Thin film transistor and active matrix type display unit production methods therefor
    1.
    发明授权
    Thin film transistor and active matrix type display unit production methods therefor 有权
    薄膜晶体管和有源矩阵型显示单元的生产方法

    公开(公告)号:US06995048B2

    公开(公告)日:2006-02-07

    申请号:US10333194

    申请日:2002-05-16

    IPC分类号: H01L21/00 H01L21/84

    摘要: A first contact hole is formed penetrating a gate insulating film, on which a gate electrode is formed and simultaneously a first contact is formed in the first contact hole. A second contact hole penetrating an interlayer insulating film is formed, and a second contact is formed in the second contact hole. A third contact hole is formed penetrating a planarization film, and an electrode is formed in the third contact hole. By using a plurality of contact holes for electrically connecting the electrode and a semiconductor film, the aspect ratio of each contact hole can be reduced, thereby achieving improvement in yield, high-level integration due to a reduction in difference in area between upper and bottom surfaces of the contact, and other advantageous improvements.

    摘要翻译: 穿过栅极绝缘膜的第一接触孔形成栅电极,同时在第一接触孔中形成第一接触。 形成贯穿层间绝缘膜的第二接触孔,在第二接触孔中形成第二接触。 形成穿透平坦化膜的第三接触孔,并且在第三接触孔中形成电极。 通过使用用于电连接电极和半导体膜的多个接触孔,可以减小每个接触孔的纵横比,从而实现产量的提高,由于上下面积之间的差异减小而导致的高电平整合 接触面,以及其它有利的改进。

    Display units having two insolating films and a planarizing film and
process for producing the same
    2.
    发明授权
    Display units having two insolating films and a planarizing film and process for producing the same 失效
    具有两个绝缘膜和平面化膜的显示单元及其制造方法

    公开(公告)号:US5721601A

    公开(公告)日:1998-02-24

    申请号:US532484

    申请日:1995-09-22

    摘要: A liquid crystal display unit is described, which includes a first substrate, a second substrate opposing to the first substrate, pixel driving elements, first and second insulation layers, a planarizing film and a liquid crystal layer. The pixel driving elements are disposed on the first substrate and between the first and second substrates. The first insulation layer is deposited over the first substrate and the pixel driving elements. The planarizing film is formed on the first insulation layer. This planarizing film provides a substantially flat surface over the first substrate to minimize a height of a step present between an area corresponding to each pixel driving element and an area locating adjacent to the pixel driving element on the first substrate. The second insulation layer is formed on the planarizing film. The display electrodes are formed on the second insulation layer and electrically connected to the pixel driving elements, respectively. The liquid crystal layer is located between the first substrate and said second substrate.

    摘要翻译: 描述了一种液晶显示单元,其包括第一基板,与第一基板相对的第二基板,像素驱动元件,第一和第二绝缘层,平坦化膜和液晶层。 像素驱动元件设置在第一基板上并且在第一和第二基板之间。 第一绝缘层沉积在第一衬底和像素驱动元件上。 平坦化膜形成在第一绝缘层上。 该平坦化膜在第一基板上提供基本上平坦的表面,以使在与每个像素驱动元件相对应的区域和与第一基板上的像素驱动元件相邻定位的区域之间存在的台阶的高度最小化。 第二绝缘层形成在平坦化膜上。 显示电极分别形成在第二绝缘层上并与像素驱动元件电连接。 液晶层位于第一基板和第二基板之间。

    Display device and method for manufacturing the same
    3.
    发明申请
    Display device and method for manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号:US20050140277A1

    公开(公告)日:2005-06-30

    申请号:US11020815

    申请日:2004-12-22

    摘要: A display device having a plurality of pixels and which realizes a color display using emitted light of at least two wavelengths, wherein each pixel has a microresonator structure formed between a lower reflective film formed on a side near a substrate and an upper reflective film formed above the lower reflective film with an organic light emitting element layer therebetween. The lower reflective film is made of a metal thin film and a conductive resonator spacer layer which functions as a first electrode is provided between the lower reflective film and the organic light emitting element layer. A thickness of the conductive resonator spacer layer is changed by changing a number of layers or a number of remaining layers of a transparent conductive metal oxide layer made of ITO and a light transmissive layer 210 made of SiNx or the like corresponding to the light emission wavelength. The thickness can be changed based on the thicknesses of the ITO layer and the SiNx layer to be formed and removed by selectively removing an amorphous ITO layer or SiNx layer at upper layers using a polycrystalline ITO at a lower layer as an etching stopper from above the polycrystalline ITO. Light obtained in the organic light emitting element layer is intensified by the microresonator structure in which the optical length is adjusted by the conductive resonator spacer layer and is emitted to the outside.

    摘要翻译: 一种具有多个像素并且使用至少两个波长的发射光实现彩色显示的显示装置,其中每个像素具有形成在基板附近形成的下反射膜和上面形成的上反射膜之间的微谐振器结构 具有其间的有机发光元件层的下反射膜。 下反射膜由金属薄膜制成,并且在下反射膜和有机发光元件层之间设置用作第一电极的导电谐振器隔离层。 通过改变由ITO制成的透明导电金属氧化物层的数量的层数或多个剩余层和由发光波长对应的SiNx等制成的透光层210来改变导电共振器间隔层的厚度 。 可以基于通过使用下层的多晶ITO作为蚀刻停止层从上方选择性地除去上层的非晶ITO层或SiNx层,基于要形成和除去的ITO层和SiN x层的厚度来改变厚度。 多晶ITO。 在有机发光元件层中获得的光被通过导电谐振器间隔层调整光学长度的微谐振器结构增强并被发射到外部。

    Manufacturing method of semiconductor devices
    4.
    发明授权
    Manufacturing method of semiconductor devices 失效
    半导体器件的制造方法

    公开(公告)号:US5837568A

    公开(公告)日:1998-11-17

    申请号:US763556

    申请日:1996-12-10

    摘要: To provide a manufacturing method of thin film transistors (TFT) using poly-silicone and having an LDD structure. In particular, the LDD sections of the TFTs are formed in an improved method so as to achieve a high throughput and stable performance of the TFTs. To be specific, the LD region is doped at a low concentration in the ion implantation method which includes mass spectrometry because high controllability over a dose is required. On the other hand, the source and drain regions are doped at a higher concentration than the LD region in the ion showering method which does not include mass spectrometry. Using the ion showering method, poly-crystal silicon can be doped such that less doping damage is caused thereto. This makes it possible to apply a lower temperature for annealing, such as RTA, to activate doped impurities so as to prevent the substrate from being curved. Further, combination of the ion implantation method and the showering method achieves a high throughput production of TFTs having stable performance.

    摘要翻译: 提供使用聚硅氧烷并具有LDD结构的薄膜晶体管(TFT)的制造方法。 特别地,TFT的LDD部分以改进的方法形成,以便实现TFT的高吞吐量和稳定的性能。 具体地说,在包括质谱法的离子注入方法中,以低浓度掺杂LD区域,因为需要剂量的高可控性。 另一方面,在不包括质谱法的离子喷淋法中,源极和漏极区域以比LD区域更高的浓度被掺杂。 使用离子喷淋法,可以掺杂多晶硅,使得对其造成较少的掺杂损伤。 这使得可以施加较低的退火温度,例如RTA,以激活掺杂杂质,以防止基板弯曲。 此外,离子注入方法和喷淋方法的组合实现了具有稳定性能的TFT的高产量生产。

    Display device having microresonator structure
    6.
    发明授权
    Display device having microresonator structure 有权
    具有微谐振器结构的显示装置

    公开(公告)号:US07166959B2

    公开(公告)日:2007-01-23

    申请号:US11020815

    申请日:2004-12-22

    摘要: A display device includes a plurality of pixels and realizes a color display using emitted light of at least two wavelengths. Each pixel has a microresonator structure formed between a lower reflective film formed on a side near a substrate and an upper reflective film formed above the lower reflective film with an organic light emitting element layer therebetween. A conductive resonator spacer layer is provided between the lower reflective film and the organic light emitting element layer. Light obtained in the organic light emitting element layer is intensified by the microresonator structure in which the optical length is adjusted by the conductive resonator spacer layer and is emitted to the outside.

    摘要翻译: 显示装置包括多个像素,并且使用至少两个波长的发射光实现彩色显示。 每个像素具有形成在形成在基板附近的一侧的下反射膜和形成在下反射膜之上的上反射膜之间的微谐振器结构,其间具有有机发光元件层。 在下反射膜和有机发光元件层之间设置导电谐振器隔离层。 在有机发光元件层中获得的光被通过导电谐振器间隔层调整光学长度的微谐振器结构增强并被发射到外部。

    Organic electroluminescence display with improved contact characteristics
    8.
    发明授权
    Organic electroluminescence display with improved contact characteristics 有权
    具有改善接触特性的有机电致发光显示

    公开(公告)号:US06794675B1

    公开(公告)日:2004-09-21

    申请号:US09532283

    申请日:2000-03-23

    IPC分类号: H01L3524

    CPC分类号: H01L27/3248

    摘要: In an organic electroluminescence (EL) display, a TFT (40) and an organic EL element (60) are formed on an insulating substrate (10) such as a glass substrate. The contact portion between the first electrode region (e.g. the source 43s) of the active layer (43) of the TFT (40) and the organic EL element (60) is formed of a laminated structure. The laminated structure is formed of the structure stacked in layers with p-si forming the source (43s), a refractory metal (Mo), aluminum, a refractory metal (Mo), and ITO forming the anode 61. The reliable contact between the source 43s and the anode 61 can prevent variations in brightness and early degradation in characteristic of the TFT 40 and the organic EL element 60.

    摘要翻译: 在有机电致发光(EL)显示器中,在诸如玻璃基板的绝缘基板(10)上形成TFT(40)和有机EL元件(60)。 TFT(40)的有源层(43)的第一电极区域(例如源极43s)与有机EL元件(60)之间的接触部分由叠层结构形成。 叠层结构由层叠有p型的层叠结构形成,形成源极(43s),难熔金属(Mo),铝,难熔金属(Mo)和形成阳极61的ITO。 源极43s和阳极61可以防止TFT 40和有机EL元件60的亮度变化和特性的早期劣化。

    Electroluminescence display apparatus

    公开(公告)号:US06727871B1

    公开(公告)日:2004-04-27

    申请号:US09679102

    申请日:2000-10-04

    IPC分类号: G09G330

    摘要: Side faces of anodes have a tapered incline that becomes broader toward a lower layer. Thus, an emissive element layer is smoothly formed on the anodes making it possible to prevent field contraction of the electric field. An EL display apparatus having long life and high yield is provided by preventing the emissive element layer from rupturing between an anode and a cathode and by preventing concentration of the electric field at an upper edge of the anode facing the cathode and localized deterioration in the emissive element layer.

    Electroluminescence display apparatus
    10.
    发明授权
    Electroluminescence display apparatus 有权
    电致发光显示装置

    公开(公告)号:US07173583B2

    公开(公告)日:2007-02-06

    申请号:US10765552

    申请日:2004-01-26

    IPC分类号: G09G3/30

    摘要: Side faces of anodes have a tapered incline that becomes broader toward a lower layer. Thus, an emissive element layer is smoothly formed on the anodes making it possible to prevent field contraction of the electric field. An EL display apparatus having long life and high yield is provided by preventing the emissive element layer from rupturing between an anode and a cathode and by preventing concentration of the electric field at an upper edge of the anode facing the cathode and localized deterioration in the emissive element layer.

    摘要翻译: 阳极的侧面具有向下层变宽的渐缩斜面。 因此,在阳极上平滑地形成发光元件层,使得可以防止电场的场收缩。 通过防止发光元件层在阳极和阴极之间的破裂以及通过防止在面对阴极的阳极的上边缘处的电场浓度以及发射体的局部劣化来提供具有长寿命和高产量的EL显示装置 元素层。