-
公开(公告)号：US20050047201A1
公开(公告)日：2005-03-03
申请号：US10649752
申请日：2003-08-27
申请人： Frederick Perner , Kenneth Smith
发明人： Frederick Perner , Kenneth Smith
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： Methods and apparatuses are disclosed for reducing the read time of a memory array. In one embodiment, the method includes: sampling unknown data values from a plurality of memory elements, buffering the unknown values, writing known values to the plurality of memory elements and sampling the known values, and comparing the known values to the buffered values.
摘要翻译： 公开了用于减少存储器阵列的读取时间的方法和装置。 在一个实施例中，该方法包括：从多个存储器元件中采样未知数据值，缓冲未知值，将已知值写入多个存储器元件并对已知值进行采样，以及将已知值与缓冲值进行比较。
-
公开(公告)号：US20050047199A1
公开(公告)日：2005-03-03
申请号：US10649076
申请日：2003-08-27
申请人： Frederick Perner , Kenneth Smith , Thomas Anthony
发明人： Frederick Perner , Kenneth Smith , Thomas Anthony
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： Method and apparatus for coupling conductors in magnetic memory. In some embodiments, the memory element comprises: a first magnetic memory element, a first group of conductors magnetically coupled to the first magnetic memory element, a second magnetic memory element, a second group of conductors magnetically coupled to the second magnetic memory element, where the second magnetic memory element is substantially vertical to the first, and the first and second group of conductors have at least one conductor in common.
-
公开(公告)号：US20050007829A1
公开(公告)日：2005-01-13
申请号：US10614504
申请日：2003-07-07
申请人： Frederick Perner , Kenneth Smith , Corbin Champion
发明人： Frederick Perner , Kenneth Smith , Corbin Champion
CPC分类号： G11C11/14
摘要： A method of performing a read operation from a first memory cell in a memory cell string that includes a first memory cell coupled to a second memory cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first memory cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second memory cells in response to writing the first memory cell to a first state.
摘要翻译： 一种从包括耦合到第二存储单元的第一存储单元的存储单元串中的第一存储单元执行读操作的方法。 所述方法包括向最靠近第一存储器单元的第一存储单元串的第一端提供电压，将第一存储单元串的第一端的接地源提供给第一存储单元串的与第一端相对的第二端，以及确定是否 响应于将第一存储器单元写入第一状态，在第一和第二存储器单元之间的节点处发生电压变化。
-
公开(公告)号：US20050122767A1
公开(公告)日：2005-06-09
申请号：US10727273
申请日：2003-12-03
申请人： Frederick Perner , Jonathan Jedwab , James Davis , David McIntyre , David Banks , Stewart Wyatt , Kenneth Smith
发明人： Frederick Perner , Jonathan Jedwab , James Davis , David McIntyre , David Banks , Stewart Wyatt , Kenneth Smith
IPC分类号： G11C7/04 , G11C11/00 , G11C11/02 , G11C11/15 , G11C29/00 , G11C29/02 , G11C29/04 , G11C29/44 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16 , G11C29/02 , G11C29/026 , G11C29/028
摘要： Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises an array of memory cells configured to provide resistive states, and a read circuit. The read circuit is configured to sense a resistance through a memory cell in the array of memory cells to obtain a sense result and categorize the sense result into one of at least three different categories comprising a middle category situated between the resistive states.
摘要翻译： 本发明的实施例提供一种磁存储器。 在一个实施例中，磁存储器包括被配置为提供电阻状态的存储器单元的阵列和读取电路。 读取电路被配置为感测通过存储器单元阵列中的存储器单元的电阻以获得感测结果，并将感测结果分类为包括位于电阻状态之间的中间类别的至少三个不同类别中的一个。
-
公开(公告)号：US20050073882A1
公开(公告)日：2005-04-07
申请号：US10678555
申请日：2003-10-03
申请人： Kenneth Smith , Frederick Perner
发明人： Kenneth Smith , Frederick Perner
摘要： One embodiment of a magnetic memory includes a magnetic memory stack and a first line adjacent the magnetic memory stack. A second line crosses the first line, and a third line crosses the first line and the second line. The third line is angled relative to the first line and the second line, where the first line, the second line and the third line are configured to produce magnetic fields that set states of the magnetic memory stack.
摘要翻译： 磁存储器的一个实施例包括磁存储器堆叠和与磁存储器堆叠相邻的第一行。 第二行穿过第一行，第三行穿过第一行和第二行。 第三线相对于第一线和第二线成角度，其中第一线，第二线和第三线被配置成产生设定磁存储器堆叠状态的磁场。
-
公开(公告)号：US20050073880A1
公开(公告)日：2005-04-07
申请号：US10680464
申请日：2003-10-07
申请人： Kenneth Smith , Frederick Perner
发明人： Kenneth Smith , Frederick Perner
CPC分类号： H01L27/222 , G11C11/16
摘要： The present invention provides a magnetic memory. In one embodiment, the magnetic memory includes a first line having a first cross-sectional area. A second line is provided having a second cross-sectional area different from the first cross-sectional area. A magnetic memory cell stack is positioned between the first line and the second line.
摘要翻译： 本发明提供一种磁存储器。 在一个实施例中，磁存储器包括具有第一横截面积的第一线。 提供具有不同于第一横截面积的第二横截面积的第二线。 磁存储单元堆叠位于第一线和第二线之间。
-
公开(公告)号：US20050007823A1
公开(公告)日：2005-01-13
申请号：US10614581
申请日：2003-07-07
CPC分类号： G11C11/15
摘要： A data storage device that includes a memory cell string. The memory cell string includes a first memory cell and a second memory cell. The device also includes a circuit coupled to a node between the first memory cell and a second memory cell. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and the first memory cell being written to a first state.
摘要翻译： 一种包括存储单元串的数据存储装置。 存储单元串包括第一存储单元和第二存储单元。 该装置还包括耦合到第一存储单元和第二存储单元之间的节点的电路。 电路被配置为响应于提供给存储器单元串并且第一存储器单元被写入第一状态的电压来检测节点处的电压变化。
-
公开(公告)号：US20050281078A1
公开(公告)日：2005-12-22
申请号：US11211986
申请日：2005-08-25
申请人： Frederick Perner , Kenneth Smith
发明人： Frederick Perner , Kenneth Smith
IPC分类号： G11C11/15 , G11C11/00 , G11C11/14 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16
摘要： Methods and apparatuses are disclosed for communicating data on a chip. In one embodiment, the method includes: reading the data value of a memory element utilizing conductors that are electrically coupled to the memory element, and communicating the value read from the memory element to other locations on chip using write conductors that are magnetically coupled to the memory element.
-
公开(公告)号：US20050102576A1
公开(公告)日：2005-05-12
申请号：US10698896
申请日：2003-10-31
申请人： Frederick Perner , Kenneth Smith
发明人： Frederick Perner , Kenneth Smith
CPC分类号： G11C29/02 , G11C29/026
摘要： A data storage device includes non-volatile memory; and a read circuit for performing multi-sample read operations on the memory during a normal mode of operation. The read circuit includes a digital counter having an output that indicates a single bit (e.g., a sign-bit). The read circuit allows an external device (e.g., a memory tester) to supply test clock pulses to an input of the digital counter during a test mode. The test clock pulses can be counted to determine a state of the digital counter.
摘要翻译： 数据存储装置包括非易失性存储器; 以及用于在正常操作模式期间对存储器执行多样本读取操作的读取电路。 读取电路包括具有指示单个位（例如，符号位）的输出的数字计数器。 读取电路允许外部设备（例如，存储器测试器）在测试模式期间将测试时钟脉冲提供给数字计数器的输入。 可以对测试时钟脉冲进行计数，以确定数字计数器的状态。
-
公开(公告)号：US20050078536A1
公开(公告)日：2005-04-14
申请号：US10675740
申请日：2003-09-30
申请人： Frederick Perner , Kenneth Smith
发明人： Frederick Perner , Kenneth Smith
IPC分类号： G11C11/15 , G11C7/02 , G11C29/02 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C29/02 , G11C7/02 , G11C11/1673 , G11C29/026 , G11C29/028 , G11C2207/2254
摘要： Embodiments of the present invention provide a resistive cross point memory. The resistive cross point memory comprises an array of memory cells and a read circuit. The read circuit is configured to sense a resistance through a memory cell in the array of memory cells to obtain a sense result and calibrate the read circuit based on the sensed result. The read circuit comprises an up/down counter that provides a calibration value to the read circuit.
摘要翻译： 本发明的实施例提供一种电阻式交叉点存储器。 电阻交叉点存储器包括存储器单元阵列和读取电路。 读取电路被配置为感测通过存储器单元阵列中的存储器单元的电阻以获得感测结果，并且基于感测结果来校准读取电路。 读取电路包括向读取电路提供校准值的向上/向下计数器。
-
-
-
-
-
-
-
-
-
搜索结果
92 条记录 (耗时 0.02 秒)
