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9 条记录 (耗时 0.03 秒)

    Backside imaging through a doped layer
    2.
    发明授权
    Backside imaging through a doped layer 有权
    通过掺杂层的背面成像

    公开(公告)号：US07479686B2

    公开(公告)日：2009-01-20

    申请号：US11290384

    申请日：2005-11-30

    申请人： Kenneth A Costello ,  Kevin P. Fairbairn ,  David W. Brown ,  Yun Chung ,  Patricia Gober ,  Edward Yin

    发明人： Kenneth A Costello ,  Kevin P. Fairbairn ,  David W. Brown ,  Yun Chung ,  Patricia Gober ,  Edward Yin

    IPC分类号： H01L31/00

    CPC分类号： H01L27/14625 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643

    摘要： Backthinning in an area selective manner is applied to CMOS imaging sensors 12 for use in electron bombarded active pixel array devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels of an active pixel array providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.

    摘要翻译： 以区域选择性方式进行反向应用于用于电子轰击的有源像素阵列器件的CMOS成像传感器12。 进一步的布置导致准直器51的阵列与像素42或有源像素阵列的像素组对齐，从而提供这种图像传感器的改善的图像对比度。 在照明的后表面上提供薄的P掺杂层52提供了扩散屏障，从而提供改进的分辨率和用于参考像素的功能屏蔽。 P掺杂层52的浓度梯度优化了像素阵列处的电子收集。

    Wavelength extension for backthinned silicon image arrays
    6.
    发明授权
    Wavelength extension for backthinned silicon image arrays 有权
    反射硅图像阵列的波长扩展

    公开(公告)号：US06943425B2

    公开(公告)日：2005-09-13

    申请号：US10764049

    申请日：2004-01-23

    申请人： Kenneth A Costello

    发明人： Kenneth A Costello

    IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L27/148 ,  H01L29/732 ,  H01L31/00 ,  H01L31/072

    CPC分类号： H01L27/14643 ,  H01L27/14649 ,  H01L27/14806

    摘要： There is described a back thinned sensor in which a material is added on the front surface to extend the wavelength of the sensor into wavelengths it normally does not reach. In the preferred embodiment, the back-thinned layer comprises silicon and is the base for a CMOS device or a CCD. The photocathode in a night vision device comprises in the preferred unit GaAs.

    摘要翻译： 描述了一种背面薄化传感器，其中在前表面上添加材料以将传感器的波长延伸到通常不能达到的波长。 在优选实施例中，背薄层包括硅，并且是用于CMOS器件或CCD的基极。 夜视装置中的光电阴极包括优选的单元GaAs。

    Backthinned CMOS sensor with low fixed pattern noise
    9.
    发明授权
    Backthinned CMOS sensor with low fixed pattern noise 有权
    背面CMOS传感器，固定模式噪声低

    公开(公告)号：US06969839B2

    公开(公告)日：2005-11-29

    申请号：US10355836

    申请日：2003-01-31

    申请人： Kenneth A Costello

    发明人： Kenneth A Costello

    IPC分类号： H01L27/146 ,  H01L29/74 ,  H01L31/00 ,  H04N20060101

    CPC分类号： H01L27/14643 ,  H01L27/14618 ,  H01L27/1464 ,  H01L2924/0002 ,  H01L2924/00

    摘要： This invention deals with the reduction in fixed pattern noise in backthinned CMOS imagers primarily for use in a vacuum environment. Reduction is achieved by effectively shielding the imager. This is done by depositing a conductive layer on the front surface prior to the attachment of a support member or by incorporating a conductive layer into the die at least extensive with the analog circuitry. This also may be achieved by leaving a void adjacent to the analog circuitry area. This void, filled with air or a vacuum specifies a low dielectric layer over critical analog circuitry. Finally there is extended across the die an adhesive or underfill material after which a support member is placed onto the underfill to provide structure to the die. The underfill and the support layer should have thermal coefficients of expansion that substantially match that of the silicon.

    摘要翻译： 本发明涉及主要用于真空环境的背投CMOS成像器中固定图案噪声的降低。 通过有效地屏蔽成像器来实现减少。 这通过在连接支撑构件之前在前表面上沉积导电层或者通过将模拟电路中至少广泛地结合至管芯中的导电层来实现。 这也可以通过在模拟电路区域附近留下空隙来实现。 这个充满空气或真空的空隙在关键的模拟电路上指定了一个低电介质层。 最后，在模具上延伸有粘合剂或底部填充材料，之后将支撑构件放置在底部填充物上以提供模具的结构。 底部填充物和支撑层应具有与硅基本匹配的热膨胀系数。