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公开(公告)号：US08437179B2
公开(公告)日：2013-05-07
申请号：US13528025
申请日：2012-06-20
申请人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
发明人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
IPC分类号： G11C11/40
CPC分类号： G11C11/412 , G11C11/40 , G11C11/413 , G11C11/418 , H01L21/823475 , H01L21/823493 , H01L21/823814 , H01L21/82385 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1104 , H01L27/1116 , H03K19/0016
摘要： The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
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公开(公告)号：US20110215414A1
公开(公告)日：2011-09-08
申请号：US13067177
申请日：2011-05-13
申请人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
发明人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
IPC分类号： H01L27/092
CPC分类号： G11C11/412 , G11C11/40 , G11C11/413 , G11C11/418 , H01L21/823475 , H01L21/823493 , H01L21/823814 , H01L21/82385 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1104 , H01L27/1116 , H03K19/0016
摘要： The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
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公开(公告)号：US07964484B2
公开(公告)日：2011-06-21
申请号：US12457917
申请日：2009-06-25
申请人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
发明人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
IPC分类号： H01L21/425 , H01L29/167
CPC分类号： G11C11/412 , G11C11/40 , G11C11/413 , G11C11/418 , H01L21/823475 , H01L21/823493 , H01L21/823814 , H01L21/82385 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1104 , H01L27/1116 , H03K19/0016
摘要： The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
摘要翻译： 在最新的工艺中，栅极隧道泄漏电流增加，因此需要减小由用于蜂窝电话的电池驱动的LSI中的栅极隧道泄漏电流，并且需要在 待机模式处于低漏电流。 在半导体集成电路器件中，逻辑和存储电路的接地源电极线保持在有源模式的接地电位，并且在未选择待机模式下保持在比地电位高的电压。 可以减少栅极漏电流而不破坏数据。
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公开(公告)号：US20080203437A1
公开(公告)日：2008-08-28
申请号：US12078992
申请日：2008-04-09
申请人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
发明人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
CPC分类号： G11C11/412 , G11C11/40 , G11C11/413 , G11C11/418 , H01L21/823475 , H01L21/823493 , H01L21/823814 , H01L21/82385 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1104 , H01L27/1116 , H03K19/0016
摘要： The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
摘要翻译： 在最新的工艺中，栅极隧道泄漏电流增加，因此需要减小由用于蜂窝电话的电池驱动的LSI中的栅极隧道泄漏电流，并且需要在 待机模式处于低漏电流。 在半导体集成电路器件中，逻辑和存储电路的接地源电极线保持在有源模式的接地电位，并且在未选择待机模式下保持在比地电位高的电压。 可以减少栅极漏电流而不破坏数据。
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公开(公告)号：US20060076610A1
公开(公告)日：2006-04-13
申请号：US11288287
申请日：2005-11-29
申请人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
发明人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
IPC分类号： H01L29/788
CPC分类号： G11C11/412 , G11C11/40 , G11C11/413 , G11C11/418 , H01L21/823475 , H01L21/823493 , H01L21/823814 , H01L21/82385 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1104 , H01L27/1116 , H03K19/0016
摘要： The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
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公开(公告)号：US06998674B2
公开(公告)日：2006-02-14
申请号：US11104488
申请日：2005-04-13
申请人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
发明人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
IPC分类号： H01L29/788 , H01L21/8242
CPC分类号： G11C11/412 , G11C11/40 , G11C11/413 , G11C11/418 , H01L21/823475 , H01L21/823493 , H01L21/823814 , H01L21/82385 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1104 , H01L27/1116 , H03K19/0016
摘要： The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
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公开(公告)号：US07388238B2
公开(公告)日：2008-06-17
申请号：US11452275
申请日：2006-06-14
申请人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
发明人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
IPC分类号： H01L27/10
CPC分类号： G11C11/412 , G11C11/40 , G11C11/413 , G11C11/418 , H01L21/823475 , H01L21/823493 , H01L21/823814 , H01L21/82385 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1104 , H01L27/1116 , H03K19/0016
摘要： The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
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公开(公告)号：US07569881B2
公开(公告)日：2009-08-04
申请号：US12078992
申请日：2008-04-09
申请人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
发明人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
IPC分类号： H01L29/788 , H01L21/8242
CPC分类号： G11C11/412 , G11C11/40 , G11C11/413 , G11C11/418 , H01L21/823475 , H01L21/823493 , H01L21/823814 , H01L21/82385 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1104 , H01L27/1116 , H03K19/0016
摘要： The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
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公开(公告)号：US20060226449A1
公开(公告)日：2006-10-12
申请号：US11452275
申请日：2006-06-14
申请人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
发明人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
CPC分类号： G11C11/412 , G11C11/40 , G11C11/413 , G11C11/418 , H01L21/823475 , H01L21/823493 , H01L21/823814 , H01L21/82385 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1104 , H01L27/1116 , H03K19/0016
摘要： The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
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公开(公告)号：US20050174141A1
公开(公告)日：2005-08-11
申请号：US11104488
申请日：2005-04-13
申请人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
发明人： Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
IPC分类号： G11C11/413 , G11C5/14 , G11C11/41 , G11C11/412 , G11C11/417 , H01L21/8234 , H01L21/8238 , H01L21/8244 , H01L27/088 , H01L27/092 , H01L27/10 , H01L27/11 , H03K19/00 , H03K19/195
CPC分类号： G11C11/412 , G11C11/40 , G11C11/413 , G11C11/418 , H01L21/823475 , H01L21/823493 , H01L21/823814 , H01L21/82385 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1104 , H01L27/1116 , H03K19/0016
摘要： The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
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