公开(公告)号：US06850005B2

公开(公告)日：2005-02-01

申请号：US10627179

申请日：2003-07-24

申请人： Kiyoshi Yoneda ,  Ryuji Nishikawa ,  Koji Suzuki ,  Shinji Ichikawa

发明人： Kiyoshi Yoneda ,  Ryuji Nishikawa ,  Koji Suzuki ,  Shinji Ichikawa

IPC分类号： H05B33/00 ,  H01L27/32 ,  H01L51/52 ,  H01J1/62 ,  H01J63/04

CPC分类号： H01L27/3258 ,  H01L27/3246 ,  H01L51/5237 ,  H01L51/5262 ,  H01L51/5284

摘要： An inter-layer insulating film and a gate insulating film which are positioned on the optical path of light from an organic EL element to be externally emitted, for example, located under a transparent electrode, are removed. Because SiO2 films having a refractive index which differs significantly from refractive indexes of other films are used for these films, there was a problem of light attenuation in these layers. Such light attenuation can be reduced by removing these layers located in the region through which light from the organic EL element passes.

摘要翻译： 位于位于外部发射的有机EL元件的光的光路上的例如位于透明电极下方的层间绝缘膜和栅极绝缘膜被去除。 由于这些膜使用具有与其它膜的折射率显着不同的折射率的SiO 2膜，因此存在这些层中的光衰减的问题。 通过去除位于有机EL元件的光通过的区域中的这些层，可以减少这种光衰减。

公开(公告)号：US20050140277A1

公开(公告)日：2005-06-30

申请号：US11020815

申请日：2004-12-22

申请人： Koji Suzuki ,  Ryuji Nishikawa ,  Kiyoshi Yoneda

发明人： Koji Suzuki ,  Ryuji Nishikawa ,  Kiyoshi Yoneda

IPC分类号： H01L51/50 ,  H01L27/32 ,  H01L51/52 ,  H05B33/00 ,  H05B33/02 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22 ,  H05B33/24 ,  H05B33/28

CPC分类号： H01L51/5265 ,  H01L27/3213 ,  H01L27/3244 ,  H01L51/5215

摘要： A display device having a plurality of pixels and which realizes a color display using emitted light of at least two wavelengths, wherein each pixel has a microresonator structure formed between a lower reflective film formed on a side near a substrate and an upper reflective film formed above the lower reflective film with an organic light emitting element layer therebetween. The lower reflective film is made of a metal thin film and a conductive resonator spacer layer which functions as a first electrode is provided between the lower reflective film and the organic light emitting element layer. A thickness of the conductive resonator spacer layer is changed by changing a number of layers or a number of remaining layers of a transparent conductive metal oxide layer made of ITO and a light transmissive layer 210 made of SiNx or the like corresponding to the light emission wavelength. The thickness can be changed based on the thicknesses of the ITO layer and the SiNx layer to be formed and removed by selectively removing an amorphous ITO layer or SiNx layer at upper layers using a polycrystalline ITO at a lower layer as an etching stopper from above the polycrystalline ITO. Light obtained in the organic light emitting element layer is intensified by the microresonator structure in which the optical length is adjusted by the conductive resonator spacer layer and is emitted to the outside.

摘要翻译： 一种具有多个像素并且使用至少两个波长的发射光实现彩色显示的显示装置，其中每个像素具有形成在基板附近形成的下反射膜和上面形成的上反射膜之间的微谐振器结构 具有其间的有机发光元件层的下反射膜。 下反射膜由金属薄膜制成，并且在下反射膜和有机发光元件层之间设置用作第一电极的导电谐振器隔离层。 通过改变由ITO制成的透明导电金属氧化物层的数量的层数或多个剩余层和由发光波长对应的SiNx等制成的透光层210来改变导电共振器间隔层的厚度 。 可以基于通过使用下层的多晶ITO作为蚀刻停止层从上方选择性地除去上层的非晶ITO层或SiNx层，基于要形成和除去的ITO层和SiN x层的厚度来改变厚度。 多晶ITO。 在有机发光元件层中获得的光被通过导电谐振器间隔层调整光学长度的微谐振器结构增强并被发射到外部。

公开(公告)号：US07166959B2

公开(公告)日：2007-01-23

申请号：US11020815

申请日：2004-12-22

申请人： Koji Suzuki ,  Ryuji Nishikawa ,  Kiyoshi Yoneda

发明人： Koji Suzuki ,  Ryuji Nishikawa ,  Kiyoshi Yoneda

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01J1/64 ,  H01J1/70

CPC分类号： H01L51/5265 ,  H01L27/3213 ,  H01L27/3244 ,  H01L51/5215

摘要： A display device includes a plurality of pixels and realizes a color display using emitted light of at least two wavelengths. Each pixel has a microresonator structure formed between a lower reflective film formed on a side near a substrate and an upper reflective film formed above the lower reflective film with an organic light emitting element layer therebetween. A conductive resonator spacer layer is provided between the lower reflective film and the organic light emitting element layer. Light obtained in the organic light emitting element layer is intensified by the microresonator structure in which the optical length is adjusted by the conductive resonator spacer layer and is emitted to the outside.

摘要翻译： 显示装置包括多个像素，并且使用至少两个波长的发射光实现彩色显示。 每个像素具有形成在形成在基板附近的一侧的下反射膜和形成在下反射膜之上的上反射膜之间的微谐振器结构，其间具有有机发光元件层。 在下反射膜和有机发光元件层之间设置导电谐振器隔离层。 在有机发光元件层中获得的光被通过导电谐振器间隔层调整光学长度的微谐振器结构增强并被发射到外部。

公开(公告)号：US06924508B2

公开(公告)日：2005-08-02

申请号：US10627116

申请日：2003-07-24

申请人： Kiyoshi Yoneda ,  Ryuji Nishikawa

发明人： Kiyoshi Yoneda ,  Ryuji Nishikawa

IPC分类号： H05B33/04 ,  H01J1/62 ,  H01L27/01 ,  H01L27/32 ,  H01L29/04 ,  H01L35/24 ,  H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H05B33/14

CPC分类号： H01L51/5253 ,  H01L27/3244 ,  H01L51/524

摘要： A first moisture blocking layer formed of a silicon type nitride film such as SiNx or the like is formed over the entire surface so as to cover a drain electrode and a source electrode of a TFT. On the first moisture blocking layer, a first planarization film formed of an organic material is provided. On the first planarization film, a second moisture blocking layer formed of SiNx or the like is provided. In the peripheral region, the second moisture blocking layer extends down on the first moisture blocking layer and is connected with the first moisture blocking layer. Also, a sealing glass is bonded to the second moisture blocking layer using the sealing member. By enclosing the first planarization film by the first moisture blocking layer and the second moisture blocking layer, intrusion of external moisture can be effectively prevented.

摘要翻译： 在整个表面上形成由诸如SiNx等的氮化硅膜形成的第一湿气阻挡层，以覆盖TFT的漏电极和源电极。 在第一湿气阻挡层上，提供由有机材料形成的第一平坦化膜。 在第一平面化膜上，设置由SiNx等形成的第二湿气阻挡层。 在周边区域中，第二湿气阻挡层在第一湿气阻挡层上向下延伸并与第一湿气阻挡层连接。 此外，使用密封构件将密封玻璃结合到第二湿气阻挡层。 通过由第一湿气阻挡层和第二湿气阻挡层包围第一平坦化膜，可以有效地防止外部湿气的侵入。

公开(公告)号：US20050035932A1

公开(公告)日：2005-02-17

申请号：US10874760

申请日：2004-06-24

申请人： Ryuji Nishikawa ,  Kiyoshi Yoneda

发明人： Ryuji Nishikawa ,  Kiyoshi Yoneda

IPC分类号： H05B33/08 ,  G09F9/00 ,  G09F9/30 ,  G09G3/20 ,  G09G3/30 ,  G09G3/32 ,  H01J1/62 ,  H01L27/14 ,  H01L27/146 ,  H01L27/32 ,  H01L51/50 ,  H05B33/00 ,  H05B33/10 ,  H05B33/14

CPC分类号： G09G3/3233 ,  G09G2300/0426 ,  G09G2300/08 ,  G09G2320/043 ,  G09G2320/0626 ,  G09G2360/144 ,  G09G2360/145 ,  G09G2360/148 ,  H01L27/3227 ,  H01L27/3269 ,  H01L2251/5315

摘要： This invention provides an organic EL display device automatically correcting light emission intensity of a display portion in accordance with intensity of external light, in which the number of components is reduced and sensitivity in detection of an external light sensor is improved. An organic EL element of top emission type, a driving TFT for driving the organic EL element, which is formed of a TFT of top gate type, and an external light sensor formed of a TFT of bottom gate type are integrally formed on a same glass substrate. Since the external light sensor is formed of a TFT of bottom gate type, external light is not blocked by a gate electrode, thereby improving sensitivity in detection of the external light.

摘要翻译： 本发明提供了一种有机EL显示装置，其根据外部光的强度自动校正显示部分的发光强度，其中部件的数量减少，并且外部光传感器的检测灵敏度得到改善。 顶部发射型的有机EL元件，由顶栅型TFT形成的驱动有机EL元件的驱动TFT和由底栅型TFT形成的外部光传感器一体地形成在同一玻璃上 基质。 由于外部光传感器由底栅型TFT形成，所以外部光不被栅电极阻挡，从而提高了外部光的检测灵敏度。

公开(公告)号：US20050062047A1

公开(公告)日：2005-03-24

申请号：US10945782

申请日：2004-09-21

申请人： Ryuji Nishikawa ,  Kazuhiro Imao ,  Ken Wakita ,  Kiyoshi Yoneda

发明人： Ryuji Nishikawa ,  Kazuhiro Imao ,  Ken Wakita ,  Kiyoshi Yoneda

IPC分类号： H01L51/50 ,  G09F9/30 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L27/1285 ,  H01L27/1296 ,  H01L29/78645 ,  H01L29/78675

摘要： A device has a first transistor and a second transistor wherein a channel length direction of the first transistor extends along a first direction and a channel length direction of the second transistor extends along a second direction intersecting the first direction, and the second transistor is formed on a same substrate as the first transistor. A first channel region and a second channel region are formed in semiconductor layers which are simultaneously formed and a mobility of the semiconductor film has an anisotropy in the first and second directions. With this structure, transistors having different mobilities can be obtained while using the semiconductor films formed on the same substrate and from a same material. For example, it is possible to form a transistor in which a high resistance is required using a semiconductor layer of the same characteristics as that in a transistor in which a high speed operation is desired, on the same substrate and with a minimum area.

摘要翻译： 器件具有第一晶体管和第二晶体管，其中第一晶体管的沟道长度方向沿着第一方向延伸，并且第二晶体管的沟道长度方向沿着与第一方向相交的第二方向延伸，并且第二晶体管形成在 与第一晶体管相同的衬底。 在同时形成的半导体层中形成第一沟道区和第二沟道区，并且半导体膜的迁移率在第一和第二方向上具有各向异性。 利用这种结构，可以在使用形成在同一衬底上的相同材料的半导体膜上获得具有不同迁移率的晶体管。 例如，可以在同一衬底上并且具有最小面积的情况下，使用与需要高速运算的晶体管相同特性的半导体层，形成要求高电阻的晶体管。

公开(公告)号：US5721601A

公开(公告)日：1998-02-24

申请号：US532484

申请日：1995-09-22

申请人： Toshifumi Yamaji ,  Kou Masahara ,  Nobuhiko Oda ,  Koji Suzuki ,  Shiro Nakanishi ,  Hisashi Abe ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto

发明人： Toshifumi Yamaji ,  Kou Masahara ,  Nobuhiko Oda ,  Koji Suzuki ,  Shiro Nakanishi ,  Hisashi Abe ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/136227 ,  G02F2001/133357

摘要： A liquid crystal display unit is described, which includes a first substrate, a second substrate opposing to the first substrate, pixel driving elements, first and second insulation layers, a planarizing film and a liquid crystal layer. The pixel driving elements are disposed on the first substrate and between the first and second substrates. The first insulation layer is deposited over the first substrate and the pixel driving elements. The planarizing film is formed on the first insulation layer. This planarizing film provides a substantially flat surface over the first substrate to minimize a height of a step present between an area corresponding to each pixel driving element and an area locating adjacent to the pixel driving element on the first substrate. The second insulation layer is formed on the planarizing film. The display electrodes are formed on the second insulation layer and electrically connected to the pixel driving elements, respectively. The liquid crystal layer is located between the first substrate and said second substrate.

摘要翻译： 描述了一种液晶显示单元，其包括第一基板，与第一基板相对的第二基板，像素驱动元件，第一和第二绝缘层，平坦化膜和液晶层。 像素驱动元件设置在第一基板上并且在第一和第二基板之间。 第一绝缘层沉积在第一衬底和像素驱动元件上。 平坦化膜形成在第一绝缘层上。 该平坦化膜在第一基板上提供基本上平坦的表面，以使在与每个像素驱动元件相对应的区域和与第一基板上的像素驱动元件相邻定位的区域之间存在的台阶的高度最小化。 第二绝缘层形成在平坦化膜上。 显示电极分别形成在第二绝缘层上并与像素驱动元件电连接。 液晶层位于第一基板和第二基板之间。

公开(公告)号：US5837568A

公开(公告)日：1998-11-17

申请号：US763556

申请日：1996-12-10

申请人： Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Kiichi Hirano ,  Koji Suzuki ,  Masaru Takeuchi

发明人： Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Kiichi Hirano ,  Koji Suzuki ,  Masaru Takeuchi

IPC分类号： H01L21/223 ,  H01L21/336 ,  H01L29/786 ,  H01L21/339

CPC分类号： H01L29/66757 ,  H01L21/2236 ,  H01L29/78621

摘要： To provide a manufacturing method of thin film transistors (TFT) using poly-silicone and having an LDD structure. In particular, the LDD sections of the TFTs are formed in an improved method so as to achieve a high throughput and stable performance of the TFTs. To be specific, the LD region is doped at a low concentration in the ion implantation method which includes mass spectrometry because high controllability over a dose is required. On the other hand, the source and drain regions are doped at a higher concentration than the LD region in the ion showering method which does not include mass spectrometry. Using the ion showering method, poly-crystal silicon can be doped such that less doping damage is caused thereto. This makes it possible to apply a lower temperature for annealing, such as RTA, to activate doped impurities so as to prevent the substrate from being curved. Further, combination of the ion implantation method and the showering method achieves a high throughput production of TFTs having stable performance.

摘要翻译： 提供使用聚硅氧烷并具有LDD结构的薄膜晶体管（TFT）的制造方法。 特别地，TFT的LDD部分以改进的方法形成，以便实现TFT的高吞吐量和稳定的性能。 具体地说，在包括质谱法的离子注入方法中，以低浓度掺杂LD区域，因为需要剂量的高可控性。 另一方面，在不包括质谱法的离子喷淋法中，源极和漏极区域以比LD区域更高的浓度被掺杂。 使用离子喷淋法，可以掺杂多晶硅，使得对其造成较少的掺杂损伤。 这使得可以施加较低的退火温度，例如RTA，以激活掺杂杂质，以防止基板弯曲。 此外，离子注入方法和喷淋方法的组合实现了具有稳定性能的TFT的高产量生产。

公开(公告)号：US5723366A

公开(公告)日：1998-03-03

申请号：US535449

申请日：1995-09-28

申请人： Koji Suzuki ,  Kaoru Takeda ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Koji Suzuki ,  Kaoru Takeda ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： G02F1/1343 ,  H01L21/465

CPC分类号： G02F1/13439

摘要： A dry etching method includes the steps of etching a transparent electrode film by reactive ion etching with a first etching gas, changing the first etching gas to a second etching gas, and etching the transparent electrode film by reactive ion etching with the second etching gas. A chlorine containing gas is employed as the second etching gas.

摘要翻译： 干蚀刻方法包括以下步骤：通过用第一蚀刻气体进行反应离子蚀刻来蚀刻透明电极膜，将第一蚀刻气体改变为第二蚀刻气体，并用第二蚀刻气体通过反应离子蚀刻来蚀刻透明电极膜。 采用含氯气体作为第二蚀刻气体。

公开(公告)号：US06995048B2

公开(公告)日：2006-02-07

申请号：US10333194

申请日：2002-05-16

申请人： Kiyoshi Yoneda ,  Tsutomu Yamada ,  Shinji Yuda ,  Koji Suzuki

发明人： Kiyoshi Yoneda ,  Tsutomu Yamada ,  Shinji Yuda ,  Koji Suzuki

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136227 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/78621

摘要： A first contact hole is formed penetrating a gate insulating film, on which a gate electrode is formed and simultaneously a first contact is formed in the first contact hole. A second contact hole penetrating an interlayer insulating film is formed, and a second contact is formed in the second contact hole. A third contact hole is formed penetrating a planarization film, and an electrode is formed in the third contact hole. By using a plurality of contact holes for electrically connecting the electrode and a semiconductor film, the aspect ratio of each contact hole can be reduced, thereby achieving improvement in yield, high-level integration due to a reduction in difference in area between upper and bottom surfaces of the contact, and other advantageous improvements.

摘要翻译： 穿过栅极绝缘膜的第一接触孔形成栅电极，同时在第一接触孔中形成第一接触。 形成贯穿层间绝缘膜的第二接触孔，在第二接触孔中形成第二接触。 形成穿透平坦化膜的第三接触孔，并且在第三接触孔中形成电极。 通过使用用于电连接电极和半导体膜的多个接触孔，可以减小每个接触孔的纵横比，从而实现产量的提高，由于上下面积之间的差异减小而导致的高电平整合 接触面，以及其它有利的改进。