公开(公告)号：US07825515B2

公开(公告)日：2010-11-02

申请号：US12206187

申请日：2008-09-08

申请人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

发明人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

IPC分类号： H01L23/48

CPC分类号： H01L21/2855 ,  H01L23/53223 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.

摘要翻译： 半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的源极，漏电极等铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。 当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。

公开(公告)号：US20070096098A1

公开(公告)日：2007-05-03

申请号：US11551301

申请日：2006-10-20

申请人： Nobuaki Ishiga ,  Kensuke Nagayama ,  Kenichi Miyamoto ,  Tadaki Nakahori ,  Kazunori Inoue

发明人： Nobuaki Ishiga ,  Kensuke Nagayama ,  Kenichi Miyamoto ,  Tadaki Nakahori ,  Kazunori Inoue

IPC分类号： H01L29/04

CPC分类号： H01L29/4908 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458

摘要： A conductive structure includes a laminated structure of an upper layer and a lower layer. The lower layer is formed of an aluminum alloy containing at least one kind of Group 8 elements in periodic table. The upper layer is laminated on the lower layer and formed of an aluminum alloy containing at least one kind of Group 8 elements in periodic table and nitrogen.

摘要翻译： 导电结构包括上层和下层的层叠结构。 下层由在周期表中含有至少一种第8族元素的铝合金形成。 上层层叠在下层上，由含有周期表和氮中的至少一种第8族元素的铝合金形成。

公开(公告)号：US20060267120A1

公开(公告)日：2006-11-30

申请号：US11364195

申请日：2006-03-01

申请人： Tadaki Nakahori ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Takuji Yoshida

发明人： Tadaki Nakahori ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Takuji Yoshida

IPC分类号： H01L29/82

CPC分类号： G02F1/133555 ,  G02F1/133371 ,  G02F1/136227

摘要： A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.

摘要翻译： 液晶装置包括TFT阵列基板，其包括具有栅电极的栅极布线，具有源电极的源极布线，具有栅电极的薄膜晶体管，半导体层，源电极和漏电极，层间绝缘 设置在薄膜晶体管上方的薄膜晶体管和栅极和源极布线的透明像素电极，具有通过接触孔连接到漏极的第一透明导电膜的透明像素电极，并通过设置在像素开口处的像素开口与绝缘基板的表面接触 在栅极绝缘膜和层间绝缘膜中，由连接到漏电极的Al合金制成的反射像素电极和形成在反射电极上的第二透明导电膜。 第二透明导电膜具有与反射像素电极相同的图案形状，并且其厚度为至少5nm。

公开(公告)号：US20060192481A1

公开(公告)日：2006-08-31

申请号：US11299906

申请日：2005-12-13

申请人： Kensuke Nagayama ,  Nobuaki Ishiga ,  Kazunori Inoue ,  Toru Takeguchi ,  Hiroyuki Fuchigami

发明人： Kensuke Nagayama ,  Nobuaki Ishiga ,  Kazunori Inoue ,  Toru Takeguchi ,  Hiroyuki Fuchigami

IPC分类号： H05B33/26 ,  H01L51/50

CPC分类号： H01L51/5218 ,  H01L27/3244 ,  H01L51/5271 ,  H01L2251/5315

摘要： An organic electroluminescence type display apparatus of top emission type, in which a thin film transistor (TFT), a flattening film made of organic resin and an organic EL element, in which at least an anode, an electroluminescence layer and a cathode are laminated on the flattening film in this order, are formed in each picture element in a display region on a substrate. The anode is composed of at least two layer film including an aluminum (Al) alloy film containing as a impurity at least one of transition metals of the eighth group of 3d into Al and including a light transmitting conductive oxide film laminated on the Al alloy film.

摘要翻译： 一种顶发光型有机电致发光型显示装置，其中薄膜晶体管（TFT），由有机树脂制成的平坦化膜和有机EL元件，其中至少阳极，电致发光层和阴极层压在 平坦化膜依次形成在基板上的显示区域中的每个像素中。 阳极由至少两层膜组成，该层包括铝（Al）合金膜，其含有第八组3d的过渡金属作为杂质作为杂质，并且包含层叠在Al合金膜上的透光性导电氧化膜 。

公开(公告)号：US08546804B2

公开(公告)日：2013-10-01

申请号：US13232251

申请日：2011-09-14

申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  G02F1/136

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

公开(公告)号：US20090065942A1

公开(公告)日：2009-03-12

申请号：US12206187

申请日：2008-09-08

申请人： Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

发明人： Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L21/2855 ,  H01L23/53223 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.

摘要翻译： 半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的诸如源电极和漏电极的铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。 当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。

公开(公告)号：US10716218B2

公开(公告)日：2020-07-14

申请号：US13791655

申请日：2013-03-08

申请人： Masami Hayashi ,  Kenichi Miyamoto ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura

发明人： Masami Hayashi ,  Kenichi Miyamoto ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura

IPC分类号： H05K3/06 ,  G06F3/041 ,  H05K1/09 ,  G06F3/044

摘要： A display device is provided with a laminated wiring including a low-resistance conductive film, a low-reflection film mainly containing Al and functioning as a reflection preventing film, and a cap film which are sequentially laminated on a transparent substrate, and an insulting film formed so as to cover the laminated wiring.

公开(公告)号：US20120112194A1

公开(公告)日：2012-05-10

申请号：US13232251

申请日：2011-09-14

申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

IPC分类号： H01L33/08

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

公开(公告)号：US20100053759A1

公开(公告)日：2010-03-04

申请号：US12545217

申请日：2009-08-21

申请人： Kazunori INOUE ,  Naoki TSUMURA ,  Nobuaki ISHIGA ,  Takeshi ONO ,  Naoki NAKAGAWA ,  Masafumi AGARI ,  Yusuke YAMAGATA ,  Kensuke NAGAYAMA

发明人： Kazunori INOUE ,  Naoki TSUMURA ,  Nobuaki ISHIGA ,  Takeshi ONO ,  Naoki NAKAGAWA ,  Masafumi AGARI ,  Yusuke YAMAGATA ,  Kensuke NAGAYAMA

IPC分类号： G02B1/11 ,  B32B5/00 ,  C09D1/00

CPC分类号： G02B1/116 ,  C08K3/08 ,  C09D1/00 ,  C09D7/61 ,  C23C14/0036 ,  C23C14/0641 ,  C23C14/18 ,  G02F1/133502 ,  Y10T428/265

摘要： An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10−2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.

摘要翻译： 在透明基板上形成防反射膜，在550nm波长下透射率低于10％的Al膜，厚度为25nm，主要由铝（Al）构成，形成Al-N膜 在Al膜的上层和下层中的至少一层中，在550nm的波长下具有等于或高于10％的透射率，厚度为25nm，主要由Al组成并且至少含有 氮（N）元素作为添加剂。 抗反射涂膜的电阻率为1.0×10 -2 O·cm以下，Al-N膜的表面的可反射率在可见光区域为50％以下。

公开(公告)号：US20090195151A1

公开(公告)日：2009-08-06

申请号：US12358744

申请日：2009-01-23

申请人： Kensuke Nagayama ,  Kazunori Inoue ,  Nobuaki Ishiga

发明人： Kensuke Nagayama ,  Kazunori Inoue ,  Nobuaki Ishiga

IPC分类号： H01J1/62 ,  C23C14/06

CPC分类号： H01L51/105 ,  H01L27/3244 ,  H01L51/5218 ,  H01L2251/308

摘要： An organic electroluminescence type display apparatus according to an aspect of the present invention includes: a thin film transistor formed on an insulating substrate; and an organic EL device connected to the thin film transistor and including at least an anode, an electroluminescence layer, and a cathode stacked on each other in this order. The anode includes: an Al alloy film having conductivity and including at least one kind of Group 8 3d transition metals, and oxygen, the at least one kind of the Group 8 3d transition metals and the oxygen being added to aluminum; and an amorphous ITO film formed on the Al alloy film.

摘要翻译： 根据本发明的一个方面的有机电致发光型显示装置包括：形成在绝缘基板上的薄膜晶体管; 以及连接到薄膜晶体管并且至少包括依次堆叠的阳极，电致发光层和阴极的有机EL器件。 阳极包括：具有导电性且包括至少一种第8族3d过渡金属的Al合金膜和氧，所述至少一种第8族3d过渡金属和氧被添加到铝中; 以及在Al合金膜上形成的非晶ITO膜。