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1.发明申请LIGHT EMITTING DEVICES HAVING ROUGHENED/REFLECTIVE CONTACTS AND METHODS OF FABRICATING SAME 有权具有粗糙/反射性接触的发光装置及其制造方法公开(公告)号：US20090250716A1
公开(公告)日：2009-10-08
申请号：US12476519
申请日：2009-06-02
CPC分类号： H01L33/42 , H01L24/05 , H01L33/405 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
摘要翻译： 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间，使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。
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2.发明授权Light emitting devices having roughened/reflective contacts and methods of fabricating same 有权具有粗糙/反射触点的发光器件及其制造方法公开(公告)号：US08471269B2
公开(公告)日：2013-06-25
申请号：US13313302
申请日：2011-12-07
IPC分类号： H01L27/15
CPC分类号： H01L33/42 , H01L24/05 , H01L33/405 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
摘要翻译： 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间，使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。
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3.发明授权Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads 有权具有反射接合焊盘的发光器件和制造具有反射接合焊盘的发光器件的方法公开(公告)号：US07557380B2
公开(公告)日：2009-07-07
申请号：US10899793
申请日：2004-07-27
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L24/05 , H01L33/405 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
摘要翻译： 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间，使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。
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4.发明授权Light emitting devices having a roughened reflective bond pad and methods of fabricating light emitting devices having roughened reflective bond pads 有权具有粗糙反射结合焊盘的发光器件和具有粗糙反射接合焊盘的发光器件的制造方法公开(公告)号：US07557379B2
公开(公告)日：2009-07-07
申请号：US12123137
申请日：2008-05-19
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L24/05 , H01L33/405 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
摘要翻译： 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间，使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。
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5.发明申请LIGHT EMITTING DEVICES HAVING A ROUGHENED REFLECTIVE BOND PAD AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING ROUGHENED REFLECTIVE BOND PADS 有权具有粗糙反射粘结垫的发光装置和具有粗糙反射粘结垫的发光装置的制造方法公开(公告)号：US20080217641A1
公开(公告)日：2008-09-11
申请号：US12123137
申请日：2008-05-19
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L24/05 , H01L33/405 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
摘要翻译： 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间，使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。
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6.发明授权Light emitting devices having roughened/reflective contacts and methods of fabricating same 有权具有粗糙/反射触点的发光器件及其制造方法公开(公告)号：US08669563B2
公开(公告)日：2014-03-11
申请号：US12476519
申请日：2009-06-02
IPC分类号： H01L27/15
CPC分类号： H01L33/42 , H01L24/05 , H01L33/405 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
摘要翻译： 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间，使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。
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7.发明申请LIGHT EMITTING DEVICES HAVING ROUGHENED/REFLECTIVE CONTACTS AND METHODS OF FABRICATING SAME 有权具有粗糙/反射性接触的发光装置及其制造方法公开(公告)号：US20120080709A1
公开(公告)日：2012-04-05
申请号：US13313302
申请日：2011-12-07
CPC分类号： H01L33/42 , H01L24/05 , H01L33/405 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
摘要翻译： 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间，使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。
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8.发明申请公开(公告)号：US20120153343A1
公开(公告)日：2012-06-21
申请号：US13406251
申请日：2012-02-27
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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公开(公告)号：USD593968S1
公开(公告)日：2009-06-09
申请号：US29328502
申请日：2008-11-25
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10.发明申请公开(公告)号：US20110008922A1
公开(公告)日：2011-01-13
申请号：US12879692
申请日：2010-09-10
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
IPC分类号： H01L33/36
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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