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1.发明授权
公开(公告)号：US5757243A
公开(公告)日：1998-05-26
申请号：US649884
申请日：1996-05-13
CPC分类号： H03B15/003 , H03D9/06 , H03B2200/0016 , H03B2200/0076 , H03D2200/0076 , H03D2200/0084
摘要： An effective high frequency oscillator is made of a plurality of Josephson devices. A high frequency converter as a high frequency circuit is made of the high frequency oscillator, nonlinear superconductor devices, and transmission line. Josephson devices are connected in parallel to make a superconductor module. Then superconductive modules are connected in series for high frequency via a phase locking circuit such as a thin film type capacitor to make the high frequency oscillator. Consequently, the high frequency oscillator is used as a local oscillator for a frequency converter. The high frequency system comprises a high frequency package housing a high frequency circuit, a cooling unit including a low temperature stage in thermal contact with the high frequency package, and a shielding case for housing the high frequency circuit and the low temperature stage. The high frequency system of the present invention provides a small-sized and power-saving high frequency circuit having operational stability.
摘要翻译： 有效的高频振荡器由多个Josephson器件制成。 作为高频电路的高频变频器由高频振荡器，非线性超导体器件和传输线构成。 约瑟夫森装置并联连接以制造超导体模块。 然后超导模块通过诸如薄膜型电容器之类的锁相电路串联连接成高频振荡器。 因此，高频振荡器用作变频器的本地振荡器。 高频系统包括容纳高频电路的高频封装，包括与高频封装热接触的低温级的冷却单元和用于容纳高频电路和低温级的屏蔽壳。 本发明的高频系统提供了具有操作稳定性的小型和省电的高频电路。
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公开(公告)号：US5047390A
公开(公告)日：1991-09-10
申请号：US413174
申请日：1989-09-27
申请人： Hidetaka Higashino , Koichi Mizuno , Hideaki Adachi , Kentaro Setsune , Akira Enokihara , Shinichiro Hatta , Kiyotaka Wasa , Shigemi Kohiki , Tomoaki Matsushima
发明人： Hidetaka Higashino , Koichi Mizuno , Hideaki Adachi , Kentaro Setsune , Akira Enokihara , Shinichiro Hatta , Kiyotaka Wasa , Shigemi Kohiki , Tomoaki Matsushima
IPC分类号： H01L39/24
CPC分类号： H01L39/2496 , Y10S505/702 , Y10S505/873 , Y10S505/874
摘要： A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.
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3.发明授权High-frequency circuit element in which a resonator and input/ouputs are relatively movable 失效谐振器和输入/输出相对可移动的高频电路元件
公开(公告)号：US6016434A
公开(公告)日：2000-01-18
申请号：US765587
申请日：1996-12-17
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译： PCT No.PCT / JP95 / 01168 Sec。 371日期1996年12月17日第 102（e）日期1996年12月17日PCT提交1995年6月9日PCT公布。 公开号WO95 / 35584 日期1995年12月28日在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。 在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。 其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和 所述输入输出端子（13）形成为相对的。 通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。 此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。
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4.发明授权公开(公告)号：US06360111B1
公开(公告)日：2002-03-19
申请号：US09415117
申请日：1999-10-08
IPC分类号： H01P708
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译： 在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。 在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。 其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和 所述输入输出端子（13）形成为相对的。 通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。 此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。
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5.发明授权Bi-Sr-Ca-Cu-O superconductor junction through a Bi-Sr-Cu-O barrier layer 失效Bi-Sr-Ca-Cu-O超导体结通过Bi-Sr-Cu-O势垒层
公开(公告)号：US5480859A
公开(公告)日：1996-01-02
申请号：US183795
申请日：1994-01-21
CPC分类号： H01L39/2493 , Y10S505/702
摘要： A superconductor device is provided including a base, a base electrode formed on the base which is made of a Bi-system oxide superconductive material containing an alkaline earth metal, a barrier layer formed on the base electrode which is made of Bi--Sr--Cu--O, a counter electrode formed on the barrier layer which is made of a Bi-system oxide superconductive material containing an alkaline earth metal, a contact electrode formed so as contact with the counter electrode, and a separation layer for separating said contact electrode from said base electrode.
摘要翻译： 提供了一种超导体器件，包括基底，形成在基底上的基底电极，其由含有碱土金属的双系氧化物超导材料制成，在基极上形成的阻挡层由Bi-Sr-Cu -O，形成在由含有碱土金属的Bi系氧化物超导材料制成的阻挡层上的对电极，与对电极接触形成的接触电极和用于将接触电极分离的分离层 所述基极。
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6.发明授权High-frequency circuit element having a superconductive resonator tuned by another movable resonator 有权具有由另一可动谐振器调谐的超导谐振器的高频电路元件公开(公告)号：US06360112B1
公开(公告)日：2002-03-19
申请号：US09415153
申请日：1999-10-08
IPC分类号： H01P708
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译： 在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。 在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。 其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和 所述输入输出端子（13）形成为相对的。 通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。 此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。
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公开(公告)号：US5481119A
公开(公告)日：1996-01-02
申请号：US926020
申请日：1992-08-07
CPC分类号： H01L39/2496
摘要： A superconducting element includes a superconducting thin film bridge extending along the surface of a substrate, and a control electrode member for injecting quasi particles into a portion of an intersection region of the superconducting thin film bridge. The intersection region extends across the superconducting thin film bridge in a direction which is perpendicular to the current flow direction of the superconducting thin film bridge. A remaining portion of the intersection region, which is not injected with quasi particles by the control electrode member, operates as a weak-coupling bridge to thereby control the current flow within the superconducting thin film bridge.
摘要翻译： 超导元件包括沿着衬底的表面延伸的超导薄膜电桥，以及用于将准微粒注入到超导薄膜桥的交叉区域的一部分中的控制电极构件。 交叉区域在垂直于超导薄膜桥的电流流动方向的方向上延伸穿过超导薄膜桥。 通过控制电极部件没有注入准粒子的交叉区域的剩余部分作为弱耦合桥作用，从而控制超导薄膜桥内的电流。
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8.发明授权Method for manufacturing thin film oxide superconductors and superconductor devices by X-ray irradiation 失效通过X射线辐射制造薄膜氧化物超导体和超导体器件的方法
公开(公告)号：US5145830A
公开(公告)日：1992-09-08
申请号：US571095
申请日：1991-08-21
申请人： Shigemi Kohiki , Akira Enokihara , Hidetaka Higashino , Shinichiro Hatta , Kentaro Setsune , Kiyotaka Wasa , Takeshi Kamada , Shigenori Hayashi
发明人： Shigemi Kohiki , Akira Enokihara , Hidetaka Higashino , Shinichiro Hatta , Kentaro Setsune , Kiyotaka Wasa , Takeshi Kamada , Shigenori Hayashi
CPC分类号： H01L39/2496 , H01L39/2464 , Y10S505/701 , Y10S505/702 , Y10S505/727
摘要： A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after formation of the thin film. Further, manufacturing methods for superconductive magnetic memory, Josephson device and superconductive transistor are disclosed.
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公开(公告)号：US5869846A
公开(公告)日：1999-02-09
申请号：US621819
申请日：1996-03-22
CPC分类号： H01L39/225 , H01L39/228
摘要： A superconducting junction device which is easily manufactured, multifunctional, and utilizes the superconducting Josephson effects is described. A first junction (Josephson junction) and a second junction (Josephson junction) are disposed o a substrate across a coupling portion of a dielectric. The first junction comprises a first upper electrode, a first barrier layer and a first lower electrode. The second junction comprises a second upper electrode, a second barrier layer and a second lower electrode. The first lower electrode and the second lower electrode are connected in series via a connecting electrode. A superconducting reflecting wall which is connected via the connecting electrode is provided around the two Josephson junctions including the coupling portion.
摘要翻译： 描述了容易制造，多功能并且利用超导约瑟夫逊效应的超导接合装置。 第一结（约瑟夫逊结）和第二结（Josephson结）被布置在跨越电介质的耦合部分的衬底上。 第一结包括第一上电极，第一阻挡层和第一下电极。 第二接头包括第二上电极，第二阻挡层和第二下电极。 第一下电极和第二下电极通过连接电极串联连接。 通过连接电极连接的超导反射壁设置在包括耦合部分的两个约瑟夫逊结周围。
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公开(公告)号：US4980339A
公开(公告)日：1990-12-25
申请号：US223658
申请日：1988-07-25
申请人： Kentaro Setsune , Takeshi Kamada , Hideaki Adachi , Kiyotaka Wasa , Takashi Hirao , Osamu Yamazaki , Hidetaka Higashino
发明人： Kentaro Setsune , Takeshi Kamada , Hideaki Adachi , Kiyotaka Wasa , Takashi Hirao , Osamu Yamazaki , Hidetaka Higashino
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： A superconductor structure of very high performance is realized by forming a crystalline coating on a substrate of semiconductor, etc. and epitaxially depositing a crystalline superconductor film of good quality on this crystalline coating. Especially, CaF.sub.2 crystal and ZrO.sub.2 crystal of CaF.sub.2 crystal structure have latice constants which match well with the substrate such as Si, GaAs, etc. and the superconductor. The crystalline coating may be a perovskite material such as BaTiO.sub.3 when the superconductor is a perovskite material.
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