Mapping-projection-type electron beam apparatus for inspecting sample by using electrons reflected from the sample
    2.
    发明授权
    Mapping-projection-type electron beam apparatus for inspecting sample by using electrons reflected from the sample 有权
    用于通过使用从样品反射的电子检查样品的映射投影型电子束装置

    公开(公告)号:US07592586B2

    公开(公告)日:2009-09-22

    申请号:US10543151

    申请日:2004-01-27

    IPC分类号: H01J37/28

    摘要: An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for observing or evaluating a surface of the sample by irradiating the sample with a primary electron beam and forming on a detector an image of reflected electrons emitted from the sample. An electron impact-type detector such as an electron impact-type CCD or an electron impact-type TDI is used as the detector for detecting the reflected electrons. The reflected electrons are selectively detected from an energy difference between the reflected electrons and secondary electrons emitted from the sample. To eliminate charge-up caused on the sample surface by irradiation with the primary electron beam, the surface of the sample is covered with a cover placed above the sample and a gas is supplied to the space above the sample covered with the cover. The gas is brought into contact with the sample surface to reduce charge-up on the sample surface.

    摘要翻译: 提供了能够以高精度和可靠性以高产量检测样品上的图案的缺陷的装置,以及使用该缺陷的半导体制造方法。 电子束装置是用于通过用一次电子束照射样品来观察或评价样品的表面的映射投影型电子束装置,并在检测器上形成从样品发射的反射电子的图像。 作为检测反射电子的检测器,使用电子碰撞型CCD或电子碰撞型TDI等电子轰击型检测器。 从反射电子和从样品发射的二次电子之间的能量差选择性地检测反射电子。 为了通过照射一次电子束来消除样品表面上产生的电荷,样品的表面被放置在样品上方的盖子覆盖,并将气体供应到覆盖有覆盖物的样品上方。 气体与样品表面接触以减少样品表面的充电。