摘要:
A first contact hole is formed penetrating a gate insulating film, on which a gate electrode is formed and simultaneously a first contact is formed in the first contact hole. A second contact hole penetrating an interlayer insulating film is formed, and a second contact is formed in the second contact hole. A third contact hole is formed penetrating a planarization film, and an electrode is formed in the third contact hole. By using a plurality of contact holes for electrically connecting the electrode and a semiconductor film, the aspect ratio of each contact hole can be reduced, thereby achieving improvement in yield, high-level integration due to a reduction in difference in area between upper and bottom surfaces of the contact, and other advantageous improvements.
摘要:
A liquid crystal display unit is described, which includes a first substrate, a second substrate opposing to the first substrate, pixel driving elements, first and second insulation layers, a planarizing film and a liquid crystal layer. The pixel driving elements are disposed on the first substrate and between the first and second substrates. The first insulation layer is deposited over the first substrate and the pixel driving elements. The planarizing film is formed on the first insulation layer. This planarizing film provides a substantially flat surface over the first substrate to minimize a height of a step present between an area corresponding to each pixel driving element and an area locating adjacent to the pixel driving element on the first substrate. The second insulation layer is formed on the planarizing film. The display electrodes are formed on the second insulation layer and electrically connected to the pixel driving elements, respectively. The liquid crystal layer is located between the first substrate and said second substrate.
摘要:
A display device having a plurality of pixels and which realizes a color display using emitted light of at least two wavelengths, wherein each pixel has a microresonator structure formed between a lower reflective film formed on a side near a substrate and an upper reflective film formed above the lower reflective film with an organic light emitting element layer therebetween. The lower reflective film is made of a metal thin film and a conductive resonator spacer layer which functions as a first electrode is provided between the lower reflective film and the organic light emitting element layer. A thickness of the conductive resonator spacer layer is changed by changing a number of layers or a number of remaining layers of a transparent conductive metal oxide layer made of ITO and a light transmissive layer 210 made of SiNx or the like corresponding to the light emission wavelength. The thickness can be changed based on the thicknesses of the ITO layer and the SiNx layer to be formed and removed by selectively removing an amorphous ITO layer or SiNx layer at upper layers using a polycrystalline ITO at a lower layer as an etching stopper from above the polycrystalline ITO. Light obtained in the organic light emitting element layer is intensified by the microresonator structure in which the optical length is adjusted by the conductive resonator spacer layer and is emitted to the outside.
摘要:
To provide a manufacturing method of thin film transistors (TFT) using poly-silicone and having an LDD structure. In particular, the LDD sections of the TFTs are formed in an improved method so as to achieve a high throughput and stable performance of the TFTs. To be specific, the LD region is doped at a low concentration in the ion implantation method which includes mass spectrometry because high controllability over a dose is required. On the other hand, the source and drain regions are doped at a higher concentration than the LD region in the ion showering method which does not include mass spectrometry. Using the ion showering method, poly-crystal silicon can be doped such that less doping damage is caused thereto. This makes it possible to apply a lower temperature for annealing, such as RTA, to activate doped impurities so as to prevent the substrate from being curved. Further, combination of the ion implantation method and the showering method achieves a high throughput production of TFTs having stable performance.
摘要:
A dry etching method includes the steps of etching a transparent electrode film by reactive ion etching with a first etching gas, changing the first etching gas to a second etching gas, and etching the transparent electrode film by reactive ion etching with the second etching gas. A chlorine containing gas is employed as the second etching gas.
摘要:
A display device includes a plurality of pixels and realizes a color display using emitted light of at least two wavelengths. Each pixel has a microresonator structure formed between a lower reflective film formed on a side near a substrate and an upper reflective film formed above the lower reflective film with an organic light emitting element layer therebetween. A conductive resonator spacer layer is provided between the lower reflective film and the organic light emitting element layer. Light obtained in the organic light emitting element layer is intensified by the microresonator structure in which the optical length is adjusted by the conductive resonator spacer layer and is emitted to the outside.
摘要:
An inter-layer insulating film and a gate insulating film which are positioned on the optical path of light from an organic EL element to be externally emitted, for example, located under a transparent electrode, are removed. Because SiO2 films having a refractive index which differs significantly from refractive indexes of other films are used for these films, there was a problem of light attenuation in these layers. Such light attenuation can be reduced by removing these layers located in the region through which light from the organic EL element passes.
摘要:
In an organic electroluminescence (EL) display, a TFT (40) and an organic EL element (60) are formed on an insulating substrate (10) such as a glass substrate. The contact portion between the first electrode region (e.g. the source 43s) of the active layer (43) of the TFT (40) and the organic EL element (60) is formed of a laminated structure. The laminated structure is formed of the structure stacked in layers with p-si forming the source (43s), a refractory metal (Mo), aluminum, a refractory metal (Mo), and ITO forming the anode 61. The reliable contact between the source 43s and the anode 61 can prevent variations in brightness and early degradation in characteristic of the TFT 40 and the organic EL element 60.
摘要:
Side faces of anodes have a tapered incline that becomes broader toward a lower layer. Thus, an emissive element layer is smoothly formed on the anodes making it possible to prevent field contraction of the electric field. An EL display apparatus having long life and high yield is provided by preventing the emissive element layer from rupturing between an anode and a cathode and by preventing concentration of the electric field at an upper edge of the anode facing the cathode and localized deterioration in the emissive element layer.
摘要:
Side faces of anodes have a tapered incline that becomes broader toward a lower layer. Thus, an emissive element layer is smoothly formed on the anodes making it possible to prevent field contraction of the electric field. An EL display apparatus having long life and high yield is provided by preventing the emissive element layer from rupturing between an anode and a cathode and by preventing concentration of the electric field at an upper edge of the anode facing the cathode and localized deterioration in the emissive element layer.