公开(公告)号：US20120009764A1

公开(公告)日：2012-01-12

申请号：US13178232

申请日：2011-07-07

申请人： Kiyohisa ISHIBASHI ,  Atsushi MORIYA ,  Takaaki NODA ,  Kiyohiko MAEDA

发明人： Kiyohisa ISHIBASHI ,  Atsushi MORIYA ,  Takaaki NODA ,  Kiyohiko MAEDA

IPC分类号： H01L21/205 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC分类号： H01L21/02532 ,  C23C16/24 ,  C23C16/4583 ,  H01L21/02381 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/67781

摘要： A method of manufacturing a semiconductor device includes conveying a first substrate provided with an opposing surface having insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface exposed toward the opposing surface of the first substrate, into a process chamber in a state that the second substrate is arranged in to face the opposing surface of the first substrate, and selectively forming a silicon-containing film with a flat surface at least on the semiconductor region of the opposing surface of the first substrate by heating an inside of the process chamber and supplying at least a silicon-containing gas and a chlorine-containing gas into the process chamber.

摘要翻译： 一种制造半导体器件的方法包括：传送具有绝缘体区域的相对表面的第一基板和暴露在绝缘体区域之间的半导体区域和设置有朝向第一基板的相对表面暴露的绝缘体表面的第二基板， 处理室，其处于第二基板布置成面对第一基板的相对表面的状态，并且通过加热至少在第一基板的相对表面的半导体区域上选择性地形成具有平坦表面的含硅膜 处理室的内部，并且至少将含硅气体和含氯气体供应到处理室中。

公开(公告)号：US20120064730A1

公开(公告)日：2012-03-15

申请号：US13301211

申请日：2011-11-21

申请人： Takashi OZAKI ,  Kazuhiro YUASA ,  Kiyohiko MAEDA

发明人： Takashi OZAKI ,  Kazuhiro YUASA ,  Kiyohiko MAEDA

IPC分类号： H01L21/31 ,  C23C16/52 ,  C23C16/455

CPC分类号： H01L21/02238 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67109

摘要： Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates (1) in a process chamber (4), a step for supplying an oxygen-containing gas from the upstream side of the substrates (1) carried in the process chamber (4), a step for supplying a hydrogen-containing gas from at least one location corresponding to a position within the region where substrates (1) are placed in the process chamber (4), a step for oxidizing the substrates (1) by reacting the oxygen-containing gas with the hydrogen-containing gas in the process chamber (4), and a step for carrying the thus-processed substrates (1) out of the process chamber (4).

摘要翻译： 公开了一种半导体器件的制造方法，其包括在处理室（4）中承载多个基板（1）的步骤，从承载的基板（1）的上游侧供给含氧气体的步骤 在处理室（4）中，从对应于在基板（1）被放置在处理室（4）的区域内的位置的至少一个位置供给含氢气体的步骤，用于氧化基板 （1）通过使含氧气体与处理室（4）中的含氢气体反应，以及将处理过的基板（1）从处理室（4）运出的步骤。

公开(公告)号：US20090258504A1

公开(公告)日：2009-10-15

申请号：US12421117

申请日：2009-04-09

申请人： Naoharu NAKAISO ,  Kiyohiko MAEDA ,  Masayuki YAMADA

发明人： Naoharu NAKAISO ,  Kiyohiko MAEDA ,  Masayuki YAMADA

IPC分类号： H01L21/46 ,  C23C16/52 ,  C23C16/46

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/52

摘要： Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device. The substrate processing apparatus includes a reaction vessel configured to process a substrate, a heater configured to heat an inside of the reaction vessel, a gas supply line configured to supply gas into the reaction vessel, a first valve installed at the gas supply line, a flow rate controller installed at the gas supply line, a main exhaust line configured to exhaust the inside of the reaction vessel, a second valve installed at the main exhaust line, a slow exhaust line installed at the main exhaust line, a third valve installed at the slow exhaust line, a throttle part installed at the slow exhaust line, a vacuum pump installed at the main exhaust line, and a controller configured to control the valves and the flow rate controller.

摘要翻译： 提供了一种基板处理装置和半导体装置的制造方法。 基板处理装置包括：配置成对基板进行处理的反应容器，构造成加热反应容器内部的加热器，将气体供给到反应容器内的气体供给管线，设置在气体供给管路上的第一阀， 安装在气体供给管路上的流量控制器，配置成排出反应容器内部的主排气管线，安装在主排气管路上的第二阀，安装在主排气管路上的慢排气管路，安装在主排气管路的第三阀门 慢排气管路，安装在慢排气管路处的节流部件，安装在主排气管线处的真空泵，以及控制器，其被配置为控制阀门和流量控制器。

公开(公告)号：US20090042408A1

公开(公告)日：2009-02-12

申请号：US12187644

申请日：2008-08-07

申请人： Kiyohiko MAEDA

发明人： Kiyohiko MAEDA

IPC分类号： H01L21/318 ,  B05C11/00

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45523

摘要： A semiconductor device manufacturing method comprises a process of forming a film on each of multiple substrates arrayed in a processing chamber by a thermal CVD method by supplying a film forming gas into the processing chamber while heating the interior of the processing chamber, wherein in the film forming process, a cycle is performed one time or multiple times with one cycle including a step of flowing the film forming gas from one end towards the other end along the substrate array direction, and a step of flowing the film forming gas from the other end towards the one end along the substrate array direction, without forming temperature gradient along the substrate array direction in the processing chamber.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在加热所述处理室的内部的同时向所述处理室内供给成膜气体，通过热CVD法在排列在处理室中的多个基板上形成膜的工序， 在一个循环中进行一次或多次循环，包括使成膜气体沿着基板排列方向从一端向另一端流动的步骤，以及使成膜气体从另一端流动的步骤 沿着基板排列方向朝向一端，而不在处理室中沿着基板排列方向形成温度梯度。

公开(公告)号：US20070238292A1

公开(公告)日：2007-10-11

申请号：US11762033

申请日：2007-06-12

申请人： Norikazu MIZUNO ,  Kiyohiko MAEDA

发明人： Norikazu MIZUNO ,  Kiyohiko MAEDA

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/4405 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31116 ,  H01L21/3185 ,  Y10S438/905

摘要： A semiconductor device manufacturing method comprises a first step of forming, by a thermal chemical vapor deposition method, a silicon nitride film on an object disposed in a reaction container, with bis tertiary butyl amino silane and NH3 flowing into the reaction container, and a second step of removing silicon nitride formed in the reaction container, with NF3 gas flowing into the reaction container.

摘要翻译： 半导体器件制造方法包括：通过热化学气相沉积法在设置在反应容器中的物体上形成氮化硅膜的第一步骤，其中使用双叔丁基氨基硅烷和NH 3 N 3 进入反应容器，以及第二步骤，除去流入反应容器中的NF 3 N气体，除去形成在反应容器中的氮化硅。