公开(公告)号：US6113733A

公开(公告)日：2000-09-05

申请号：US965892

申请日：1997-11-07

申请人： Koji Eriguchi ,  Takayuki Yamada ,  Masanori Okuyama

发明人： Koji Eriguchi ,  Takayuki Yamada ,  Masanori Okuyama

IPC分类号： H01L21/3065 ,  H05H1/00 ,  G01N21/41

CPC分类号： H01L21/3065

摘要： A top surface of a wafer is provided with an n-type source region, an n-type drain region, and an n-type semiconductor region. Dry etching using a plasma is performed with respect to an interlayer insulating film deposited on the wafer to form openings reaching the respective regions, followed by light etching for removing a damaged layer. In this case, exciting light is supplied intermittently to the n-type semiconductor region. The progression of the removal of the damaged layer and the stage of development of a newly damaged layer are sensed by monitoring the change rate of the intensity of reflected probe light in the presence and absence of the exciting light, resulting in the formation of a semiconductor device having low and equal contact resistance. In-line control using optical evaluation enables the implementation of semiconductor devices with excellent and consistent properties.

公开(公告)号：US06849470B1

公开(公告)日：2005-02-01

申请号：US09610640

申请日：2000-07-05

申请人： Koji Eriguchi ,  Takayuki Yamada ,  Masanori Okuyama

发明人： Koji Eriguchi ,  Takayuki Yamada ,  Masanori Okuyama

IPC分类号： H01L21/3065 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/3065

摘要： A top surface of a wafer is provided with an n-type source region, an n-type drain region, and an n-type semiconductor region. Dry etching using a plasma is performed with respect to an interlayer insulating film deposited on the wafer to form openings reaching the respective regions, followed by light etching for removing a damaged layer. In this case, exciting light is supplied intermittently to the n-type semiconductor region. The progression of the removal of the damaged layer and the stage of development of a newly damaged layer are sensed by monitoring the change rate of the intensity of reflected probe light in the presence and absence of the exciting light, resulting in the formation of a semiconductor device having low and equal contact resistance. In-line control using optical evaluation enables the implementation of semiconductor devices with excellent and consistent properties.

摘要翻译： 晶片的顶表面设置有n型源极区，n型漏极区和n型半导体区。 对沉积在晶片上的层间绝缘膜进行使用等离子体的干蚀刻，以形成到达各个区域的开口，然后进行光蚀刻以去除损伤层。 在这种情况下，向n型半导体区域间歇地供给激发光。 通过在存在和不存在激发光的情况下监测反射的探测光的强度的变化率来检测损坏层的去除进展和新损坏层的显影阶段，导致形成半导体 器件具有低和相等的接触电阻。 使用光学评估的在线控制使得能够实现具有优异和一致特性的半导体器件。

公开(公告)号：US06727108B2

公开(公告)日：2004-04-27

申请号：US10461403

申请日：2003-06-16

申请人： Koji Eriguchi ,  Takayuki Yamada ,  Masanori Okuyama

发明人： Koji Eriguchi ,  Takayuki Yamada ,  Masanori Okuyama

IPC分类号： H01L2166

CPC分类号： H01L21/3065

摘要： A top surface of a wafer is provided with an n-type source region, an n-type drain region, and an n-type semiconductor region. Dry etching using a plasma is performed with respect to an interlayer insulating film deposited on the wafer to form openings reaching the respective regions, followed by light etching for removing a damaged layer. In this case, exciting light is supplied intermittently to the n-type semiconductor region. The progression of the removal of the damaged layer and the stage of development of a newly damaged layer are sensed by monitoring the change rate of the intensity of reflected probe light in the presence and absence of the exciting light, resulting in the formation of a semiconductor device having low and equal contact resistance. In-line control using optical evaluation enables the implementation of semiconductor devices with excellent and consistent properties.

摘要翻译： 晶片的顶表面设置有n型源极区，n型漏极区和n型半导体区。 对沉积在晶片上的层间绝缘膜进行使用等离子体的干蚀刻，以形成到达各个区域的开口，然后进行光蚀刻以去除损伤层。 在这种情况下，向n型半导体区域间歇地供给激发光。 通过在存在和不存在激发光的情况下监测反射的探测光的强度的变化率来检测损坏层的去除进展和新损坏层的显影阶段，导致形成半导体 器件具有低和相等的接触电阻。 使用光学评估的在线控制使得能够实现具有优异和一致特性的半导体器件。

公开(公告)号：US06580091B1

公开(公告)日：2003-06-17

申请号：US09610432

申请日：2000-07-05

申请人： Koji Eriguchi ,  Takayuki Yamada ,  Masanori Okuyama

发明人： Koji Eriguchi ,  Takayuki Yamada ,  Masanori Okuyama

IPC分类号： H01L2358

CPC分类号： H01L21/3065

摘要： A top surface of a wafer is provided with an n-type source region, an n-type drain region, and an n-type semiconductor region. Dry etching using a plasma is performed with respect to an interlayer insulating film deposited on the wafer to form openings reaching the respective regions, followed by light etching for removing a damaged layer. In this case, exciting light is supplied intermittently to the n-type semiconductor region. The progression of the removal of the damaged layer and the stage of development of a newly damaged layer are sensed by monitoring the change rate of the intensity of reflected probe light in the presence and absence of the exciting light, resulting in the formation of a semiconductor device having low and equal contact resistance. In-line control using optical evaluation enables the implementation of semiconductor devices with excellent and consistent properties.

摘要翻译： 晶片的顶表面设置有n型源极区，n型漏极区和n型半导体区。 对沉积在晶片上的层间绝缘膜进行使用等离子体的干蚀刻，以形成到达各个区域的开口，然后进行光蚀刻以去除损伤层。 在这种情况下，向n型半导体区域间歇地供给激发光。 通过在存在和不存在激发光的情况下监测反射的探测光的强度的变化率来检测损坏层的去除进展和新损坏层的显影阶段，导致形成半导体 器件具有低和相等的接触电阻。 使用光学评估的在线控制使得能够实现具有优异和一致特性的半导体器件。

公开(公告)号：US20070039667A1

公开(公告)日：2007-02-22

申请号：US11516034

申请日：2006-09-05

申请人： Yoshiharu Kosaka ,  Masanori Okuyama

发明人： Yoshiharu Kosaka ,  Masanori Okuyama

IPC分类号： C22C9/04

CPC分类号： C22C9/04

摘要： The invention provides a lead-free brass material exhibiting excellent forgeability and dezincification resistance. The brass material includes 61.0 to 63.0 wt % of Cu, 0.5 to 2.5 wt % of Bi, 1.5 to 3.0 wt % of Sn, 0.02 to 0.10 wt % of Sb, and 0.04 to 0.15 wt % of P, with the balance being substantially Zn. The brass material is a lead-free free-cutting alloy which can be suitably applied to forging and exhibits excellent mechanical properties and dezincification resistance without substantially subjecting the brass material to a heat treatment after forging.

摘要翻译： 本发明提供一种显示出优异的可锻性和耐脱锌性的无铅黄铜材料。 黄铜材料包括61.0至63.0重量％的Cu，0.5至2.5重量％的Bi，1.5至3.0重量％的Sn，0.02至0.10重量％的Sb和0.04至0.15重量％的P，余量基本上 锌。 黄铜材料是无铅自由切削合金，其可以适用于锻造，并且在锻造后基本上不对黄铜材料进行热处理，而且具有优异的机械性能和耐脱锌性。

公开(公告)号：US06674081B2

公开(公告)日：2004-01-06

申请号：US10251953

申请日：2002-09-23

申请人： Kazuhiko Hashimoto ,  Tomonori Mukaigawa ,  Ryuichi Kubo ,  Hiroyuki Kishihara ,  Minoru Noda ,  Masanori Okuyama

发明人： Kazuhiko Hashimoto ,  Tomonori Mukaigawa ,  Ryuichi Kubo ,  Hiroyuki Kishihara ,  Minoru Noda ,  Masanori Okuyama

IPC分类号： G01J500

CPC分类号： H01L37/02 ,  G01J5/34 ,  H01L27/16

摘要： An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

摘要翻译： 由铁电体膜形成的红外线检测电容器，其电容器部分由第一和第二互连线支撑，以保持在位于沟槽两侧的Si衬底上。 下电极与第一互连线耦合，而上电极与第二互连线耦合。 电容器部分是平面图中的矩形，没有在对角线方向上彼此相对的小三角形部分。

公开(公告)号：US06402304B1

公开(公告)日：2002-06-11

申请号：US09372990

申请日：1999-08-12

申请人： Hong Qiu ,  Koji Sumi ,  Masato Shimada ,  Tsutomu Nishiwaki ,  Masanori Okuyama ,  Zhi Quiang Wei

发明人： Hong Qiu ,  Koji Sumi ,  Masato Shimada ,  Tsutomu Nishiwaki ,  Masanori Okuyama ,  Zhi Quiang Wei

IPC分类号： B41J2045

CPC分类号： B41J2/1646 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1645 ,  B41J2002/14387 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/317

摘要： A piezoelectric actuator, made of a substrate and a piezoelectric film layer resistant to erosion is provided. The area of the piezoelectric actuator can be enlarged, and has a flat top surface. The present invention further provides an ink jet printing head, a printer, a method for manufacturing a piezoelectric actuator, and a method for manufacturing an ink jet printing head. The piezoelectric actuator includes a piezoelectric film disposed between a lower electrode and an upper electrode. Columnar crystal grains of piezoelectric ceramic which compose the piezoelectric actuator are random-oriented in a film thickness direction, and have a mean diameter in the range of 100 nm to 15,000 nm. The method for manufacturing the actuator includes the step of forming precursor films, which are composed of metal and oxygen, over a lower electrode, providing a hydrothermal treatment by dipping the precursor films in an alkaline solution, which as 2 M[mol/l] or less, more preferably 0.1 M[mol/l] or less, concentration of a given alkaline solute, and promoting the crystallization under certain conditions.

摘要翻译： 提供了一种由基片制成的压电致动器和耐腐蚀的压电薄膜层。 压电致动器的面积可以扩大，并且具有平坦的顶表面。 本发明还提供一种喷墨打印头，打印机，压电致动器的制造方法以及喷墨打印头的制造方法。 压电致动器包括设置在下电极和上电极之间的压电膜。 构成压电致动器的压电陶瓷的柱状晶粒在膜厚度方向上是随机取向的，并且具有在100nm至15,000nm范围内的平均直径。 制造致动器的方法包括在下电极上形成由金属和氧构成的前体膜的步骤，通过将前体膜浸入碱溶液中进行水热处理，碱溶液为2M [mol / l] 或更低，更优选0.1M [mol / l]或更低，给定碱性溶质的浓度，并且在某些条件下促进结晶。

公开(公告)号：US06262418B1

公开(公告)日：2001-07-17

申请号：US09177148

申请日：1998-10-22

申请人： Kazuhiko Hashimoto ,  Masanori Okuyama ,  Ryuichi Kubo ,  Tomonori Mukaigawa

发明人： Kazuhiko Hashimoto ,  Masanori Okuyama ,  Ryuichi Kubo ,  Tomonori Mukaigawa

IPC分类号： G01J510

CPC分类号： G01J5/34

摘要： A thermal type infrared sensing device has; a plurality of light-receiving electrodes for outputting a change of surface charge associated with a polarization that occurs in a dielectric when subjected to infrared radiation; and a plurality of compensation electrodes, corresponding one for one to plurality of light-receiving electrodes, for compensating the outputs of corresponding light-receiving electrodes, and wherein plurality of compensation electrodes are formed on a different substrate from a substrate on which plurality of light-receiving electrodes are formed.

摘要翻译： 一种热式红外传感器具有： 多个光接收电极，用于输出当经受红外辐射时在电介质中发生的与偏振有关的表面电荷的变化; 以及多个补偿电极，对应一个用于一个到多个光接收电极，用于补偿相应的光接收电极的输出，并且其中多个补偿电极形成在不同的衬底上，所述衬底上具有多个光 形成接收电极。

公开(公告)号：US06419849B1

公开(公告)日：2002-07-16

申请号：US09534573

申请日：2000-03-27

申请人： Hong Qiu ,  Koji Sumi ,  Tsutomu Nishiwaki ,  Masanori Okuyama ,  Zhiqiang Wei

发明人： Hong Qiu ,  Koji Sumi ,  Tsutomu Nishiwaki ,  Masanori Okuyama ,  Zhiqiang Wei

IPC分类号： H01L4100

CPC分类号： B41J2/1628 ,  B41J2/161 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  H01L41/1876 ,  H01L41/317 ,  H01L41/318

摘要： When a piezoelectric material is manufactured by hydrothermal method, the proper amount of lead contained in the piezoelectric film can be ensured and decreases in piezoelectric characteristics can be prevented. A method for manufacturing a piezoelectric material expressed by the formula ABO3, containing an element “a” as the element expressed by A above, and having a perovskite crystal structure, comprises a first step of producing an oxide containing an element “a′”, and a second step of producing a piezoelectric material by subjecting the oxide produced in the first step to a hydrothermal processing using an aqueous solution containing the element “a”, wherein the amount of the element “a” contained in the piezoelectric material produced in the second step is increased over the amount of the element “a” contained in the oxide produced in the first step.

摘要翻译： 当通过水热法制造压电材料时，可以确保压电膜中所含的适量的铅，并且可以防止压电特性的降低。 制备由式ABO3表示的压电材料的方法，其包含元素“a”作为上述A表示的元素，并且具有钙钛矿晶体结构，包括制备含有元素“a”的氧化物的第一步骤， 以及第二步骤，通过使用含有元素“a”的水溶液对在第一步骤中产生的氧化物进行水热处理来制造压电材料，其中包含在所述压电材料中产生的压电材料中的元素“a”的量 第一步骤中生成的氧化物中含有的元素“a”的量增加。

公开(公告)号：US08303737B2

公开(公告)日：2012-11-06

申请号：US11516034

申请日：2006-09-05

申请人： Yoshiharu Kosaka ,  Masanori Okuyama

发明人： Yoshiharu Kosaka ,  Masanori Okuyama

IPC分类号： C22C9/04

CPC分类号： C22C9/04

摘要： A lead-free brass material exhibiting excellent forgeability and dezincification resistance is provided. The brass material includes 61.0 to 63.0 wt % of Cu, 0.5 to 2.5 wt % of Bi, 1.5 to 3.0 wt % of Sn, 0.02 to 0.10 wt % of Sb, and 0.04 to 0.15 wt % of P, with the balance being substantially Zn. The brass material is a lead-free, free-cutting alloy which can be suitably applied to forging and which exhibits excellent mechanical properties and dezincification resistance without substantially subjecting the brass material to a heat treatment after forging.

摘要翻译： 提供了具有优异的可锻性和脱锌性的无铅黄铜材料。 黄铜材料包括61.0至63.0重量％的Cu，0.5至2.5重量％的Bi，1.5至3.0重量％的Sn，0.02至0.10重量％的Sb和0.04至0.15重量％的P，余量基本上 锌。 黄铜材料是无铅，自由切削的合金，其可以适用于锻造，并且在锻造后基本上不对黄铜材料进行热处理，其表现出优异的机械性能和耐脱锌性。