公开(公告)号：US5837568A

公开(公告)日：1998-11-17

申请号：US763556

申请日：1996-12-10

申请人： Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Kiichi Hirano ,  Koji Suzuki ,  Masaru Takeuchi

发明人： Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Kiichi Hirano ,  Koji Suzuki ,  Masaru Takeuchi

IPC分类号： H01L21/223 ,  H01L21/336 ,  H01L29/786 ,  H01L21/339

CPC分类号： H01L29/66757 ,  H01L21/2236 ,  H01L29/78621

摘要： To provide a manufacturing method of thin film transistors (TFT) using poly-silicone and having an LDD structure. In particular, the LDD sections of the TFTs are formed in an improved method so as to achieve a high throughput and stable performance of the TFTs. To be specific, the LD region is doped at a low concentration in the ion implantation method which includes mass spectrometry because high controllability over a dose is required. On the other hand, the source and drain regions are doped at a higher concentration than the LD region in the ion showering method which does not include mass spectrometry. Using the ion showering method, poly-crystal silicon can be doped such that less doping damage is caused thereto. This makes it possible to apply a lower temperature for annealing, such as RTA, to activate doped impurities so as to prevent the substrate from being curved. Further, combination of the ion implantation method and the showering method achieves a high throughput production of TFTs having stable performance.

摘要翻译： 提供使用聚硅氧烷并具有LDD结构的薄膜晶体管（TFT）的制造方法。 特别地，TFT的LDD部分以改进的方法形成，以便实现TFT的高吞吐量和稳定的性能。 具体地说，在包括质谱法的离子注入方法中，以低浓度掺杂LD区域，因为需要剂量的高可控性。 另一方面，在不包括质谱法的离子喷淋法中，源极和漏极区域以比LD区域更高的浓度被掺杂。 使用离子喷淋法，可以掺杂多晶硅，使得对其造成较少的掺杂损伤。 这使得可以施加较低的退火温度，例如RTA，以激活掺杂杂质，以防止基板弯曲。 此外，离子注入方法和喷淋方法的组合实现了具有稳定性能的TFT的高产量生产。

公开(公告)号：US07084052B2

公开(公告)日：2006-08-01

申请号：US10917394

申请日：2004-08-13

申请人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： H01L21/425

CPC分类号： H01L21/02667 ,  G02F1/13454 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

公开(公告)号：US20050014316A1

公开(公告)日：2005-01-20

申请号：US10917394

申请日：2004-08-13

申请人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/30 ,  H01L21/46 ,  H01L21/00

CPC分类号： H01L21/02667 ,  G02F1/13454 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

摘要翻译： 一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于 热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

公开(公告)号：US06790714B2

公开(公告)日：2004-09-14

申请号：US09813866

申请日：2001-03-22

申请人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： H01L2100

CPC分类号： H01L21/02667 ,  G02F1/13454 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

摘要翻译： 一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于 热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

公开(公告)号：US06500704B1

公开(公告)日：2002-12-31

申请号：US09056604

申请日：1998-04-08

申请人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： H01L2184

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

摘要翻译： 一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于 热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

公开(公告)号：US5771110A

公开(公告)日：1998-06-23

申请号：US677424

申请日：1996-07-02

申请人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L27/105

CPC分类号： G02F1/13454 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

摘要翻译： 一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于 热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

公开(公告)号：US5721601A

公开(公告)日：1998-02-24

申请号：US532484

申请日：1995-09-22

申请人： Toshifumi Yamaji ,  Kou Masahara ,  Nobuhiko Oda ,  Koji Suzuki ,  Shiro Nakanishi ,  Hisashi Abe ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto

发明人： Toshifumi Yamaji ,  Kou Masahara ,  Nobuhiko Oda ,  Koji Suzuki ,  Shiro Nakanishi ,  Hisashi Abe ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/136227 ,  G02F2001/133357

摘要： A liquid crystal display unit is described, which includes a first substrate, a second substrate opposing to the first substrate, pixel driving elements, first and second insulation layers, a planarizing film and a liquid crystal layer. The pixel driving elements are disposed on the first substrate and between the first and second substrates. The first insulation layer is deposited over the first substrate and the pixel driving elements. The planarizing film is formed on the first insulation layer. This planarizing film provides a substantially flat surface over the first substrate to minimize a height of a step present between an area corresponding to each pixel driving element and an area locating adjacent to the pixel driving element on the first substrate. The second insulation layer is formed on the planarizing film. The display electrodes are formed on the second insulation layer and electrically connected to the pixel driving elements, respectively. The liquid crystal layer is located between the first substrate and said second substrate.

摘要翻译： 描述了一种液晶显示单元，其包括第一基板，与第一基板相对的第二基板，像素驱动元件，第一和第二绝缘层，平坦化膜和液晶层。 像素驱动元件设置在第一基板上并且在第一和第二基板之间。 第一绝缘层沉积在第一衬底和像素驱动元件上。 平坦化膜形成在第一绝缘层上。 该平坦化膜在第一基板上提供基本上平坦的表面，以使在与每个像素驱动元件相对应的区域和与第一基板上的像素驱动元件相邻定位的区域之间存在的台阶的高度最小化。 第二绝缘层形成在平坦化膜上。 显示电极分别形成在第二绝缘层上并与像素驱动元件电连接。 液晶层位于第一基板和第二基板之间。

公开(公告)号：US5723366A

公开(公告)日：1998-03-03

申请号：US535449

申请日：1995-09-28

申请人： Koji Suzuki ,  Kaoru Takeda ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Koji Suzuki ,  Kaoru Takeda ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： G02F1/1343 ,  H01L21/465

CPC分类号： G02F1/13439

摘要： A dry etching method includes the steps of etching a transparent electrode film by reactive ion etching with a first etching gas, changing the first etching gas to a second etching gas, and etching the transparent electrode film by reactive ion etching with the second etching gas. A chlorine containing gas is employed as the second etching gas.

摘要翻译： 干蚀刻方法包括以下步骤：通过用第一蚀刻气体进行反应离子蚀刻来蚀刻透明电极膜，将第一蚀刻气体改变为第二蚀刻气体，并用第二蚀刻气体通过反应离子蚀刻来蚀刻透明电极膜。 采用含氯气体作为第二蚀刻气体。

公开(公告)号：US5707882A

公开(公告)日：1998-01-13

申请号：US376795

申请日：1995-01-23

申请人： Hiroki Hamada ,  Kiichi Hirano ,  Nobuhiro Gouda ,  Hisashi Abe ,  Eiji Taguchi ,  Nobuhiko Oda ,  Yoshihiro Morimoto

发明人： Hiroki Hamada ,  Kiichi Hirano ,  Nobuhiro Gouda ,  Hisashi Abe ,  Eiji Taguchi ,  Nobuhiko Oda ,  Yoshihiro Morimoto

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84 ,  H01L21/265

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L27/12 ,  G02F1/13454

摘要： A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

摘要翻译： 公开了制造具有特定场效应迁移率的多晶硅膜的方法。 在透明绝缘基板上形成第一多晶硅膜。 硅膜的表面被氧化，在第一多晶硅膜和氧化物层上形成非晶硅膜。 将非晶硅膜进行固相生长工艺以转变为第二多晶硅膜。 通过控制第一和第二多晶硅膜的相对厚度，可以将第二多晶硅膜的场效应迁移率调整到期望值。

公开(公告)号：US06288412B1

公开(公告)日：2001-09-11

申请号：US08974746

申请日：1997-11-19

申请人： Hiroki Hamada ,  Kiichi Hirano ,  Nobuhiro Gouda ,  Hisashi Abe ,  Eiji Taguchi ,  Nobuhiko Oda ,  Yoshihiro Morimoto

发明人： Hiroki Hamada ,  Kiichi Hirano ,  Nobuhiro Gouda ,  Hisashi Abe ,  Eiji Taguchi ,  Nobuhiko Oda ,  Yoshihiro Morimoto

IPC分类号： H01L2900

CPC分类号： H01L21/02667 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/12 ,  H01L29/66757

摘要： A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

摘要翻译： 公开了制造具有特定场效应迁移率的多晶硅膜的方法。 在透明绝缘基板上形成第一多晶硅膜。 硅膜的表面被氧化，在第一多晶硅膜和氧化物层上形成非晶硅膜。 将非晶硅膜进行固相生长工艺以转变为第二多晶硅膜。 通过控制第一和第二多晶硅膜的相对厚度，可以将第二多晶硅膜的场效应迁移率调整到期望值。