CONTROLLER FOR CONTROLLING NON-VOLATILE SEMICONDUCTOR MEMORY AND METHOD OF CONTROLLING NON-VOLATILE SEMICONDUCTOR MEMORY

    公开(公告)号:US20220156182A1

    公开(公告)日:2022-05-19

    申请号:US17590310

    申请日:2022-02-01

    Abstract: According to one embodiment, a write instructing unit instructs a data access unit to write, in a storage area of a data storage unit indicated by a first physical address, write object data, instructs a management information access unit to update address conversion information, and instructs a first access unit to update the first physical address. A compaction unit extracts a physical address of compaction object data, instructs the data access unit to read the compaction object data stored in a storage area of the data storage unit indicated by the physical address, instructs the data access unit to write the compaction object data in a storage area of the data storage unit indicated by a second physical address, instructs the management information access unit to update the address conversion information, and instructs a second access unit to update the second physical address.

    SEMICONDUCTOR MEMORY DEVICE
    6.
    发明申请

    公开(公告)号:US20210296298A1

    公开(公告)日:2021-09-23

    申请号:US17005535

    申请日:2020-08-28

    Abstract: A semiconductor memory device includes a first chip and a second chip overlaid on the first chip. The second chip includes a memory cell array provided between a second semiconductor substrate and the first chip in a first direction, and first and second wires between the memory cell array and the first chip. The memory cell array includes three or more stacked bodies regularly arranged in a second direction perpendicular to the first direction and semiconductor layers extending in the stacked bodies in the first direction. Each of the stacked bodies includes gate electrodes stacked in the first direction. The first and second wires are aligned in the second direction with a gap therebetween.

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