is that the pulling-up step includes the steps of: measuring the weight of the growing crystal, the weight influenced by a difference between the interior pressure of the inner vessel and a pressure outside of the inner vessel; correcting the measured weight of the crystal for the error due to the pressure difference, thereby obtaining an accurate estimate of the weight of the crystal; and controlling a diameter of the growing crystal on the basis of the weight estimate of the crystal.

公开(公告)号：US5091043A

公开(公告)日：1992-02-25

申请号：US395718

申请日：1989-08-18

申请人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa

发明人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa

IPC分类号： C30B15/00 ,  C30B15/28

CPC分类号： C30B15/28 ,  C30B29/40 ,  Y10S117/906 ,  Y10T117/1008

摘要： The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material and second material of the dissociative compound semiconductor are prepared. The first material is placed on the bottom of an inner air-tight vessel which is contained in the outer air-tight vessel. The second material is contained in a crucible in the inner vessel. The crucible is supported by a lower shaft extending from the inside to the outside of the inner vessel. The first material is, next, heated for evaporating so as to react with the second material in the crucible. Therefore, the dissociative compound semiconductor is synthesized in the crucible. Then, a single crystal is pulled up from the melt by an upper shaft. The upper shaft extends from inside to outside of the inner vessel, thereby the single crystal is grown. The improvement is that the pulling-up process includes the steps of, after the heating step: measuring the weight of the melt in the crucible, the weight of the melt being influenced by a difference between the interior pressure of the inner vessel and a pressure outside of the inner vessel; correcting the measured weight of the melt for the error due to the pressure difference, thereby obtaining an accurate data of the weight of the melt; and controlling at least one of a composition and a diameter of the growing crystal on the basis of the weight data of the melt.

公开(公告)号：US5078830A

公开(公告)日：1992-01-07

申请号：US490931

申请日：1990-03-09

申请人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa ,  Nobuyuki Uchida ,  Taizo Ohmura

发明人： Keiji Shirata ,  Koichi Sassa ,  Kenji Tomizawa ,  Nobuyuki Uchida ,  Taizo Ohmura

IPC分类号： C30B15/12 ,  C30B15/14 ,  C30B15/20 ,  C30B15/22

CPC分类号： C30B15/20 ,  C30B15/12 ,  C30B15/14 ,  C30B15/22 ,  Y10T117/1036

摘要： In a single-crystal growth method disclosed herein, a melt is first prepared in a container having a cylindrical wall. The container is such that at least the inner peripheral surface of the cylindrical wall is formed of a material which is not wettable to the melt. A seed is then immersed in the melt and a single crystal rod formed on the seed is pulled in such a manner as to be coaxial with the cylindrical wall. The distance between the single crystal rod and the inner peripheral surface is set to a prescribed value G, so that the melt adjacent to the inner peripheral surface is formed into a prescribed meniscus shape. The temperature distribution at the melt surface is controlled to maintain the meniscus shape between the single crystal rod and the inner peripheral surface at an equilibrium state to thereby control the diameter of the single crystal rod.

公开(公告)号：US5373808A

公开(公告)日：1994-12-20

申请号：US50325

申请日：1993-05-19

申请人： Koichi Sassa ,  Takashi Atami ,  Keiji Shirata

发明人： Koichi Sassa ,  Takashi Atami ,  Keiji Shirata

IPC分类号： C30B15/00 ,  C30B15/02 ,  C30B15/22

CPC分类号： C30B15/02 ,  C30B15/00 ,  C30B29/42 ,  Y10T117/1032 ,  Y10T117/1064

摘要： An apparatus and a method are presented for preparing a single crystal ingot of a compound semiconductor material which contains a high vapor pressure component. The apparatus includes: a furnace housing 78 housing a cylindrical hermetic vessel 20 having a ceiling plate section 22A and a bottom plate section 42. External heaters 36, 38 and 40 surrounding the hermetic vessel 20, and a vapor pressure control section which communicates hermetically with the vessel 20. The vapor pressure control section includes: a vapor pressure control tube 98 having a hermetic inner space formed between an inner wall 102 and a coaxial outer wall 100; a communication conduit 96 which hermetically communicates the inner space of the vapor pressure control tube 98 with the inner space of the vessel 20; heat pipes 108, 112 extending along at least one of either the inner wall or the outer wall; control heaters 110, 114 disposed both on the inside of the inner wall and on the outside of the outer wall of the vapor pressure control section 98.

摘要翻译： PCT No.PCT / JP91 / 01547 Sec。 371日期：1993年5月19日 102（e）日期1993年5月19日PCT 1991年11月12日PCT PCT。 出版物WO93 / 22040 日期为1993年11月11日。提出了一种制备含有高蒸汽压成分的化合物半导体材料的单晶锭的装置和方法。 该装置包括：炉壳78，其容纳具有顶板部分22A和底板部分42的圆柱形密封容器20.围绕密封容器20的外部加热器36,38和40以及气密控制部分 蒸汽压力控制部分包括：蒸汽压力控制管98，其具有形成在内壁102和同轴外壁100之间的气密内部空间; 将蒸气压控制管98的内部空间与容器20的内部空间气密地连通的连通导管96; 沿着内壁或外壁中的至少一个延伸的热管108,112; 控制加热器110,114设置在蒸汽压控制部分98的内壁的内侧和外壁上。

公开(公告)号：US4750969A

公开(公告)日：1988-06-14

申请号：US878548

申请日：1986-06-25

申请人： Koichi Sassa ,  Kenji Tomizawa

发明人： Koichi Sassa ,  Kenji Tomizawa

IPC分类号： C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/40 ,  H01L21/18 ,  H01L21/208 ,  C30B15/02

CPC分类号： C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/40 ,  C30B29/42

摘要： A method for growing single crystals of a dissociative compound semiconductor which are pulled in an atmosphere of a gas of a volatile component of the dissociative compound filled in an inner chamber sealed within a growth apparatus is provided wherein the space of the inner chamber is divided into different parts by means of partition wall, which is disposed in the inner chamber and the lower part of which is immersed in a melt contained in a crucible, thereby high quality single crystals with a correct stoichiometric composition can be grown under the constant conditions of temperature and pressure without detrimental effects due to thermal convection in the crystal growth region and the melt. The partition wall may be made either of a monolithic structure or a composite structure capable of being divided into two parts, an upper member and a lower member like a float, the upper part of the lower member is vertically movably inserted into upper member.

摘要翻译： 提供一种生长在分离化合物半导体中的单晶的方法，其在密封在生长装置中的填充在内腔中的解离化合物的挥发性成分的气体气氛中拉动，其中内室的空间被分成 不同部分通过分隔壁设置在内室中，其下部浸没在坩埚中的熔体中，从而可以在恒定的温度条件下生长具有正确化学计量组成的高质量单晶 并且由于晶体生长区和熔体中的热对流而没有不利影响的压力。 分隔壁可以由能够分成两部分的单块结构或复合结构制成，上部构件和下部构件如浮子一样，下部构件的上部可上下移动地插入上部构件。

公开(公告)号：US4704257A

公开(公告)日：1987-11-03

申请号：US644840

申请日：1984-08-28

申请人： Kenji Tomizawa ,  Koichi Sassa ,  Yasushi Shimanuki

发明人： Kenji Tomizawa ,  Koichi Sassa ,  Yasushi Shimanuki

IPC分类号： C30B15/00 ,  C30B15/10

CPC分类号： C30B15/10 ,  C30B29/40 ,  Y10S117/90 ,  Y10T117/1012 ,  Y10T117/106 ,  Y10T117/1064

摘要： An apparatus for pulling single crystals of dissociative compounds, with a volatile component gas sealed in a growth chamber at a controlled pressure thereof, is disclosed, wherein the chamber is made of one or more materials selected from the group consisting of ceramics, gas-tight carbon, heat-resistant metallic materials, ceramic-coated carbon and ceramic-coated heat-resistant metallic materials, the chamber can be divided, with a structure of the divided portion of the chamber capable of being sealed by making use of a sealing material with a pressure exerted on the seal, and an optical window is disposed in the chamber through which the growing state of the crystal in the chamber can be observed.

摘要翻译： 公开了一种用于将受控压力密封在生长室中的挥发性成分气体拉出解离化合物的单晶的装置，其中所述室由一种或多种选自陶瓷，气密性 碳，耐热金属材料，陶瓷涂覆碳和陶瓷涂覆的耐热金属材料，腔室可以分开，室的分割部分的结构能够通过使用密封材料被密封 施加在密封件上的压力和光学窗口设置在室中，通过该室可以观察到室中的晶体的生长状态。

公开(公告)号：US4664742A

公开(公告)日：1987-05-12

申请号：US735395

申请日：1985-05-17

申请人： Kenji Tomizawa ,  Yasushi Shimanuki ,  Koichi Sassa

发明人： Kenji Tomizawa ,  Yasushi Shimanuki ,  Koichi Sassa

IPC分类号： C30B15/02 ,  C30B27/02 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B27/02 ,  C30B29/40

摘要： The present invention provides a method for growing single crystals of a dissociative compound by pulling with a volatile component gas of the dissociative compound sealed at a controlled pressure in a heated growth chamber in which the single crystals are pulled, wherein a partition pipe having a lower density than the density of melt of the dissociative compound is disposed so as to immerse its lower end in the melt and the melt is covered with B.sub.2 O.sub.3 at either one of the inside or outside of the partition pipe. The method of the present invention enables the precise, appropriate control of the melt composition during the course of growing and thereby provides single crystals free from any detrimental contamination and undesirable dislocation problems. The thus obtained crystals are especially desirable for use as substrates for high speed and/or optical devices, because of their excellent semi-insulating properties.

摘要翻译： 本发明提供了一种通过在其中拉伸单晶的加热生长室中以受控的压力密封的解离化合物的挥发性成分气体拉动来生长离解化合物的单晶的方法，其中具有较低 配置比解离化合物的熔体密度高的密度，将其下端浸入熔体中，熔融物在分隔管的内部或外部的任意一个处被B2O3覆盖。 本发明的方法能够在生长过程中对熔体组合物进行精确的适当控制，从而提供没有任何有害污染物和不期望的脱位问题的单晶。 因为这样得到的晶体由于其优良的半绝缘性能而特别适合用作高速和/或光学器件的基片。

公开(公告)号：US06353317B1

公开(公告)日：2002-03-05

申请号：US09487386

申请日：2000-01-19

申请人： Mino Green ,  Koichi Sassa ,  Stuart A. Solin ,  Richard A. Stradling ,  Shin Tsuchiya

发明人： Mino Green ,  Koichi Sassa ,  Stuart A. Solin ,  Richard A. Stradling ,  Shin Tsuchiya

IPC分类号： G01V300

CPC分类号： G11B5/3993 ,  G01R33/09 ,  G01R33/095 ,  H01L43/10

摘要： Mesoscopic magnetic field sensors which can detect weak magnetic fields (typically 0.05 Tesla) over areas as small as tens of thousands of square nanometers (e.g. 40 nm×400 nm). The combination of enhanced magneto-resistance in an inhomogeneous high mobility semiconductor, having special electrode arrangements, with the use of island lithography, enables the production of special semiconductor/metal nano-composite structures, and has made possible the fabrication of an entirely new type of magnetic field sensor which exhibits very superior magneto-resistive behavior.

摘要翻译： 介观磁场传感器可以在小到几万平方纳米（例如40 nm×400 nm）的区域内检测弱磁场（通常为0.05特斯拉）。 在具有特殊电极布置的非均匀高迁移率半导体中使用岛状光刻技术的增强磁阻的组合使得能够生产特殊的半导体/金属纳米复合结构，并且使得可能制造出全新型 的磁场传感器，其具有非常优异的磁阻行为。

公开(公告)号：US06220167B1

公开(公告)日：2001-04-24

申请号：US09284502

申请日：1999-04-14

申请人： Masaaki Yamamoto ,  Hidehiro Noda ,  Koichi Sassa

发明人： Masaaki Yamamoto ,  Hidehiro Noda ,  Koichi Sassa

IPC分类号： F42B300

CPC分类号： F42D1/00

摘要： The present invention relates to a blasting method which comprises conducting a delay blast at a particular location; predicting time series data of a waveform of ground vibration or noise at a remote location to be generated by a hypothetical single-hole blast at the particular location using at least one of previous time series data of a waveform of ground vibration or noise generated by said delay blast and actually monitored at the remote location, and the corresponding previous actually applied initiation time series of said delay blast; computing a delay blasting initiation time series for a delay blasting, which provides a waveform of ground vibration or noise satisfying specific conditions, based on the above-predicted time series data of a single-hole blast; and carrying out a subsequent delay blast according to the computed delay blasting initiation time series.

摘要翻译： 爆破方法本发明涉及一种爆破方法，包括在特定位置进行延迟爆炸; 使用由所述地面振动或噪声所产生的噪声的波形的先前时间序列数据中的至少一个来预测在特定位置处由假想单孔爆炸产生的远程位置处的地面振动或噪声波形的时间序列数据 延迟爆炸，并在远程位置实际监控，以及相应的以前实际应用的所述延迟爆炸的启动时间序列; 根据上述预测的单孔爆破时间序列数据计算延迟爆破的延迟爆破启动时间序列，其提供满足特定条件的地面振动或噪声的波形; 并根据计算出的延迟爆破开始时间序列进行随后的延迟爆炸。