公开(公告)号：US20130088737A1

公开(公告)日：2013-04-11

申请号：US13648021

申请日：2012-10-09

申请人： Keisuke IWASA ,  Hajime KUBOTA ,  Hideaki MATSUI ,  Daisuke OKADA ,  Yuto SHIBATA

发明人： Keisuke IWASA ,  Hajime KUBOTA ,  Hideaki MATSUI ,  Daisuke OKADA ,  Yuto SHIBATA

IPC分类号： G06F15/02

CPC分类号： H04N1/0044 ,  H04N1/00941 ,  H04N2201/0082

摘要： A preview image of image data to be output is generated, in response to a request from an operation device, and can be displayed via the operation device. A first preview image of the image data is generated based on an output setting for outputting the image data. The first preview image is stored in a storage device. The output setting can be changed based on a changing request from the operation device. It is determined, in response to a second preview request from the operation device, after sending the first preview image, whether the first preview image is to be regenerated, based on the changed output setting. The first preview image stored in the storage device can be sent when the first preview image is not to be regenerated, for example, when a second preview image is not to be generated.

摘要翻译： 响应于来自操作装置的请求，生成要输出的图像数据的预览图像，并且可以经由操作装置显示。 基于用于输出图像数据的输出设置来生成图像数据的第一预览图像。 第一个预览图像存储在存储设备中。 可以根据来自操作装置的变更请求来改变输出设置。 响应于来自操作设备的第二预览请求，在发送第一预览图像之后，基于改变的输出设置来确定是否要再生第一预览图像。 当不重新生成第一预览图像时，例如当不生成第二预览图像时，可以发送存储在存储设备中的第一预览图像。

公开(公告)号：US20130057916A1

公开(公告)日：2013-03-07

申请号：US13601479

申请日：2012-08-31

申请人： Hajime KUBOTA ,  Daisuke OKADA ,  Hideaki MATSUI ,  Yuto SHIBATA

发明人： Hajime KUBOTA ,  Daisuke OKADA ,  Hideaki MATSUI ,  Yuto SHIBATA

IPC分类号： G06F3/12

CPC分类号： G06F3/1204 ,  G06F3/1208 ,  G06F3/1258 ,  G06F3/1262 ,  G06F3/1285

摘要： An image forming apparatus includes an accumulating unit to accumulate documents, a document selecting unit to receive selection of the accumulated documents to be printed, a screen displaying unit to display on a display unit a printing condition setting screen including default values for selecting plural of the accumulated documents and a list of setting items when the selection received by the document selecting unit indicates plural of the accumulated documents, a reset receiving unit to receive selection of the setting item to be changed and resetting of a default value of the selected setting item, a reset control unit to change a content of the setting item into a resetting content when the setting item is resettable or allow the content to remain unchanged when the setting item is not resettable, and a printing unit to print the accumulated document, the setting item of which is reset.

摘要翻译： 一种图像形成装置，包括：累积单元，用于存储文档;文档选择单元，用于接收所打印的累积文档的选择;画面显示单元，用于在显示单元上显示包括用于选择多个 当由文档选择单元接收到的选择指示多个累积文档时，累积文档和设置项目列表，复位接收单元，用于接收对要改变的设置项目的选择以及重置所选设置项目的默认值， 复位控制单元，当所述设置项可重置时，将所述设置项的内容改变为重置内容，或者当所述设置项不可复位时允许所述内容保持不变;以及打印单元，用于打印所述累积文档，所述设置项 其中重置。

公开(公告)号：US20160155093A1

公开(公告)日：2016-06-02

申请号：US14955884

申请日：2015-12-01

申请人： Yuto SHIBATA ,  Daisuke OKADA ,  Chan GU ,  Keisuke NAKAZAWA ,  Hiroya URUTA ,  Akiko KITAYAMA ,  Yuka SAITO

发明人： Yuto SHIBATA ,  Daisuke OKADA ,  Chan GU ,  Keisuke NAKAZAWA ,  Hiroya URUTA ,  Akiko KITAYAMA ,  Yuka SAITO

IPC分类号： G06Q10/10 ,  G06F21/62 ,  G06Q40/00

CPC分类号： G06Q10/1091 ,  G06F21/35 ,  G06F21/608 ,  G06F21/6218 ,  G06F2221/2101 ,  G06F2221/2117 ,  G06Q40/125

摘要： A main body of the image forming apparatus includes a first user-information storage unit configured to store user information. An information processing terminal includes: a data processing unit configured to acquire attendance information; a user-information processing unit configured to acquire, from the main body of the image forming apparatus, user information of a user who has clocked in determined based on the attendance information and acquire user information read in by the reader from the user-information recording medium for user authentication; and, a second user-information storage unit configured to store the user information of the user who has clocked in. The user-information processing unit being configured to perform user authentication by using the user information stored by the second user-information storage unit and the user information read in by the reader from the user-information recording medium for user authentication.

摘要翻译： 图像形成装置的主体包括：第一用户信息存储单元，被配置为存储用户信息。 信息处理终端包括：数据处理单元，被配置为获取考勤信息; 用户信息处理单元，被配置为从所述图像形成装置的主体获取基于所述考勤信息确定的已经计时的用户的用户信息，并且从所述用户信息记录获取由所述读取器读入的用户信息 用于用户认证的介质; 以及第二用户信息存储单元，其被配置为存储已经记录的用户的用户信息。所述用户信息处理单元被配置为通过使用由所述第二用户信息存储单元存储的用户信息来执行用户认证，以及 读取器从用户信息记录介质读取的用户信息进行用户认证。

公开(公告)号：US20160150123A1

公开(公告)日：2016-05-26

申请号：US14942234

申请日：2015-11-16

申请人： Daisuke OKADA ,  Hiroya URUTA ,  Yuka SAITO ,  Akiko KITAYAMA ,  Yuto SHIBATA ,  Chan GU ,  Keisuke NAKAZAWA

发明人： Daisuke OKADA ,  Hiroya URUTA ,  Yuka SAITO ,  Akiko KITAYAMA ,  Yuto SHIBATA ,  Chan GU ,  Keisuke NAKAZAWA

IPC分类号： H04N1/32 ,  H04N1/00

CPC分类号： H04N1/32368 ,  G06Q10/00 ,  H04N1/00477 ,  H04N2201/0013 ,  H04N2201/0093

摘要： An information processing system includes a first information processing apparatus and a second information processing apparatus. The first information processing apparatus includes an acquisition part creating a first information request, a first transmitter transmitting the first information request to the second information processing apparatus, a first receiver receiving the first information from the second information processing apparatus, a display controller controlling displaying the first information, and a first storage storing second information, the display controller controlling displaying the second information when the second information is stored in the first storage. The second information processing apparatus includes a second storage storing the first information, a second receiver receiving the first information request, an extracting part extracting the first information from the second storage in response to the first information request, and a second transmitter transmitting the first information to the first information processing apparatus.

摘要翻译： 信息处理系统包括第一信息处理装置和第二信息处理装置。 第一信息处理设备包括创建第一信息请求的获取部分，向第二信息处理设备发送第一信息请求的第一发送器，从第二信息处理设备接收第一信息的第一接收器，控制显示第 第一信息和存储第二信息的第一存储器，当第二信息被存储在第一存储器中时，显示控制器控制显示第二信息。 第二信息处理装置包括存储第一信息的第二存储器，接收第一信息请求的第二接收机，响应于第一信息请求从第二存储器提取第一信息的提取部分，以及发送第一信息的第二发送器 到第一信息处理设备。

公开(公告)号：US20160072977A1

公开(公告)日：2016-03-10

申请号：US14841857

申请日：2015-09-01

申请人： Kazuki SASAYAMA ,  Daisuke OKADA ,  Chan GU ,  Yuto SHIBATA ,  Akiko KITAYAMA ,  Daisuke MASUI ,  Masashi TANIGUCHI ,  Noboru TAMURA ,  Naoya TAMURA ,  Yuka SAITO ,  Hiroya URUTA

发明人： Kazuki SASAYAMA ,  Daisuke OKADA ,  Chan GU ,  Yuto SHIBATA ,  Akiko KITAYAMA ,  Daisuke MASUI ,  Masashi TANIGUCHI ,  Noboru TAMURA ,  Naoya TAMURA ,  Yuka SAITO ,  Hiroya URUTA

IPC分类号： H04N1/32 ,  H04N1/00

CPC分类号： H04N1/32101 ,  H04N1/00347 ,  H04N2201/0039 ,  H04N2201/0094 ,  H04N2201/3207 ,  H04N2201/3209

摘要： An information processing apparatus includes an address information storage storing recipient information relating to a recipient and the recipient's address with an address identifier as address information; a program storage storing setting information in association with a program identifier as program information, the setting information including program identification information specifying a program and the address identifier; a program execution unit executing the program associated with the program identifier based on the setting information; an address information change unit changing the address information in the address information storage, and changing the address identifier along with the change in the address information; and an information change adjusting unit adjusting, upon detecting a change in one of the address identifier and the address information, the address identifier of the program information including the address identifier in the program storage in response to the change in the corresponding address identifier or the address information.

摘要翻译： 信息处理装置包括存储与接收者有关的接收者信息的地址信息存储器和具有地址标识符作为地址信息的接收方地址; 存储与节目标识符相关联的设置信息作为节目信息的节目存储，所述设置信息包括指定节目的节目识别信息和地址标识符; 程序执行单元，基于所述设置信息执行与所述程序标识符相关联的程序; 地址信息改变单元改变地址信息存储器中的地址信息，并随着地址信息的改变改变地址标识符; 以及信息改变调整单元，在响应于对应的地址标识符或所述地址标识符的改变来检测包括所述程序存储器中的地址标识符的节目信息的地址标识符 地址信息。

公开(公告)号：US20110233639A1

公开(公告)日：2011-09-29

申请号：US13046751

申请日：2011-03-13

申请人： Hideaki YAMAKOSHI ,  Yasushi OKA ,  Daisuke OKADA

发明人： Hideaki YAMAKOSHI ,  Yasushi OKA ,  Daisuke OKADA

IPC分类号： H01L29/788

CPC分类号： G11C16/0441 ,  G11C5/06 ,  G11C16/0433 ,  H01L27/11519 ,  H01L27/11521

摘要： To improve performance of a semiconductor device having a nonvolatile memory. Further to improve reliability of the semiconductor device. Furthermore, to improve performance of a semiconductor device as well as improving reliability of the semiconductor device.A plurality of memory cells each configured by a memory transistor having a floating gate and a control transistor coupled in series to the memory transistor is arranged in an array in an X direction and in a Y direction on the main surface of a semiconductor substrate. Then, a bit wire that couples drain regions of the memory transistors of the memory cells arranged in the X direction is provided in the lowermost wiring layer of a multilayer wiring structure formed over the semiconductor substrate and the bit wire is arranged to cover the whole floating gate electrode.

摘要翻译： 为了提高具有非易失性存储器的半导体器件的性能。 进一步提高半导体器件的可靠性。 此外，为了提高半导体器件的性能以及提高半导体器件的可靠性。 每个由具有浮动栅极和与存储晶体管串联耦合的控制晶体管的存储晶体管构成的多个存储单元在半导体衬底的主表面上沿X方向和Y方向排列。 然后，在形成在半导体衬底上的多层布线结构的最下层布线层中设置有将在X方向排列的存储单元的存储晶体管的漏极区域连接的位线，并且位线布置成覆盖整个浮置 栅电极。

公开(公告)号：US20110175231A1

公开(公告)日：2011-07-21

申请号：US13075751

申请日：2011-03-30

申请人： Tsutomu OKAZAKI ,  Motoi ASHIDA ,  Hiroji OZAKI ,  Tsuyoshi KOGA ,  Daisuke OKADA

发明人： Tsutomu OKAZAKI ,  Motoi ASHIDA ,  Hiroji OZAKI ,  Tsuyoshi KOGA ,  Daisuke OKADA

IPC分类号： H01L29/423

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/792

摘要： A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.

摘要翻译： 半导体器件的制造方法包括：第一电极形成步骤，在控制栅电极和半导体衬底之间形成控制栅极电极，该控制栅电极在半导体衬底的表面上方，控制栅绝缘膜，形成存储节点 绝缘膜，以及在存储节点绝缘膜的表面上形成存储栅电极的第二电极形成步骤。 第二电极形成步骤包括在存储节点绝缘膜的表面上形成存储栅极电极层的步骤，在表面上形成蚀刻速率慢于存储栅电极层的蚀刻速率的辅助膜的步骤 的存储栅电极层和对存储栅电极层和辅助膜进行各向异性蚀刻的步骤。

公开(公告)号：US20090122609A1

公开(公告)日：2009-05-14

申请号：US12354867

申请日：2009-01-16

申请人： Tsutomu OKAZAKI ,  Daisuke OKADA ,  Kyoya NITTA ,  Toshihiro TANAKA ,  Akira KATA ,  Toshikazu MATSUI ,  Yasushi ISHII ,  Digh HISAMOTO ,  Kan YASUI

发明人： Tsutomu OKAZAKI ,  Daisuke OKADA ,  Kyoya NITTA ,  Toshihiro TANAKA ,  Akira KATA ,  Toshikazu MATSUI ,  Yasushi ISHII ,  Digh HISAMOTO ,  Kan YASUI

IPC分类号： G11C16/04 ,  H01L27/115

CPC分类号： H01L27/1157 ,  G11C16/0425 ,  H01L21/28282 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/4234 ,  H01L29/42344 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section.

摘要翻译： 半导体存储器阵列包括具有第一电荷存储层和第一非易失性存储单元的第一非易失性存储单元，第一非易失性存储单元与第一存储单元相邻，具有第二电荷存储层和第二栅电极 。 第一电极和第二电极在垂直于第一方向的第二方向上延伸，第一电极具有在第一方向上朝向第二电极延伸的第一接触部分，并且第二电极具有朝向第一电极的第二接触部分 第一个方向 第一和第二接触位置分别沿第二方向移动，第一电极和第一接触部分与第二电极和第二接触部分电气分离。

公开(公告)号：US20130082315A1

公开(公告)日：2013-04-04

申请号：US13614853

申请日：2012-09-13

申请人： Naohiro HOSODA ,  Daisuke OKADA ,  Kozo KATAYAMA

发明人： Naohiro HOSODA ,  Daisuke OKADA ,  Kozo KATAYAMA

IPC分类号： H01L29/788 ,  H01L21/283

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/42344 ,  H01L29/42364 ,  H01L29/66833 ,  H01L29/792

摘要： A semiconductor device of the present invention has a first insulating film formed between a control gate electrode and a semiconductor substrate and a second insulating film formed between a memory gate electrode and the semiconductor substrate and between the control gate electrode and the memory gate electrode, the second insulating film having a charge accumulating part therein. The second insulating film has a first film, a second film serving as a charge accumulating part disposed on the first film, and a third film disposed on the second film. The third film has a sidewall film positioned between the control gate electrode and the memory gate electrode and a deposited film positioned between the memory gate electrode and the semiconductor substrate. In this structure, the distance at a corner part of the second insulating film can be increased, and electric-field concentration can be reduced.

摘要翻译： 本发明的半导体器件具有形成在控制栅电极和半导体衬底之间的第一绝缘膜和形成在存储栅电极和半导体衬底之间以及控制栅电极和存储栅电极之间的第二绝缘膜， 其中具有电荷累积部分的第二绝缘膜。 第二绝缘膜具有第一膜，用作第一膜上的电荷蓄积部的第二膜和设置在第二膜上的第三膜。 第三膜具有位于控制栅电极和存储栅电极之间的侧壁膜和位于存储栅电极和半导体衬底之间的沉积膜。 在该结构中，能够增大第二绝缘膜的角部的距离，能够降低电场的浓度。

公开(公告)号：US20110001179A1

公开(公告)日：2011-01-06

申请号：US12820468

申请日：2010-06-22

申请人： Itaru YANAGI ,  Digh HISAMOTO ,  Daisuke OKADA ,  Atushi YOSHITOMI ,  Yasufumi MORIMOTO ,  Toshiyuki MINE

发明人： Itaru YANAGI ,  Digh HISAMOTO ,  Daisuke OKADA ,  Atushi YOSHITOMI ,  Yasufumi MORIMOTO ,  Toshiyuki MINE

IPC分类号： H01L27/115 ,  H01L29/788

CPC分类号： H01L29/42344 ,  G11C16/0408 ,  H01L27/11568 ,  H01L29/40117 ,  H01L29/66833 ,  H01L29/792

摘要： In a non-volatile memory in which charge is injected from a gate electrode to a charge accumulating layer, charge injection efficiency, charge retention characteristic and reliability are all improved compared with a conventional gate structure. In a nonvolatile memory which carries out write/erasure by changing the total charge amount by injecting electrons and holes into a silicon nitride film which makes up a charge accumulating layer, in order to highly efficiently carry out charge injection from a gate electrode, the gate electrode of a memory cell is made up of a two-layer film of a non-doped polysilicon layer and a metal material electrode layer.

摘要翻译： 在从栅电极向电荷累积层注入电荷的非易失性存储器中，与常规栅极结构相比，电荷注入效率，电荷保持特性和可靠性都得到改善。 在通过将电子和空穴注入构成电荷积聚层的氮化硅膜中来改变总电荷量而进行写入/擦除的非易失性存储器中，为了从栅电极高效地进行电荷注入， 存储单元的电极由非掺杂多晶硅层和金属材料电极层的两层膜构成。