公开(公告)号：US5405801A

公开(公告)日：1995-04-11

申请号：US25421

申请日：1993-03-01

申请人： Ki-man Han ,  Chang-gyu Hwang ,  Dug-dong Kang ,  Young-Jae Choi ,  Joo-young Yoon

发明人： Ki-man Han ,  Chang-gyu Hwang ,  Dug-dong Kang ,  Young-Jae Choi ,  Joo-young Yoon

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/3215 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70

CPC分类号： H01L27/10852 ,  H01L21/32134 ,  H01L21/32139 ,  H01L21/32155 ,  H01L27/10808 ,  H01L28/84 ,  H01L29/66181 ,  H01L28/86 ,  H01L28/90 ,  Y10S148/016 ,  Y10S148/138

摘要： A method for manufacturing first electrode of a capacitor of a semiconductor device is disclosed. After forming a polycrystalline layer composed of grains with microscopic structure to include an impurity in them, the polycrystalline layer is etched to cut the boundary portions of the grains, thereby allowing the surface of the polycrystalline layer to be rugged. The micro-trenches or micro-pillars are formed by using the oxide layer or an anisotropic etching after exposing the surface of the first rugged polycrystalline layer, and epitaxial grains are formed by epitaxial growth, so that cell capacitance can be further increased. The simple process allows the formation of a reliable semiconductor device having regularity and reproducibility, and capable of increasing and adjusting the cell capacitance easily.

摘要翻译： 公开了一种用于制造半导体器件的电容器的第一电极的方法。 在形成由具有微观结构的晶粒构成的多晶层，在其中含有杂质的情况下，蚀刻多晶层以切割晶粒的边界部分，从而使多晶层的表面变得坚固。 通过在暴露第一坚固多晶层的表面之后使用氧化物层或各向异性蚀刻形成微沟槽或微柱，并且通过外延生长形成外延晶粒，从而可以进一步增加电池电容。 简单的过程允许形成具有规则性和再现性的可靠的半导体器件，并且能够容易地增加和调整电池电容。