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公开(公告)号：US20090191338A1
公开(公告)日：2009-07-30
申请号：US12226217
申请日：2007-04-18
CPC分类号： C23C16/18 , C23C16/4482 , H01L21/28556 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A film-deposition apparatus and a film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method are provided. The film-deposition apparatus for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition apparatus comprises: a process vessel capable of being evacuated; a table on which the object to be processed can be placed, the table being disposed in the process vessel; and a source-gas supply part connected to the process vessel, the source-gas supply part being configured to supply, into the process vessel, a source gas including an organic metal material containing manganese or a metal complex material containing manganese. The film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition method comprises the steps of: placing an object to be processed in an inside of a process vessel capable of being evacuated; and forming a manganese film on a surface of the object to be processed in the process vessel by the CVD method with the use of a source gas including an organic metal material containing manganese or a metal complex material containing manganese.
摘要翻译： 提供了一种通过CVD方法在待处理物体的表面上形成锰膜的成膜装置和膜沉积方法。 用于通过CVD法（化学气相沉积法）在待处理物体的表面上形成锰膜的成膜装置，所述成膜装置包括：能够被抽真空的处理容器; 可以放置待处理对象的工作台，该工作台设置在处理容器中; 以及连接到处理容器的源气供给部，所述源气供给部构成为向所述处理容器供给包含含有锰的有机金属材料或含有锰的金属络合物的源气体。 通过CVD法（化学气相沉积法）在待处理物体的表面上形成锰膜的成膜方法，成膜方法包括以下步骤：将待处理物体放置在 能够被抽真空的处理容器; 以及使用包含含有锰的有机金属材料或含有锰的金属络合物的源气体，通过CVD法在处理容器中的被处理物的表面上形成锰膜。
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公开(公告)号：US20060068103A1
公开(公告)日：2006-03-30
申请号：US11214738
申请日：2005-08-31
IPC分类号： C23C16/00
CPC分类号： H01L21/28556 , C23C16/18 , C23C16/34 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienyltungsten dihydride, a bismethylcyclopentadienyltungsten dihydride, a bisethylcyclopentadienyltungsten dihydride, and a bisisopropylcyclopentadienyltungsten dihydride.
摘要翻译： 提供了能够使用不含卤素的原料的技术，其具有对半导体元件造成不良影响的高可能性，从而容易地形成纯度高的钨膜（硅化钨膜或氮化钨膜） 低温。 提供了一种用于形成钨膜，硅化钨膜或碳酸钨酸盐膜的成膜材料，其中所述膜的W源是一种或多种选自双环戊二烯基二氢钨，二甲基环戊二烯基二氢化钨，双乙基环戊二烯基二氢化钨 和双异丙基环戊二烯基二氢化钨。
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公开(公告)号：US20060068101A1
公开(公告)日：2006-03-30
申请号：US11141615
申请日：2005-06-01
IPC分类号： C23C16/00
CPC分类号： H01L21/28556 , C23C16/18 , C23C16/34 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminoditungsten, a hexaethylmethylaminoditungsten, and a hexadiethylaminoditungsten.
摘要翻译： 提供了能够使用不含卤素的原料的技术，其具有对半导体元件造成不良影响的高可能性，从而容易地形成纯度高的钨膜（硅化钨膜或氮化钨膜） 低温。 提供了一种用于形成钨膜，硅化钨膜或钨酸钠膜的成膜材料，其中所述膜的W源是一种或多种选自六甲基二氨基二钨，六乙基甲基氨基二钨和六
乙基氨基二钨的化合物。-
公开(公告)号：US20050059243A1
公开(公告)日：2005-03-17
申请号：US10895871
申请日：2004-07-22
申请人： Hideaki Machida , Yoshio Ohshita , Masato Ishikawa , Takeshi Kada
发明人： Hideaki Machida , Yoshio Ohshita , Masato Ishikawa , Takeshi Kada
IPC分类号： C23C16/42 , H01L21/28 , H01L21/285 , H01L21/44
CPC分类号： H01L21/28518 , C23C16/42
摘要： A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: General Formula [I] where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10 is H or a hydrocarbon group.
摘要翻译： 提供了通过CVD工艺形成可用于下一代晶体管的硅化物薄膜的技术。 在形成由Ni和Si形成的硅化物膜的技术中，其中使用由以下通式[I]表示的一种或多种化合物作为Ni源：通式[I]其中R1，R2，R3，R4， R5，R6，R7，R8，R9或R10是H或烃基。
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公开(公告)号：US07312140B2
公开(公告)日：2007-12-25
申请号：US11141314
申请日：2005-06-01
IPC分类号： H01L21/44
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature.A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.
摘要翻译： 提供了能够使用不具有卤素的原料的技术，其可能对半导体元件施加不良影响，从而容易地形成纯度高的钼膜（硅化钼膜或氮化钼膜） 低温。 提供了一种用于形成钼膜，硅化钼膜或碳酸钨膜的成膜材料，其中所述膜的Mo源是选自六甲基二甲基氨基钼，六乙基甲基氨基二钼和六
乙基氨基二钼的一种或多种化学化合物。-
公开(公告)号：US20060067230A1
公开(公告)日：2006-03-30
申请号：US11141314
申请日：2005-06-01
IPC分类号： H04J1/16
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.
摘要翻译： 提供了能够使用不具有卤素的原料的技术，其可能对半导体元件施加不良影响，从而容易地形成纯度高的钼膜（硅化钼膜或氮化钼膜） 低温。 提供了一种用于形成钼膜，硅化钼膜或碳酸钨膜的成膜材料，其中所述膜的Mo源是选自六甲基二甲基氨基钼，六乙基甲基氨基二钼和六
乙基氨基二钼的一种或多种化学化合物。-
公开(公告)号：US20060030161A1
公开(公告)日：2006-02-09
申请号：US11117341
申请日：2005-04-29
IPC分类号： H01L21/31
CPC分类号： H01L21/28518 , C23C16/42 , H01L21/28556
摘要： A technique capable of forming an NiSi film having excellent characteristics, which TiSi2 or CoSi2 produced thus far is not able to assume, without damaging a substrate is provided. A film forming material for forming a nickel silicide film or a Nickel film is provided, wherein an Ni source of said film is Ni(PF3)4.
摘要翻译： 提供了能够形成具有优异特性的NiSi膜的技术，其中迄今为止产生的TiSi 2 N 2或CoSi 2 N不能假设，而不损坏基底。 提供了一种用于形成硅化镍膜或镍膜的成膜材料，其中所述膜的Ni源是Ni（PF 3 3）4。
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公开(公告)号：US07045457B2
公开(公告)日：2006-05-16
申请号：US10895871
申请日：2004-07-22
申请人： Hideaki Machida , Yoshio Ohshita , Masato Ishikawa , Takeshi Kada
发明人： Hideaki Machida , Yoshio Ohshita , Masato Ishikawa , Takeshi Kada
IPC分类号： H01L21/4763
CPC分类号： H01L21/28518 , C23C16/42
摘要： A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10 is H or a hydrocarbon group.
摘要翻译： 提供了通过CVD工艺形成可用于下一代晶体管的硅化物薄膜的技术。 在形成由Ni和Si形成的硅化物膜的技术中，其中使用由以下通式[I]表示的一种或多种化合物作为Ni源：其中R 1，R 2 R 2，R 3，R 4，R 5，R 6，R N， R 7，R 9或R 10是H或烃基。
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公开(公告)号：US20060068100A1
公开(公告)日：2006-03-30
申请号：US11141002
申请日：2005-06-01
IPC分类号： C23C16/00
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungsten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienylmolybdenum dihydride, a bismethylcyclopentadienylmolybdenum dihydride, a bisethylcyclopentadienylmolybdenum dihydride, and a bisisopropylcyclopentadienylmolybdenum dihydride.
摘要翻译： 提供了能够使用不具有卤素的原料的技术，其可能对半导体元件施加不良影响，从而容易地形成纯度高的钼膜（硅化钼膜或氮化钼膜） 低温。 提供了用于形成钼膜，硅化钼膜或氮化钨膜的成膜材料，其中所述膜的Mo源是一种或多种选自二环戊二烯基二氢钼，二甲基环戊二烯基钼二氢化物，双乙基环戊二烯基钼二氢化物 ，和二异丙基环戊二烯基二钼酸二甲酯。
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公开(公告)号：US20060029734A1
公开(公告)日：2006-02-09
申请号：US11117399
申请日：2005-04-29
申请人： Hideaki Machida , Takeshi Kada , Masato Ishikawa , Naoto Noda
发明人： Hideaki Machida , Takeshi Kada , Masato Ishikawa , Naoto Noda
IPC分类号： C23C16/00
CPC分类号： C23C16/50 , C23C16/401 , C23C16/44
摘要： A high-quality insulating film is provided, of which a dielectric constant is lower than that of the conventional SiO2, and in which no leak current exceeding 10−8 A/cm2 occurs at the time of a voltage of 20 V. A material for forming a film with a chemical vapor deposition process contains one or more chemical compounds selected from the group belonging to the following [I], and one or more chemical compounds selected from the group belonging to the following [II]: HSi(OCH3)3, H2Si(OCH3)2, and HSi(CH3) (OCH3)2 [I] (CH2═CH)Si(OCH3)3, (CH2═CH)Si(OC2H5)3, (CH2═CH)Si(CH3)(OCH3)2, (CH2═CH)Si(CH3)(OC2H5)2, (CH2=CH)Si(CH3)2(OCH3), and (CH2=CH)Si(CH3)2(OC2H5) [II]
摘要翻译： 提供了一种高质量的绝缘膜，其介电常数低于常规SiO 2的绝缘膜，其中没有超过10 -8 A / cm 2的电压发生在电压为20V的时候。用化学气相沉积工艺形成膜的材料含有一种或多种选自以下[I]的化合物， 和一种或多种选自属于以下[II]的化合物：<？in-line-formula description =“In-line formula”end =“lead”？> HSi（OCH 3） H 3（CH 3）3，H 2 Si（OCH 3）2，和HSi（CH 3） （OCH 3）2 在线公式描述=“在线公式”end =“tail”？> <？ （CH 2）-CH 2 Si（OCH 3 3）3（CH 2）3（CH 2） （CH 2 CH 2）3 Si（OC 2 H 5）3，（CH 3） CH 2 CH（CH 3）3（OCH 3）（OCH 3）
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