Integrated circuit device and manufacturing method thereof
    1.
    发明申请
    Integrated circuit device and manufacturing method thereof 有权
    集成电路装置及其制造方法

    公开(公告)号:US20060273319A1

    公开(公告)日:2006-12-07

    申请号:US11442225

    申请日:2006-05-30

    IPC分类号: H01L29/786 H01L21/46

    摘要: It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.

    摘要翻译: 本发明的目的在于,制造基板薄型化的集成电路装置时,通过减薄或提高成品率来提高影响生产率的因素,例如电路特性缺陷引起的变化。 在衬底的一个表面上形成阻挡层,并且在阻挡层上形成元件,然后从其另一个表面减薄衬底。 将基板研磨或抛光的方法或其中通过化学反应蚀刻基板的方法用作薄膜或去除基板的方法。

    Method for manufacturing semiconductor device
    2.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07820495B2

    公开(公告)日:2010-10-26

    申请号:US11448053

    申请日:2006-06-07

    IPC分类号: H01L21/00 H01L21/30

    摘要: An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.

    摘要翻译: 本发明的目的是提供一种用于制造半导体器件的方法,其中,即使在形成半导体元件之后减薄或去除衬底的情况下,也可以抑制由于杂质元素,水分等的进入而对半导体元件的影响 在基板上。 特征在于,在基板的至少一面上形成作为保护膜的绝缘膜,在基板上进行表面处理,在绝缘膜上形成薄膜晶体管等半导体元件,并使基板 。 作为表面处理,在基板上进行杂质元素或等离子体处理的添加。 作为使基板变薄的方法,可以在基板的另一侧进行研磨处理,研磨处理等来部分除去基板。

    Manufacturing method of integrated circuit device including thin film transistor
    4.
    发明授权
    Manufacturing method of integrated circuit device including thin film transistor 有权
    包括薄膜晶体管的集成电路器件的制造方法

    公开(公告)号:US07972910B2

    公开(公告)日:2011-07-05

    申请号:US11442225

    申请日:2006-05-30

    IPC分类号: H01L21/46

    摘要: It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.

    摘要翻译: 本发明的目的在于,制造基板薄型化的集成电路装置时,通过减薄或提高成品率来提高影响生产率的因素,例如电路特性缺陷引起的变化。 在衬底的一个表面上形成阻挡层,并且在阻挡层上形成元件,然后从其另一个表面减薄衬底。 将基板研磨或抛光的方法或其中通过化学反应蚀刻基板的方法用作薄膜或去除基板的方法。

    Method for manufacturing semiconductor device
    6.
    发明申请
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US20070004102A1

    公开(公告)日:2007-01-04

    申请号:US11448053

    申请日:2006-06-07

    IPC分类号: H01L21/84 H01L21/31

    摘要: An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.

    摘要翻译: 本发明的目的是提供一种用于制造半导体器件的方法,其中,即使在形成半导体元件之后减薄或去除衬底的情况下,也可以抑制由于杂质元素,水分等的进入而对半导体元件的影响 在基板上。 特征在于,在基板的至少一面上形成作为保护膜的绝缘膜,在基板上进行表面处理,在绝缘膜上形成薄膜晶体管等半导体元件,并使基板 。 作为表面处理,在基板上进行杂质元素或等离子体处理的添加。 作为使基板变薄的方法,可以在基板的另一侧进行研磨处理,研磨处理等来部分除去基板。

    Method of manufacturing integrated circuit device
    8.
    发明授权
    Method of manufacturing integrated circuit device 有权
    集成电路器件制造方法

    公开(公告)号:US08492246B2

    公开(公告)日:2013-07-23

    申请号:US13162611

    申请日:2011-06-17

    IPC分类号: H01L21/82

    摘要: It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.

    摘要翻译: 本发明的目的在于,制造基板薄型化的集成电路装置时,通过减薄或提高成品率来提高影响生产率的因素,例如电路特性缺陷引起的变化。 在衬底的一个表面上形成阻挡层,并且在阻挡层上形成元件,然后从其另一个表面减薄衬底。 将基板研磨或抛光的方法或其中通过化学反应蚀刻基板的方法用作薄膜或去除基板的方法。

    Method for manufacturing semiconductor device
    10.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US08361845B2

    公开(公告)日:2013-01-29

    申请号:US12908239

    申请日:2010-10-20

    IPC分类号: H01L21/00 H01L21/322

    摘要: An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.

    摘要翻译: 本发明的目的是提供一种用于制造半导体器件的方法,其中,即使在形成半导体元件之后减薄或去除衬底的情况下,也可以抑制由于杂质元素,水分等的进入而对半导体元件的影响 在基板上。 特征在于,在基板的至少一面上形成作为保护膜的绝缘膜,在基板上进行表面处理,在绝缘膜上形成薄膜晶体管等半导体元件,并使基板 。 作为表面处理,在基板上进行杂质元素或等离子体处理的添加。 作为使基板变薄的方法,可以在基板的另一侧进行研磨处理,研磨处理等来部分除去基板。