公开(公告)号：US08764900B2

公开(公告)日：2014-07-01

申请号：US12310776

申请日：2007-08-20

申请人： Kiyotaka Takano ,  Masahiko Urano ,  Ryoji Hoshi

发明人： Kiyotaka Takano ,  Masahiko Urano ,  Ryoji Hoshi

IPC分类号： C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/203 ,  C30B15/14 ,  C30B29/06

摘要： The present invention provides an apparatus for producing single crystals according to the Czochralski method, the apparatus including a chamber that can be divided into a plurality of chambers; at least one of the plurality of divided chambers having a circulating coolant passage in which a circulating coolant for cooling the chamber circulates; and measuring means that respectively measure an inlet temperature, an outlet temperature, and a circulating coolant flow rate of the circulating coolant in the circulating coolant passage; the apparatus further including a calculating means that calculates a quantity of heat removed from the chamber and/or a proportion of the quantity of removed heat, from the measured values of the inlet temperature, outlet temperature, and circulating coolant flow rate; and a pulling rate control means that controls a pulling rate of the single crystal based on the resulting quantity of removed heat and/or the resulting proportion of the quantity of removed heat. The invention also provides a method for producing single crystals using the apparatus. Thus, an apparatus and a method for producing single crystals are provided for producing single crystals while easily stabilizing the crystal quality.

摘要翻译： 本发明提供了一种根据切克劳斯基法生产单晶的装置，该装置包括可分为多个室的腔室; 所述多个分隔室中的至少一个具有循环冷却剂通道，其中用于冷却所述室的循环冷却剂循环; 以及测量装置，分别测量循环冷却剂通道中循环冷却剂的入口温度，出口温度和循环冷却剂流量; 该装置还包括从入口温度，出口温度和循环冷却剂流量的测量值计算从室除去的热量和/或去除热量的一部分的计算装置; 以及牵引速度控制装置，其基于所得到的去除热量和/或所得到的除热量的比例来控制单晶的拉伸速率。 本发明还提供使用该装置制备单晶的方法。 因此，提供用于制造单晶的装置和方法，以便容易地稳定晶体质量。

公开(公告)号：US20090249995A1

公开(公告)日：2009-10-08

申请号：US12310776

申请日：2007-08-20

申请人： Kiyotaka Takano ,  Masahiko Urano ,  Ryoji Hoshi

发明人： Kiyotaka Takano ,  Masahiko Urano ,  Ryoji Hoshi

IPC分类号： C30B15/20 ,  C30B15/12

CPC分类号： C30B15/203 ,  C30B15/14 ,  C30B29/06

摘要： The present invention provides an apparatus for producing single crystals according to the Czochralski method, the apparatus including a chamber that can be divided into a plurality of chambers; at least one of the plurality of divided chambers having a circulating coolant passage in which a circulating coolant for cooling the chamber circulates; and measuring means that respectively measure an inlet temperature, an outlet temperature, and a circulating coolant flow rate of the circulating coolant in the circulating coolant passage; the apparatus further including a calculating means that calculates a quantity of heat removed from the chamber and/or a proportion of the quantity of removed heat, from the measured values of the inlet temperature, outlet temperature, and circulating coolant flow rate; and a pulling rate control means that controls a pulling rate of the single crystal based on the resulting quantity of removed heat and/or the resulting proportion of the quantity of removed heat. The invention also provides a method for producing single crystals using the apparatus. Thus, an apparatus and a method for producing single crystals are provided for producing single crystals while easily stabilizing the crystal quality.

摘要翻译： 本发明提供了一种根据切克劳斯基法生产单晶的装置，该装置包括可分为多个室的腔室; 所述多个分隔室中的至少一个具有循环冷却剂通道，其中用于冷却所述室的循环冷却剂循环; 以及测量装置，分别测量循环冷却剂通道中循环冷却剂的入口温度，出口温度和循环冷却剂流量; 该装置还包括从入口温度，出口温度和循环冷却剂流量的测量值计算从室除去的热量和/或去除热量的一部分的计算装置; 以及牵引速度控制装置，其基于所得到的去除热量和/或所得到的除热量的比例来控制单晶的拉伸速率。 本发明还提供使用该装置制备单晶的方法。 因此，提供用于制造单晶的装置和方法，以便容易地稳定晶体质量。

公开(公告)号：US09260796B2

公开(公告)日：2016-02-16

申请号：US12448845

申请日：2008-01-10

申请人： Ryoji Hoshi ,  Masahiko Urano ,  Susumu Sonokawa

发明人： Ryoji Hoshi ,  Masahiko Urano ,  Susumu Sonokawa

IPC分类号： C30B15/00 ,  C30B15/26 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

CPC分类号： C30B15/26 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

摘要： A method for measuring a distance between a lower end surface of a heat insulating member and a surface of a raw material melt with a reference reflector provided at a lower end of the heat insulating member which is located above the surface of the raw material melt when a silicon single crystal is pulled up by a Czochralski method while a magnetic field is applied to the raw material melt in a crucible is disclosed. The method comprises the steps of contacting a projection made of quartz, silicon or carbon with the surface of the raw material melt, the projection being longer that the reference reflector and having a length corresponding to an initial distance; electrically detecting the contact between the projection and the melt surface, and observing an initial location of a mirror image of the reference reflector by a camera when the distance between the lower end surface of the heat insulating member and the surface of the raw material melt has been adjusted so as to be the initial distance, the mirror image being reflected on the surface of the raw material melt; and while pulling the silicon single crystal, measuring a travel distance of the mirror image from the initial location by the camera and calculating the distance between the lower end surface of the heat insulating member and the surface of the raw material melt from the initial travel distance of the mirror image.

摘要翻译： 一种用于测量绝热构件的下端表面与原料熔体表面之间的距离的方法，所述参考反射器设置在位于原料熔体表面上方的绝热构件的下端， 公开了在坩埚中对原料熔体施加磁场的情况下，利用切克劳斯基法（Czochralski method）将硅单晶拉伸。 该方法包括以下步骤：将由石英，硅或碳制成的突起与原料熔体的表面接触，突起比参考反射体更长，并具有与初始距离相对应的长度; 电检测突起和熔体表面之间的接触，并且当绝热构件的下端表面与原料熔体表面之间的距离具有相机时，通过相机观察参考反射体的镜像的初始位置 被调整为初始距离，镜像在原料熔体的表面上反射; 并且在拉动硅单晶的同时，通过照相机测量镜像与初始位置的移动距离，并从初始行进距离计算绝热构件的下端表面与原料熔体的表面之间的距离 的镜像。

公开(公告)号：US08885915B2

公开(公告)日：2014-11-11

申请号：US13696772

申请日：2011-04-28

申请人： Kosei Sugawara ,  Masahiko Urano ,  Ryoji Hoshi

发明人： Kosei Sugawara ,  Masahiko Urano ,  Ryoji Hoshi

IPC分类号： G06K9/00 ,  C03B29/06 ,  C30B15/26

CPC分类号： C03B29/06 ,  C30B15/26 ,  C30B29/06

摘要： A method for measuring a distance between a lower end surface of a heat shielding member including a criterion reflector inside a concavity on the lower end surface and a surface of a raw material melt includes: a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the raw material melt in a crucible, measuring the distance between the lower end surface of the heat shielding member and the surface of the raw material melt and observing a position of a mirror image of the criterion reflector with a fixed point observation apparatus; and measuring a movement distance of the mirror image with the apparatus and calculating the distance between the lower end surface of the heat shielding member and the surface of the raw material melt from the movement distance of the image and the measured distance.

摘要翻译： 一种用于测量在下端表面的凹部内的标准反射器和原料熔融物的表面之间的包含标准反射镜的下端面之间的距离的方法包括：通过切克劳斯基法以硅单晶拉伸， 将磁场施加到坩埚中的原料熔体，测量隔热构件的下端面与原料熔融物的表面之间的距离，并用固定点观察标准反射体的镜像位置 观察装置; 并测量该镜像与该设备的运动距离，并根据该图像的移动距离和测量距离计算该热屏蔽构件的下端表面与该原料熔体的表面之间的距离。

公开(公告)号：US20100064964A1

公开(公告)日：2010-03-18

申请号：US12448845

申请日：2008-01-10

申请人： Ryoji Hoshi ,  Masahiko Urano ,  Susumu Sonokawa

发明人： Ryoji Hoshi ,  Masahiko Urano ,  Susumu Sonokawa

IPC分类号： C30B15/00 ,  G06K9/00

CPC分类号： C30B15/26 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

摘要： There is provided in the present invention a method for measuring a distance between a lower end surface of a heat insulating member 14 and a surface of a raw material melt 4 when a silicon single crystal is pulled by a Czochralski method while a magnetic field is applied to a raw material melt 4 in a crucible, a reference reflector 18 being located at the lower end of the heat insulating member 14 which is located above the surface of the raw material melt 4, characterized in that the method includes steps of: actually measuring a distance A between the lower end surface of the heat insulating member and the surface of the raw material melt; observing a location R1 of a mirror image of the reference reflector 18 reflected on the surface of the raw material melt by a fixed-point observing apparatus 19; subsequently measuring a travel distance B of the mirror image by the fixed-point observing apparatus 19 while pulling the silicon single crystal; and calculating the distance between the lower end surface of the heat insulating member and the surface of the raw material melt, from an actually measured value A and the travel distance B of the mirror image. Thereby a method for measuring a distance between a lower end surface of a heat insulating member and a surface of a raw material melt which can stably and more accurately measure the distance between the lower end surface of the heat insulating member and the surface of the raw material melt can be provided.

摘要翻译： 本发明提供了一种在施加磁场时，通过切克劳斯基法（Czochralski）拉动硅单晶时，测量绝热构件14的下端表面与原料熔融物4的表面之间的距离的方法 在坩埚中的原料熔融物4上，参考反射体18位于绝热构件14的位于原料熔融体4的表面上方的下端，其特征在于，该方法包括以下步骤：实际测量 隔热构件的下端面与原料熔融体的表面之间的距离A; 通过定点观察装置19观察在原料熔融物表面上反射的参考反射体18的镜面的位置R1; 随后通过定点观测装置19测量镜像的行进距离B，同时拉动硅单晶; 以及根据实际测量值A和镜像的行进距离B计算隔热构件的下端表面与原料熔体的表面之间的距离。 因此，可以测定绝热部件的下端面与原料熔融体的表面之间的距离的方法，该方法能够稳定且更准确地测定隔热部件的下端面与原料的表面之间的距离 可以提供材料熔体。

公开(公告)号：US20130058540A1

公开(公告)日：2013-03-07

申请号：US13696772

申请日：2011-04-28

申请人： Kosei Sugawara ,  Masahiko Urano ,  Ryoji Hoshi

发明人： Kosei Sugawara ,  Masahiko Urano ,  Ryoji Hoshi

IPC分类号： G06K9/62 ,  C30B15/14

CPC分类号： C03B29/06 ,  C30B15/26 ,  C30B29/06

摘要： A method for measuring a distance between a lower end surface of a heat shielding member including a criterion reflector inside a concavity on the lower end surface and a surface of a raw material melt includes: a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the raw material melt in a crucible, measuring the distance between the lower end surface of the heat shielding member and the surface of the raw material melt and observing a position of a mirror image of the criterion reflector with a fixed point observation apparatus; and measuring a movement distance of the mirror image with the apparatus and calculating the distance between the lower end surface of the heat shielding member and the surface of the raw material melt from the movement distance of the image and the measured distance.

摘要翻译： 一种用于测量在下端表面的凹部内的标准反射器和原料熔融物的表面之间的包含标准反射镜的下端面之间的距离的方法包括：通过切克劳斯基法以硅单晶拉伸， 将磁场施加到坩埚中的原料熔体，测量隔热构件的下端面与原料熔融物的表面之间的距离，并用固定点观察标准反射体的镜像位置 观察装置; 并测量该镜像与该设备的运动距离，并根据该图像的移动距离和测量距离计算该热屏蔽构件的下端表面与该原料熔体的表面之间的距离。

公开(公告)号：US08085985B2

公开(公告)日：2011-12-27

申请号：US12225918

申请日：2007-01-31

申请人： Masahiko Urano ,  Izumi Fusegawa

发明人： Masahiko Urano ,  Izumi Fusegawa

IPC分类号： G06K9/00

CPC分类号： C30B15/305 ,  C30B15/26 ,  C30B30/04

摘要： The present invention is a method for determining a relative distance between a reference member placed above a melt surface and the melt surface upon pulling a silicon single crystal out of a raw material melt in a crucible by a CZ method characterized by at least: pulling the silicon single crystal applying a magnetic field; taking a picture of a real image of the reference member and a mirror image of the reference member reflected on the melt surface with a detector; processing the picture taken of the real image and the mirror image of the reference member as different pictures by separating the picture taken; and calculating the relative distance between the real image and the mirror image of the reference member from the processed pictures to determine the relative distance between the reference member and the melt surface.

摘要翻译： 本发明是一种确定在熔融表面上方的参考构件与熔融物表面之间的相对距离的方法，该参考构件通过CZ方法从坩埚中的原料熔体拉出硅单晶，其特征在于至少：拉动 硅单晶施加磁场; 用检测器拍摄参考构件的真实图像和在熔体表面上反射的参考构件的镜像; 通过分离所拍摄的图片来处理作为不同图像的实际图像和参考构件的镜像; 以及从经处理的图像计算参考构件的实像和镜像之间的相对距离，以确定参考构件和熔体表面之间的相对距离。

公开(公告)号：US5888299A

公开(公告)日：1999-03-30

申请号：US760963

申请日：1996-12-05

申请人： Masahiko Urano ,  Atsushi Ozaki ,  Tomohiro Kakegawa ,  Hideki Nakano

发明人： Masahiko Urano ,  Atsushi Ozaki ,  Tomohiro Kakegawa ,  Hideki Nakano

IPC分类号： C30B15/20 ,  C30B15/26 ,  C30B35/00

CPC分类号： C30B15/20 ,  C30B15/26 ,  Y10T117/1004 ,  Y10T117/1008

摘要： An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt These operations are automatically performed.

摘要翻译： 提供一种能够自动调节熔体表面的初始位置而不需要操作者的装置和方法。 在根据CZ方法使用线作为用于生长硅等单晶的晶种的悬挂器的单晶拉拔器中，检测到晶种的参考位置，使线退绕以降低 该线材从参考位置到距离WX更高的位置，然后在所述参考位置上方向上拉，以便由于连接到其上的单晶体的重量来校正线材的延伸。 此外，将线材保留在熔体上方约十分钟，以由于熔体的热量而提供恒定量的延伸线。这些操作被自动执行。

公开(公告)号：US5879448A

公开(公告)日：1999-03-09

申请号：US883046

申请日：1997-06-26

申请人： Masahiko Urano ,  Yasushi Nakamura ,  Seiichiro Otsuka ,  Eiichi Iino

发明人： Masahiko Urano ,  Yasushi Nakamura ,  Seiichiro Otsuka ,  Eiichi Iino

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/22 ,  C30B15/30 ,  C30B15/32

CPC分类号： C30B15/30 ,  C30B15/22 ,  Y10T117/1032 ,  Y10T117/1072

摘要： A method and an apparatus for pulling a single crystal are disclosed. A first neck portion, a convex portion, and a second neck portion are formed in this order under a seed crystal held by a seed chuck, and subsequent to the second neck portion, a single crystal having a diameter-expanding portion and a straight cylindrical portion is formed. Lifting holders are brought around and in proximity to the second neck portion when the second neck portion rises to a predetermined position during the pulling by the seed chuck. The single crystal and the lifting holders are moved relative to each other in the vertical direction to thereby bring the convex portion into contact with the lifting holders in a resting manner, so that part of a load borne by the seed chuck is shifted to the lifting holders. Subsequently, the pulling operation is performed by the lifting holders. Accordingly, a single crystal having a larger weight can be pulled safely while maintaining high quality.

摘要翻译： 公开了一种拉制单晶的方法和装置。 第一颈部，凸部和第二颈部依次由种子卡盘保持的晶种形成，在第二颈部之后，形成具有直径扩大部和直圆筒状的单晶 形成部分。 当通过种子卡盘拉动时，当第二颈部部分上升到预定位置时，提升架被带到第二颈部的附近并且靠近第二颈部部分。 单晶和提升架在垂直方向上彼此相对移动，从而使凸部以静止的方式与升降保持器接触，使得由种子卡盘承载的负载的一部分转移到提升 持有人 随后，拉升操作由提升保持器进行。 因此，可以在保持高质量的同时安全地拉出重量更大的单晶。

公开(公告)号：US5938841A

公开(公告)日：1999-08-17

申请号：US754784

申请日：1996-11-21

申请人： Kouji Kitagawa ,  Kouji Mizuishi ,  Masahiko Urano ,  Kenji Araki ,  Eiichi Iino ,  Izumi Fusegawa

发明人： Kouji Kitagawa ,  Kouji Mizuishi ,  Masahiko Urano ,  Kenji Araki ,  Eiichi Iino ,  Izumi Fusegawa

IPC分类号： C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/30 ,  Y10S117/917 ,  Y10T117/1032

摘要： A novel device for producing a single crystal by the CZ or MCZ method is provided, which comprising a crucible for containing silicon melt therein, a wire reel and a wire for pulling a single crystal, a motor and a rotation shaft for rotating the crucible, a speed change device being inserted between the motor and the rotation shaft, and, if necessary, a magnetic field generator, by which the magnetic field is applied to the melt. According to the device for producing a single crystal, the rotation accuracy of a crucible can be improved, so that the concentrations of impurities in the pulled single crystal can be highly precisely controlled.

摘要翻译： 提供了一种用于通过CZ或MCZ方法制造单晶的新型装置，其包括用于在其中包含硅熔体的坩埚，用于拉出单晶的线卷轴和线，电动机和用于旋转坩埚的旋转轴， 插入在电机和旋转轴之间的变速装置，如果需要的话，将磁场施加到熔体上的磁场发生器。 根据用于制造单晶的装置，能够提高坩埚的旋转精度，能够高精度地控制拉伸单晶中的杂质浓度。