摘要:
Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要:
There is provided a method for plasma heat treatment that can suppress the degradation of thermal efficiency even in the case where plasma is used to heat a sample at a temperature of 1,200° C. or more. In a method for plasma heat treatment that a sample to be processed is heated by plasma, the method including the steps of: preheating in which a heat treatment chamber is exhausted while preheating an upper electrode and a lower electrode using plasma generated between the upper electrode and the lower electrode; and heat treatment in which the sample to be processed is heated after the preheating step. The upper electrode and the lower electrode are electrodes containing carbon.
摘要:
A plasma processing apparatus is provided which processes a sample held on a sample table arranged in a process chamber in a vacuum container by using a plasma formed in the process chamber. The plasma processing apparatus comprises: paths arranged in the sample table in which a coolant is supplied and vaporized as it flows; a refrigeration cycle having the sample table, a compressor, a condenser and an expansion valve connected in that order and having the coolant circulate therein; coolant passages to cause the coolant that has passed through the expansion valve to branch and then merge with a coolant returning from the paths in the sample table toward the compressor; and a regulator to adjust an amount of coolant passing through the paths in the sample table and circulating in the refrigeration cycle and an amount of coolant branching and flowing through the coolant passages.
摘要:
A plasma processing apparatus is provided which processes a sample held on a sample table arranged in a process chamber in a vacuum container by using a plasma formed in the process chamber. The plasma processing apparatus comprises: paths arranged in the sample table in which a coolant is supplied and vaporized as it flows; a refrigeration cycle having the sample table, a compressor, a condenser and an expansion valve connected in that order and having the coolant circulate therein; coolant passages to cause the coolant that has passed through the expansion valve to branch and then merge with a coolant returning from the paths in the sample table toward the compressor; and a regulator to adjust an amount of coolant passing through the paths in the sample table and circulating in the refrigeration cycle and an amount of coolant branching and flowing through the coolant passages.
摘要:
A plasma processing apparatus includes a processing chamber encased in a vacuum vessel equipped with an evacuator; a sample stage located in the processing chamber and having an upper surface on which a sample as an object to be processed rests; a gas feeding unit for feeding processing gas into the processing chamber; a plurality of refrigerant ducts which are laid out in the internal of the sample stage and through which liquid refrigerant flows and can be evaporated; a cooling circuit including a compressor, a condenser, an expansion valve and a set of pipelines to connect the compressor, the condenser and the expansion valve in this order; and a selecting unit for selectively feeding the refrigerant through the plural refrigerant ducts in the different steps of the processing. The sample is processed by using plasma while the temperature of the sample stage is being controlled by the cooling circuit.
摘要:
A plasma processing apparatus includes a processing chamber encased in a vacuum vessel equipped with an evacuator; a sample stage located in the processing chamber and having an upper surface on which a sample as an object to be processed rests; a gas feeding unit for feeding processing gas into the processing chamber; a plurality of refrigerant ducts which are laid out in the internal of the sample stage and through which liquid refrigerant flows and can be evaporated; a cooling circuit including a compressor, a condenser, an expansion valve and a set of pipelines to connect the compressor, the condenser and the expansion valve in this order; and a selecting unit for selectively feeding the refrigerant through the plural refrigerant ducts in the different steps of the processing. The sample is processed by using plasma while the temperature of the sample stage is being controlled by the cooling circuit.
摘要:
A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming means are provided so that a the distribution of a direction of a magnetic line of flux on the surface of a planar plate is controlled by a combined magnetic field from the first and second magnetic field-forming means thereby controlling the distribution in degree of the interactions of the magnetic field and an electromagnetic wave. This control ensures the uniformity of a plasma under high density plasma formation conditions, thus enabling one to form a continuous plasma over a wide range of low to high densities. Thus, there can be realized a plasma processing system that ensures processing under wide plasma conditions including high-speed processing under high density conditions.
摘要:
Provided is a heat treatment apparatus in which a heat treatment apparatus in which the thermal efficiency is high, the maintenance expense is low, the throughput is high, the surface roughness of a sample can be reduced, and the discharge uniformity is excellent, although the heat treatment is performed at 1200 ° C. or more.A heat treatment apparatus includes: parallel planar electrodes; a radio-frequency power supply generating plasma by applying radio-frequency power between the parallel planar electrodes; a temperature measuring section measuring the temperature of a heated sample; and a control unit controlling an output of the radio-frequency power supply, wherein at least one of the parallel planar electrodes has a space where the heated sample is installed, therein, and heats the sample in the electrode by the plasma generated between the parallel planar electrodes.
摘要:
The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.
摘要:
Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas introduction unit that introduces a gas to the pair of parallel plate electrodes, reflection mirrors that surround the pair of parallel plate electrodes, and a control unit that controls the output of the high-frequency power supply. Heating of a gas due to discharge between the pair of parallel plate electrodes is used to thermally treat the sample to be heated.