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公开(公告)号：US4980339A
公开(公告)日：1990-12-25
申请号：US223658
申请日：1988-07-25
申请人： Kentaro Setsune , Takeshi Kamada , Hideaki Adachi , Kiyotaka Wasa , Takashi Hirao , Osamu Yamazaki , Hidetaka Higashino
发明人： Kentaro Setsune , Takeshi Kamada , Hideaki Adachi , Kiyotaka Wasa , Takashi Hirao , Osamu Yamazaki , Hidetaka Higashino
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： A superconductor structure of very high performance is realized by forming a crystalline coating on a substrate of semiconductor, etc. and epitaxially depositing a crystalline superconductor film of good quality on this crystalline coating. Especially, CaF.sub.2 crystal and ZrO.sub.2 crystal of CaF.sub.2 crystal structure have latice constants which match well with the substrate such as Si, GaAs, etc. and the superconductor. The crystalline coating may be a perovskite material such as BaTiO.sub.3 when the superconductor is a perovskite material.
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2.发明授权Method for manufacturing thin film oxide superconductors and superconductor devices by X-ray irradiation 失效通过X射线辐射制造薄膜氧化物超导体和超导体器件的方法
公开(公告)号：US5145830A
公开(公告)日：1992-09-08
申请号：US571095
申请日：1991-08-21
申请人： Shigemi Kohiki , Akira Enokihara , Hidetaka Higashino , Shinichiro Hatta , Kentaro Setsune , Kiyotaka Wasa , Takeshi Kamada , Shigenori Hayashi
发明人： Shigemi Kohiki , Akira Enokihara , Hidetaka Higashino , Shinichiro Hatta , Kentaro Setsune , Kiyotaka Wasa , Takeshi Kamada , Shigenori Hayashi
CPC分类号： H01L39/2496 , H01L39/2464 , Y10S505/701 , Y10S505/702 , Y10S505/727
摘要： A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after formation of the thin film. Further, manufacturing methods for superconductive magnetic memory, Josephson device and superconductive transistor are disclosed.
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公开(公告)号：US5047390A
公开(公告)日：1991-09-10
申请号：US413174
申请日：1989-09-27
申请人： Hidetaka Higashino , Koichi Mizuno , Hideaki Adachi , Kentaro Setsune , Akira Enokihara , Shinichiro Hatta , Kiyotaka Wasa , Shigemi Kohiki , Tomoaki Matsushima
发明人： Hidetaka Higashino , Koichi Mizuno , Hideaki Adachi , Kentaro Setsune , Akira Enokihara , Shinichiro Hatta , Kiyotaka Wasa , Shigemi Kohiki , Tomoaki Matsushima
IPC分类号： H01L39/24
CPC分类号： H01L39/2496 , Y10S505/702 , Y10S505/873 , Y10S505/874
摘要： A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.
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公开(公告)号：US5856204A
公开(公告)日：1999-01-05
申请号：US721976
申请日：1996-09-27
CPC分类号： H01L39/225
摘要： A plurality of single crystal grains made of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 which are heat treated at a temperature that is equal to or higher than the crystallization temperature of an oxide high-temperature superconductor made of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 and are surrounded by a grain boundary are formed on a substrate made of a MgO single crystal. A convex portion having a sectional area of 400 .mu.m.sup.2 or less and a height which is equal to or less than ten times as much as a space between block layers of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 is formed on the upper face portion of the single crystal grain. A first electrode made of Au is formed on the upper face of the convex portion of the single crystal grain, and a second electrode is formed in a region other than the convex portion in the single crystal grain. The first electrode is insulated from the second electrode by an insulating film made of CaF.sub.2.
摘要翻译： 由Bi2Sr2Ca1Cu2O8制成的多个由Bi2Sr2Ca1Cu2O8构成的氧化物高温超导体的晶化温度以上的温度进行热处理并被晶界包围的单晶粒子形成在由 MgO单晶。 在单晶粒的上表面上形成有截面积为400μm或更小的凸部，其高度等于或小于Bi2Sr2Ca1Cu2O8的阻挡层之间的间隔的十倍。 在单晶粒的凸部的上表面上形成由Au构成的第一电极，在单晶粒的凸部以外的区域形成第二电极。 第一电极通过由CaF 2制成的绝缘膜与第二电极绝缘。
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公开(公告)号：US4731172A
公开(公告)日：1988-03-15
申请号：US856783
申请日：1986-04-17
IPC分类号： C23C14/02 , C23C14/08 , C23C14/22 , C23C14/35 , H01L21/314 , H01L21/316 , C23C14/34
CPC分类号： C23C14/225 , C23C14/024 , C23C14/088 , C23C14/352 , H01L21/02197 , H01L21/02266 , H01L21/31691
摘要： A underlying layer of multi-component material of a first formula is deposited on a substrate by controlling the amounts of sputtering materials evaporated respectively from a plurality of sputtering sources. A transition layer of multi-component material is subsequently formed on the underlying layer by controlling the amounts of the sputtering materials so that the transition layer is given a second, variable formula varying in a range from the first formula at the boundary between the underlying layer and the transition layer to a third formula. An overlying layer of multi-component material of the third formula is subsequently formed on the transition layer by controlling the amounts of the sputtering materials. Specifically, the first formula is [Pb.sub.1-(x/100) La.sub.x/100 ][Zr.sub.y/100 Ti.sub.z/100 ].sub.w O.sub.3, in which 10.ltoreq.x.ltoreq.40, y.ltoreq.5, w=1-(x/400) and y+z=100, and the third formula is [Pb.sub.1-(X/100) La.sub.X/100 ] [Zr.sub.Y/100 Ti.sub.Z/100 ].sub.W O.sub.3, in which X.ltoreq.20, 40.ltoreq.Y.ltoreq.90, W=1-(X/400) and Y+Z=100.
摘要翻译： 通过控制分别从多个溅射源蒸发的溅射材料的量，将第一配方的多组分材料的下层沉积在基板上。 随后通过控制溅射材料的量，在底层上形成多组分材料的过渡层，使得过渡层被赋予第二个可变公式，其变化范围从第一公式在下层 和过渡层到第三个公式。 随后通过控制溅射材料的量在过渡层上形成第三配方的多组分材料的上覆层。 具体地说，第一公式为[Pb1-（x / 100）Lax / 100] [Zry / 100Tiz / 100] wO3，其中10≤x≤40，y = 5，w = 1-（ x / 400）和y + z = 100，第三式为[Pb1-（X / 100）LaX / 100] [ZrY / 100TiZ / 100] WO3，其中X = 20,40 <
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6.发明授权
公开(公告)号：US5757243A
公开(公告)日：1998-05-26
申请号：US649884
申请日：1996-05-13
CPC分类号： H03B15/003 , H03D9/06 , H03B2200/0016 , H03B2200/0076 , H03D2200/0076 , H03D2200/0084
摘要： An effective high frequency oscillator is made of a plurality of Josephson devices. A high frequency converter as a high frequency circuit is made of the high frequency oscillator, nonlinear superconductor devices, and transmission line. Josephson devices are connected in parallel to make a superconductor module. Then superconductive modules are connected in series for high frequency via a phase locking circuit such as a thin film type capacitor to make the high frequency oscillator. Consequently, the high frequency oscillator is used as a local oscillator for a frequency converter. The high frequency system comprises a high frequency package housing a high frequency circuit, a cooling unit including a low temperature stage in thermal contact with the high frequency package, and a shielding case for housing the high frequency circuit and the low temperature stage. The high frequency system of the present invention provides a small-sized and power-saving high frequency circuit having operational stability.
摘要翻译： 有效的高频振荡器由多个Josephson器件制成。 作为高频电路的高频变频器由高频振荡器，非线性超导体器件和传输线构成。 约瑟夫森装置并联连接以制造超导体模块。 然后超导模块通过诸如薄膜型电容器之类的锁相电路串联连接成高频振荡器。 因此，高频振荡器用作变频器的本地振荡器。 高频系统包括容纳高频电路的高频封装，包括与高频封装热接触的低温级的冷却单元和用于容纳高频电路和低温级的屏蔽壳。 本发明的高频系统提供了具有操作稳定性的小型和省电的高频电路。
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7.发明授权High-frequency circuit element in which a resonator and input/ouputs are relatively movable 失效谐振器和输入/输出相对可移动的高频电路元件
公开(公告)号：US6016434A
公开(公告)日：2000-01-18
申请号：US765587
申请日：1996-12-17
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译： PCT No.PCT / JP95 / 01168 Sec。 371日期1996年12月17日第 102（e）日期1996年12月17日PCT提交1995年6月9日PCT公布。 公开号WO95 / 35584 日期1995年12月28日在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。 在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。 其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和 所述输入输出端子（13）形成为相对的。 通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。 此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。
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8.发明授权High-frequency circuit element having a superconductive resonator tuned by another movable resonator 有权具有由另一可动谐振器调谐的超导谐振器的高频电路元件公开(公告)号：US06360112B1
公开(公告)日：2002-03-19
申请号：US09415153
申请日：1999-10-08
IPC分类号： H01P708
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译： 在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。 在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。 其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和 所述输入输出端子（13）形成为相对的。 通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。 此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。
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公开(公告)号：US06178339B1
公开(公告)日：2001-01-23
申请号：US08629349
申请日：1996-04-08
IPC分类号： H01P1213
CPC分类号： H01P1/20363 , H01P1/2135 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： A high power filter apparatus which is used in a mobile communication base station or the like is provided wherein the temperature stability and frequency selection are excellent, an insertion loss is small, the size is small, power consumption is low and costs are low. A shield case block comprises signal input and output portions, and a plurality of closed spaces which house a filter element connected between the signal input and output portions. A cooling plate is provide in a heat insulating container which houses the shield case block. The shield case block is fixed to the cooling plate in the thermal contact state. Each filter element is place almost in parallel. A cylindrical hole having an axis which is almost parallel with the face of the filter element penetrates the shield case block. A ground rod made of a conductor which changes the volume of the closed space is provided on the inner end portion of a movable member which moves in the axial direction of the cylindrical hole.
摘要翻译： 提供了一种在移动通信基站等中使用的高功率滤波装置，其中，温度稳定性和频率选择优异，插入损耗小，尺寸小，功耗低，成本低。 屏蔽盒块包括信号输入和输出部分，以及容纳连接在信号输入和输出部分之间的滤波器元件的多个封闭空间。 冷却板设置在容纳屏蔽壳体块的绝热容器中。 屏蔽盒在热接触状态下固定在冷却板上。 每个过滤元件几乎平行放置。 具有与过滤元件的面大致平行的轴线的圆筒状的孔贯通屏蔽壳体。 在沿筒状孔的轴向移动的可动部件的内端部设置有由导体构成的接地棒，该导体改变封闭空间的容积。
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公开(公告)号：US5481119A
公开(公告)日：1996-01-02
申请号：US926020
申请日：1992-08-07
CPC分类号： H01L39/2496
摘要： A superconducting element includes a superconducting thin film bridge extending along the surface of a substrate, and a control electrode member for injecting quasi particles into a portion of an intersection region of the superconducting thin film bridge. The intersection region extends across the superconducting thin film bridge in a direction which is perpendicular to the current flow direction of the superconducting thin film bridge. A remaining portion of the intersection region, which is not injected with quasi particles by the control electrode member, operates as a weak-coupling bridge to thereby control the current flow within the superconducting thin film bridge.
摘要翻译： 超导元件包括沿着衬底的表面延伸的超导薄膜电桥，以及用于将准微粒注入到超导薄膜桥的交叉区域的一部分中的控制电极构件。 交叉区域在垂直于超导薄膜桥的电流流动方向的方向上延伸穿过超导薄膜桥。 通过控制电极部件没有注入准粒子的交叉区域的剩余部分作为弱耦合桥作用，从而控制超导薄膜桥内的电流。
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