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公开(公告)号：US4081290A
公开(公告)日：1978-03-28
申请号：US672878
申请日：1976-04-02
CPC分类号： H01L21/00
摘要： Heterodiodes showing excellent potential for use in solar cells and photoelectric devices consist of junctions of p-type indium phosphide and n-type cadmium sulfide. These heterojunctions can be formed either from single crystal or from polycrystalline semiconductor material. The former type junction when incorporated in a solar cell exhibits promise for applications such as in space vehicles. The latter type junction as used in a solar cell has potential for large scale power generation. A chemical vapor deposition process for producing polycrystalline p-type indium phosphide films for incorporation into such a power producing device is disclosed.
摘要翻译： 在太阳能电池和光电器件中显示出极好的潜力的异二极管由p型磷化铟和n型硫化镉的结构组成。 这些异质结可以由单晶或多晶半导体材料形成。 当结合在太阳能电池中时，前一种类型的接头对于诸如太空车辆的应用来说是有希望的。 在太阳能电池中使用的后一种类型的接头具有大规模发电的潜力。 公开了一种用于制造用于结合到这种发电装置中的多晶P型磷化铟膜的化学气相沉积工艺。
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公开(公告)号：US3988172A
公开(公告)日：1976-10-26
申请号：US587042
申请日：1975-06-16
CPC分类号： H01L21/00 , Y10S148/003 , Y10S148/072 , Y10S148/079 , Y10S148/12
摘要： Solar cells showing improved efficiency, amounting to about 14 percent for overall solar power conversion, are obtained by annealing InP/CdS solar cells in a slightly reducing atmosphere for about 15 minutes in a temperature range preferably from about 550.degree. centrigrade to about 600.degree. centigrade. In an annealing temperature range from 400.degree. centigrade to 625.degree. centigrade, an inversely dependent adjustment of annealing time is found desirable. The atmosphere preferably comprises mainly a substantially inert component and typically comprises an H.sub.2 + N.sub.2 mixture, such as forming gas (15% H.sub.2 + 85% N.sub.2).
摘要翻译： 通过在稍微还原的气氛中将InP / CdS太阳能电池退火约15分钟，在优选约550摄氏度至约600摄氏度的温度范围内，可获得总体太阳能转换效率达到约14％的太阳能电池。 。 在退火温度范围从400摄氏度到625摄氏度之间，退火时间的反向调整是可取的。 气氛优选主要包括基本上惰性的组分，并且通常包含H 2 + N 2混合物，例如形成气体（15％H 2 + 85％N 2）。
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3.发明授权Etching of III-V semiconductor materials with H.sub.2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide 失效用H {HD 2 {B S在异二极管的制备中蚀刻III-V半导体材料以促进硫化镉的沉积
公开(公告)号：US4039357A
公开(公告)日：1977-08-02
申请号：US718386
申请日：1976-08-27
申请人： Klaus Jurgen Bachmann , Manfred Hermann Bettini , Ernest Buehler , Joseph Leo Shay , Sigurd Wagner
发明人： Klaus Jurgen Bachmann , Manfred Hermann Bettini , Ernest Buehler , Joseph Leo Shay , Sigurd Wagner
IPC分类号： C30B29/50 , C23C16/02 , H01L21/306 , H01L21/363 , H01L21/365 , H01L29/04 , H01L29/267 , H01L31/04 , H01L31/072 , H01L31/18 , H01L21/205 , H01L21/302 , H01L31/06
CPC分类号： C23C16/0236 , H01L21/02392 , H01L21/02395 , H01L21/02557 , H01L21/02576 , H01L21/02631 , H01L21/30612 , H01L29/04 , H01L29/267 , H01L31/072 , H01L31/18 , Y02E10/50 , Y10S148/065
摘要： A hydrogen transport process for cleaning the surface of an indium or gallium based semiconductor material and for depositing n-type cadmium sulfide on the cleaned semiconductor material is disclosed. The cleaning and deposition can be accomplished in sequence or simultaneously. The process entails adding hydrogen sulfide to a hydrogen gas flow in a chemical vapor deposition process. Single crystalline photovoltaic cells of p-InP/n-CdS with a 13.5% efficiency have been reproducibly fabricated. An efficiency of 4.6% has been obtained with a thin layer polycrystalline p-InP/n-CdS cell. Additionally, a p-GaAs/n-CdS heterodiode cell has been produced.
摘要翻译： 公开了用于清洁铟或镓基半导体材料的表面并用于在清洁的半导体材料上沉积n型硫化镉的氢输送过程。 清洗和沉积可以顺序或同时完成。 该方法需要在化学气相沉积工艺中向氢气流中加入硫化氢。 已经重复制造了具有13.5％效率的p-InP / n-CdS的单晶光伏电池。 利用薄层多晶p-InP / n-CdS电池获得了4.6％的效率。 另外，已经生产了p-GaAs / n-CdS异二极管电池。
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公开(公告)号：US4481069A
公开(公告)日：1984-11-06
申请号：US337231
申请日：1982-01-06
申请人： Bruce H. Chai , Ernest Buehler , John J. Flynn
发明人： Bruce H. Chai , Ernest Buehler , John J. Flynn
CPC分类号： C30B7/00 , C01B25/36 , C30B29/14 , Y10T117/1024 , Y10T117/1096
摘要： Large single crystals of berlinite are grown onto seed crystals by maintaining the crystals at a fixed elevated temperature in a pressure vessel containing a nutrient of coarse berlinite crystalline powder, held at a fixed lower temperature, and a mixture of hydrochloric and phosphoric acids. Because berlinite shows retrograde solubility in the acid mixture, the nutrient goes into solution, and berlinite deposits on the higher-temperature growing crystal. Large single crystals of alpha-gallium orthophosphate may be grown using the same apparatus and a similar process. The resultant crystals may be cut into wafers useful in surface acoustic wave devices.
摘要翻译： 通过将晶体保持在固定的高温下，在含有保持在较低温度下的粗碱性结晶性粉末的压力容器和盐酸和磷酸的混合物中，将大量的贝氏体单晶生长在晶种上。 由于贝氏体在酸性混合物中表现出逆行溶解性，所以营养物质进入溶液中，而柏氏体沉积在高温生长晶体上。 可以使用相同的装置和类似的方法生长正磷酸镓镓的大单晶。 所得到的晶体可以被切成用于表面声波器件的晶片。
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公开(公告)号：US4559208A
公开(公告)日：1985-12-17
申请号：US459448
申请日：1983-01-20
申请人： Bruce H. Chai , Ernest Buehler , John J. Flynn
发明人： Bruce H. Chai , Ernest Buehler , John J. Flynn
CPC分类号： C01B25/36 , C30B29/14 , C30B7/00 , Y10S117/90 , Y10S117/911 , Y10T117/1096
摘要： Large single crystals of berlinite are grown onto seed crystals by maintaining the crystals at a fixed elevated temperature in a pressure vessel containing a nutrient of coarse berlinite crystalline powder, held at a fixed lower temperature, and concentrated phosphoric acid. Because berlinite shows retrograde solubility, the nutrient goes into solution, and berlinite deposits on the higher-temperature growing crystal. The vessel is rocked to promote motion of saturated solution to the crystal and depleted solution to the nutrient. Large single crystals of alpha-gallium orthophosphate may be grown using the same apparatus and a similar process. The resultant crystals may be cut into wafers useful in surface acoustic wave devices.
摘要翻译： 通过将晶体保持在固定的高温下，在含有保持在较低温度下的粗碱性结晶性粉末的压力容器和浓磷酸中，将大量的贝氏体单晶生长在晶种上。 由于贝氏体表现出逆行溶解性，营养物质进入溶液，而柏氏体沉积在高温生长晶体上。 摇动容器以促进饱和溶液运动到晶体和耗尽的营养液。 可以使用相同的装置和类似的方法生长正磷酸镓镓的大单晶。 所得到的晶体可以被切成用于表面声波器件的晶片。
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公开(公告)号：US4382840A
公开(公告)日：1983-05-10
申请号：US230075
申请日：1981-01-30
申请人： Bruce H. Chai , Ernest Buehler , John J. Flynn
发明人： Bruce H. Chai , Ernest Buehler , John J. Flynn
CPC分类号： H03H3/08 , C01B25/36 , C30B29/14 , C30B7/00 , Y10T117/1024 , Y10T117/1096
摘要： Large single crystals of berlinite are grown onto seed crystals by maintaining the crystals at a fixed elevated temperatutre in a pressure vessel containing a nutrient of coarse berlinite crystalline powder, held at a fixed lower temperature, and concentrated phosphoric acid. Because berlinite shows retrograde solubility, the nutrient goes into solution, and berlinite deposits on the higher-temperature growing crystal. The vessel is rocked to promote motion of saturated solution to the crystal and depleted solution to the nutrient. Large single crystals of alpha-gallium orthophoshate may be grown using the same apparatus and a similar process. The resultant crystals may be cut into wafers useful in surface acoustic wave devices.
摘要翻译： 通过将晶体保持在固定的较高温度下，在含有保持在较低温度下的粗碱性结晶性粉末的压力容器和浓磷酸中，将大量的贝氏体单晶生长在晶种上。 由于贝氏体表现出逆行溶解性，营养物质进入溶液，而柏氏体沉积在高温生长晶体上。 摇动容器以促进饱和溶液运动到晶体和耗尽的营养液。 可以使用相同的装置和类似的方法生长大的单晶α-镓正磷酸盐。 所得到的晶体可以被切成用于表面声波器件的晶片。
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公开(公告)号：US4324773A
公开(公告)日：1982-04-13
申请号：US230077
申请日：1981-01-30
申请人： Bruce H. Chai , Ernest Buehler , John J. Flynn
发明人： Bruce H. Chai , Ernest Buehler , John J. Flynn
摘要： Berlinite crystalline powder of uniform particle size and high purity is prepared by repeated thermal cycling to react a mixture of aluminum hydroxide or aluminum oxide and an excess of concentrated phosphoric acid in a sealed pressure vessel. The vessel is preferably held in a horizontal orientation and rotated about a longitudinal axis during the reaction. The product powder is useful in growing large single crystals that have surface acoustic wave applications. Crystalline powder of alpha-gallium orthophosphate may be prepared using the same apparatus and a similar procedure.
摘要翻译： 通过反复热循环在密封的压力容器中反应氢氧化铝或氧化铝和过量的浓磷酸的混合物来制备具有均匀粒度和高纯度的柏木质结晶粉末。 容器优选保持在水平方向并且在反应期间围绕纵向轴线旋转。 该产品粉末可用于生长具有表面声波应用的大单晶。 可以使用相同的装置和类似的方法制备正磷酸镓镓的结晶粉末。
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公开(公告)号：US4578146A
公开(公告)日：1986-03-25
申请号：US489450
申请日：1983-04-28
申请人： Bruce H. Chai , Ernest Buehler , John J. Flynn , Robert C. Morris
发明人： Bruce H. Chai , Ernest Buehler , John J. Flynn , Robert C. Morris
CPC分类号： C30B7/00 , C30B29/14 , Y10S117/90
摘要： A large single crystal of metal orthophosphate is grown from a plurality of seed crystals by first mounting the seed crystals with one planar surface of each seed crystal substantially in contact with a planar surface of an adjoining seed crystal and a second planar surface substantially parallel to a second planar surface of the adjoining seed crystal. By known methods, the seeds are then grown into a large single crystal in an acid medium at elevated temperatures. The process is particularly useful for growing large crystals of berlinite, which can then be cut into wafers useful in surface acoustic wave devices.
摘要翻译： 通过首先将晶种与每个晶种的一个平面表面基本上与邻接晶种的平坦表面接触并且基本上平行于第二平面的第二平面表面，从多个晶种生长大量的正磷酸金属的单晶。 相邻晶种的第二平面。 通过已知的方法，然后将种子在升高的温度下在酸性介质中生长成大的单晶。 该方法对于生长大型贝氏体晶体特别有用，其可以被切割成用于表面声波器件的晶片。
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公开(公告)号：US4554136A
公开(公告)日：1985-11-19
申请号：US481208
申请日：1983-04-01
申请人： Bruce H. Chai , Ernest Buehler , John J. Flynn
发明人： Bruce H. Chai , Ernest Buehler , John J. Flynn
摘要： Berlinite crystalline powder of uniform particle size and high purity is prepared by repeated thermal cycling to react a mixture of aluminum hydroxide or aluminum oxide and an excess of concentrated phosphoric acid in a sealed pressure vessel. The vessel is preferably held in a horizontal orientation and rotated about a longitudinal axis during the reaction. The product powder is useful in growing large single crystals that have surface acoustic wave applications. Crystalline powder of alpha-gallium orthophosphate may be prepared using the same apparatus and a similar procedure.
摘要翻译： 通过反复热循环在密封的压力容器中反应氢氧化铝或氧化铝和过量的浓磷酸的混合物来制备具有均匀粒度和高纯度的柏木质结晶粉末。 容器优选保持在水平方向并且在反应期间围绕纵向轴线旋转。 该产品粉末可用于生长具有表面声波应用的大单晶。 可以使用相同的装置和类似的方法制备正磷酸镓镓的结晶粉末。
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