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10 条记录 (耗时 0.029 秒)

    Reshaped human anti-HM 1.24 antibody
    1.
    发明授权
    Reshaped human anti-HM 1.24 antibody 有权
    重构人抗HM 1.24抗体

    公开(公告)号：US06699974B2

    公开(公告)日：2004-03-02

    申请号：US09269921

    申请日：1999-04-01

    申请人： Koichiro Ono ,  Toshihiko Ohtomo ,  Masayuki Tsuchiya ,  Yasushi Yoshimura ,  Yasuo Koishihara ,  Masaaki Kosaka

    发明人： Koichiro Ono ,  Toshihiko Ohtomo ,  Masayuki Tsuchiya ,  Yasushi Yoshimura ,  Yasuo Koishihara ,  Masaaki Kosaka

    IPC分类号： C07K1680

    CPC分类号： C07K16/2896 ,  A61K38/00 ,  C07K16/3061 ,  C07K2317/24 ,  C07K2317/732 ,  C07K2317/734 ,  C07K2319/00

    摘要： A reshaped human anti-HM 1.24 antibody comprising: (A) an L chain comprising (1) the C region of a human L chain, and (2) the V region of an L chain comprising the FR of a human L chain and the CDR of the L chain of a mouse anti-HM 1.24 monoclonal antibody; and (B) an H chain comprising (1) the C region of a human H chain, and (2) the V region of an H chain comprising the FR of a human H chain and the CDR of the H chain of a mouse anti-HM 1.24 monoclonal antibody. Since most of this reshaped human antibody is derived from human antibody and the CDR has a low antigenicity, the reshaped human antibody of the present invention has a low antigenicity and, therefore, is expected to be-used for medical treatment.

    摘要翻译： 重构人抗HM 1.24抗体，其包含：（A）包含（1）人L链的C区的L链，和（2）包含人L链的FR的L链的V区和 小鼠抗HM 1.24单克隆抗体的L链的CDR; 和（B）包含（1）人H链的C区的H链，和（2）包含人H链的FR的H链的V区和小鼠抗体的H链的CDR -HM 1.24单克隆抗体。由于大部分重整人抗体衍生自人抗体，CDR具有低抗原性，本发明的重构人抗体具有低抗原性，因此预期用于医学 治疗。

    Electronic noise attenuation system
    4.
    发明授权
    Electronic noise attenuation system 失效
    电子噪声衰减系统

    公开(公告)号：US5018202A

    公开(公告)日：1991-05-21

    申请号：US313475

    申请日：1989-02-22

    申请人： Minoru Takahashi ,  Tanetoshi Miura ,  Hareo Hamada ,  Hideki Hyoudo ,  Ryusuke Gotoda ,  Yasushi Yoshimura ,  Takashi Kuribayashi ,  Akio Akasaka

    发明人： Minoru Takahashi ,  Tanetoshi Miura ,  Hareo Hamada ,  Hideki Hyoudo ,  Ryusuke Gotoda ,  Yasushi Yoshimura ,  Takashi Kuribayashi ,  Akio Akasaka

    IPC分类号： H04R3/00 ,  G10K11/178

    CPC分类号： G10K11/1784 ,  G10K2210/3045 ,  G10K2210/3049 ,  G10K2210/508

    摘要： An electronic noise attenuation system for attenuating a sound wave propagated from a source of noise by generating another sound wave 180.degree. out of phase and having the same sound pressure with the propagated sound wave from electro-mechanic transducer means disposed in a propagation passage of sound waves. In the electronic noise attenuation system, a drive signal for drive the electro-mechanic transducer means is generated in accordance with output signals respectively output from upstream-side and downstream-side mechano-electric transducer means respectively disposed in the propagation passage with the electro-mechanic transducer means therebetween. Namely, the drive signal is created by performing an operation on a difference signal between the output signal of the upstream mechano-electric transducer means and the drive signal according to a given transfer function. Also, the transfer function is determined in accordance with the difference signal and the output signal of the downstream mechano-electric transducer means.

    摘要翻译： 一种电子噪声衰减系统，用于衰减从噪声源传播的声波，通过产生与声波传播通道中设置的来自机电传感器装置的传播声波相同并且具有相同声压180°的另一声波 波浪。 在电子噪声衰减系统中，根据从分别设置在传播路径中的上游侧和下游侧机械电传感器装置输出的输出信号，产生用于驱动机电换能器装置的驱动信号， 机械传感器装置在其间。 即，通过根据给定的传递函数对上游机电换能器装置的输出信号和驱动信号之间的差分信号执行操作来创建驱动信号。 而且，传递函数根据差分信号和下游机电换能器装置的输出信号来确定。

    Method and apparatus for mounting slice base on wafer of semiconductor
    5.
    发明授权
    Method and apparatus for mounting slice base on wafer of semiconductor 失效
    用于安装半导体晶片上基片的方法和装置

    公开(公告)号：US5154873A

    公开(公告)日：1992-10-13

    申请号：US590806

    申请日：1990-10-01

    申请人： Tsutomu Sato ,  Yasushi Yoshimura

    发明人： Tsutomu Sato ,  Yasushi Yoshimura

    IPC分类号： H01L21/304 ,  B28D1/00 ,  B28D5/00 ,  H01L21/673 ,  H01L21/687

    CPC分类号： H01L21/67326 ,  B28D1/005 ,  B28D5/0082 ,  H01L21/6733

    摘要： It is known that it is advantageous in semiconductor wafer production to re-slice a semiconductor wafer having impurity diffusion layers on both sides which are processed or doped in advance of the re-slicing process. In the re-slicing process, a thin slice base is mounted on the periphery of a semiconductor wafer prior to the re-slicing process for protecting the periphery of the wafer from chipping off damage during the re-slicing process by an ID saw or the like. The present invention provides several examples of methods and apparatus for mounting a slice base prepared in advance on the periphery of a semiconductor wafer by utilizing the method and apparatus of the present invention. In addition, another method and apparatus for simultaneously molding and mounting a molded type slice base by using a thermosetting type resin on the periphery of the semiconductor, whereby the re-slicing process of a semiconductor wafer is extremely improved in production and labor cost.

    System and method for managing materials
    6.
    发明授权
    System and method for managing materials 有权
    管理材料的系统和方法

    公开(公告)号：US07389922B2

    公开(公告)日：2008-06-24

    申请号：US11260388

    申请日：2005-10-28

    申请人： Yasushi Yoshimura ,  Tetsuya Tsubokura ,  Gou Yoshimura ,  Shinichi Ebata

    发明人： Yasushi Yoshimura ,  Tetsuya Tsubokura ,  Gou Yoshimura ,  Shinichi Ebata

    IPC分类号： G06F19/00

    CPC分类号： G06Q10/087

    摘要： The system for managing materials comprises: a material yard which has a material carry-in port and a material carry-out port, the material yard being divided into a plurality of yard sections which store materials; a plurality of first tags which record data of the materials to be read in a non-contact manner, the first tags being attached to the materials managed in the material yard; a second tag which stores and sends data of an identification ID issued for each of lots into which the materials are classified to check a current position of each of the lots via a position sensing signal transmitted to the material yard, the second tag being attached to each of the lots; a reading device which reads the data recorded in the first tags, the reading device being provided in at least one of the material carry-in port and the material carry-out port within the material yard; a plurality of receiving devices which receive a data signal of the identification ID transmitted from the second tag, the receiving devices being respectively provided in the yard sections; a plurality of transmitting devices which transmit the position sensing signal received from the second tag to check the current position of the second tag, the transmitting devices being provided on each of a plurality of predetermined positions in the material yard; and a database which records the data of the materials and management data for managing the materials so as to manage the materials.

    摘要翻译： 用于管理材料的系统包括：具有材料搬入口和材料进出口的物料场，物料堆分为存储物料的多个堆场部分; 多个第一标签，以非接触的方式记录要读取的材料的数据，第一标签附着在材料堆场中管理的材料上; 第二标签，其存储并发送通过分发材料的每个批次发行的识别ID的数据，以经由发送到物料场的位置感测信号来检查每个批次的当前位置，第二标签被附接到 每一批; 读取装置，其读取记录在第一标签中的数据，读取装置设置在材料堆放场中的材料进入口和材料进出口中的至少一个中; 多个接收装置，其接收从第二标签发送的识别ID的数据信号，接收装置分别设置在院子部分中; 多个发送装置，其发送从所述第二标签接收的所述位置检测信号，以检查所述第二标签的当前位置，所述发送装置设置在所述材料堆场中的多个预定位置的每一个上; 以及数据库，其记录用于管理材料的材料的数据和管理数据，以管理材料。

    System and method for managing materials
    7.
    发明申请
    System and method for managing materials 有权
    管理材料的系统和方法

    公开(公告)号：US20060136698A1

    公开(公告)日：2006-06-22

    申请号：US11260388

    申请日：2005-10-28

    申请人： Yasushi Yoshimura ,  Tetsuya Tsubokura ,  Gou Yoshimura ,  Shinichi Ebata

    发明人： Yasushi Yoshimura ,  Tetsuya Tsubokura ,  Gou Yoshimura ,  Shinichi Ebata

    IPC分类号： G06F15/00

    CPC分类号： G06Q10/087

    摘要： The system for managing materials comprises: a material yard which has a material carry-in port and a material carry-out port, the material yard being divided into a plurality of yard sections which store materials; a plurality of first tags which record data of the materials to be read in a non-contact manner, the first tags being attached to the materials managed in the material yard; a second tag which stores and sends data of an identification ID issued for each of lots into which the materials are classified to check a current position of each of the lots via a position sensing signal transmitted to the material yard, the second tag being attached to each of the lots; a reading device which reads the data recorded in the first tags, the reading device being provided in at least one of the material carry-in port and the material carry-out port within the material yard; a plurality of receiving devices which receive a data signal of the identification ID transmitted from the second tag, the receiving devices being respectively provided in the yard sections; a plurality of transmitting devices which transmit the position sensing signal received from the second tag to check the current position of the second tag, the transmitting devices being provided on each of a plurality of predetermined positions in the material yard; and a database which records the data of the materials and management data for managing the materials so as to manage the materials.

    摘要翻译： 用于管理材料的系统包括：具有材料搬入口和材料进出口的物料场，物料堆分为存储物料的多个堆场部分; 多个第一标签，以非接触的方式记录要读取的材料的数据，第一标签附着在材料堆场中管理的材料上; 第二标签，其存储并发送通过分发材料的每个批次发行的识别ID的数据，以经由发送到物料场的位置感测信号来检查每个批次的当前位置，第二标签被附接到 每一批; 读取装置，其读取记录在第一标签中的数据，读取装置设置在材料堆放场中的材料进入口和材料进出口中的至少一个中; 多个接收装置，其接收从第二标签发送的识别ID的数据信号，接收装置分别设置在院子部分中; 多个发送装置，其发送从所述第二标签接收的所述位置检测信号，以检查所述第二标签的当前位置，所述发送装置设置在所述材料堆场中的多个预定位置的每一个上; 以及数据库，其记录用于管理材料的材料的数据和管理数据，以管理材料。

    Method of preparing diffused silicon device substrate
    8.
    发明授权
    Method of preparing diffused silicon device substrate 失效
    制备扩散硅器件衬底的方法

    公开(公告)号：US5308789A

    公开(公告)日：1994-05-03

    申请号：US124790

    申请日：1993-09-22

    申请人： Yasushi Yoshimura ,  Takeshi Akatsuka ,  Junichi Okada

    发明人： Yasushi Yoshimura ,  Takeshi Akatsuka ,  Junichi Okada

    IPC分类号： H01L21/22 ,  H01L21/225 ,  H01L21/322 ,  H01L29/78 ,  H01L21/324

    CPC分类号： H01L21/2252 ,  H01L21/3225 ,  Y10S148/126 ,  Y10S438/909 ,  Y10S438/92 ,  Y10S438/934

    摘要： In a method of preparing a diffused silicon device substrate for use in the fabrication of a MOS power device, a drive-in diffusion step is followed by a thermal donor formation heat treatment which is achieved by heating the silicon device substrate at a temperature from 400.degree. to 500.degree. C. for 1 to 20 hours and in a gas atmosphere containing oxygen gas, and subsequently a thermal donor formation retarding heat treatment is performed by heating the silicon device substrate at a temperature of from 600.degree. to 700.degree. C. for 8 to 24 hours in a gas atmosphere containing oxygen gas.

    摘要翻译： 在制备用于制造MOS功率器件的扩散硅器件衬底的方法中，驱动扩散步骤之后是热施主形成热处理，其通过在400℃的温度下加热硅器件衬底而实现 在500℃〜100℃下，在含有氧气的气氛中，通过在600℃〜700℃的温度下加热硅器件基板，进行热供体形成延迟热处理， 在含有氧气的气体气氛中8至24小时。