公开(公告)号：US20090191338A1

公开(公告)日：2009-07-30

申请号：US12226217

申请日：2007-04-18

申请人： Kenji Matsumoto ,  Hiroshi Sato ,  Tatsuya Ohira ,  Hideaki Machida ,  Masato Ishikawa

发明人： Kenji Matsumoto ,  Hiroshi Sato ,  Tatsuya Ohira ,  Hideaki Machida ,  Masato Ishikawa

IPC分类号： C23C16/06 ,  C23C16/54

CPC分类号： C23C16/18 ,  C23C16/4482 ,  H01L21/28556 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A film-deposition apparatus and a film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method are provided. The film-deposition apparatus for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition apparatus comprises: a process vessel capable of being evacuated; a table on which the object to be processed can be placed, the table being disposed in the process vessel; and a source-gas supply part connected to the process vessel, the source-gas supply part being configured to supply, into the process vessel, a source gas including an organic metal material containing manganese or a metal complex material containing manganese. The film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition method comprises the steps of: placing an object to be processed in an inside of a process vessel capable of being evacuated; and forming a manganese film on a surface of the object to be processed in the process vessel by the CVD method with the use of a source gas including an organic metal material containing manganese or a metal complex material containing manganese.

摘要翻译： 提供了一种通过CVD方法在待处理物体的表面上形成锰膜的成膜装置和膜沉积方法。 用于通过CVD法（化学气相沉积法）在待处理物体的表面上形成锰膜的成膜装置，所述成膜装置包括：能够被抽真空的处理容器; 可以放置待处理对象的工作台，该工作台设置在处理容器中; 以及连接到处理容器的源气供给部，所述源气供给部构成为向所述处理容器供给包含含有锰的有机金属材料或含有锰的金属络合物的源气体。 通过CVD法（化学气相沉积法）在待处理物体的表面上形成锰膜的成膜方法，成膜方法包括以下步骤：将待处理物体放置在 能够被抽真空的处理容器; 以及使用包含含有锰的有机金属材料或含有锰的金属络合物的源气体，通过CVD法在处理容器中的被处理物的表面上形成锰膜。

公开(公告)号：US20120122289A1

公开(公告)日：2012-05-17

申请号：US13356812

申请日：2012-01-24

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

IPC分类号： H01L21/02

CPC分类号： H01L21/31604 ,  H01L21/3145 ,  H01L28/40

摘要： Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming, on a conductor for serving as one electrode of a capacitor, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor.

摘要翻译： 提供一种具有可形成为薄膜的电介质膜的电容器的半导体器件制造方法，可以在低温下形成，并具有容易控制的特性。 制造方法包括：在用作电容器的一个电极的导体上形成用作电容器的电介质膜的氧化锰膜; 在氧化锰膜上形成用作电容器的另一个电极的导电膜。

公开(公告)号：US08865590B2

公开(公告)日：2014-10-21

申请号：US13378535

申请日：2010-06-16

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/285 ,  H01L21/3105 ,  C23C16/40 ,  C23C16/02

CPC分类号： H01L21/76814 ,  C23C16/02 ,  C23C16/40 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/32051 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76867

摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.

摘要翻译： 公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。 该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜 在亲水化绝缘层的表面上使用含锰材料气体的方法。 因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

公开(公告)号：US08247321B2

公开(公告)日：2012-08-21

申请号：US12864824

申请日：2009-01-20

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

IPC分类号： H01L21/4763

CPC分类号： C23C16/40 ,  C23C28/00 ,  C23C28/322 ,  C23C28/345 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76844

摘要： When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.

摘要翻译： 当在衬底上的层间绝缘膜的暴露表面上形成阻挡膜时，形成有形成在其中的凹部的层间绝缘膜和与下层中的金属布线电连接的金属布线形成在凹部 可以形成具有优异的台阶覆盖的阻挡膜，并且可以抑制布线电阻的增加。 暴露在层间绝缘膜的底面的下铜布线的表面上的氧化膜被还原或边缘化以去除铜布线表面上的氧。 然后，通过供给含有锰并且不含氧的有机金属化合物，在包含氧的区域，例如凹部的侧壁和层间绝缘膜的表面上，选择性地允许产生作为自形成阻挡膜的氧化锰 而在铜布线的表面上不允许生成氧化锰。 此后，铜嵌入凹槽中。

公开(公告)号：US08119510B2

公开(公告)日：2012-02-21

申请号：US12706237

申请日：2010-02-16

申请人： Hiroshi Sato ,  Kenji Matsumoto ,  Hitoshi Itoh

发明人： Hiroshi Sato ,  Kenji Matsumoto ,  Hitoshi Itoh

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205

CPC分类号： H01L21/28194 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： Provided is a manufacturing method of a semiconductor device including a gate insulating film which can be formed into a thin film and of which film composition is easy to be controlled. The manufacturing method includes: forming a manganese oxide film for serving as a gate insulating film on a semiconductor substrate, on which a transistor is formed; forming a conductive film for serving as a gate electrode on the manganese oxide film; and forming a gate electrode and a gate insulating film by processing the conductive film and the manganese oxide film.

摘要翻译： 提供一种半导体器件的制造方法，其包括可以形成为薄膜并且易于控制膜组成的栅极绝缘膜。 制造方法包括：在形成有晶体管的半导体衬底上形成用作栅极绝缘膜的氧化锰膜; 在氧化锰膜上形成用作栅电极的导电膜; 以及通过处理导电膜和氧化锰膜形成栅电极和栅极绝缘膜。

公开(公告)号：US20110049718A1

公开(公告)日：2011-03-03

申请号：US12864824

申请日：2009-01-20

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

IPC分类号： H01L23/48 ,  H01L21/768 ,  B05C13/02

CPC分类号： C23C16/40 ,  C23C28/00 ,  C23C28/322 ,  C23C28/345 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76844

摘要： When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.

摘要翻译： 当在衬底上的层间绝缘膜的暴露表面上形成阻挡膜时，形成有形成在其中的凹部的层间绝缘膜和与下层中的金属布线电连接的金属布线形成在凹部 可以形成具有优异的台阶覆盖的阻挡膜，并且可以抑制布线电阻的增加。 暴露在层间绝缘膜的底面的下铜布线的表面上的氧化膜被还原或边缘化以去除铜布线表面上的氧。 然后，通过供给含有锰并且不含氧的有机金属化合物，在包含氧的区域，例如凹部的侧壁和层间绝缘膜的表面上，选择性地允许产生作为自形成阻挡膜的氧化锰 而在铜布线的表面上不允许生成氧化锰。 此后，铜嵌入凹槽中。

公开(公告)号：US08354337B2

公开(公告)日：2013-01-15

申请号：US12781934

申请日：2010-05-18

申请人： Kenji Matsumoto ,  Hidenori Miyoshi ,  Hitoshi Itoh ,  Hiroshi Sato

发明人： Kenji Matsumoto ,  Hidenori Miyoshi ,  Hitoshi Itoh ,  Hiroshi Sato

IPC分类号： H01L21/44

CPC分类号： C23C16/40 ,  C23C16/45557 ,  C23C16/46 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0231 ,  H01L21/02315 ,  H01L21/28556 ,  H01L21/31604

摘要： [Problems]There is provided a metal oxide film forming method capable of controlling a film thickness of a metal oxide even if the metal oxide is subject to a self-limited thickness.[Means for Solving the Problems]A metal oxide film forming method includes a process (1) of supplying a metal source gas to a surface of a base before a temperature of the base reaches a film formation temperature of a metal oxide film; and a process (2) of setting the temperature of the base to be equal to or higher than the film formation temperature and forming the metal oxide film on the base by making a reaction between the metal source gas supplied to the surface of the base and residual moisture on the surface of the base.

摘要翻译： [问题]提供一种能够控制金属氧化物的膜厚度的金属氧化物膜形成方法，即使金属氧化物受到自限制的厚度。 解决问题的手段金属氧化物膜形成方法包括：在基材的温度达到金属氧化物膜的成膜温度之前，将金属源气体供给到碱的表面的工序（1） 以及将基材的温度设定为成膜温度以上的工序（2），并且通过使供给到基材表面的金属源气体和 底部表面残留的水分。

公开(公告)号：US08314004B2

公开(公告)日：2012-11-20

申请号：US13356812

申请日：2012-01-24

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

IPC分类号： H01L21/20

CPC分类号： H01L21/31604 ,  H01L21/3145 ,  H01L28/40

摘要： Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming, on a conductor for serving as one electrode of a capacitor, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor.

摘要翻译： 提供一种具有可形成为薄膜的电介质膜的电容器的半导体器件制造方法，可以在低温下形成，并具有容易控制的特性。 制造方法包括：在用作电容器的一个电极的导体上形成用作电容器的电介质膜的氧化锰膜; 在氧化锰膜上形成用作电容器的另一个电极的导电膜。

公开(公告)号：US20110237066A1

公开(公告)日：2011-09-29

申请号：US12920701

申请日：2009-02-20

申请人： Hiroshi Sato ,  Hitoshi Itoh ,  Kenji Matsumoto

发明人： Hiroshi Sato ,  Hitoshi Itoh ,  Kenji Matsumoto

IPC分类号： H01L21/768 ,  H01L21/308

CPC分类号： H01L21/67207 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/67253 ,  H01L21/67742 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76858 ,  H01L21/76861 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of the barrier layer or from in the barrier layer onto a surface of the seed layer; supplying a cleaning liquid to the seed layer in order to remove the manganese separated out on the surface of the seed layer by the heating; and after the supply of the cleaning liquid, forming the upper conductive channel mainly made of copper in the recess.

摘要翻译： 本发明是一种制造半导体器件的方法，包括：在形成在衬底表面上的层间绝缘膜中形成凹部，所述凹部被构造成嵌入有主要由铜制成的上部导电沟道，以与下部电连接 导电通道; 提供含锰有机化合物的气体，形成由锰化合物制成的阻挡层，以防止铜向层间绝缘膜扩散，使得阻挡层覆盖层间绝缘膜的暴露表面; 在形成阻挡层之后，向阻挡层供给有机酸，以增加形成阻挡层的锰化合物中的锰的比例; 在供给有机酸之后，在阻挡层的表面上形成主要由铜制成的种子层; 在形成种子层之后，加热衬底以将锰从阻挡层的表面或阻挡层中分离出到种子层的表面上; 向种子层供应清洗液，以便通过加热去除种子层表面上分离的锰; 并且在供应清洁液之后，在凹槽中形成主要由铜制成的上导电通道。

公开(公告)号：US20100323512A1

公开(公告)日：2010-12-23

申请号：US12781934

申请日：2010-05-18

申请人： Kenji Matsumoto ,  Hidenori Miyoshi ,  Hitoshi Itoh ,  Hiroshi Sato

发明人： Kenji Matsumoto ,  Hidenori Miyoshi ,  Hitoshi Itoh ,  Hiroshi Sato

IPC分类号： H01L21/3205

CPC分类号： C23C16/40 ,  C23C16/45557 ,  C23C16/46 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0231 ,  H01L21/02315 ,  H01L21/28556 ,  H01L21/31604

摘要： [Problems] There is provided a metal oxide film forming method capable of controlling a film thickness of a metal oxide even if the metal oxide is subject to a self-limited thickness.[Means for Solving the Problems] A metal oxide film forming method includes a process (1) of supplying a metal source gas to a surface of a base before a temperature of the base reaches a film formation temperature of a metal oxide film; and a process (2) of setting the temperature of the base to be equal to or higher than the film formation temperature and forming the metal oxide film on the base by making a reaction between the metal source gas supplied to the surface of the base and residual moisture on the surface of the base.

摘要翻译： [问题]提供一种能够控制金属氧化物的膜厚度的金属氧化物膜形成方法，即使金属氧化物受到自限制的厚度。 解决问题的手段金属氧化物膜形成方法包括：在基材的温度达到金属氧化物膜的成膜温度之前，将金属源气体供给到碱的表面的工序（1） 以及将基材的温度设定为成膜温度以上的工序（2），并且通过使供给到基材表面的金属源气体和 底部表面残留的水分。