公开(公告)号：US4273812A

公开(公告)日：1981-06-16

申请号：US8587

申请日：1979-02-01

申请人： Ken Tsutsui ,  Akira Sasano ,  Toshio Nakano ,  Haruo Matsumaru ,  Eiichi Maruyama

发明人： Ken Tsutsui ,  Akira Sasano ,  Toshio Nakano ,  Haruo Matsumaru ,  Eiichi Maruyama

IPC分类号： C23C14/04 ,  H05K3/14 ,  H05K3/10 ,  C23C13/00 ,  C23C13/02

CPC分类号： H05K3/143 ,  C23C14/042

摘要： A method of producing material patterns in which at least one substrate is fixed together with a mask to a substrate holder, and an evaporated film of desired substances is formed on the surface of the substrate by means of evaporation sources provided to confront the substrate. The mask is fabricated to have a plurality of reinforcing bridges formed in the desired portions of the mask openings of desired shape formed in the mask. The mask is held spaced from the substrate by a small distance during the evaporation, so that the evaporation may be effected at least through two pattern openings defined at both sides of each bridge. The evaporation is performed by means of evaporation sources which are located such that the line interconnecting one of the edges of each bridge and the evaporation source located at the same side with respect to the substantial bridging direction of the bridge and another line interconnecting the other edge of the bridge and the evaporation source located at the same side as the other edge intersect each other at a point on the surface of the substrate or in the clearance between the substrate surface and the mask. This method makes it possible to produce patterns which could never be produced by the conventional evaporation method.

摘要翻译： 一种生产材料图案的方法，其中至少一个基板与掩模一起固定到基板保持器上，并且通过设置成面对基板的蒸发源在基板的表面上形成所需物质的蒸发膜。 掩模被制造成具有形成在形成在掩模中的所需形状的掩模开口的所需部分中的多个加强桥。 掩模在蒸发期间与衬底间隔开一小段距离，使得蒸发可以至少通过限定在每个桥的两侧的两个图案开口进行。 通过蒸发源进行蒸发，所述蒸发源被定位成使得相对于桥的基本桥接方向互连每个桥的边缘之一的线和位于同一侧的蒸发源的线，另一条线与另一边相互连接 和位于与另一边缘相同侧的蒸发源在基板的表面上的点处或基板表面与掩模之间的间隙中彼此相交。 这种方法使得可以产生由常规蒸发方法所不能产生的图案。

公开(公告)号：US4285007A

公开(公告)日：1981-08-18

申请号：US123085

申请日：1980-02-20

申请人： Toshio Nakano ,  Tadao Kaneko ,  Michiaki Hashimoto ,  Yoshio Hatano ,  Haruo Matsumaru ,  Akira Sasano ,  Eiichi Maruyama

发明人： Toshio Nakano ,  Tadao Kaneko ,  Michiaki Hashimoto ,  Yoshio Hatano ,  Haruo Matsumaru ,  Akira Sasano ,  Eiichi Maruyama

IPC分类号： G02B5/20 ,  H01L27/14 ,  H01L27/146 ,  H04N9/04

CPC分类号： H01L27/14645 ,  H01L27/14609 ,  H01L27/14621

摘要： A color solid-state imager comprises a semiconductor body over which are successively laminated a predetermined number of filter layers of any desired shape having predetermined spectral characteristics and, laminated on the filter layers, a predetermined number of layers composed of a transparent, organic high molecular material which is sensitive to radiation, the semiconductor substrate having at least a detector portion composed of an array of a plurality of optical detector elements. The method of making color solid-state imagers can be simplified by at least using the radiation-sensitive high molecular material for the intermediate layers or protection layers which are used for forming a laminate construction of color-decomposing filters.Further, in mounting the color-decomposing filters on the semiconductor substrate, it is particularly preferred to form beforehand a film of an organic high molecular material.

摘要翻译： 彩色固态成像器包括半导体本体，其上依次层叠具有预定光谱特性的任意所需形状的预定数量的滤光层，并且层叠在滤光层上，预定数量的层由透明的有机高分子 对辐射敏感的材料，所述半导体衬底至少具有由多个光学检测器元件的阵列组成的检测器部分。 通过至少使用辐射敏感的高分子材料用于形成分色滤光片的层叠结构的中间层或保护层，可以简化制备彩色固态成像器的方法。 此外，在将分色滤光片安装在半导体基板上时，特别优选预先形成有机高分子材料的膜。

公开(公告)号：US4395629A

公开(公告)日：1983-07-26

申请号：US215073

申请日：1980-12-10

申请人： Akira Sasano ,  Toshio Nakano ,  Ken Tsutsui ,  Michiaki Hashimoto ,  Tadao Kaneko ,  Yoshio Taniguchi ,  Haruo Matsumaru ,  Akiya Izumi

发明人： Akira Sasano ,  Toshio Nakano ,  Ken Tsutsui ,  Michiaki Hashimoto ,  Tadao Kaneko ,  Yoshio Taniguchi ,  Haruo Matsumaru ,  Akiya Izumi

IPC分类号： H04N9/07 ,  H01L27/14 ,  H01L27/146 ,  G01J3/34

CPC分类号： H01L27/14667 ,  H01L27/14621 ,  H01L27/14645

摘要： According to a solid-state imager of this invention, in case where a plurality of color filters are disposed on a semiconductor body for the solid-state imager including a plurality of photosensitive regions and where the color filter of a third color is constructed by the overlapping between filter members of a first color and a second color, that one of the filter members which has a spectral transmittance substantially transmitting light for exposure for use in forming the filter members is arranged as a lower layer closer to a substrate of the semiconductor body. Even when the filter members are formed by the exposure process, a solid-state imager having good characteristics can be manufactured.

摘要翻译： 根据本发明的固态成像器，在多个滤色器设置在包括多个感光区域的固态成像器的半导体本体上并且第三颜色的滤色器由 在第一颜色和第二颜色的过滤构件之间重叠，具有基本上透射用于形成过滤构件的曝光用光的光谱透射率中的一个被布置为更靠近半导体本体的衬底的下层 。 即使当通过曝光处理形成过滤构件时，也可以制造具有良好特性的固态成像器。

公开(公告)号：US4206384A

公开(公告)日：1980-06-03

申请号：US882041

申请日：1978-02-28

申请人： Akira Sasano ,  Toshio Nakano ,  Haruo Matsumaru ,  Ken Tsutsui ,  Tadaaki Hirai ,  Eiich Maruyama

发明人： Akira Sasano ,  Toshio Nakano ,  Haruo Matsumaru ,  Ken Tsutsui ,  Tadaaki Hirai ,  Eiich Maruyama

IPC分类号： H01J9/02 ,  H01J9/233 ,  H01J29/45 ,  H01J31/46

CPC分类号： H01J29/45 ,  H01J9/233

摘要： For obtaining an improved characteristic, particularly an improved after-image characteristic of image pickup tubes, a target of the tube is produced by at first forming a striped transparent conductive film on a substrate such that the angle formed between the surface of the substrate and the edges of cross-section of the film falls within a range below 20.degree., and then forming a photoconductive film on the striped transparent conductive film. In order to control the angle formed between the surface of the substrate and the side edges of cross-section of the transparent conductive film, at first a mask of a predetermined pattern is formed on the transparent conductive film with a posi-type photosensitive material, and is subjected to an ultraviolet ray. The mask is then heat treated so that the side edges of the mask may be suitably tapered. Finally, the transparent conductive film is formed by sputter etching.

摘要翻译： 为了获得改进的特性，特别是图像拾取管的改进的后图像特性，通过首先在衬底上形成带状透明导电膜，使得在衬底的表面和 膜的横截面的边缘落在低于20°的范围内，然后在条状透明导电膜上形成光电导膜。 为了控制基板的表面和透明导电膜的横截面的侧边缘之间形成的角度，首先，在具有posi型感光材料的透明导电膜上形成预定图案的掩模， 并进行紫外线照射。 然后对掩模进行热处理，使得掩模的侧边缘可以适当地变细。 最后，通过溅射蚀刻形成透明导电膜。

公开(公告)号：US3997810A

公开(公告)日：1976-12-14

申请号：US637574

申请日：1975-12-04

申请人： Ken Tsutsui ,  Akira Sasano ,  Toshio Nakano ,  Haruo Matsumaru ,  Takeo Nishimura

发明人： Ken Tsutsui ,  Akira Sasano ,  Toshio Nakano ,  Haruo Matsumaru ,  Takeo Nishimura

IPC分类号： G02B5/20 ,  H01J29/45 ,  H04N9/07 ,  H01J31/00

CPC分类号： H01J29/45

摘要： A color pick-up tube face plate with shading films is disclosed. These shading films are stripe-shaded opaque films, and are formed between the transparent glass plate and the stripe-shaped color filters. As the boundary portions of all the filters are positioned on these shading films, the light incidented around the boundary portions is hindered by the shading films. For this reason, light reflection or scattering around the boundary portions is effectively eliminated, and a pure high quality color picture is obtained.

摘要翻译： 公开了一种带有遮光膜的拾色管面板。 这些遮光膜是条纹阴影不透明膜，并且形成在透明玻璃板和条形滤色器之间。 当所有滤光器的边界部分位于这些遮光膜上时，入射到边界部分周围的光被遮光膜阻挡。 为此，有效地消除了边界部分附近的光反射或散射，并且获得纯净的高质量彩色图像。

公开(公告)号：US5889573A

公开(公告)日：1999-03-30

申请号：US928719

申请日：1997-09-12

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： 本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备， 更具体地，涉及能够改善其特性的结构和制造方法。 在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。 本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

公开(公告)号：US5359206A

公开(公告)日：1994-10-25

申请号：US674328

申请日：1991-04-15

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L23/48 ,  H01L27/01 ,  H01L31/036

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： PCT No.PCT / JP90 / 01039 Sec。 371日期：1991年4月15日 102（e）日期1991年4月15日PCT提交1990年8月13日PCT公布。 WO91 / 02999 PCT出版物 1991年3月7日公开。公开是使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用液体的液晶显示设备 水晶显示面板。 在TFT基板中，使用Cr或Ta作为栅极端子，铝或主要由铝构成的金属用于从栅极电极延伸的栅极总线，以及用于薄膜电容器的电极（附加电容，存储电容） 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。 还公开了在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

公开(公告)号：US5672523A

公开(公告)日：1997-09-30

申请号：US451209

申请日：1995-05-26

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.

摘要翻译： 本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用该TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示装置。 Cr或Ta用于栅极端子; 铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）; 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。 在用正型光致抗蚀剂形成选择性氧化掩模到铝图案上的所需区域时，为了阳极氧化，在选择性氧化掩模和铝图案之间形成的角度（θ）被制成： 20T（T：正型光致抗蚀剂的膜厚）。 在曝光之前和之后对光致抗蚀剂进行热处理，优选在显影之前进行后处理。 阳极氧化膜在形成后进行热处理，以减少漏电流。

公开(公告)号：US5719408A

公开(公告)日：1998-02-17

申请号：US803011

申请日：1997-02-21

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L27/108 ,  H01L31/036

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： 在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。 本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

公开(公告)号：US5585290A

公开(公告)日：1996-12-17

申请号：US158219

申请日：1993-11-29

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.

摘要翻译： 本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备， 更具体地，涉及能够改善其特性的结构和制造方法。 在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。